R1LV0408C-C Series 4M SRAM (512-kword × 8-bit) REJ03C0099-0200Z Rev. 2.00 May.25.2004 Description The R1LV0408C-C is a 4-Mbit static RAM organized 512-kword × 8-bit. R1LV0408C-C Series has realized higher density, higher performance and low power consumption by employing CMOS process technology (6-transistor memory cell). The R1LV0408C-C Series offers low power standby power dissipation; therefore, it is suitable for battery backup systems. It has packaged in 32-pin SOP, 32-pin TSOP II and 32-pin STSOP. Features • Single 3 V supply: 2.7 V to 3.6 V • Access time: 55/70 ns (max) • Power dissipation: Active: 6 mW/MHz (typ) Standby: 1.5 µW (typ) • Completely static memory. No clock or timing strobe required • Equal access and cycle times • Common data input and output. Three state output • Directly TTL compatible. All inputs and outputs • Battery backup operation. • Operating temperature: −20 to +70°C Rev.2.00, May.25.2004, page 1 of 12 R1LV0408C-C Series Ordering Information Type No. Access time Package R1LV0408CSP-5SC 55 ns 525-mil 32-pin plastic SOP (32P2M-A) R1LV0408CSP-7LC 70 ns R1LV0408CSB-5SC 55 ns R1LV0408CSB-7LC 70 ns R1LV0408CSA-5SC 55 ns R1LV0408CSA-7LC 70 ns Rev.2.00, May.25.2004, page 2 of 12 400-mil 32-pin plastic TSOP II (32P3Y-H) 8mm × 13.4mm STSOP (32P3K-B) R1LV0408C-C Series Pin Arrangement 32-pin SOP 32-pin TSOP A18 A16 A14 A12 A7 A6 A5 A4 A3 A2 A1 A0 I/O0 I/O1 I/O2 VSS 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 32-pin STSOP VCC A15 A17 WE# A13 A8 A9 A11 OE# A10 CS# I/O7 I/O6 I/O5 I/O4 I/O3 (Top view) Pin Description Pin name Function A0 to A18 Address input I/O0 to I/O7 Data input/output CS# (CS) Chip select OE# (OE) Output enable WE# (WE) Write enable VCC Power supply VSS Ground Rev.2.00, May.25.2004, page 3 of 12 A11 A9 A8 A13 WE# A18 A15 VCC A17 A16 A14 A12 A7 A6 A5 A4 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 (Top view) OE# A10 CS# I/O7 I/O6 I/O5 I/O4 I/O3 VSS I/O2 I/O1 I/O0 A0 A1 A2 A3 R1LV0408C-C Series Block Diagram LSB MSB V CC A11 A9 A8 A15 A18 A10 A13 A17 A16 A14 A12 V SS Row Decoder I/O0 • • • • • Memory Matrix 2,048 × 2,048 • • Column I/O Input Data Control Column Decoder I/O7 LSB A3 A2A1A0 A4 A5 A6 A7 MSB •• CS# WE# Timing Pulse Generator Read/Write Control OE# Rev.2.00, May.25.2004, page 4 of 12 • • R1LV0408C-C Series Operation Table WE# CS# OE# Mode VCC current I/O0 to I/O7 Ref. cycle × H × Not selected ISB, ISB1 High-Z H L H Output disable ICC High-Z H L L Read ICC Dout Read cycle L L H Write ICC Din Write cycle (1) L L L Write ICC Din Write cycle (2) Note: H: VIH, L: VIL, ×: VIH or VIL Absolute Maximum Ratings Parameter Symbol Value Power supply voltage relative to VSS VCC −0.5 to +4.6 Unit V 1 2 Terminal voltage on any pin relative to VSS VT −0.5* to VCC + 0.5* Power dissipation PT 0.7 W Operating temperature Topr −20 to +70 °C Storage temperature range Tstg −65 to +150 °C Storage temperature range under bias Tbias −20 to +85 °C V Notes: 1. VT min: −3.0 V for pulse half-width ≤ 30 ns. 2. Maximum voltage is +4.6 V. DC Operating Conditions (Ta = −20 to +70°C) Parameter Symbol Min Typ Max Unit Supply voltage VCC 2.7 3.0 3.6 V VSS 0 0 0 V VIH 2.2 VCC + 0.3 V 0.6 V Input high voltage Input low voltage Note: VIL −0.3* 1. VIL min: −3.0 V for pulse half-width ≤ 30 ns. Rev.2.00, May.25.2004, page 5 of 12 1 R1LV0408C-C Series DC