Advance
FLASH MEMORY
K9K8G08U1M
K9F4G08U0M
Document Title
512M x 8 Bits / 1G x 8 Bits NAND Flash Memory
Revision History
Revision No
0.0
History
Draft Date
Remark
1. Initial issue
Nov. 15. 2004
Advance
The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right
to change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions about device. If you have
any questions, please contact the SAMSUNG branch office near your office.
1
Advance
FLASH MEMORY
K9K8G08U1M
K9F4G08U0M
512M x 8 Bit / 1G x 8 Bits NAND Flash Memory
PRODUCT LIST
Part Number
Vcc Range
Organization
K9F4G08U0M-Y,P
K9F4G08U0M-I
PKG Type
TSOP1
2.70 ~ 3.60V
X8
52ULGA
K9K8G08U1M-I
FEATURES
• Fast Write Cycle Time
- Page Program time : 200µs(Typ.)
- Block Erase Time : 1.5ms(Typ.)
• Command/Address/Data Multiplexed I/O Port
• Hardware Data Protection
- Program/Erase Lockout During Power Transitions
• Reliable CMOS Floating-Gate Technology
- Endurance : 100K Program/Erase Cycles
- Data Retention : 10 Years
• Command Driven Operation
• Intelligent Copy-Back with internal 1bit/528Byte EDC
• Unique ID for Copyright Protection
• Package :
- K9F4G08U0M-YCB0/YIB0
48 - Pin TSOP I (12 x 20 / 0.5 mm pitch)
- K9F4G08U0M-PCB0/PIB0 : Pb-FREE PACKAGE
48 - Pin TSOP I (12 x 20 / 0.5 mm pitch)
- K9F4G08U0M-ICB0/IIB0
52 - Pin ULGA (12 x 17 / 1.00 mm pitch)
- K9K8G08U1M-ICB0/IIB0
52 - Pin ULGA (12 x 17 / 1.00 mm pitch)
• Voltage Supply
- 2.70V ~ 3.60V
• Organization
- Memory Cell Array : (512M + 16,384K)bit x 8bit
- Data Register : (2K + 64)bit x 8bit
• Automatic Program and Erase
- Page Program : (2K + 64)Byte
- Block Erase : (128K + 4K)Byte
• Page Read Operation
- Page Size : (2K + 64)Byte
- Random Read : 20µs(Max.)
- Serial Access : 25ns(Min.)
GENERAL DESCRIPTION
Offered in 512Mx8bit, the K9F4G08U0M is a 4G-bit NAND Flash Memory with spare 128M-bit. Its NAND cell provides the most costeffective solution for the solid state application market. A program operation can be performed in typical 200µs on the (2K+64)Byte
page and an erase operation can be performed in typical 1.5ms on a (128K+4K)Byte block. Data in the data page can be read out at
25ns cycle time per Byte. The I/O pins serve as the ports for address and data input/output as well as command input. The on-chip
write controller automates all program and erase functions including pulse repetition, where required, and internal verification and
margining of data. Even the write-intensive systems can take advantage of the K9F4G08U0M′s extended reliability of 100K program/
erase cycles by providing ECC(Error Correcting Code) with real time mapping-out algorithm. The K9F4G08U0M is an optimum solution for large nonvolatile storage applications such as solid state file storage and other portable applications requiring non-volatility.
2
Advance
FLASH MEMORY
K9K8G08U1M
K9F4G08U0M
PIN CONFIGURATION (TSOP1)
K9F4G08U0M-YCB0,PCB0/YIB0,PIB0
N.C
N.C
N.C
N.C
N.C
N.C
R/B
RE
CE
N.C
N.C
Vcc
Vss
N.C
N.C
CLE
ALE
WE
WP
N.C
N.C
N.C
N.C
N.C
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
48-pin TSOP1
Standard Type
12mm x 20mm
N.C
N.C
N.C
N.C
I/O7
I/O6
I/O5
I/O4
N.C
N.C
N.C
Vcc
Vss
N.C
N.C
N.C
I/O3
I/O2
I/O1
I/O0
N.C
N.C
N.C
N.C
48
47
46
45
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
PACKAGE DIMENSIONS
48-PIN LEAD/LEAD FREE PLASTIC THIN SMALL OUT-LINE PACKAGE TYPE(I)
48 - TSOP1 - 1220F
0.10
MAX
0.004
Unit :mm/Inch
#48
#24
#25
0.50
0.0197
12.40
0.488 MAX
( 0.25 )
0.010
#1
12.00
0.472
+0.003
0.008-0.001
0.20 -0.03
+0.07
20.00±0.20
0.787±0.008
+0.075
0~8°
0.45~0.75
0.018~0.030
+0.003
0.005-0.001
18.40±0.10
0.724±0.004
0.125 0.035
0.25
0.010 TYP
1.00±0.05
0.039±0.002
( 0.50 )
0.020
3
1.20
0.047MAX
0.05
0.002 MIN
Advance
FLASH MEMORY
K9K8G08U1M
K9F4G08U0M
PIN CONFIGURATION (ULGA)
K9F4G08U0M-ICB0/IIB0
A
NC
C
B
E
D
F
G
H
NC
NC
K
J
NC
L
M
N
NC
NC
7
NC
6
/RE
Vcc
NC
NC
NC
NC
Vss
Vcc
IO5
IO7
NC
NC
5
4
/CE
3
2
NC
CLE
NC
NC
ALE
NC
NC
/WP
NC
IO4
IO6
IO0
/WE
NC
Vss
1
R/B
NC
Vss
IO2
IO1
NC
NC
NC
NC
NC
NC
Vss
IO3
NC
NC
NC
NC
PACKAGE DIMENSIONS
52-ULGA (measured in millimeters)
Bottom View
Top View
12.00±0.10
10.00
1.00
1.00
2.00
7
(Datum A)
6
5
4
3
2
1
B
1.00
1.00
1.30
12.00±0.10
A
#A1
A
B
C
1.00
2.50
17.00±0.10
E
F
1.00
H
1.00
2.50
G
J
2.00
K
0.50
L
M
N
Side View
17.00±0.10
0.10 C
4
41-∅0.70±0.05
∅0.1
M C AB
0.65(Max.)
12-∅1.00±0.05
∅0.1 M C AB
12.00
17.00±0.10
D
(Datum B)
Advance
FLASH MEMORY
K9K8G08U1M
K9F4G08U0M
K9K8G08U1M-ICB0/IIB0
A
C
B
NC
E
D
G
F
H
NC
NC
L
K
J
M
N
NC
NC
NC
7
NC
6
/RE1
Vcc
R/B2
/RE2
IO7-2
Vss
IO6-2
Vcc
IO5-1
IO7-1
NC
IO5-2
5
4
/CE1
3
2
CLE1
/CE2
R/B1
CLE2
/WE1
ALE2
Vss
1
NC
NC
ALE1
NC
/WP2
IO0-1
/WP1
/WE2
IO4-1
IO6-1
IO0-2
Vss
IO2-1
IO1-1
NC
IO3-2
Vss
IO3-1
IO1-2
NC
IO4-2
NC
IO2-2
NC
NC
PACKAGE DIMENSIONS
52-ULGA (measured in millimeters)
Bottom View
Top View
12.00±0.10
10.00
1.00
1.00
2.00
7
(Datum A)
6
5
4
3
2
1
B
1.00
1.00
1.30
12.00±0.10
A
#A1
A
B
C
1.00
2.50
17.00±0.10
E
F
1.00
H
1.00
2.50
G
J
2.00
K
0.50
L
M
N
Side View
17.00±0.10
0.10 C
5
41-∅0.70±0.05
∅0.1
M C AB
0.65(Max.)
12-∅1.00±0.05
∅0.1 M C AB
12.00
17.00±0.10
D
(Datum B)
Advance
FLASH MEMORY
K9K8G08U1M
K9F4G08U0M
PIN DESCRIPTION
Pin Name
Pin Function
I/O0 ~ I/O7
DATA INPUTS/OUTPUTS
The I/O pins are used to input command, address and data, and to output data during read operations. The I/
O pins float to high-z when the chip is deselected or when the outputs are disabled.
