RENESAS HM62V16256CBP

To all our customers
Regarding the change of names mentioned in the document, such as Hitachi
Electric and Hitachi XX, to Renesas Technology Corp.
The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas
Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog
and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.)
Accordingly, although Hitachi, Hitachi, Ltd., Hitachi Semiconductors, and other Hitachi brand
names are mentioned in the document, these names have in fact all been changed to Renesas
Technology Corp. Thank you for your understanding. Except for our corporate trademark, logo and
corporate statement, no changes whatsoever have been made to the contents of the document, and
these changes do not constitute any alteration to the contents of the document itself.
Renesas Technology Home Page: http://www.renesas.com
Renesas Technology Corp.
Customer Support Dept.
April 1, 2003
Cautions
Keep safety first in your circuit designs!
1. Renesas Technology Corporation puts the maximum effort into making semiconductor products better
and more reliable, but there is always the possibility that trouble may occur with them. Trouble with
semiconductors may lead to personal injury, fire or property damage.
Remember to give due consideration to safety when making your circuit designs, with appropriate
measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or
(iii) prevention against any malfunction or mishap.
Notes regarding these materials
1. These materials are intended as a reference to assist our customers in the selection of the Renesas
Technology Corporation product best suited to the customer's application; they do not convey any
license under any intellectual property rights, or any other rights, belonging to Renesas Technology
Corporation or a third party.
2. Renesas Technology Corporation assumes no responsibility for any damage, or infringement of any
third-party's rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or
circuit application examples contained in these materials.
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algorithms represents information on products at the time of publication of these materials, and are
subject to change by Renesas Technology Corporation without notice due to product improvements or
other reasons. It is therefore recommended that customers contact Renesas Technology Corporation
or an authorized Renesas Technology Corporation product distributor for the latest product information
before purchasing a product listed herein.
The information described here may contain technical inaccuracies or typographical errors.
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rising from these inaccuracies or errors.
Please also pay attention to information published by Renesas Technology Corporation by various
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(http://www.renesas.com).
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Corporation assumes no responsibility for any damage, liability or other loss resulting from the
information contained herein.
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or system that is used under circumstances in which human life is potentially at stake. Please contact
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8. Please contact Renesas Technology Corporation for further details on these materials or the products
contained therein.
HM62V16256CBP Series
4 M SRAM (256-kword × 16-bit)
ADE-203-1259 (Z)
Preliminary
Rev. 0.0
Mar. 21, 2001
Description
The Hitachi HM62V16256CBP Series is 4-Mbit static RAM organized 262,144-word × 16-bit.
HM62V16256CBP Series has realized higher density, higher performance and low power consumption by
employing CMOS process technology (6-transistor memory cell). It offers low power standby power
dissipation; therefore, it is suitable for battery backup systems. It is packaged in 48 bumps chip size package
with 0.75 mm bump pitch for high density surface mounting.
Features
•
•
•
•
•
•
•
Single 2.5 V and 3.0 V supply: 2.2 V to 3.6 V
Fast access time: 55 ns/70 ns (max)
Power dissipation:
 Active: 5.0 mW/MHz (typ)(VCC = 2.5 V)
: 6.0 mW/MHz (typ) (VCC = 3.0 V)
 Standby: 2 µW (typ) (VCC = 2.5 V)
: 2.4 µW (typ) (VCC = 3.0 V)
Completely static memory.
 No clock or timing strobe required
Equal access and cycle times
Common data input and output.
 Three state output
Battery backup operation.
 2 chip selection for battery backup
Preliminary: The specification of this device are subject to change without notice. Please contact your
nearest Hitachi’s Sales Dept. regarding specification.
HM62V16256CBP Series
Ordering Information
Type No.
