ENGLISH TECHNIQUE PAPER

Quality and Reliability Report
6. Process Related Reliability Test Data
Dynamic Early Fail Rate (EFR)
1. Test Condition
Performed to accelerate infant mortality failure mechanisms within 1~3 years
Spec: Failure Rate < 300 ppm, Confidence Level: 60%
2. Dynamic RAM Products
Design Rule
Period
Technology
Sample
No. of Failure/Failure Mode
Failure
Size
Total
Function
DC
Pause
Rate (ppm)
0.046m
Q3,14
22872
0
0
0
0
40
CMOS/SPTM
Q4,14
23408
0
0
0
0
39
Q1,15
23408
0
0
0
0
39
Q2,15
20291
0
0
0
0
45
0.065m
Q3,14
17090
0
0
0
0
54
CMOS/SPTM
Q4,14
20938
0
0
0
0
44
Q1,15
20522
0
0
0
0
45
Q1,15
11732
0
0
0
0
78
3. Non-Volatile Memory Products
Design Rule
Period
Technology
Sample
No. of Failure/Failure Mode
Failure
Size
Total
Function
DC
DR
Rate (ppm)
0.058 m
Q3,14
13000
0
0
0
0
71
CMOS/DPTM
Q4,14
14000
0
0
0
0
65
3V Serial Flash
Q1,15
12000
0
0
0
0
76
Q2,15
12000
0
0
0
0
76
0.058 m
Q3,14
4000
0
0
0
0
229
CMOS/DPTM
Q4,14
5000
0
0
0
0
183
1.8V Serial Flash
Q1,15
4000
0
0
0
0
229
Q2,15
4000
0
0
0
0
229
15
Quality and Reliability Report
0.09 m
Q3,14
17000
0
0
0
0
54
CMOS/DPTM
Q4,14
17000
0
0
0
0
54
3V Serial Flash
Q1,15
11000
0
0
0
0
83
Q2,15
12000
0
0
0
0
76
0.09 m
Q3,14
5000
0
0
0
0
183
CMOS/DPTM
Q4,14
5000
0
0
0
0
183
1.8V Serial Flash
Q1,15
4000
0
0
0
0
229
Q2,15
4000
0
0
0
0
229
0.09 m
Q3,14
3100
0
0
0
0
296
CMOS/DPTM
Q4,14
3100
0
0
0
0
296
3V Parallel Flash
Q1,15
3100
0
0
0
0
296
Q2,15
3100
0
0
0
0
296
16
Quality and Reliability Report
High-Temperature Operating Life Test (HTOL)
1. Test Condition
Condition:
Dynamic operating condition with Vcc = 3.6V/2.7V/1.9V/1.575V for 3.3V/2.5V/1.8V/1.5V
products,T=125C,f=1.0MHz/1.25MHz/1.25MHz/1.25MHz for synchronous SDRAMs/DDR/
DDRII/DDRIII
Dynamic operating condition with Vcc = 3.6V/1.95V for 3.3V/1.8V products, T = 125C, f = 1
MHz for Nov-Volatile Memory
Duration:
Test time points at 500 hrs, and 1000 hrs.
2. Dynamic RAM Products
2.1 By Device Type
Product
Type
Part No.
Design
Rule
Period
No. of
Samples
No. of
Fails
128M  16
W632GG6KB
0.046
Q3,14
-
-
m
Q4,14
77
0
Q1,15
-
-
Q2,15
-
-
0.046
Q3,14
77
0
m
Q4,14
-
-
Q1,15
77
0
Q2,15
77
0
0.065
Q3,14
77
0
m
Q4,14
77
0
Q1,15
77
0
Q2,15
77
0
1.575V
32M  16
W9751G6KB
1.9V
8M  16
3.6V
W9812G6JH
Reject Information
17
Quality and Reliability Report
2.2 By Process
Design Rule
Technology
Period
No. of
Samples
No. of
Fails
0.046 m
Q3,14
77
0
CMOS/SPTM
Q4,14
77
0
Q1,15
77
0
Q2,15
77
0
0.065 m
Q3,14
77
0
CMOS/SPTM
Q4,14
77
0
Q1,15
77
0
Q2,15
77
0
Reject Information
3. Non-Volatile Memory Products
3.1 By Device Type
Product
Type
Part No.