CLE
COMMAND LATCH ENABLE
The CLE input controls the activating path for commands sent to the command register. When active high,
commands are latched into the command register through the I/O ports on the rising edge of the WE signal.
ALE
ADDRESS LATCH ENABLE
The ALE input controls the activating path for address to the internal address registers. Addresses are
latched on the rising edge of WE with ALE high.
CE
CHIP ENABLE
The CE input is the device selection control. When the device is in the Busy state, CE high is ignored, and
the device does not return to standby mode in program or erase operation.
RE
READ ENABLE
The RE input is the serial data-out control, and when active drives the data onto the I/O bus. Data is valid
tREA after the falling edge of RE which also increments the internal column address counter by one.
WE
WRITE ENABLE
The WE input controls writes to the I/O port. Commands, address and data are latched on the rising edge of
the WE pulse.
WP
WRITE PROTECT
The WP pin provides inadvertent program/erase protection during power transitions. The internal high voltage generator is reset when the WP pin is active low.
R/B
READY/BUSY OUTPUT
The R/B output indicates the status of the device operation. When low, it indicates that a program, erase or
random read operation is in process and returns to high state upon completion. It is an open drain output and
does not float to high-z condition when the chip is deselected or when outputs are disabled.
Vcc
POWER
VCC is the power supply for device.
Vss
GROUND
N.C
NO CONNECTION
Lead is not internally connected.
NOTE : Connect all VCC and VSS pins of each device to common power supply outputs.
Do not leave VCC or VSS disconnected.
6
Advance
FLASH MEMORY
K9K8G08U1M
K9F4G08U0M
Figure 1. K9F4G08U0M Functional Block Diagram
VCC
VSS
A12 - A29
X-Buffers
Latches
& Decoders
4,096M + 128M Bit
NAND Flash
ARRAY
A0 - A11
Y-Buffers
Latches
& Decoders
(2,048 + 64)Byte x 262,144
Data Register & S/A
Y-Gating
Command
Command
Register
CE
RE
WE
VCC
VSS
I/O Buffers & Latches
Control Logic
& High Voltage
Generator
Output
Driver
Global Buffers
I/0 0
I/0 7
CLE ALE WP
Figure 2. K9F4G08U0M Array Organization
1 Block = 64 Pages
(128K + 4k) Byte
1 Page = (2K + 64)Bytes
1 Block = (2K + 64)B x 64 Pages
= (128K + 4K) Bytes
1 Device = (2K+64)B x 64Pages x 4,096 Blocks
= 4,224 Mbits
256K Pages
(=4,096 Blocks)
8 bit
2K Bytes
64 Bytes
I/O 0 ~ I/O 7
Page Register
2K Bytes
64 Bytes
I/O 0
I/O 1
I/O 2
I/O 3
I/O 4
I/O 5
I/O 6
I/O 7
1st Cycle
A0
A1
A2
A3
A4
A5
A6
A7
2nd Cycle
A8
A9
A10
A11
*L
*L
*L
*L
Column Address
Column Address
3rd Cycle
A12
A13
A14
A15
A16
A17
A18
A19
Row Address
4th Cycle
A20
A21
A22
A23
A24
A25
A26
A27
Row Address
5th Cycle
A28
A29
*L
*L
*L
*L
*L
*L
Row Address
NOTE : Column Address : Starting Address of the Register.
* L must be set to "Low".
* The device ignores any additional input of address cycles than reguired.
7
Advance
FLASH MEMORY
K9K8G08U1M
K9F4G08U0M
Product Introduction
The K9F4G08U0M is a 4,224Mbit(4,429,185,024 bit) memory organized as 262,144 rows(pages) by 2,112x8 columns. Spare 64x8
columns are located from column address of 2,048~2,111. A 2,112-byte data register is connected to memory cell arrays accommodating data transfer between the I/O buffers and memory during page read and page program operations. The memory array is made
up of 32 cells that are serially connected to form a NAND structure. Each of the 32 cells resides in a different page. A block consists
of two NAND structured strings. A NAND structure consists of 32 cells. Total 1,081,344 NAND cells reside in a block. The program
and read operations are executed on a page basis, while the erase operation is executed on a block basis. The memory array consists of 4,096 separately erasable 128K-byte blocks. It indicates that the bit by bit erase operation is prohibited on the K9F4G08U0M.
The K9F4G08U0M has addresses multiplexed into 8 I/Os. This scheme dramatically reduces pin counts and allows system upgrades
to future densities by maintaining consistency in system board design. Command, address and data are all written through I/O's by
bringing WE to low while CE is low. Those are latched on the rising edge of WE. Command Latch Enable(CLE) and Address Latch
Enable(ALE) are used to multiplex command and address respectively, via the I/O pins. Some commands require one bus cycle. For
example, Reset Command, Status Read Command, etc require just one cycle bus. Some other commands, like page read and block
erase and page program, require two cycles: one cycle for setup and the other cycle for execution. The 528M byte physical space
requires 30 addresses, thereby requiring five cycles for addressing : 2 cycles of column address, 3 cycles of row address, in that
order. Page Read and Page Program need the same five address cycles following the required command input. In Block Erase operation, however, only the three row address cycles are used. Device operations are selected by writing specific commands into the
command register. Table 1 defines the specific commands of the K9F4G08U0M.
In addition to the enhanced architecture and interface, the device incorporates copy-back program feature from one page to another
page without need for transporting the data to and from the external buffer memory. Since the time-consuming serial access and
data-input cycles are removed, system performance for solid-state disk application is significantly increased.
Table 1. Command Sets
Function
1st. Cycle
2nd. Cycle
Read
00h
30h
Read for Copy Back
00h
35h
Read ID
90h
-
Reset
FFh
-
Page Program
80h
10h
80h---11h
81h---10h
85h
10h
85h---11h
81h---10h
60h
D0h
60h---60h
D0h
85h
-
05h
E0h
Two-Plane Page Program
Copy-Back Program
Two-Plane Copy-Back Program
Block Erase
Two-Plane Block Erase
Random Data Input(1)
Random Data Output
Read Status
Read EDC Status
(2)
(1)
Acceptable Command during Busy
O
70h
O
7Bh
O
NOTE : 1. Random Data Input/Output can be executed in a page.
2. Read EDC Status is only available on Copy Back operation.
Caution : Any undefined command inputs are prohibited except for above command set of Table 1.
8
Advance
FLASH MEMORY
K9K8G08U1M
K9F4G08U0M
ABSOLUTE MAXIMUM RATINGS
Parameter
Voltage on any pin relative to VSS
Temperature Under Bias
Storage Temperature
K9F4G08U0M-XCB0
Symbol
Rating
VIN/OUT
-0.6 to +4.6
VCC/VCCQ
-0.6 to +4.6
K9F4G08U0M-XCB0
K9F4G08U0M-XIB0
V
-10 to +125
TBIAS
K9F4G08U0M-XIB0
Unit
°C
-40 to +125
TSTG
-65 to +150
°C
IOS
5
mA
Short Circuit Current
NOTE :
1. Minimum DC voltage is -0.6V on input/output pins. During transitions, this level may undershoot to -2.0V for periods <30ns.
Maximum DC voltage on input/output pins is VCC+0.3V which, during transitions, may overshoot to VCC+2.0V for periods <20ns.
2. Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded. Functional operation should be restricted to the conditions
as detailed in the operational sections of this data sheet. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
RECOMMENDED OPERATING CONDITIONS
(Voltage reference to GND, K9F4G08U0M-XCB0 :TA=0 to 70°C, K9F4G08U0M-XIB0:TA=-40 to 85°C)
Parameter
Unit
Symbol
Min
Typ.
Max
Supply Voltage
VCC
2.7
3.3
3.6
V
Supply Voltage
VSS
0
0
0
V
DC AND OPERATING CHARACTERISTICS(Recommended operating conditions otherwise noted.)