Access time
Package
HM62V16256CLBP-5
HM62V16256CLBP-7
55 ns
70 ns
48-bumps CSP with 0.75 mm bump pitch (TBP-48)
HM62V16256CLBP-5SL
HM62V16256CLBP-7SL
55 ns
70 ns
2
HM62V16256CBP Series
Pin Arrangement
48-bumps CSP
1
2
3
4
5
6
A
LB
OE
A0
A1
A2
CS2
B
I/O8
UB
A3
A4
CS1
I/O0
C
I/O9
I/O10
A5
A6
I/O1
I/O2
D
VSS
I/O11
A17
A7
I/O3
VCC
E
VCC
I/O12
NC
A16
I/O4
VSS
F
I/O14
I/O13
A14
A15
I/O5
I/O6
G
I/O15
NC
A12
A13
WE
I/O7
H
NC
A8
A9
A10
A11
NC
(Top view)
Pin Description
Pin name
Function
A0 to A17
Address input
I/O0 to I/O15
Data input/output
CS1
Chip select 1
CS2
Chip select 2
WE
Write enable
OE
Output enable
LB
Lower byte select
UB
Upper byte select
VCC
Power supply
VSS
Ground
NC
No connection
3
HM62V16256CBP Series
Block Diagram
LSB
A12
A11
A10
A9
A8
A13
A14
A15
A16
A17
MSB
A7
V CC
V SS
Row
decoder
I/O0
•
•
•
•
•
Memory matrix
2,048 x 2,048
Column I/O
•
•
Input
data
control
Column decoder
I/O15
LSB A4 A3 A2 A1 A5 A6 A0 MSB
•
•
CS2
CS1
LB
UB
WE
OE
4
Control logic
•
•
HM62V16256CBP Series
Operation Table
CS1
CS2
WE
OE
UB
LB
I/O0 to I/O7
I/O8 to I/O15
Operation
H
×
×
×
×
×
High-Z
High-Z
Standby
×
L
×
×
×
×
High-Z
High-Z
Standby
×
×
×
×
H
H
High-Z
High-Z
Standby
L
H
H
L
L
L
Dout
Dout
Read
L
H
H
L
H
L
Dout
High-Z
Lower byte read
L
H
H
L
L
H
High-Z
Dout
Upper byte read
L
H
L
×
L
L
Din
Din
Write
L
H
L
×
H
L
Din
High-Z
Lower byte write
L
H
L
×
L
H
High-Z
Din
Upper byte write
L
H
H
H
×
×
High-Z
High-Z
Output disable
Note: H: V IH, L: VIL, ×: VIH or VIL
Absolute Maximum Ratings
Parameter
Symbol
Value
Unit
Power supply voltage relative to V SS
VCC
–0.5 to + 4.6
1
V
2
Terminal voltage on any pin relative to V SS
VT
–0.5* to V CC + 0.3*
V
Power dissipation
PT
1.0
W
Storage temperature range
Tstg
–55 to +125
°C
Storage temperature range under bias
Tbias
–20 to +85
°C
Notes: 1. VT min: –3.0 V for pulse half-width ≤ 30 ns.
2. Maximum voltage is +4.6 V.
DC Operating Conditions
Parameter
Symbol
Min
Typ
Max
Unit
Supply voltage
VCC
2.2
2.5/3.0
3.6
V
VSS
0
0
0
V
VCC = 2.2 V to 2.7 V VIH
2.0
—
VCC + 0.3
V
VCC = 2.7 V to 3.6 V VIH
2.0
—
VCC + 0.3
V
VCC = 2.2 V to 2.7 V VIL
–0.2
—
0.4
V
1
VCC = 2.7 V to 3.6 V VIL
–0.3
—
0.6
V
1
–20
—
70
°C
Input high voltage
Input low voltage
Ambient temperature range
Note:
Ta
Note
1. VIL min: –3.0 V for pulse half-width ≤ 30 ns.
5
HM62V16256CBP Series
DC Characteristics
Parameter
Symbol Min
Typ* 1
Max
Unit
Test conditions
Input leakage current
|ILI|
—
—
1
µA
Vin = VSS to V CC
Output leakage current
|ILO |
—
—
1
µA
CS1 = VIH or CS2 = VIL or
OE = VIH or WE = VIL or
LB = UB = VIH , VI/O = VSS to V CC
Operating current
I CC
—
5
20
mA
CS1 = VIL, CS2 = VIH,
Others = VIH/VIL, I I/O = 0 mA
Average operating current
I CC1
—
18
25
mA
Min. cycle, duty = 100%,
I I/O = 0 mA, CS1 = VIL, CS2 = VIH,
Others = VIH/VIL
I CC2
—
2
5
mA
Cycle time = 1 µs, duty = 100%,
I I/O = 0 mA, CS1 ≤ 0.2 V,
CS2 ≥ V CC – 0.2 V
VIH ≥ V CC – 0.2 V, VIL ≤ 0.2 V
Standby current
—
0.1
0.3
mA
CS2 = VIL
2
—
0.8
20
µA
0 V ≤ Vin
(1) 0 V ≤ CS2 ≤ 0.2 V or
(2) CS1 ≥ V CC – 0.2 V,
CS2 ≥ V CC – 0.2 V or
(3) LB = UB ≥ V CC – 0.2 V
CS2 ≥ V CC – 0.2 V
CS1 ≤ 0.2 V
I SB1*3
—
0.8
10
µA
VCC =2.2 V to 2.7 V VOH
2.0
—
—
V
I OH = –0.5 mA
VCC =2.7 V to 3.6 V VOH
2.4
—
—
V
I OH = –1 mA
VCC =2.2 V to 3.6 V VOH
VCC – 0.2—
—
V
I OH = –100 µA
VCC =2.2 V to 2.7 V VOL
—
—
0.4
V
I OL = 0.5 mA
VCC =2.7 V to 3.6 V VOL
—
—
0.4
V
I OL = 2 mA
VCC =2.2 V to 3.6 V VOL
—
—
0.2
V
I OL = 100 µA
Standby current
Output high
voltage
Output low
voltage
I SB
I SB1*
Notes: 1. Typical values are at VCC = 2.5 V/3.0 V, Ta = +25°C and not guaranteed.
2. This characteristic is guaranteed only for L-version.
3. This characteristic is guaranteed only for L-SL version.
6
HM62V16256CBP Series
Capacitance (Ta = +25°C, f = 1.0 MHz)
Parameter
Symbol
Min
Typ
Max
Unit
Test conditions
Note
Input capacitance
Cin
—
—
8
pF
Vin = 0 V
1
Input/output capacitance
CI/O
—
—
10
pF
VI/O = 0 V
1
Note:
1. This parameter is sampled and not 100% tested.
7
HM62V16256CBP Series
AC Characteristics (Ta = –20 to +70°C, VCC = 2.2 V to 3.6 V, unless otherwise noted.)
Test Conditions
•
•
•
•
•
•
•
Input pulse levels: VIL = 0.4 V, VIH = 2.0 V (VCC = 2.2 V to 2.7 V)
VIL = 0.4 V, VIH = 2.2 V (VCC = 2.7 V to 3.6 V)
Input rise and fall time: 5 ns
Input timing reference levels: 1.1 V (VCC = 2.2 V to 2.7 V)
Output timing reference levels: 1.1 V (VCC = 2.2 V to 2.7 V)
Input timing reference levels: 1.4 V (VCC = 2.7 V to 3.6 V)
Output timing reference levels: 1.4 V (HM62V16256CBP–5, V CC = 2.7 V to 3.6 V)
: 2.0 V/0.8 V (HM62V16256CBP–7, VCC = 2.7 V to 3.6 V)
Output load: See figures (Including scope and jig)
VTM
1.4 V
R1
RL=500 Ω
Dout
R1 = 3070 Ω
30pF
Output load (A)
(VCC = 2.2 V to 2.7 V)
8
R2
R2 = 3150 Ω
VTM = 2.3 V
Dout
50pF
Output load (B)
(VCC = 2.7 V to 3.6 V)
HM62V16256CBP Series
Read Cycle
HM62V16256CBP
-5
-7
Parameter
Symbol
Min
Max
Min
Max
Unit
Notes
Read cycle time
t RC
55
—
70
—
ns
Address access time
t AA
—
55
—
70
ns
Chip select access time
t ACS1
—
55
—
70
ns
t ACS2
—
55
—
70
ns
Output enable to output valid
t OE
—
35
—
40
ns
Output hold from address change
t OH
10
—
10
—
ns
LB, UB access time
t BA
—
55
—
70
ns
Chip select to output in low-Z
t CLZ1
10
—
10
—
ns
2, 3
t CLZ2
10
—
10
—
ns
2, 3
LB, UB enable to low-z
t BLZ
5
—
5
—
ns
2, 3
Output enable to output in low-Z
t OLZ
5
—
5
—
ns
2, 3
Chip deselect to output in high-Z
t CHZ1
0
20
0
25
ns
1, 2, 3
t CHZ2
0
20
0
25
ns
1, 2, 3
LB, UB disable to high-Z
t BHZ
0
20
0
25
ns
1, 2, 3
Output disable to output in high-Z
t OHZ
0
20
0
25
ns
1, 2, 3
9
HM62V16256CBP Series
Write Cycle
HM62V16256CBP
-5
-7
Parameter
Symbol
Min
Max
Min
Max
Unit
Notes
Write cycle time
t WC
55
—
70
—
ns
Address valid to end of write
t AW
50
—
60
—
ns
Chip selection to end of write
t CW
50
—
60
—
ns
5
Write pulse width
t WP
40
—
50
—
ns
4
LB, UB valid to end of write
t BW
50
—
55
—
ns
Address setup time
t AS
0
—
0
—
ns
6
Write recovery time
t WR
0
—
0
—
ns
7
Data to write time overlap
t DW
25
—
30
—
ns
Data hold from write time
t DH
0
—
0
—
ns
Output active from end of write
t OW
5
—
5
—
ns
2
Output disable to output in High-Z
t OHZ
0
20
0
25
ns
1, 2
Write to output in high-Z
t WHZ
0
20
0
25
ns
1, 2
Notes: 1. t CHZ, tOHZ , t WHZ and tBHZ are defined as the time at which the outputs achieve the open circuit
conditions and are not referred to output voltage levels.