Characteristics Parameter Symbol Min Input leakage current |ILI| Output leakage current |ILO| Operating current Average operating current Standby current Standby −5SC current −7LC to +70°C to +40°C Typ Max Unit Test conditions 1 µA Vin = VSS to VCC 1 µA CS# = VIH or OE# = VIH or WE# = VIL or VI/O = VSS to VCC ICC 5*1 10 mA CS# = VIL, Others = VIH/ VIL, II/O = 0 mA ICC1 8*1 25 mA Min. cycle, duty = 100%, CS# = VIL, Others = VIH/VIL II/O = 0 mA ICC2 2*1 5 mA Cycle time = 1 µs, duty = 100%, II/O = 0 mA, CS# ≤ 0.2 V, VIH ≥ VCC − 0.2 V, VIL ≤ 0.2 V ISB 0.1*1 0.3 mA CS# = VIH ISB1 Vin ≥ 0 V, CS# ≥ VCC − 0.2 V ISB1 8 µA 2 3 µA 1 0.7* to +25°C ISB1 0.5* 3 µA to +70°C ISB1 to +40°C ISB1 16 µA 2 10 µA 1 0.7* ISB1 0.5* 10 µA Output low voltage VOL 0.4 V VOL2 0.2 V IOL = 100 µA Output high voltage VOH 2.4 V IOH = −1.0 mA VOH2 VCC − 0.2 V IOH = −0.1 mA to +25°C IOL = 2.1 mA Notes: 1. Typical values are at VCC = 3.0 V, Ta = +25°C and specified loading, and not guaranteed. 2. Typical values are at VCC = 3.0 V, Ta = +40°C and specified loading, and not guaranteed. Capacitance (Ta = +25°C, f = 1.0 MHz) Parameter Symbol Input capacitance Cin 8 Input/output capacitance CI/O 10 Note: Min Typ 1. This parameter is sampled and not 100% tested. Rev.2.00, May.25.2004, page 6 of 12 Max Unit Test conditions Note pF Vin = 0 V 1 pF VI/O = 0 V 1 R1LV0408C-C Series AC Characteristics (Ta = −20 to +70°C, VCC = 2.7 V to 3.6 V, unless otherwise noted.) Test Conditions • • • • Input pulse levels: VIL = 0.4 V, VIH = 2.4 V Input rise and fall time: 5 ns Input and output timing reference levels: 1.5 V Output load: 1 TTL Gate + CL (50 pF) (R1LV0408C-5SC) 1 TTL Gate + CL (100 pF) (R1LV0408C-7LC) (Including scope and jig) Read Cycle R1LV0408C-C -5SC -7LC Parameter Symbol Min Max Min Max Unit Read cycle time tRC 55 70 ns Address access time tAA 55 70 ns Chip select access time tCO 55 70 ns Output enable to output valid tOE 30 35 ns Chip select to output in low-Z tLZ 10 10 ns 2 Output enable to output in low-Z tOLZ 5 5 ns 2 Chip deselect to output in high-Z tHZ 0 20 0 25 ns 1, 2 Output disable to output in high-Z tOHZ 0 20 0 25 ns 1, 2 Output hold from address change tOH 10 10 ns Rev.2.00, May.25.2004, page 7 of 12 Notes R1LV0408C-C Series Write Cycle R1LV0408C-C -5SC -7LC Parameter Symbol Min Max Min Max Unit Notes Write cycle time tWC 55 70 ns Chip selection to end of write tCW 50 60 ns 4 Address setup time tAS 0 0 ns 5 Address valid to end of write tAW 50 60 ns Write pulse width tWP 40 50 ns 3, 12 Write recovery time tWR 0 0 ns 6 Write to output in high-Z tWHZ 0 20 0 25 ns 1, 2, 7 Data to write time overlap tDW 25 30 ns Data hold from write time tDH 0 0 ns Output active from end of write tOW 5 5 ns 2 Output disable to output in high-Z tOHZ 0 20 0 25 ns 1, 2, 7 Notes: 1. tHZ, tOHZ and tWHZ are defined as the time at which the outputs achieve the open circuit conditions and are not referred to output voltage levels. 2. This parameter is sampled and not 100% tested. 3. A write occurs during the overlap (tWP) of a low CS# and a low WE#. A write begins at the later transition of CS# going low or WE# going low. A write ends at the earlier transition of CS# going high or WE# going high. tWP is measured from the beginning of write to the end of write. 4. tCW is measured from CS# going low to the end of write. 