Parameter
Page Read with
Operating Serial Access
Current
Program
Erase
Symbol
ICC1
Test Conditions
Min
Typ
Max
-
15
30
-
-
1
ICC2
-
ICC3
-
Stand-by Current(TTL)
ISB1
CE=VIH, WP=0V/VCC
Stand-by Current(CMOS)
ISB2
CE=VCC-0.2, WP=0V/VCC
-
10
50
ILI
VIN=0 to Vcc(max)
-
-
±10
Output Leakage Current
ILO
VOUT=0 to Vcc(max)
Input High Voltage
VIH*
Input Leakage Current
Unit
tRC=25ns
CE=VIL, IOUT=0mA
-
-
±10
-
0.8xVcc
-
Vcc+0.3
-
-0.3
-
0.2xVcc
2.4
-
-
Input Low Voltage, All inputs
VIL*
Output High Voltage Level
VOH
K9F4G08U0M :IOH=-400µA
Output Low Voltage Level
VOL
K9F4G08U0M :IOL=2.1mA
-
-
0.4
Output Low Current(R/B)
IOL(R/B)
K9F4G08U0M :VOL=0.4V
8
10
-
NOTE : 1. VIL can undershoot to -0.4V and VIH can overshoot to VCC +0.4V for durations of 20 ns or less.
2. Typical value is measured at Vcc=3.3V, TA=25°C. Not 100% tested.
9
mA
µA
V
mA
Advance
FLASH MEMORY
K9K8G08U1M
K9F4G08U0M
VALID BLOCK
Symbol
Min
Typ.
Max
Unit
K9F4G08U0M
Parameter
NVB
4,016
-
4,096
Blocks
K9K8G08U1M
NVB
8,032*
-
8,192*
Blocks
NOTE :
1. The device may include invalid blocks when first shipped. Additional invalid blocks may develop while being used. The number of valid blocks is presented with both cases of invalid blocks considered. Invalid blocks are defined as blocks that contain one or more bad bits. Do not erase or program
factory-marked bad blocks. Refer to the attached technical notes for appropriate management of invalid blocks.
2. The 1st block, which is placed on 00h block address, is guaranteed to be a valid block, does not require Error Correction up to 1K program/erase
cycles.
* : Each K9F4G08U0M chip in the K9K8G08U1M has Maximun 80 invalid block.
AC TEST CONDITION
(K9F4G08U0M-XCB0 :TA=0 to 70°C, K9F4G08U0M-XIB0:TA=-40 to 85°C
K9F4G08U0M : Vcc=2.7V~3.6V unless otherwise noted)
Parameter
K9F4G08U0M
Input Pulse Levels
0V to Vcc
Input Rise and Fall Times
5ns
Input and Output Timing Levels
Vcc/2
Output Load
1 TTL GATE and CL=50pF
CAPACITANCE(TA=25°C, VCC=3.3V, f=1.0MHz)
Item
Symbol
Test Condition
Min
Max
Unit
Input/Output Capacitance
CI/O
VIL=0V
-
10
pF
Input Capacitance
CIN
VIN=0V
-
10
pF
NOTE : Capacitance is periodically sampled and not 100% tested.
MODE SELECTION
CLE
ALE
CE
H
L
WE
RE
WP
L
H
X
Mode
Read Mode
L
H
L
H
X
H
L
L
H
H
L
H
L
H
H
L
L
L
H
H
Data Input
Write Mode
Command Input
Address Input(5clock)
Command Input
Address Input(5clock)
L
L
L
H
X
Data Output
X
X
X
X
H
X
During Read(Busy)
X
X
X
X
X
H
During Program(Busy)
X
X
X
X
X
H
During Erase(Busy)
L
X
X
X
(1)
X
X
X
X
H
X
X
0V/VCC
NOTE : 1. X can be VIL or VIH.
2. WP should be biased to CMOS high or CMOS low for standby.
10
Write Protect
(2)
Stand-by
Advance
FLASH MEMORY
K9K8G08U1M
K9F4G08U0M
Program / Erase Characteristics
Parameter
Program Time
Symbol
Min
Typ
Max
Unit
tPROG(2)
-
200
700
µs
tDBSY
-
0.5
1
µs
-
-
4
cycles
-
-
4
cycles
-
1.5
2
ms
Dummy Busy Time for Two-Plane Page Program
Number of Partial Program Cycles
in the Same Page
Main Array
Nop
Spare Array
Block Erase Time
tBERS
NOTE : 1. Typical value is measured at Vcc=3.3V, TA=25°C. Not 100% tested.
2. Typical program time is defined as the time that more than 50% of the whole pages are programmed at Vcc of 3.3V and temperature of 25°C
within.
AC Timing Characteristics for Command / Address / Data Input
Parameter
CLE Setup Time
Symbol
Min
Max
Unit
12
-
ns
CLE Hold Time
tCLH
5
-
ns
CE Setup Time
t
CS(1)
20
-
ns
tCH
5
-
ns
WE Pulse Width
tWP
12
-
ns
ALE Setup Time
tALS(1)
12
-
ns
CE Hold Time
tCLS
(1)
ALE Hold Time
tALH
5
-
ns
Data Setup Time
tDS(1)
12
-
ns
Data Hold Time
tDH
5
-
ns
Write Cycle Time
tWC
25
-
ns
tWH
10
-
ns
tADL(2)
70
-
ns
WE High Hold Time
ALE to Data Loading Time
NOTES : 1. The transition of the corresponding control pins must occur only once while WE is held low
2. tADL is the time from the WE rising edge of final address cycle to the WE rising edge of first data cycle
11
Advance
FLASH MEMORY
K9K8G08U1M
K9F4G08U0M
AC Characteristics for Operation
Parameter
Symbol
Min
Max
Unit
Data Transfer from Cell to Register
tR
-
20
µs
ALE to RE Delay
tAR
10
-
ns
CLE to RE Delay
tCLR
10
-
ns
Ready to RE Low
tRR
20
-
ns
RE Pulse Width
tRP
12
-
ns
WE High to Busy
tWB
-
100
ns
Read Cycle Time
tRC
25
-
ns
RE Access Time
tREA
-
18
ns
CE Access Time
tCEA
-
23
ns
RE High to Output Hi-Z
tRHZ
-
100
ns
CE High to Output Hi-Z
tCHZ
-
30
ns
RE High to Output Hold
tRHOH
15
-
ns
RE Low to Output Hold
tRLOH
5
-
ns
CE High to Output Hold
tCOH
15
-
ns
RE High Hold Time
tREH
10
-
ns
tIR
0
-
ns
ns
Output Hi-Z to RE Low
RE High to WE Low
tRHW
100
-
WE High to RE Low
tWHR
60
-
Device Resetting Time(Read/Program/Copy-Back Program/Erase)
tRST
-
NOTE: 1. If reset command(FFh) is written at Ready state, the device goes into Busy for maximum 5us.
12
5/10/40/500
ns
(1)
µs
Advance
FLASH MEMORY
K9K8G08U1M
K9F4G08U0M
NAND Flash Technical Notes
Initial Invalid Block(s)
Initial invalid blocks are defined as blocks that contain one or more initial invalid bits whose reliability is not guaranteed by Samsung.
The information regarding the initial invalid block(s) is called the initial invalid block information. Devices with initial invalid block(s)
have the same quality level as devices with all valid blocks and have the same AC and DC characteristics. An initial invalid block(s)
does not affect the performance of valid block(s) because it is isolated from the bit line and the common source line by a select transistor. The system design must be able to mask out the initial invalid block(s) via address mapping. The 1st block, which is placed on
00h block address, is guaranteed to be a valid block, does not require Error Correction up to 1K program/erase cycles.
Identifying Initial Invalid Block(s)
All device locations are erased(FFh) except locations where the initial invalid block(s) information is written prior to shipping. The initial invalid block(s) status is defined by the 1st byte in the spare area. Samsung makes sure that either the 1st or 2nd page of every
initial invalid block has non-FFh data at the column address of 2048. Since the initial invalid block information is also erasable in
most cases, it is impossible to recover the information once it has been erased. Therefore, the system must be able to recognize the
initial invalid block(s) based on the original initial invalid block information and create the initial invalid block table via the following
suggested flow chart(Figure 3). Any intentional erasure of the original initial invalid block information is prohibited.
