RENESAS RJK6006DPP-E0

Preliminary Datasheet
RJK6006DPP-E0
600V - 5A - MOS FET
High Speed Power Switching
R07DS0610EJ0100
Rev.1.00
Mar 16, 2012
Features
 Low on-state resistance
RDS(on) = 1.4  typ. (at ID = 2.5 A, VGS = 10 V, Ta = 25C)
 High speed switching
Outline
RENESAS Package code: PRSS0003AG-A
(Package name: TO-220FP)
D
1. Gate
2. Drain
3. Source
G
1
S
2 3
Absolute Maximum Ratings
(Ta = 25C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Body-drain diode reverse drain peak current
Avalanche current
Avalanche energy
Channel dissipation
Channel to case thermal Impedance
Channel temperature
Storage temperature
Notes: 1.
2.
3.
4.
Symbol
VDSS
VGSS
Note4
ID
Note1
ID (pulse)
IDR
Note1
IDR (pulse)
Note3
IAP
Note3
EAR
Pch Note 2
ch-c
Tch
Tstg
Value
600
30
5
15
5
15
5
1.36
29
4.31
150
–55 to +150
Unit
V
V
A
A
A
A
A
mJ
W
C/W
C
C
PW 10 s, duty cycle  1%
Value at Tc = 25C
STch = 25C, Tch  150C
Limited by maximum safe operation area
R07DS0610EJ0100 Rev.1.00
Mar 16, 2012
Page 1 of 6
RJK6006DPP-E0
Preliminary
Electrical Characteristics
(Ta = 25C)
Item
Drain to source breakdown voltage
Zero gate voltage drain current
Gate to source leak current
Gate to source cutoff voltage
Static drain to source on state resistance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate to source charge
Gate to drain charge
Body-drain diode forward voltage
Body-drain diode reverse recovery time
Note:
Symbol
V(BR) DSS
IDSS
IGSS
VGS (off)
RDS (on)
Ciss
Coss
Crss
td (on)
tr
td (off)
tf
Qg
Qgs
Qgd
VDF
trr
Min
600
—
—
3.0
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ
—
—
—
—
1.4
600
70
10
25
17
60
10
19
3.4
9.2
0.9
250
Max
—
1
0.1
4.5
1.6
—
—
—
—
—
—
—
—
—
—
1.5
—
Unit
V
A
A
V

pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
ns
Test Conditions
ID = 10 mA, VGS = 0
VDS = 600 V, VGS = 0
VGS = 30 V, VDS = 0
VDS = 10 V, ID = 1 mA
ID = 2.5 A, VGS = 10 V Note 5
VDS = 25 V
VGS = 0
f = 1 MHz
ID = 2.5 A
VGS = 10 V
RL = 80 
Rg = 10 
VDD = 480 V
VGS = 10 V
ID = 5 A
IF = 5 A, VGS = 0 Note 5
IF = 5 A, VGS = 0
diF/dt = 100 A/s
5. Pulse test
R07DS0610EJ0100 Rev.1.00
Mar 16, 2012
Page 2 of 6
RJK6006DPP-E0
Preliminary
Main Characteristics
Typical Output Characteristics
Maximum Safe Operation Area
10
10
μs
PW
=
10
0
1
μs
Drain Current ID (A)
10
Operation in this
area is limited by
RDS(on)
0.1
0.01
Drain Current ID (A)
100
Tc = 25°C
1 shot
0.001
0.1
1
10
5.4 V
6
5.2 V
4
5V
VGS = 4.8 V
2
0
4
8
12
16
20
Typical Transfer Characteristics
Static Drain to Source on State Resistance
vs. Drain Current (Typical)
Drain to Source on State Resistance
RDS(on) (Ω)
Tc = −25°C
8
25°C
6
75°C
4
2
0
2
4
6
8
10
VGS = 10 V
Ta = 25°C
Pulse Test
1
0.1
10
1
10
Gate to Source Voltage VGS (V)
Drain Current ID (A)
Static Drain to Source on State Resistance
vs. Temperature (Typical)
Body-Drain Diode Reverse
Recovery Time (Typical)
100
1000
5
VGS = 10 V
Pulse Test
4
ID = 5 A
3
1A
2
2.5 A
1
0
-25
Reverse Recovery Time trr (ns)
Drain Current ID (A)
6V
5.6 V
Drain to Source Voltage VDS (V)
VDS = 10 V
Pulse Test
Static Drain to Source on State Resistance
RDS(on) (Ω)
7V
10 V
5.8 V
Drain to Source Voltage VDS (V)
10
0
8
0
1000
100
Ta = 25°C
Pulse Test
100
di / dt = 100 A / μs
VGS = 0, Ta = 25°C
10
0
25
50
75
100 125 150
Case Temperature Tc (°C)
R07DS0610EJ0100 Rev.1.00
Mar 16, 2012
1
10
100
Reverse Drain Current IDR (A)
Page 3 of 6
RJK6006DPP-E0
Preliminary
Typical Capacitance vs.
Drain to Source Voltage (Typical)
Ciss
100
Coss
10
Crss
1
0
100
200
300
Reverse Drain Current IDR (A)
VGS
600
VDD = 480 V
300 V
100 V
VDS
400
200
8
0
16
0
24
32
Gate to Source Cutoff Voltage
vs. Case Temperature (Typical)
4
0
0.4
0.8
1.2
1.6
2.0
Source to Drain Voltage VSD (V)
R07DS0610EJ0100 Rev.1.00
Mar 16, 2012
12
4
VDD = 480 V
300 V
100 V
Reverse Drain Current vs.
Source to Drain Voltage (Typical)
VGS = 0
Ta = 25 °C
Pulse Test
16
8
Gate Charge Qg (nC)
8
0
ID = 5 A
Ta = 25 °C
Drain to Source Voltage VDS (V)
16
12
800
5
Gate to Source Voltage VGS (V)
1000
Drain to Source Voltage VDS (V)
VGS = 0
f = 1 MHz
Ta = 25°C
Gate to Source Cutoff Voltage VGS(off) (V)
Capacitance C (pF)
10000
Dynamic Input Characteristics (Typical)
40
VDS = 10 V
4
3
ID = 10 mA
1 mA
2
0.1 mA
1
0
-25
0
25
50
75
Case Temperature
100 125 150
Tc (°C)
Page 4 of 6
RJK6006DPP-E0
Preliminary
Normalized Transient Thermal Impedance γs (t)
Normalized Transient Thermal Impedance vs. Pulse Width
10
Tc = 25°C
1
D=1
0.5
0.2
0.1
0.1
0.05
θ ch – c(t) = γ s (t) • θ ch – c
θ ch – c = 4.31°C/W, Tc = 25°C
0.02
0.01 ulse
tp
0.01 1sho
PDM
D=
PW
T
PW
T
0.001
10 μ
100 μ
1m
10 m
100 m
1
10
100
Pulse Width PW (s)
Switching Time Test Circuit
Waveform
Vout
Monitor
Vin Monitor
90%
D.U.T.
RL
10 Ω
Vin
10 V
VDD
= 200 V
Vin
Vout
10%
10%
10%
90%
td(on)
R07DS0610EJ0100 Rev.1.00
Mar 16, 2012
tr
90%
td(off)
tf
Page 5 of 6
RJK6006DPP-E0
Preliminary
Package Dimensions
Package Name
TO-220FP
JEITA Package Code

RENESAS Code
PRSS0003AG-A
Previous Code

MASS[Typ.]
1.9g
10.16 ± 0.20
2.54 ± 0.20
6.68 ± 0.20
3.3 ± 0.2
1.28 ± 0.30
3.18 ± 0.20
15.87 ± 0.20
3.18 ± 0.10
12.98 ± 0.30
Unit: mm
Max 1.47
2.76 ± 0.20
0.80 ± 0.20
0.50
4.7 ± 0.2
5.08 ± 0.20
Ordering Information
Orderable Part Number
RJK6006DPP-E0#T2
R07DS0610EJ0100 Rev.1.00
Mar 16, 2012
Quantity
1000 pcs
Shipping Container
Box (Tube)
Page 6 of 6
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