2. This parameter is sampled and not 100% tested.
3. At any given temperature and voltage condition, t HZ max is less than tLZ min both for a given device
and from device to device.
4. A write occures during the overlap of a low CS1, a high CS2, a low WE and a low LB or a low UB.
A write begins at the latest transition among CS1 going low, CS2 going high, WE going low and LB
going low or UB going low. A write ends at the earliest transition among CS1 going high, CS2
going low, WE going high and LB going high or UB going high. tWP is measured from the beginning
of write to the end of write.
5. t CW is measured from the later of CS1 going low or CS2 going high to the end of write.
6. t AS is measured from the address valid to the beginning of write.
7. t WR is measured from the earliest of CS1 or WE going high or CS2 going low to the end of write
cycle.
10
HM62V16256CBP Series
Timing Waveform
Read Cycle
t RC
Address
Valid address
tAA
tACS1
CS1
tCLZ1*2, 3
CS2
tCHZ1*1, 2, 3
tACS2
tCLZ2*2, 3
tCHZ2*1, 2, 3
tBHZ*1, 2, 3
tBA
LB, UB
tBLZ*2, 3
tOHZ*1, 2, 3
tOE
OE
tOLZ*2, 3
Dout
High impedance
tOH
Valid data
11
HM62V16256CBP Series
Write Cycle (1) (WE Clock)
tWC
Valid address
Address
tWR*7
tCW*5
CS1
tCW*5
CS2
tBW
LB, UB
tAW
tWP*4
WE
tAS*6
tDW
tDH
Valid data
Din
tWHZ*1, 2
tOW*2
High impedance
Dout
12
HM62V16256CBP Series
Write Cycle (2) (CS Clock, OE = VIH)
tWC
Valid address
Address
tAW
tAS*6
tWR*7
tCW*5
CS1
tCW*5
CS2
tBW
LB, UB
tWP*4
WE
tDW
tDH
Valid data
Din
High impedance
Dout
13
HM62V16256CBP Series
Write Cycle (3) (LB, UB Clock, OE = VIH)
tWC
Valid address
Address
tAW
tCW*5
tWR*7
CS1
tCW*5
CS2
tAS*6
tBW
LB, UB
tWP*4
WE
tDW
Valid data
Din
High impedance
Dout
14
tDH
HM62V16256CBP Series
Low VCC Data Retention Characteristics (Ta = –20 to +70°C)
Parameter
Symbol
Min
Typ* 4
Max
Unit
Test conditions*3
VCC for data retention
VDR
2.0
—
3.6
V
Vin ≥ 0V
(1) 0 V ≤ CS2 ≤ 0.2 V or
(2) CS2 ≥ V CC – 0.2 V
CS1 ≥ V CC – 0.2 V or
(3) LB = UB ≥ V CC – 0.2 V,
CS2 ≥ V CC – 0.2 V,
CS1 ≤ 0.2 V
Data retention current
I CCDR*1
—
0.8
20
µA
VCC = 3.0 V, Vin ≥ 0V
(1) 0 V ≤ CS2 ≤ 0.2 V or
(2) CS2 ≥ V CC – 0.2 V,
CS1 ≥ V CC – 0.2 V or
(3) LB = UB ≥ V CC – 0.2 V,
CS2 ≥ V CC – 0.2 V,
CS1 ≤ 0.2 V
I CCDR*2
—
0.8
10
µA
Chip deselect to data
retention time
t CDR
0
—
—
ns
Operation recovery time
tR
t RC* 5
—
—
ns
See retention waveform
Notes: 1. This characteristic is guaranteed only for L-version, 10 µA max. at Ta = –20 to +40°C.