128M, 3V
SERIAL
W25Q128FV
Design
Rule
Period
No. of
Samples
No. of
Fails
0.058
Q3,14
77
0
m
Q4,14
77
0
Q1,15
77
0
Q2,15
77
0
0.058
Q3,14
77
0
m
Q4,14
77
0
Q1,15
77
0
Q2,15
77
0
0.09
Q3,14
77
0
um
Q4,14
77
0
Q1,15
77
0
Q2,15
77
0
0.09
Q3,14
77
0
m
Q4,14
77
0
Q1,15
77
0
Q2,15
77
0
FLASH
64M, 1.8V
SERIAL
W25Q64FW
FLASH
4M, 3V
SERIAL
W25Q40CV
FLASH
8M, 1.8V
SERIAL
FLASH
W25Q80BW
Reject Information
18
Quality and Reliability Report
64M, 3V
Parallel
W29GL64C
0.09
Q3,14
77
0
m
Q4,14
77
0
Q1,15
77
0
Q2,15
77
0
FLASH
3.2 By Process
Design Rule
Technology
Period
No. of
Samples
No. of
Fails
0.058 m
Q3,14
77
0
CMOS/DPTM
Q4,14
77
0
3V Serial Flash
Q1,15
77
0
Q2,15
77
0
0.058 m
Q3,14
77
0
CMOS/DPTM
Q4,14
77
0
1.8V Serial Flash
Q1,15
77
0
Q2,15
77
0
0.09 m
Q3,14
77
0
CMOS/DPTM
Q4,14
77
0
3V Serial Flash
Q1,15
77
0
Q2,15
77
0
0.09 m
Q3,14
77
0
CMOS/DPTM
Q4,14
77
0
1.8V Serial Flash
Q1,15
77
0
Q2,15
77
0
0.09 m
Q3,14
77
0
CMOS/DPTM
Q4,14
77
0
3V Parallel Flash
Q1,15
77
0
Q2,15
77
0
Reject Information
19
Quality and Reliability Report
High-Temperature Storage Life Test (HTSL)
1. Test Condition
Condition:
T = 150C
Duration:
Test time points at 500 hrs, and 1000 hrs. (Need to do precondition)
2. Dynamic RAM Products
2.1 By Device Type
Product
Type
Part No.
Design
Rule
Period
No. of
Samples
No. of
Fails
128M  16
W632GG6KB
0.046
Q3,14
-
-
m
Q4,14
77
0
Q1,15
-
-
Q2,15
-
-
0.046
Q3,14
77
0
m
Q4,14
-
-
Q1,15
77
0
Q2,15
77
0
0.065
Q3,14
77
0
m
Q4,14
77
0
Q1,15
77
0
Q2,15
77
0
1.575V
32M  16
W951G6KB
1.9V
8M  16
3.6V
W9812G6JH
Reject Information
20
Quality and Reliability Report
2.2 By Process
Design Rule
Technology
Period
No. of
Samples
No. of
Fails
0.046 m
Q3,14
77
0
CMOS/SPTM
Q4,14
77
0
Q1,15
77
0
Q2,15
77
0
0.065 m
Q3,14
77
0
CMOS/SPTM
Q4,14
77
0
Q1,15
77
0
Q2,15
77
0
Reject Information
3. Non-Volatile Memory Products
3.1 By Device Type
Product
Type
Part No.
128 M, 3V
SERIAL
W25Q128FV
Design
Rule
Period
No. of
Samples
No. of
Fails
0.058
Q3,14
77
0
m
Q4,14
77
0
Q1,15
77
0
Q2,15
77
0
0.058
Q3,14
77
0
m
Q4,14
77
0
Q1,15
77
0
Q2,15
77
0
0.09
Q3,14
77
0
um
Q4,14
77
0
Q1,15
77
0
Q2,15
77
0
0.09
Q3,14
77
0
m
Q4,14
77
0
Q1,15
77
0
Q2,15
77
0
FLASH
64M, 1.8V
SERIAL
W25Q64FW
FLASH
4 M, 3V
SERIAL
W25Q40CV
FLASH
8 M 1.8V
SERIAL
FLASH
W25Q80BW
Reject Information
21
Quality and Reliability Report
64 M 3V
Parallel
W29GL64C
0.09
Q3,14
77
0
m
Q4,14
77
0
Q1,15
77
0
Q2,15
77
0
FLASH
3.2 By Process
Design Rule
Technology
Period
No. of
Samples
No. of
Fails
0.058 m
Q3,14
77
0
CMOS/DPTM
Q4,14
77
0
3V Serial Flash
Q1,15
77
0
Q2,15
77
0
0.058 m
Q3,14
77
0
CMOS/DPTM
Q4,14
77
0
1.8V Serial Flash
Q1,15
77
0
Q2,15
77
0
0.09 m
Q3,14
77
0
CMOS/DPTM
Q4,14
77
0
3V Serial Flash
Q1,15
77
0
Q2,15
77
0
0.09 m
Q3,14
77
0
CMOS/DPTM
Q4,14
77
0
1.8V Serial Flash
Q1,15
77
0
Q2,15
77
0
0.09 m
Q3,14
77
0
CMOS/DPTM
Q4,14
77
0
3V Parallel Flash
Q1,15
77
0
Q2,15
77
0
Reject Information
22
Quality and Reliability Report
Data Retention Test (DR)
1. Test Condition
Condition:
T = 150C
Duration:
Test time points at 500 hrs, and 1000 hrs.