Start
Set Block Address = 0
Increment Block Address
*
Create (or update)
Initial
Invalid Block(s) Table
No
Check "FFh" at the column address 2048
of the 1st and 2nd page in the block
Check "FFh"
Yes
No
Last Block ?
Yes
End
Figure 3. Flow chart to create initial invalid block table
13
Advance
FLASH MEMORY
K9K8G08U1M
K9F4G08U0M
NAND Flash Technical Notes (Continued)
Error in write or read operation
Within its life time, additional invalid blocks may develop with NAND Flash memory. Refer to the qualification report for the actual
data.The following possible failure modes should be considered to implement a highly reliable system. In the case of status read failure after erase or program, block replacement should be done. Because program status fail during a page program does not affect
the data of the other pages in the same block, block replacement can be executed with a page-sized buffer by finding an erased
empty block and reprogramming the current target data and copying the rest of the replaced block. In case of Read, ECC must be
employed. To improve the efficiency of memory space, it is recommended that the read or verification failure due to single bit error be
reclaimed by ECC without any block replacement. The said additional block failure rate does not include those reclaimed blocks.
Failure Mode
Write
Read
ECC
Detection and Countermeasure sequence
Erase Failure
Status Read after Erase --> Block Replacement
Program Failure
Status Read after Program --> Block Replacement
Single Bit Failure
Verify ECC -> ECC Correction
: Error Correcting Code --> Hamming Code etc.
Example) 1bit correction & 2bit detection
Program Flow Chart
Start
Write 80h
Write Address
Write Data
Write 10h
Read Status Register
I/O 6 = 1 ?
or R/B = 1 ?
*
Program Error
No
Yes
No
I/O 0 = 0 ?
Yes
Program Completed
*
14
: If program operation results in an error, map out
the block including the page in error and copy the
target data to another block.
Advance
FLASH MEMORY
K9K8G08U1M
K9F4G08U0M
NAND Flash Technical Notes (Continued)
Erase Flow Chart
Read Flow Chart
Start
Start
Write 60h
Write 00h
Write Block Address
Write Address
Write D0h
Write 30h
Read Status Register
Read Data
ECC Generation
No
I/O 6 = 1 ?
or R/B = 1 ?
Reclaim the Error
Yes
*
No
Erase Error
No
Verify ECC
Yes
I/O 0 = 0 ?
Page Read Completed
Yes
Erase Completed
*
: If erase operation results in an error, map out
the failing block and replace it with another block.
Block Replacement
1st
∼
(n-1)th
nth
{
Block A
1
an error occurs.
(page)
1st
∼
(n-1)th
nth
Buffer memory of the controller.
{
Block B
2
(page)
* Step1
When an error happens in the nth page of the Block ’A’ during erase or program operation.
* Step2
Copy the data in the 1st ~ (n-1)th page to the same location of another free block. (Block ’B’)
* Step3
Then, copy the nth page data of the Block ’A’ in the buffer memory to the nth page of the Block ’B’.
* Step4
Do not erase or program to Block ’A’ by creating an ’invalid block’ table or other appropriate scheme.
15
Advance
FLASH MEMORY
K9K8G08U1M
K9F4G08U0M
NAND Flash Technical Notes (Continued)
Copy-Back Operation with EDC & Plane Definition for EDC
Generally, copy-back program is very powerful to move data stored in a page without utilizing any external memory. But, if the source
page has a bit error for charge loss or charge gain, accumulated copy-back operations could also accumulate bit errors. For this reason, two-bit ECC is recommanded for copy-back operation.
Because K9F4G08U0M supports Copy Back with EDC operation, only 1-bit ECC is sufficient for copy-back operation. During CopyBack operation, the system controller can detect a bit error for each 528-byte plane by monitoring the Status bits (I/O1 & I/O 2) of the
Status Register.
There are some restrictions against programming unit in copy-back operation with EDC. For enabling EDC operation, the page program should be performed with the whole page unit (2,112-byte) or the each 528-byte plane unit. A page of 2,112-byte is composed
of 4 planes of 528-byte and each 528-byte plane is made up of 512-byte in the main area and 16-byte in the spare area.
Spare Area (64 Byte)
Main Area (2,048 Byte)
"A" area
(1’st plane)
"B" area
(2’nd plane)
"C" area
(3’rd plane)
"D" area
(4’th plane)
512 Byte
512 Byte
512 Byte
512 Byte
"E" area
"F" area
"G" area
"H" area
(1’st plane) (2’nd plane) (3’rd plane) (4’th plane)
16 Byte
16 Byte
16 Byte
16 Byte
Table 2. Definition of the 528-Byte Plane
Main Area (Column 0~2,047)
Plane
Area Name
Spare Area (Column 2,048~2,111)
Column Address
Area Name
Column Address
1’st 528-Byte Plane
"A"
0 ~ 511
"E"
2,048 ~ 2,063
2’nd 528-Byte Plane
"B"
512 ~ 1,023
"F"
2,064 ~ 2,079
3’rd 528-Byte Plane
"C"
1,024 ~ 1,535
"G"
2,080 ~ 2,095
4’th 528-Byte Plane
"D"
1,536 ~ 2,047
"H"
2,096 ~ 2,111
Addressing for program operation
Within a block, the pages must be programmed consecutively from the LSB (least significant bit) page of the block to MSB (most significant bit) pages of the block. Random page address programming is prohibited.
Page 63
(64)
Page 63
:
Page 31
:
(32)
Page 31
:
Page 2
Page 1
Page 0
(1)
:
(3)
(2)
(1)
Page 2
Page 1
Page 0
Data register
(3)
(32)
(2)
Data register
From the LSB page to MSB page
DATA IN: Data (1)
(64)
Ex.) Random page program (Prohibition)
Data (64)
DATA IN: Data (1)
16
Data (64)
Advance
FLASH MEMORY
K9K8G08U1M
K9F4G08U0M
System Interface Using CE don’t-care.
For an easier system interface, CE may be inactive during the data-loading or serial access as shown below. The internal 2,112byte
data registers are utilized as separate buffers for this operation and the system design gets more flexible. In addition, for voice or
audio applications which use slow cycle time on the order of u-seconds, de-activating CE during the data-loading and serial access
would provide significant savings in power consumption.
≈
≈
CLE
≈
Figure 4. Program Operation with CE don’t-care.
I/Ox
≈
ALE
80h
Address(5Cycles)
tCS
≈
≈≈
WE
≈ ≈
≈
CE
≈ ≈
CE don’t-care
Data Input
tCH
Data Input
10h
tCEA
CE
CE
tREA
tWP
RE
WE
I/O0~7
out
≈
CLE
≈
Figure 5. Read Operation with CE don’t-care.
CE don’t-care
≈
ALE
tR
≈
R/B
≈≈
≈ ≈ ≈
RE
≈
WE
I/Ox
≈ ≈
CE
00h
Address(5Cycle)
Data Output(serial access)
30h
17
Advance
FLASH MEMORY
K9K8G08U1M
K9F4G08U0M
NOTE
Device
K9F4G08U0M
I/O
DATA
ADDRESS
I/Ox
Data In/Out
Col. Add1
Col. Add2
Row Add1
Row Add2
Row Add3
I/O 0 ~ I/O 7
2,112byte
A0~A7
A8~A11
A12~A19
A20~A27
A28~A29
Command Latch Cycle
CLE
tCLS
tCLH
tCS
tCH
CE
tWP
WE
tALH
tALS
ALE
tDH
tDS
I/Ox
Command
Address Latch Cycle
tCLS
CLE
tCS
tWC
tWC
tWC
tWC
CE
tWP
tWP
WE
tWH
tALH
tALS
tALS
tWP
tWP
tALH
tWH
tALS
tWH
tALH
tALS
tWH
tALH
tALS
tALH
ALE
tDS
I/Ox
tDH
Col. Add1
tDS
tDH
Col. Add2
18
tDS
tDH
Row Add1
tDS
tDH
Row Add2
tDS
tDH
Row Add3
Advance
FLASH MEMORY
K9K8G08U1M
K9F4G08U0M
Input Data Latch Cycle
tCLH
≈
CLE
tCH
≈
CE
tWC
≈
ALE
tALS
tWP
tWH
tDH
tDS
tDH
tDS
tDH
≈
tDS
tWP
≈
tWP
WE
I/Ox
DIN final*
DIN 1
≈
DIN 0
NOTES : DIN final means 2,112
* Serial Access Cycle after Read(CLE=L, WE=H, ALE=L)
tRC
≈
CE
tREA
tREA
≈
tREH
tCHZ
tREA
tCOH
RE
tRHZ
tRHZ
I/Ox
Dout
Dout
≈
tRHOH
≈
tRR
R/B
NOTES : Transition is measured ±200mV from steady state voltage with load.
