Preliminary Datasheet RJK6006DPP-E0 600V - 5A - MOS FET High Speed Power Switching R07DS0610EJ0100 Rev.1.00 Mar 16, 2012 Features Low on-state resistance RDS(on) = 1.4 typ. (at ID = 2.5 A, VGS = 10 V, Ta = 25C) High speed switching Outline RENESAS Package code: PRSS0003AG-A (Package name: TO-220FP) D 1. Gate 2. Drain 3. Source G 1 S 2 3 Absolute Maximum Ratings (Ta = 25C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Body-drain diode reverse drain peak current Avalanche current Avalanche energy Channel dissipation Channel to case thermal Impedance Channel temperature Storage temperature Notes: 1. 2. 3. 4. Symbol VDSS VGSS Note4 ID Note1 ID (pulse) IDR Note1 IDR (pulse) Note3 IAP Note3 EAR Pch Note 2 ch-c Tch Tstg Value 600 30 5 15 5 15 5 1.36 29 4.31 150 –55 to +150 Unit V V A A A A A mJ W C/W C C PW 10 s, duty cycle 1% Value at Tc = 25C STch = 25C, Tch 150C Limited by maximum safe operation area R07DS0610EJ0100 Rev.1.00 Mar 16, 2012 Page 1 of 6 RJK6006DPP-E0 Preliminary Electrical Characteristics (Ta = 25C) Item Drain to source breakdown voltage Zero gate voltage drain current Gate to source leak current Gate to source cutoff voltage Static drain to source on state resistance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate to source charge Gate to drain charge Body-drain diode forward voltage Body-drain diode reverse recovery time Note: Symbol V(BR) DSS IDSS IGSS VGS (off) RDS (on) Ciss Coss Crss td (on) tr td (off) tf Qg Qgs Qgd VDF trr Min 600 — — 3.0 — — — — — — — — — — — — — Typ — — — — 1.4 600 70 10 25 17 60 10 19 3.4 9.2 0.9 250 Max — 1 0.1 4.5 1.6 — — — — — — — — — — 1.5 — Unit V A A V pF pF pF ns ns ns ns nC nC nC V ns Test Conditions ID = 10 mA, VGS = 0 VDS = 600 V, VGS = 0 VGS = 30 V, VDS = 0 VDS = 10 V, ID = 1 mA ID = 2.5 A, VGS = 10 V Note 5 VDS = 25 V VGS = 0 f = 1 MHz ID = 2.5 A VGS = 10 V RL = 80 Rg = 10 VDD = 480 V VGS = 10 V ID = 5 A IF = 5 A, VGS = 0 Note 5 IF = 5 A, VGS = 0 diF/dt = 100 A/s 5. Pulse test R07DS0610EJ0100 Rev.1.00 Mar 16, 2012 Page 2 of 6 RJK6006DPP-E0 Preliminary Main Characteristics Typical Output Characteristics Maximum Safe Operation Area 10 10 μs PW = 10 0 1 μs Drain Current ID (A) 10 Operation in this area is limited by RDS(on) 0.1 0.01 Drain Current ID (A) 100 Tc = 25°C 1 shot 0.001 0.1 1 10 5.4 V 6 5.2 V 4 5V VGS = 4.8 V 2 0 4 8 12 16 20 Typical Transfer Characteristics Static Drain to Source on State Resistance vs. Drain Current (Typical) Drain to Source on State Resistance RDS(on) (Ω) Tc = −25°C 8 25°C 6 75°C 4 2 0 2 4 6 8 10 VGS = 10 V Ta = 25°C Pulse Test 1 0.1 10 1 10 Gate to Source Voltage VGS (V) Drain Current ID (A) Static Drain to Source on State Resistance vs. Temperature (Typical) Body-Drain Diode Reverse Recovery Time (Typical) 100 1000 5 VGS = 10 V Pulse