DF005S2 - DF10S2
Bridge Rectifier
Features
Description
• Maximum Surge Rating: IFSM = 85 A
I2t = 30 A2Sec
• Optimized VF: Typical 0.93 V at 2 A, 25°C
• DF10S Socket Compatible
• Glass Passivated Junctions
• Lead Free Compliant to EU RoHS 2002/95/EU Directives
• Green Molding Compound: IEC61249
• Qualified with IR Reflow and Wave Soldering
With the ever-pressing need to improve power supply
efficiency, improve surge rating, improve reliability, and
reduce size, the DFxS2 family sets a new standard in
performance.
The new design offers an improved surge rating of 85 A.
This is especially important when striving to improve reliability and increase efficiency. High efficiency designs
strive to reduce circuit resistance, which, unfortunately
can result in increased inrush surge. As such higher
surge current ratings can be required to maintain or
improve reliability.
The design also offers improved efficiency by achieving a
2 A VF of 1.1 V maximum at 25°C. This lower VF also
supports cooler and more efficient operation.
~
Finally, the DFxS2 achieves all this in a SDIP surface
mount form factor, reducing board space and volumetric
requirements vs. competitive devices.
+
IN
OUT
~
-
SDIP
Ordering Information
Part Number
Top Mark
Package
Packing Method
DF005S2
DF005S2
SDIP 4L
Tape and Reel
DF01S2
DF01S2
SDIP 4L
Tape and Reel
DF02S2
DF02S2
SDIP 4L
Tape and Reel
DF04S2
DF04S2
SDIP 4L
Tape and Reel
DF06S2
DF06S2
SDIP 4L
Tape and Reel
DF08S2
DF08S2
SDIP 4L
Tape and Reel
DF10S2
DF10S2
SDIP 4L
Tape and Reel
© 2014 Fairchild Semiconductor Corporation
DF005S2 - DF10S2 Rev. 1.2
www.fairchildsemi.com
DF005S2 - DF10S2 — Bridge Rectifier
June 2015
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted.
Symbol
Parameter
Value
DF005S2 DF01S2 DF02S2 DF04S2 DF06S2 DF08S2 DF10S2
Unit
VRRM
Maximum Recurrent Peak
Reverse Voltage
50
100
200
400
600
800
1000
V
VRMS
Maximum RMS Bridge Input
Voltage
35
70
140
280
420
560
700
V
VDC
Maximum DC Blocking
Voltage
50
100
200
400
600
800
1000
V
IF(AV)
Maximum Average Forward
Current TA = 40°C
2.0
A
IFSM
Peak Forward Surge Current
8.3 ms Single Half-Sine
Wave Superimposed on
Rated Load(JEDEC Method)
85
A
TSTG
Storage Temperature Range
-55 to +150
°C
Operating Junction
Temperature Range
-55 to +150
°C
TJ
Thermal Characteristics(1)
Symbol
RθJA
ψJL
Parameter
Conditions
Max.
Single-Die Measurement
(Maximum Land Pattern: 13 x 13 mm)
60
Multi-Die Measurement
(Maximum Land Pattern: 13 x 13 mm)
50
Multi-Die Measurement
(Minimum Land Pattern: 1.3 x 1.5 mm)
100
Thermal Characterization
Single-Die Measurement
Parameter, Junction to Lead (Maximum and Minimum Land Pattern)
25
Thermal Resistance,
Junction to Ambient
Unit
°C/W
°C/W
Note:
1. The thermal resistances (RθJA & ψJL) are characterized with the device mounted on the following FR4 printed circuit
boards, as shown in Figure 1 and Figure 2. PCB size: 76.2 x 114.3 mm.
Heating effect from adjacent dice is considered and only two dices are powered at the same time.
F
S
S
F
F
S
S
F
Figure 2. Minimum Pads of 2 oz Copper
Figure 1. Maximum Pads of 2 oz Copper
© 2014 Fairchild Semiconductor Corporation
DF005S2 - DF10S2 Rev. 1.2
www.fairchildsemi.com
2
DF005S2 - DF10S2 — Bridge Rectifier
Absolute Maximum Ratings
Values are at TA = 25°C unless otherwise noted.
Symbol
VF
Parameter
Conditions
Min.
Typ.
Forward Voltage Drop per Bridge Element IF = 2.0 A
IR
DC Reverse Current
at Rated DC Blocking Voltage
I2t
Rating for Fusing (t < 8.3 ms)
CJ
Junction Capacitance
© 2014 Fairchild Semiconductor Corporation
DF005S2 - DF10S2 Rev. 1.2
Max.
Unit
1.1
V
TJ = 25°C
3
TJ = 125°C
500
30
VR = 4.0 V,
f = 1.0 MHz
23
μA
A2S
pF
www.fairchildsemi.com
3
DF005S2 - DF10S2 — Bridge Rectifier
Electrical Characteristics
100
Reverse Current, IR[μA]
Forward Current, IF[A]
10
1
o
TJ=150 C
o
0.1
TJ=25 C
o
TJ=125 C
10
o
o
TJ=125 C
TJ=150 C
1
o
TJ=25 C
0.1
0.01
o
TJ= -55 C
0.01
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
o
TJ=-55 C
1.1
1E-3
200
1.2
400
Forward Voltage Drop, VF[V]
Figure 3. Typical Instantaneous Forward
Characteristics
1000
100
IFSM, Peak Forward Surge Current [A]
Average Current [DC]
800
Figure 4. Typical Reverse Characteristics
2.0
1.5
Max Pad (Sigle die)
1.0
0.5
0.0
40
600
Reverse Voltage, VR[V]
60
80
100
120
140
160
180
90
80
70
60
50
40
30
20
10
0
200
o
0
20
40
60
80
100
Number of Cycles at 60 Hz
Ambient Temperature [ C]
Figure 5. Maximum Average Current vs.
Ambient Temperature
Figure 6. Peak Forward Surge Current vs.
Number of Cycles at 60Hz
40
f = 1 MHz
Juntion Capacitance, CJ[pF]
35
30
25
20
15
10
5
0
0
10
20
30
40
50
Reverse Voltage, VR[V]
Figure 7. Typical Junction Capacitance
© 2014 Fairchild Semiconductor Corporation
DF005S2 - DF10S2 Rev. 1.2
www.fairchildsemi.com
4
DF005S2 - DF10S2 — Bridge Rectifier
Typical Performance Characteristics
DF005S2 - DF10S2 — Bridge Rectifier
Physical Dimensions
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Figure 8. 4-LEAD, SDIP, 6.5 MM WIDE
© 2014 Fairchild Semiconductor Corporation
DF005S2 - DF10S2 Rev. 1.2
www.fairchildsemi.com
5
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Product Status
Advance Information
Formative / In Design
Preliminary
First Production
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Obsolete
Not In Production
Definition
Datasheet contains the design specifications for product development. Specifications may change
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Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild
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The datasheet is for reference information only.
Rev. I74
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