This parameter is sampled and not 100% tested.
tRLOH is valid when frequency is higher than 33MHz.
tRHOH starts to be valid when frequency is lower than 33MHz.
19
Dout
Advance
FLASH MEMORY
K9K8G08U1M
K9F4G08U0M
Serial Access Cycle after Read(EDO Type, CLE=L, WE=H, ALE=L)
≈
CE
tRC
tCHZ
tCOH
tREH
≈
tRP
RE
tCEA
I/Ox
tRHZ
tREA
tRHOH
tRLOH
≈
tREA
Dout
≈
Dout
≈
tRR
R/B
NOTES : Transition is measured ±200mV from steady state voltage with load.
This parameter is sampled and not 100% tested.
tRLOH is valid when frequency is higher than 33MHz.
tRHOH starts to be valid when frequency is lower than 33MHz.
Status Read Cycle & EDC Status Read Cycle
tCLR
CLE
tCLS
tCLH
tCS
CE
tWP
tCH
WE
tCEA
tCHZ
tCOH
tWHR
RE
tDS
I/Ox
tDH
tIR
tREA
tRHZ
tRHOH
Status Output
70h or 7Bh
20
Advance
FLASH MEMORY
K9K8G08U1M
K9F4G08U0M
Read Operation
tCLR
CLE
CE
tWC
WE
tWB
tAR
ALE
tR
tRHZ
tRC
≈
RE
I/Ox
00h
Col. Add1
Col. Add2
Row Add1
Column Address
Row Add2 Row Add3
30h
Dout N
Dout N+1
Row Address
≈ ≈
tRR
Busy
R/B
Read Operation(Intercepted by CE)
CLE
CE
WE
tWB
tCHZ
tCOH
tAR
ALE
tRC
tR
RE
tRR
I/Ox
00h
Col. Add1
Col. Add2
Column Address
Row Add1
Row Add2 Row Add3
Dout N
30h
Row Address
Busy
R/B
21
Dout N+1
Dout N+2
Dout M
22
R/B
I/Ox
RE
ALE
WE
CE
CLE
00h
Col. Add2
Column Address
Col. Add1
Random Data Output In a Page
Row Add2 Row Add3
Row Address
Row Add1
30h
Busy
tRR
tR
tWB
tAR
Dout N
tRC
Dout N+1
tRHW
05h
Col Add1
Col Add2
Column Address
E0h
tWHR
tCLR
Dout M
tREA
Dout M+1
K9K8G08U1M
K9F4G08U0M
Advance
FLASH MEMORY
Advance
FLASH MEMORY
K9K8G08U1M
K9F4G08U0M
Page Program Operation
CLE
CE
tWC
≈
tWC
tWC
WE
tWB
tADL
tPROG
ALE
I/Ox
80h
Co.l Add1 Col. Add2
SerialData
Column Address
Input Command
Row Add1
≈ ≈
RE
Din
Din
N
M
1 up to m Byte
Serial Input
Row Add2 Row Add3
Row Address
70h
I/O0=0 Successful Program
I/O0=1 Error in Program
NOTES : tADL is the time from the WE rising edge of final address cycle to the WE rising edge of first data cycle.
23
I/O0
Read Status
Command
≈
R/B
10h
Program
Command
24
R/B
I/Ox
RE
ALE
WE
Col. Add1
Col. Add2
Row Add2 Row Add3
Row Address
Row Add1
tWC
tADL
Din
M
85h
Col. Add1
Col. Add2
Serial Input Random Data Column Address
Input Command
Din
N
tWC
tADL
Din
K
Serial Input
Din
J
NOTES : 1. tADL is the time from the WE rising edge of final address cycle to the WE rising edge of first data cycle.
2. For EDC operation, only one time random data input is possible at the same address.
Serial Data
Column Address
Input Command
80h
tWC
≈
≈ ≈
CE
≈
≈ ≈
CLE
10h
Program
Command
tWB
tPROG
≈
Page Program Operation with Random Data Input
70h
Read Status
Command
I/O0
K9K8G08U1M
K9F4G08U0M
Advance
FLASH MEMORY
25
R/B
I/Ox
RE
ALE
WE
CE
Column Address
Row Address
Col Add1 Col Add2 Row Add1 Row Add2 Row Add3
35h
tR
tWB
Column Address
Row Address
Col Add1 Col Add2 Row Add1 Row Add2 Row Add3
Copy-Back Data
Input Command
Busy
85h
Data 1
tADL
NOTES : 1. tADL is the time from the WE rising edge of final address cycle to the WE rising edge of first data cycle.
2. For EDC operation, only one time random data input is possible at hte same address.
00h
tWC
≈
CLE
Data N
10h
tWB
7Bh/70h
I/Ox
Read EDC Status
or Read Status Command
tPROG
I/O0=0 Successful Program
I/O0=1 Error in Program
I/O1 ~ I/O2 : EDC Status (7Bh only)
Busy
≈
Copy-Back Program Operation With Random Data Input
K9K8G08U1M
K9F4G08U0M
Advance
FLASH MEMORY
≈ ≈
Advance
FLASH MEMORY
K9K8G08U1M
K9F4G08U0M
BLOCK ERASE OPERATION
CLE
CE
tWC
WE
tBERS
tWB
ALE
RE
I/Ox
60h
Row Add1
Row Add2 Row Add3
D0h
70h
I/O 0
Busy
R/B
Auto Block Erase
Setup Command
Erase Command
≈
Row Address
Read Status
Command
26
I/O0=0 Successful Erase
I/O0=1 Error in Erase
27
R/B
I/Ox
RE
ALE
WE
Din
N
≈
≈ ≈
Din
M
I/O0~7
80h
tDBSY
tDBSY :
Address & Data Input
A0 ~ A11 : Valid
A12 ~ A17 : Valid
: Fixed ’High’
A18
A19 ~ A29 : Valid
81h
Din
N
A0 ~ A11 : Valid
A12 ~ A17 : Fixed ’Low’
: Fixed ’Low’
A18
A19 ~ A29 : Fixed ’Low’
tDBSY
Col Add1 Col Add2 Row Add1 Row Add2 Row Add3
Col Add1,2 & Row Add 1,2,3
2112 Byte Data
11h
typ. 500ns
max. 1µs
81h
Col Add1,2 & Row Add 1,2,3
2112 Byte Data
Address & Data Input
Ex.) Two-Plane Page Program
R/B
tWB
11h
Program
Page Row Address 1 up to 2112 Byte Data Command
(Dummy)
Serial Input
Col Add1 Col Add2 Row Add1 Row Add2 Row Add3
Serial Data Column Address
Input Command
80h
tWC
≈
CE
≈
≈ ≈
CLE
10h
tPROG
Program Confirm
Command
(True)
10h
Din
M
tWB tPROG
≈
Two-Plane Page Program Operation
70h
I/O
70h
Read Status Command
K9K8G08U1M
K9F4G08U0M
Advance
FLASH MEMORY
Advance
FLASH MEMORY
K9K8G08U1M
K9F4G08U0M
Two-Plane Block Erase Operation
CLE
CE
tWC
WE
tWB
tBERS
ALE
RE
I/OX
60h
Row Add1 Row Add2 Row Add3
D0h
70h
I/O 0
Row Address
Busy
R/B
Block Erase Setup Command
I/O 0 = 0 Successful Erase
I/O 1 =1 Error in Erase
Erase Confirm Command
Read Status Command
2 times repeat
* For Two-Plane Erase operation, Block address to be erased should be repeated before "D0H" command.