Test 4 ID = 5 A 3 1A 2 2.5 A 1 0 -25 Reverse Recovery Time trr (ns) Drain Current ID (A) 6V 5.6 V Drain to Source Voltage VDS (V) VDS = 10 V Pulse Test Static Drain to Source on State Resistance RDS(on) (Ω) 7V 10 V 5.8 V Drain to Source Voltage VDS (V) 10 0 8 0 1000 100 Ta = 25°C Pulse Test 100 di / dt = 100 A / μs VGS = 0, Ta = 25°C 10 0 25 50 75 100 125 150 Case Temperature Tc (°C) R07DS0610EJ0100 Rev.1.00 Mar 16, 2012 1 10 100 Reverse Drain Current IDR (A) Page 3 of 6 RJK6006DPP-E0 Preliminary Typical Capacitance vs. Drain to Source Voltage (Typical) Ciss 100 Coss 10 Crss 1 0 100 200 300 Reverse Drain Current IDR (A) VGS 600 VDD = 480 V 300 V 100 V VDS 400 200 8 0 16 0 24 32 Gate to Source Cutoff Voltage vs. Case Temperature (Typical) 4 0 0.4 0.8 1.2 1.6 2.0 Source to Drain Voltage VSD (V) R07DS0610EJ0100 Rev.1.00 Mar 16, 2012 12 4 VDD = 480 V 300 V 100 V Reverse Drain Current vs. Source to Drain Voltage (Typical) VGS = 0 Ta = 25 °C Pulse Test 16 8 Gate Charge Qg (nC) 8 0 ID = 5 A Ta = 25 °C Drain to Source Voltage VDS (V) 16 12 800 5 Gate to Source Voltage VGS (V) 1000 Drain to Source Voltage VDS (V) VGS = 0 f = 1 MHz Ta = 25°C Gate to Source Cutoff Voltage VGS(off) (V) Capacitance C (pF) 10000 Dynamic Input Characteristics (Typical) 40 VDS = 10 V 4 3 ID = 10 mA 1 mA 2 0.1 mA 1 0 -25 0 25 50 75 Case Temperature 100 125 150 Tc (°C) Page 4 of 6 RJK6006DPP-E0 Preliminary Normalized Transient Thermal Impedance γs (t) Normalized Transient Thermal Impedance vs. Pulse Width 10 Tc = 25°C 1 D=1 0.5 0.2 0.1 0.1 0.05 θ ch – c(t) = γ s (t) • θ ch – c θ ch – c = 4.31°C/W, Tc = 25°C 0.02 0.01 ulse tp 0.01 1sho PDM D= PW T PW T 0.001 10 μ 100 μ 1m 10 m 100 m 1 10 100 Pulse Width PW (s) Switching Time Test Circuit Waveform Vout Monitor Vin Monitor 90% D.U.T. RL 10 Ω Vin 10 V VDD = 200 V Vin Vout 10% 10% 10% 90% td(on) R07DS0610EJ0100 Rev.1.00 Mar 16, 2012 tr 90% td(off) tf Page 5 of 6 RJK6006DPP-E0 Preliminary Package Dimensions Package Name TO-220FP JEITA Package Code RENESAS Code PRSS0003AG-A Previous Code MASS[Typ.] 1.9g 10.16 ± 0.20 2.54 ± 0.20 6.68 ± 0.20 3.3 ± 0.2 1.28 ± 0.30 3.18 ± 0.20 15.87 ± 0.20 3.18 ± 0.10 12.98 ± 0.30 Unit: mm Max 1.47 2.76 ± 0.20 0.80 ± 0.20 0.50 4.7 ± 0.2 5.08 ± 0.20 Ordering Information Orderable Part Number RJK6006DPP-E0#T2 R07DS0610EJ0100 Rev.1.00 Mar 16, 2012 Quantity 1000 pcs Shipping Container Box (Tube) Page 6 of 6 Notice 1. All information included in this document is current as of the date this document is issued. Such information, however, is subject to change without any prior notice. Before purchasing or using any Renesas Electronics products listed herein, please confirm the latest product information with a Renesas Electronics sales office. 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