2. Non-Volatile Memory Products
2.1 By Device Type
Product
Type
Part No.
128M, 3V
SERIAL
W25Q128FV
Design
Rule
Period
No. of
Samples
No. of
Fails
0.058
Q3,14
77
0
m
Q4,14
77
0
Q1,15
77
0
Q2,15
77
0
0.058
Q3,14
77
0
m
Q4,14
77
0
Q1,15
77
0
Q2,15
77
0
0.09
Q3,14
77
0
m
Q4,14
77
0
Q1,15
77
0
Q2,15
77
0
0.09
Q3,14
77
0
m
Q4,14
77
0
Q1,15
77
0
Q2,15
77
0
0.09
Q3,14
77
0
m
Q4,14
77
0
Q1,15
77
0
Q2,15
77
0
FLASH
64M, 1.8V
SERIAL
W25Q64FW
FLASH
4M, 3V
SERIAL
W25Q40CV
FLASH
8M 1.8V
SERIAL
W25Q80BW
FLASH
64M 3V
Parallel
FLASH
W29GL64C
Reject Information
23
Quality and Reliability Report
2.2 By Process
Design Rule
Technology
Period
No. of
Samples
No. of
Fails
0.058 m
Q3,14
77
0
CMOS/DPTM
Q4,14
77
0
3V Serial Flash
Q1,15
77
0
Q2,15
77
0
0.058 m
Q3,14
77
0
CMOS/DPTM
Q4,14
77
0
1.8V Serial Flash
Q1,15
77
0
Q2,15
77
0
0.09 m
Q3,14
77
0
CMOS/DPTM
Q4,14
77
0
3V Serial Flash
Q1,15
77
0
Q2,15
77
0
0.09 m
Q3,14
77
0
CMOS/DPTM
Q4,14
77
0
1.8V Serial Flash
Q1,15
77
0
Q2,15
77
0
0.09 m
Q3,14
77
0
CMOS/DPTM
Q4,14
77
0
3V Parallel Flash
Q1,15
77
0
Q2,15
77
0
Reject Information
24
Quality and Reliability Report
Endurance Cycling With Data Retention Test
Room Temperature cycling with DR
1. Test Condition
Condition:
Duration:
T = Room temperature, Vcc = 3.6V/1.95V for Endurance Cycling test, and
T = Room temperature ,Vcc = 3.6V/1.95V , f = 10 MHz for room temperature operation life test
1K, 10K, 100K cycles for Endurance Cycling test and 500 hrs for room temperature operation life test
2. Non-Volatile Memory Products
2.1 By Device Type
Product
Type
Part No.