Ex.) Two-Plane Block Erase Operation
R/B
I/O0~7
tBERS
60h
Address
60h
D0h
~ A25
A9Address
Row Add1,2,3
Row Add1,2,3
A12 ~ A17 : Fixed ’Low’
:Fixed ’Low’
A18
A19 ~ A29 : Fixed ’Low’
A12 ~ A17 : Fixed ’Low’
: Fixed ’High’
A18
A19 ~ A29 : valid
D0h
28
70h
Advance
FLASH MEMORY
K9K8G08U1M
K9F4G08U0M
Read ID Operation
CLE
CE
WE
tAR
ALE
RE
tREA
I/Ox
90h
Read ID Command
00h
Address 1cycle
Device
Device Code*(2nd Cycle)
K9F4G08U0M
DCh
K9K8G08U1M
ECh
Device
Code*
3rd cyc.*
4th cyc.*
Maker Code Device Code
3rd Cycle*
4th Cycle*
10h
95h
Same as each K9F4G08U0M in it
29
Advance
FLASH MEMORY
K9K8G08U1M
K9F4G08U0M
ID Definition Table
90 ID : Access command = 90H
Description
1 Byte
2nd Byte
3rd Byte
4th Byte
st
Maker Code
Device Code
Internal Chip Number, Cell Type, Number of Simultaneously Programed Pages, Etc
Page Size, Block Size,Redundant Area Size, Organization, Serial Access Minimum
3rd ID Data
Description
I/O7
I/O6
I/O5 I/O4
I/O3 I/O2
I/O1 I/O0
0
0
1
1
Internal Chip Number
1
2
4
8
Cell Type
2 Level Cell
4 Level Cell
8 Level Cell
16 Level Cell
Number of
Simultaneously
Programmed Pages
1
2
4
8
Interleave Program
Between multiple chips
Not Support
Support
Cache Program
Not Support
Support
0
0
1
1
0
0
1
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
4th ID Data
Description
Page Size
(w/o redundant area )
1KB
2KB
Reserved
Reserved
Block Size
(w/o redundant area )
64KB
128KB
256KB
Reserved
Redundant Area Size
( byte/512byte)
8
16
Organization
x8
x16
Serial AccessMinimum
50ns
25ns
Reserved
Reserved
I/O7
I/O6
I/O5 I/O4
I/O3
I/O2
I/O1 I/O0
0
0
1
1
0
0
1
1
0
1
0
1
0
1
0
1
0
1
0
1
30
0
0
1
1
0
1
0
1
Advance
FLASH MEMORY
K9K8G08U1M
K9F4G08U0M
Device Operation
PAGE READ
Read mode is initiated by writing 00h-30h to the command register along with five address cycles. In two consecutive read operations, the second one doesn’t need 00h command, which five address cycles and 30h command initiates that operation. Once the
command is latched, it does not need to be written for the following page read operation. Two types of operations are available : random read out, serial page read out.
The random read mode is enabled when the page address is changed. The 2,112 bytes of data within the selected page are transferred to the data registers in less than 20µs(tR). The system controller can detect the completion of this data transfer(tR) by analyzing
the output of R/B pin. Once the data in a page is loaded into the data registers, they may be read out in 25ns cycle time by sequentially pulsing RE. The repetitive high to low transitions of the RE clock make the device output the data starting from the selected column address up to the last column address.
The device may output random data in a page instead of the consecutive sequential data by writing random data output command.
The column address of next data, which is going to be out, may be changed to the address which follows random data output command. Random data output can be operated multiple times regardless of how many times it is done in a page.
Figure 6. Read Operation
≈
CLE
≈
CE
≈≈
WE
≈
ALE
RE
I/Ox
tR
≈
R/B
00h
Address(5Cycle)
Data Output(Serial Access)
30h
Col. Add.1,2 & Row Add.1,2,3
Data Field
Spare Field
31
Advance
FLASH MEMORY
K9K8G08U1M
K9F4G08U0M
Figure 7. Random Data Output In a Page
tR
R/B
RE
I/Ox
Address
5Cycles
00h
Data Output
30h
05h
Col. Add.1,2 & Row Add.1,2,3
Address
2Cycles
E0h
Data Output
Col. Add.1,2
Data Field
Data Field
Spare Field
Spare Field
PAGE PROGRAM
The device is programmed basically on a page basis, but it does allow multiple partial page programing of a word or consecutive
bytes up to 2,112, in a single page program cycle. The number of consecutive partial page programming operation within the same
page without an intervening erase operation must not exceed 4 times for main array(1time/512byte) and 4 times for spare
array(1time/16byte). The addressing should be done in sequential order in a block. A page program cycle consists of a serial data
loading period in which up to 2,112bytes of data may be loaded into the data register, followed by a non-volatile programming period
where the loaded data is programmed into the appropriate cell.
The serial data loading period begins by inputting the Serial Data Input command(80h), followed by the five cycle address inputs and
then serial data loading. The words other than those to be programmed do not need to be loaded. The device supports random data
input in a page. The column address for the next data, which will be entered, may be changed to the address which follows random
data input command(85h). Random data input may be operated multiple times regardless of how many times it is done in a page.
The Page Program confirm command(10h) initiates the programming process. Writing 10h alone without previously entering the
serial data will not initiate the programming process. The internal write state controller automatically executes the algorithms and timings necessary for program and verify, thereby freeing the system controller for other tasks. Once the program process starts, the
Read Status Register command may be entered to read the status register. The system controller can detect the completion of a program cycle by monitoring the R/B output, or the Status bit(I/O 6) of the Status Register. Only the Read Status command and Reset
command are valid while programming is in progress. When the Page Program is complete, the Write Status Bit(I/O 0) may be
checked(Figure 8). The internal write verify detects only errors for "1"s that are not successfully programmed to "0"s. The command
register remains in Read Status command mode until another valid command is written to the command register.
Figure 8. Program & Read Status Operation
tPROG
R/B
"0"
I/Ox
80h
Address & Data Input
10h
70h
Pass
I/O0
Col. Add.1,2 & Row Add.1,2,3
"1"
Data
Fail
32
Advance
FLASH MEMORY
K9K8G08U1M
K9F4G08U0M
Figure 9. Random Data Input In a Page
tPROG
R/B
I/Ox
Address & Data Input
80h
85h
Address & Data Input
10h
70h
Pass
I/O0
Col. Add.1,2
Data
Col. Add.1,2 & Row Add1,2,3
Data
Fail
Copy-Back Program
The Copy-Back program is configured to quickly and efficiently rewrite data stored in one page without utilizing an external memory.
Since the time-consuming cycles of serial access and re-loading cycles are removed, the system performance is improved. The benefit is especially obvious when a portion of a block is updated and the rest of the block also need to be copied to the newly assigned
free block. The operation for performing a copy-back program is a sequential execution of page-read without serial access and copying-program with the address of destination page. A read operation with "35h" command and the address of the source page moves
the whole 2,112-byte data into the internal data buffer. As soon as the device returns to Ready state, Page-Copy Data-input command (85h) with the address cycles of destination page followed may be written. The Program Confirm command (10h) is required to
actually begin the programming operation. During tPROG, the device executes EDC of itself. Once the program process starts, the
Read Status Register command (70h) or Read EDC Status command (7Bh) may be entered to read the status register. The system
controller can detect the completion of a program cycle by monitoring the R/B output, or the Status bit(I/O 6) of the Status Register.
When the Copy-Back Program is complete, the Write Status Bit(I/O 0) and EDC Status Bits (I/O 1 ~ I/O 4) may be checked(Figure 10
& Figure 11& Figure 12). The internal write verification detects only errors for "1"s that are not successfully programmed to "0"s and
the internal EDC checks whether there is only 1-bit error for each 528-byte plane of the source page. More than 2-bit error detection
is not available for each 528-byte plane. The command register remains in Read Status command mode or Read EDC Status command mode until another valid command is written to the command register.
During copy-back program, data modification is possible using random data input command (85h) as shown in Figure11. But EDC
status Bits are not available during copy back for some bits or bytes modified by Random Data Input operation.
However, in case of the 528 byte plane unit modification, EDC status bits are abailable.