2. This characteristic is guaranteed only for L-SL version, 3 µA max. at Ta = –20 to +40°C.
3. CS2 controls address buffer, WE buffer, CS1 buffer, OE buffer, LB, UB buffer and Din buffer. If
CS2 controls data retention mode, Vin levels (address, WE, OE, CS1, LB, UB, I/O) can be in the
high impedance state. If CS1 controls data retention mode, CS2 must be CS2 ≥ V CC – 0.2 V or 0 V
≤ CS2 ≤ 0.2 V. The other input levels (address, WE, OE, LB, UB, I/O) can be in the high
impedance state.
4. Typical values are at VCC = 3.0 V, Ta = +25˚C and not guaranteed.
5. t RC = read cycle time.
15
HM62V16256CBP Series
Low V CC Data Retention Timing Waveform (1) (CS1 Controlled)
t CDR
Data retention mode
tR
V CC
2.2 V
V DR
2.0 V
CS1
0V
CS1 ≥ VCC – 0.2 V
Low V CC Data Retention Timing Waveform (2) (CS2 Controlled)
t CDR
Data retention mode
tR
V CC
2.2 V
CS2
V DR
0.4 V
0 V < CS2 < 0.2 V
0V
Low V CC Data Retention Timing Waveform (3) (LB, UB Controlled)
t CDR
Data retention mode
V CC
2.2 V
V DR
2.0 V
LB, UB
0V
16
LB, UB ≥ VCC – 0.2 V
tR
HM62V16256CBP Series
Package Dimensions
HM62V16256CLBP Series (TBP-48)
0.75
A
A
B
C
D
E
F
G
H
6.50
Pin 1 Index
4×
0.625
1.375
A
0.15
0.2 C
Index mark
B
6 5 4 3 2 1
0.75
6.50
0.20 C A
0.20 C B
Unit: mm
48 × φ0.35 ± 0.05
φ0.08 M C A B
1.2 Max
0.10 C
0.25 ± 0.05
C
Details of the part A
Hitachi Code
JEDEC
EIAJ
Mass
TBP-48
—
—
0.09 g
17
HM62V16256CBP Series
Cautions
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,
copyright, trademark, or other intellectual property rights for information contained in this document.
Hitachi bears no responsibility for problems that may arise with third party’s rights, including intellectual
property rights, in connection with use of the information contained in this document.
2. Products and product specifications may be subject to change without notice. Confirm that you have
received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of
bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic,
safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for
maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and
other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the
guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or
failure modes in semiconductor devices and employ systemic measures such as fail-safes, so that the
equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage
due to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without
written approval from Hitachi.
7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor
products.
Hitachi, Ltd.
Semiconductor & Integrated Circuits.
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109
URL
NorthAmerica
Europe
Asia
Japan
:
:
:
:
http://semiconductor.hitachi.com/
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http://www.hitachi.co.jp/Sicd/indx.htm
For further information write to:
Hitachi Semiconductor
(America) Inc.
179 East Tasman Drive,
San Jose,CA 95134
Tel: <1> (408) 433-1990
Fax: <1>(408) 433-0223
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Electronic Components Group.
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(Taipei Branch Office)
4/F, No. 167, Tun Hwa North Road,
Hung-Kuo Building,
Taipei (105), Taiwan
Tel : <886>-(2)-2718-3666
Fax : <886>-(2)-2718-8180
Telex : 23222 HAS-TP
URL : http://www.hitachi.com.tw
Hitachi Asia (Hong Kong) Ltd.
Group III (Electronic Components)
7/F., North Tower,
World Finance Centre,
Harbour City, Canton Road
Tsim Sha Tsui, Kowloon,
Hong Kong
Tel : <852>-(2)-735-9218
Fax : <852>-(2)-730-0281
URL : http://semiconductor.hitachi.com.hk
Copyright © Hitachi, Ltd., 2001. All rights reserved. Printed in Japan.
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