5. tAS is measured from the address valid to the beginning of write. 6. tWR is measured from the earlier of WE# or CS# going high to the end of write cycle. 7. During this period, I/O pins are in the output state so that the input signals of the opposite phase to the outputs must not be applied. 8. If the CS# low transition occurs simultaneously with the WE# low transition or after the WE# transition, the output remain in a high impedance state. 9. Dout is the same phase of the write data of this write cycle. 10. Dout is the read data of next address. 11. If CS# is low during this period, I/O pins are in the output state. Therefore, the input signals of the opposite phase to the outputs must not be applied to them. 12. In the write cycle with OE# low fixed, tWP must satisfy the following equation to avoid a problem of data bus contention. tWP ≥ tDW min + tWHZ max Rev.2.00, May.25.2004, page 8 of 12 R1LV0408C-C Series Timing Waveform Read Timing Waveform (WE# = VIH) tRC Address Valid address tAA tCO CS# tLZ tHZ tOE tOLZ OE# tOHZ Dout High impedance Valid data tOH Rev.2.00, May.25.2004, page 9 of 12 R1LV0408C-C Series Write Timing Waveform (1) (OE# Clock) tWC Address Valid address tAW tWR OE# tCW CS# *8 tWP tAS WE# tOHZ Dout High impedance tDW Din Rev.2.00, May.25.2004, page 10 of 12 Valid data tDH R1LV0408C-C Series Write Timing Waveform (2) (OE# Low Fixed) tWC Address Valid address tCW tWR CS# *8 tAW tWP WE# tOH tAS tOW tWHZ *9 Dout High impedance tDW tDH *11 Din Rev.2.00, May.25.2004, page 11 of 12 Valid data *10 R1LV0408C-C Series Low VCC Data Retention Characteristics (Ta = −20 to +70°C) Parameter Symbol Min Typ VCC for data retention VDR 2 ICCDR Data retention current −5SC to +70°C to +40°C −7LC ICCDR VCC = 3.0 V, Vin ≥ 0 V 0.7* 3 µA CS# ≥ VCC − 0.2 V 1 3 µA 0.5* to +70°C ICCDR Chip deselect to data retention time Operation recovery time 16 µA 0.7* 2 10 µA 0.5* 1 10 µA ns tRC* ns ICCDR tCDR 0 tR CS# ≥ VCC − 0.2 V, Vin ≥ 0 V µA to +25°C V 8 ICCDR ICCDR 2 to +25°C to +40°C Max Unit Test conditions*3 4 See retention waveform Notes: 1. Typical values are at VCC = 3.0 V, Ta = +25°C and specified loading, and not guaranteed. 2. Typical values are at VCC = 3.0 V, Ta = +40°C and specified loading, and not guaranteed. 3. CS# controls address buffer, WE# buffer, OE# buffer, and Din buffer. In data retention mode, Vin levels (address, WE#, OE#, I/O) can be in the high impedance state. 4. tRC = read cycle time. Low VCC Data Retention Timing Waveform (CS# Controlled) tCDR Data retention mode VCC 2.7 V 2.2 V VDR CS# 0V Rev.2.00, May.25.2004, page 12 of 12 CS# ≥ VCC – 0.2 V tR Revision History Rev. Date R1LV0408C-C Series Data Sheet Contents of Modification Page Description 1.00 Jul. 24, 2003 Initial issue 2.00 May. 25, 2004 1 Features Standby: 2.4 µW (typ) to 1.5 µW (typ) 5 Absolute Maximum Ratings Notes 2 : +7.0 V to +4.6 V 5 DC Operating Conditions VIHmin 2.0 V to 2.2 V VILmax 0.8 V to 0.6 V 6 DC characteristics −5SC and −7LC items’ description are divided. 12 Low VCC Data Retention Characteristics −5SC and −7LC items’ description are divided. 12 Low VCC Data Retention Timing Waveform 4.5 V to 2.7 V 2.4 V to 2.2 V Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Keep safety first in your circuit designs! 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. 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