Figure 10. Page Copy-Back program Operation
tR
R/B
I/Ox
00h
Add.(5Cycles)
35h
tPROG
85h
Add.(5Cycles)
10h
Col. Add.1,2 & Row Add.1,2,3
Destination Address
Col. Add.1,2 & Row Add.1,2,3
Source Address
"0"
I/O0
70h
Pass
"1"
Fail
Note: 1. Copy-Back Program operation is allowed only within the same memory plane.
2. On the same plane, It’s prohibited to operate copy-back program from an odd address page(source page) to an even
address page(target page) or from an even address page(source page) to an odd address page(target page).
Therefore, the copy-back program is permitted just between odd address pages or even address pages.
Figure 11. Page Copy-Back program Operation with Random Data Input
R/B
I/Ox
tPROG
tR
00h
Add.(5Cycles)
35h
Col. Add.1,2 & Row Add.1,2,3
Source Address
85h
Add.(5Cycles)
Data
Col. Add.1,2 & Row Add.1,2,3
Destination Address
85h
Add.(2Cycles)
Data
Col. Add.1,2
There is no limitation for the number of repetition.
Note: 1. For EDC operation, only one time random data input is possible at the same address.
33
10h
70h
Advance
FLASH MEMORY
K9K8G08U1M
K9F4G08U0M
EDC OPERATION
Note that the user who use Copy-Back with EDC mode, only one time random data input is possible at the same address during
Copy-Back program or page program mode. For the user who use Copy-Back without EDC, there is no limitation for the random data
input at the same address.
Figure 12. Page Copy-Back program Operation with EDC & Read EDC Status
tR
R/B
I/Ox
Add.(5Cycles)
00h
35h
Col. Add.1,2 & Row Add.1,2,3
Source Address
tPROG
85h
Add.(5Cycles)
10h
7Bh
EDC Status Output
Col. Add.1,2 & Row Add.1,2,3
Destination Address
BLOCK ERASE
The Erase operation is done on a block basis. Block address loading is accomplished in three cycles initiated by an Erase Setup
command(60h). Only address A18 to A29 is valid while A12 to A17 is ignored. The Erase Confirm command(D0h) following the block
address loading initiates the internal erasing process. This two-step sequence of setup followed by execution command ensures that
memory contents are not accidentally erased due to external noise conditions.
At the rising edge of WE after the erase confirm command input, the internal write controller handles erase and erase-verify. When
the erase operation is completed, the Write Status Bit(I/O 0) may be checked. Figure 13 details the sequence.
Figure 13. Block Erase Operation
tBERS
R/B
"0"
I/Ox
60h
Address Input(3Cycle)
70h
D0h
Pass
I/O0
"1"
Row Add 1,2,3
Fail
Two-Plane Page Program
Two-Plane Page Program is an extension of Page Program, for a single plane with 2112 byte page registers. Since the device is
equipped with two memory planes, activating the two sets of 2112 byte page registers enables a simultaneous programming of two
pages.
After writing the first set of data up to 2112 byte into the selected page register, Dummy Page Program command (11h) instead of
actual Page Program (10h) is inputted to finish data-loading of the first plane. Since no programming process is involved, R/B
remains in Busy state for a short period of time(tDBSY). Read Status command (70h) may be issued to find out when the device
returns to Ready state by polling the Ready/Busy status bit(I/O 6). Then the next set of data for the other plane is inputted after the
81h command and address sequences. After inputting data for the last plane, actual True Page Program(10h) instead of dummy
Page Program command (11h) must be followed to start the programming process. The operation of R/B and Read Status is the
same as that of Page Program. Althougth two planes are programmed simultaneously, pass/fail is not available for each page when
the program operation completes. Status bit of I/O 0 is set to "1" when any of the pages fails.
Restriction in addressing with Two-Plane Page Program is shown is Figure14.
34
Advance
FLASH MEMORY
K9K8G08U1M
K9F4G08U0M
Figure 14. Two-Plane Page Program
tDBSY
R/B
I/O0 ~ 7
80h
Address & Data Input
11h
tPROG
Address & Data Input
81h
A0 ~ A11 : Valid
A12 ~ A17 : Fixed ’Low’
A18
: Fixed ’Low’
A19 ~ A29 : Fixed ’Low’
70h
10h
A0 ~ A11 : Valid
A12 ~ A17 : Valid
A18
: Fixed ’High’
A19 ~ A29 : Valid
NOTE : It is noticeable that same row address except for A18 is applied to the two blocks
80h
Data
Input
11h
81h
10h
Plane 0
(2048 Block)
Plane 1
(2048 Block)
Block 0
Block 1
Block 2
Block 3
Block 4092
Block 4094
Block 4093
Block 4095
Two-Plane Block Erase
Basic concept of Two-Plane Block Erase operation is identical to that of Two-Plane Page Program. Up to two blocks, one from each
plane can be simultaneously erased. Standard Block Erase command sequences (Block Erase Setup command(60h) followed by
three address cycles) may be repeated up to twice for erasing up to two blocks. Only one block should be selected from each plane.
The Erase Confirm command(D0h) initiates the actual erasing process. The completion is detected by monitoring R/B pin or Ready/
Busy status bit (I/O 6).
Figure 15. Two-Plane Block Erase Operation
tBERS
R/B
I/OX
60h
Address (3 Cycle)
A12 ~ A17 : Fixed ’Low’
:Fixed ’Low’
A18
A19 ~ A29 : Fixed ’Low’
60h
Address (3 Cycle)
A12 ~ A17 : Fixed ’Low’
: Fixed ’High’
A18
A19 ~ A29 : valid
35
D0h
70h
I/O
"1"
Fail
"0"
Pass
Advance
FLASH MEMORY
K9K8G08U1M
K9F4G08U0M
Two-Plane Copy-Back Page Program
Two-Plane Copy-Back Page Program is an extension of Copy-Back Program, for a single plane with 2112 byte page registers. Since
the device is equipped with two memory planes, activating the two sets of 2112 byte page registers enables a simultaneous programming of two pages.
Figure 16. Two-Plane Copy-Back program Operation
tR
R/B
I/Ox
00h
Add.(5Cycles)
tR
35h
Add.(5Cycles)
00h
Col. Add.1,2 & Row Add.1,2,3
Source Address On Plane0
35h
Col. Add.1,2 & Row Add.1,2,3
Source Address On Plane1
1
tPROG
tDBSY
R/B
I/Ox
Add.(5Cycles)
85h
1
11h
Add.(5Cycles)
81h
10h
Col. Add.1,2 & Row Add.1,2,3
Destination Address
Col. Add.1,2 & Row Add.1,2,3
Destination Address
A0 ~ A11 : Fixed ’Low’
A12 ~ A17 : Fixed ’Low’
A18
: Fixed ’Low’
A19 ~ A29 : Fixed ’Low’
A0 ~ A11 : Fixed ’Low’
A12 ~ A17 : Valid
A18
: Fixed ’High’
A19 ~ A29 : Valid
Plane0
70h
Plane1
Source page
Source page
Target page
(1) : Read Copy Back On Plane0
Target page
(2) : Read Copy Back On Plane1
(1)
Data Field
(3)
(2)
Spare Field
(3)
Data Field
(3) : Two-Plane Copy-Back Page Program
Spare Field
Note: 1. Copy-Back Program operation is allowed only within the same memory plane.
2. On the same plane, It’s prohibited to operate copy-back program from an odd address page(source page) to an even
address page(target page) or from an even address page(source page) to an odd address page(target page).
Therefore, the copy-back program is permitted just between odd address pages or even address pages.
