FESD05P30ZL 5 V, 30 pF Unidirectional ESD Protector Features Description • IEC61000-4-2, ±30 kV Contact, ±30 kV Air • IEC61000-4-5, IPP = 5 A (8/20 μs) • Expanded Working Voltage, VRWM = 5.0 V +10% =5.5 V • Very Low Clamping Voltage, VC =8.8 V at 5 A (Typical) • Ultra Small SOD882 Package • Fits Solder Pad of 0402 and DFN 2L • RoHS Compliant and Halogen Free • Qualified with IR Reflow and Wave Soldering The FESD05P30ZL ESD protector offers break through size and clamping performance. The device is capable of suppressing up to 50 W of 8 x 20 μsec peak pulse power. It turns on at typical 6.5 V and clamp at 8.8 V in a 5 A surge. It responses fast and effective against to ESD/ Surge events. Applications • • • • Mobile and Portable Devices Space Constrained Systems USB 5 V Power Protections General-Purpose ESD Protection in 5 V Applications The design has been specifically optimized for 5 V applications. It can be operated at 5 V with 10% tolerance. It is also RoHS compliant and Halogen Free. All this capability is packed into a small, flat package, optimized for space constrained applications with similar XY dimensions to a industrial standard 0402 or SOD923. The FESDxZL family supports a max Z dimension of 0.5 mm. It is therefore specifically designed to support low clearance applications. Cathode Anode Ordering Information Part Number Top Mark Package Packing Method FESD05P30ZL A SOD882 Tape and Reel © 2014 Fairchild Semiconductor Corporation FESD05P30ZL Rev. 1.0.0 www.fairchildsemi.com FESD05P30ZL — 5 V, 30 pF Unidirectional ESD Protector October 2014 Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted. Symbol PD ESD TJ TSTG Parameter Total Power Dissipation Electrostatic Discharge Capability Value Unit 250 mW IEC61000-4-2 Contact ±30 IEC61000-4-2 Air ±30 kV Operating Junction Temperature Range -55 to +150 °C Storage Temperature Range -55 to +150 °C Note: 1. All tests conducted at TA = TJ = 25°C unless otherwise noted. Electrical Breakdown Characteristics(2), (3) Values are at TA = 25°C unless otherwise noted. Symbol VBR VRWM IR Parameter Conditions Min. Typ. Max. Unit Breakdown Voltage IT = 1 mA Reverse Standoff Voltage IT ≤ 1 μA 6.2 5.5 V V Maximum Leakage VR = 5.0 V 0.5 μA Max. Unit Notes: 2. All tests conducted at TA = TJ = 25°C unless otherwise noted. 3. IT = 300 μsec square wave current pulse. Surge Response Characteristics(4) Values are at TA = 25°C unless otherwise noted. Symbol Parameter Conditions Min. Typ. TLP Surge Response RD Dynamic Resistance TLP, tP = 100 ns, Cathode to Anode 0.31 Ω 5 A 8 x 20 μsec Exponential Current Surge Response IEC61000-4-5, 8 x 20 μsec Current Surge IPP Test Surge Current VC Clamping Voltage IPP = 5 A 8.8 V RD Dynamic Resistance Calculated at IPP 0.47 Ω Peak Pulse Power Calculated (IPPM x VC) 50 W Junction Capacitance VR = 0 V, f = 1 MHz 31 PPPM CJ 38 pF Note: 4. All tests conducted at TA = TJ = 25°C unless otherwise noted. © 2014 Fairchild Semiconductor Corporation FESD05P30ZL Rev. 1.0.0 www.fairchildsemi.com 2 FESD05P30ZL — 5 V, 30 pF Unidirectional ESD Protector Absolute Maximum Ratings(1) FESD05P30ZL — 5 V, 30 pF Unidirectional ESD Protector Typical Performance Characteristics 10.0 Clamping Voltage, VC [V] 9.5 9.0 8.5 8.0 7.5 7.0 6.5 6.0 0 1 2 3 4 5 6 Peak Pulse Current, IPP [A] Figure 2. 8 x 20 μsec Pulse Waveform Figure 1. Clamping Voltage vs. Peak Pulse Current Power (8 x 20μs waveform ) Typical Leakate Current, IR [nA] 12 TLP Current, [A] 10 8 6 4 2 0 0 2 4 6 8 10 12 14 TLP Voltage, [V] 120 100 VR = 5 V 80 60 40 20 0 -50 0 50 100 150 o Ambient Temperature, TA [ C] Figure 3. Transmission Line Pulsing (TLP) Plot Figure 4. Leakage Current vs. Temperature 35 Typical Capacitance, CJ [pF] o TA = 25 C 30 25 20 15 10 0 1 2 3 4 5 6 Reverse Voltage, vR [V] Figure 5. Typical Capacitance © 2014 Fairchild Semiconductor Corporation FESD05P30ZL Rev. 1.0.0 www.fairchildsemi.com 3 5() 0$; 7<3 /$1'3$77(515(&200(1'$7,21 3,112 ,'(17,),&$7,21 127(681/(6627+(5:,6(63(&,),(' $12,1'8675<67$1'$5'$33/,(6727+,63$&.$*( %$//',0(16,216$5(,10,//,0(7(56 &',0(16,216$5((;&/86,9(2)%855602/')/$6+ $1'7,(%$5(;7586,216 ')6&'(5,9('/$1'3$77(515(&200(1'$7,21 ('5$:,1*180%(5$1'5(9,6,210.762'$5(9 Figure 6. 2-LEAD, SOD882, 0.60 x 1.00 MM BODY, 0.65 MM PITCH © 2014 Fairchild Semiconductor Corporation FESD05P30ZL Rev. 1.0.0 www.fairchildsemi.com 4 FESD05P30ZL — 5 V, 30 pF Unidirectional ESD Protector Physical Dimension TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 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