36
Advance
FLASH MEMORY
K9K8G08U1M
K9F4G08U0M
Figure 17. Two-Plane Copy-Back program Operation with Random Data Input
tR
R/B
I/Ox
00h
Add.(5Cycles)
35h
tR
00h
Col. Add.1,2 & Row Add.1,2,3
Source Address On Plane0
Add.(5Cycles)
35h
Col. Add.1,2 & Row Add.1,2,3
Source Address On Plane1
1
tDBSY
R/B
I/Ox
85h
Add.(5Cycles)
Data
85h
Col. Add.1,2 & Row Add.1,2,3
1
Add.(2Cycles)
Data
11h
2
Col. Add.1,2
Destination Address
A0 ~ A11 : Valid
A12 ~ A17 : Fixed ’Low’
A18
: Fixed ’Low’
A19 ~ A29 : Fixed ’Low’
tPROG
R/B
I/Ox
85h
2
Add.(5Cycles)
Data
85h
Col. Add.1,2 & Row Add.1,2,3
Add.(2Cycles)
Data
10h
Col. Add.1,2
Destination Address
A0 ~ A11 : Valid
A12 ~ A17 : Valid
A18
: Fixed ’High’
A19 ~ A29 : Valid
Note: 1. Copy-Back Program operation is allowed only within the same memory plane.
2. On the same plane, It’s prohibited to operate copy-back program from an odd address page(source page) to an even
address page(target page) or from an even address page(source page) to an odd address page(target page).
Therefore, the copy-back program is permitted just between odd address pages or even address pages.
3. EDC status Bits are not available during copy back for some bits or bytes modified by Random Data Input operation.
in case of the 528 byte plane unit modification, EDC status bits are abailable
37
Advance
FLASH MEMORY
K9K8G08U1M
K9F4G08U0M
READ STATUS
The device contains a Status Register which may be read to find out whether program or erase operation is completed, and whether
the program or erase operation is completed successfully. After writing 70h command to the command register, a read cycle outputs
the content of the Status Register to the I/O pins on the falling edge of CE or RE, whichever occurs last. This two line control allows
the system to poll the progress of each device in multiple memory connections even when R/B pins are common-wired. RE or CE
does not need to be toggled for updated status. Refer to Table 3 for specific Status Register definitions. The command register
remains in Status Read mode until further commands are issued to it. Therefore, if the status register is read during a random read
cycle, the read command(00h) should be given before starting read cycles.
Table 3. Staus Register Definition for 70h Command
I/O
Page Program
Block Erase
Read
Definition
I/O 0
Pass/Fail
Pass/Fail
Not use
Pass : "0"
I/O 1
Not use
Not use
Not use
Don’t -cared
I/O 2
Not use
Not use
Not use
Don’t -cared
I/O 3
Not Use
Not Use
Not Use
Don’t -cared
I/O 4
Not Use
Not Use
Not Use
Don’t -cared
Don’t -cared
I/O 5
Not Use
Not Use
Not Use
I/O 6
Ready/Busy
Ready/Busy
Ready/Busy
Busy : "0"
I/O 7
Write Protect
Write Protect
Write Protect
Protected : "0"
Fail : "1"
Ready : "1"
Not Protected : "1"
NOTE : 1. I/Os defined ’Not use’ are recommended to be masked out when Read Status is being executed.
READ EDC STATUS
Read EDC status operation is only available on ’Copy Back Program’. The device contains a EDC Status Register which may be
read to find out whether there is error during ’Read for Copy Back’. After writing 7Bh command to the command register, a read cycle
outputs the content of the EDC Status Register to the I/O pins on the falling edge of CE or RE, whichever occurs last. This two line
control allows the system to poll the progress of each device in multiple memory connections even when R/B pins are common-wired.
RE or CE does not need to be toggled for updated status. Refer to Table 4 for specific Status Register definitions. The command register remains in EDC Status Read mode until further commands are issued to it.
Table 4. Status Register Definition for 7Bh Command
I/O
Copy Back Program
Page Program
Block Erase
Read
Definition
I/O 0
Pass/Fail of Copy Back Program
Pass/Fail
Pass/Fail
Not use
Pass : "0", Fail : "1"
I/O 1
EDC Status
Not use
Not use
Not use
No Error : "0", Error : "1"
I/O 2
Validity of EDC Status
Not use
Not use
Not use
Valid : "1", Invalid : "0"
I/O 3
Not Use
Not Use
Not Use
Not Use
Don’t -cared
I/O 4
Not Use
Not Use
Not Use
Not Use
Don’t -cared
I/O 5
Not Use
Not Use
Not Use
Not Use
Don’t -cared
I/O 6
Ready/Busy of Copy Back Program
Ready/Busy
Ready/Busy
Ready/Busy
I/O 7 Write Protect of Copy Back Program
Write Protect
Write Protect
Write Protect Protected : "0", Not Protected :"1"
Busy : "0", Ready : "1"
NOTE : 1. I/Os defined ’Not use’ are recommended to be masked out when Read Status is being executed.
2. More than 2-bit error detection isn’t available for each 528B plane.
That is to say, only 1-bit error detection is avaliable for each 528B plane.
38
Advance
FLASH MEMORY
K9K8G08U1M
K9F4G08U0M
Read ID
The device contains a product identification mode, initiated by writing 90h to the command register, followed by an address input of
00h. Five read cycles sequentially output the manufacturer code(ECh), and the device code and 3rd, 4th cycle ID respectively. The
command register remains in Read ID mode until further commands are issued to it. Figure 18 shows the operation sequence.
Figure 18. Read ID Operation
tCLR
CLE
tCEA
CE
WE
tAR
ALE
tWHR
RE
I/OX
90h
tREA
00h
ECh
Maker code
Address. 1cycle
Device
Code*
3rd Cyc.*
4th Cyc.*
Device code
Device
Device Code*(2nd Cycle)
3rd Cycle*
4th Cycle*
K9F4G08U0M
DCh
10h
95h
K9K8G08U1M
Same as each K9F4G08U0M in it
RESET
The device offers a reset feature, executed by writing FFh to the command register. When the device is in Busy state during random
read, program or erase mode, the reset operation will abort these operations. The contents of memory cells being altered are no
longer valid, as the data will be partially programmed or erased. The command register is cleared to wait for the next command, and
the Status Register is cleared to value C0h when WP is high. If the device is already in reset state a new reset command will be
accepted by the command register. The R/B pin changes to low for tRST after the Reset command is written. Refer to Figure 19
below.
Figure 19. RESET Operation
tRST
R/B
I/OX
FFh
39
Advance
FLASH MEMORY
K9K8G08U1M
K9F4G08U0M
READY/BUSY
The device has a R/B output that provides a hardware method of indicating the completion of a page program, erase and random
read completion. The R/B pin is normally high but transitions to low after program or erase command is written to the command register or random read is started after address loading. It returns to high when the internal controller has finished the operation. The pin is
an open-drain driver thereby allowing two or more R/B outputs to be Or-tied. Because pull-up resistor value is related to tr(R/B) and
current drain during busy(ibusy) , an appropriate value can be obtained with the following reference chart(Fig.20). Its value can be
determined by the following guidance.
Rp
VCC
ibusy
3.3V device - VOL : 0.4V, VOH : 2.4V
Ready Vcc
R/B
open drain output
VOH
CL
VOL
Busy
tf
tr
GND
Device
Figure 20. Rp vs tr ,tf & Rp vs ibusy
@ Vcc = 3.3V, Ta = 25°C , CL = 50pF
tr,tf [s]
Ibusy
150n
100n
1.2
150
3m
100
0.8
2m
Ibusy [A]
200
2.4
tr
50n
50
0.6
1.8 tf
1.8
1.8
1.8
1K
2K
3K
Rp(ohm)
4K
1m
Rp value guidance
Rp(min, 3.3V part) =
3.2V
VCC(Max.) - VOL(Max.)
IOL + ΣIL
=
8mA + ΣIL
where IL is the sum of the input currents of all devices tied to the R/B pin.
Rp(max) is determined by maximum permissible limit of tr
40
Advance
FLASH MEMORY
K9K8G08U1M
K9F4G08U0M
Data Protection & Power up sequence
The device is designed to offer protection from any involuntary program/erase during power-transitions. An internal voltage detector
disables all functions whenever Vcc is below about 2V. WP pin provides hardware protection and is recommended to be kept at VIL
during power-up and power-down. A recovery time of minimum 10µs is required before internal circuit gets ready for any command
sequences as shown in Figure 21. The two step command sequence for program/erase provides additional software protection.
≈
Figure 21. AC Waveforms for Power Transition
3.3V device : ~ 2.5V
High
≈
VCC
WE
10µs
≈
≈
WP
41
3.3V device : ~ 2.5V