128M, 3V
SERIAL
W25Q128FV
Design
Rule
Period
No. of
Samples
No. of
Fails
0.058
Q3,14
38
0
m
Q4,14
38
0
Q1,15
38
0
Q2,15
38
0
0.058
Q3,14
38
0
m
Q4,14
38
0
Q1,15
38
0
Q2,15
38
0
0.09
Q3,14
38
0
m
Q4,14
38
0
0.09
Q1,15
Q2,15
Q3,14
38
38
38
0
0
0
m
Q4,14
38
0
Q1,15
Q2,15
38
38
0
0
0.09
Q3,14
38
0
m
Q4,14
38
0
Q1,15
38
0
Q2,15
38
0
FLASH
64M, 1.8V
SERIAL
W25Q64FW
FLASH
4M, 3V
SERIAL
W25Q40CV
FLASH
8M, 1.8V
SERIAL
W25Q80BW
FLASH
64M, 3V
Parallel
FLASH
W29GL64C
Reject Information
25
Quality and Reliability Report
2.2 By Process
Design Rule
Technology
Period
No. of
Samples
No. of
Fails
0.058 m
Q3,14
38
0
CMOS/DPTM
Q4,14
38
0
3V Serial Flash
Q1,15
38
0
Q2,15
38
0
Q3,14
38
0
CMOS/DPTM
Q4,14
38
0
1.8V Serial Flash
Q1,15
38
0
Q2,15
38
0
Q3,14
38
0
CMOS/DPTM
Q4,14
38
0
3V Serial Flash
Q1,15
38
0
Q2,15
38
0
Q3,14
38
0
CMOS/DPTM
Q4,14
38
0
1.8V Serial Flash
Q1,15
38
0
Q2,15
38
0
Q3,14
38
0
CMOS/DPTM
Q4,14
38
0
3V Parallel Flash
Q1,15
38
0
Q2,15
38
0
0.058 m
0.09 m
0.09 m
0.09 m
Reject Information
26
Quality and Reliability Report
High Temperature cycling with DR
1. Test Condition
Condition: T = 85C, Vcc = 3.6V/1.95V for Endurance Cycling test, and T = 125C for High Temperature Data
Retention test
Duration: 1K, 10K, 100K cycles for Endurance Cycling testand 100 hrs for High Temperature Data Retention test
2. Non-Volatile Memory Products
2.1 By Device Type
Product
Type
Part No.
128M, 3V
SERIAL
W25Q128FV
Design
Rule
Period
No. of
Samples
No. of
Fails
0.058
Q3,14
39
0
m
Q4,14
39
0
Q1,15
Q2,15
39
39
0
0
0.058
Q3,14
39
0
m
Q4,14
39
0
Q1,15
39
0
Q2,15
39
0
0.09
Q3,14
39
0
m
Q4,14
39
0
Q1,15
39
0
Q2,15
39
0
Q3,14
Q4,14
Q1,15
39
39
39
0
0
0
0.09
Q2,15
Q3,14
39
39
0
0
m
Q4,14
39
0
Q1,15
Q2,15
39
39
0
0
FLASH
64M, 1.8V
SERIAL
W25Q64FW
FLASH
4M, 3V
SERIAL
W25Q40CV
FLASH
8M, 1.8V
SERIAL
FLASH
0.09
W25Q80BW
64M, 3V
Parallel
FLASH
W29GL64C
m
Reject Information
27
Quality and Reliability Report
2.2 By Process
Design Rule
Technology
Period
No. of
Samples
No. of
Fails
0.058 m
Q3,14
39
0
CMOS/DPTM
Q4,14
39
0
3V Serial Flash
Q1,15
39
0
Q2,15
39
0
Q3,14
38
0
CMOS/DPTM
Q4,14
38
0
1.8V Serial Flash
Q1,15
38
0
Q2,15
38
0
Q3,14
39
0
CMOS/DPTM
Q4,14
39
0
3V Serial Flash
Q1,15
39
0
Q2,15
39
0
Q3,14
39
0
CMOS/DPTM
Q4,14
39
0
1.8V Serial Flash
Q1,15
39
0
Q2,15
39
0
Q3,14
39
0
CMOS/DPTM
Q4,14
39
0
3V Parallel Flash
Q1,15
39
0
Q2,15
39
0
0.058 m
0.09 m
0.09 m
0.09 m
Reject Information
28
Quality and Reliability Report
Electrostatic Discharge (ESD) Test
1. Test Condition
Human Body Mode.
According to JESD22-A114.
2. Dynamic RAM Products
Product Type
Design Rule
(m)
No. of DUT
Pass Voltage (HBM)
64M x 16 (1.9 V)
0.065
12
> 2 kV
16M x 16 (2.7 V)
0.065
12
> 2 kV
32M x 16 (1.8 V)
0.065
12
> 2 kV
16M x 16 (1.8 V)
0.065
12
> 2 kV
8M x 16 (2.7 V)
0.065
12
> 2 kV
8M x 16 (1.8 V)
0.065
12
> 2 kV
4M x 16 (2.7 V)
0.065
12
> 2 kV
64M x 16 (1.5 V)
0.046
12
> 2 kV
128M x 16 (1.5 V)
0.046
12
> 2 kV
32M x 16 (1.9 V)
0.046
12
> 2 kV
16M x 16 (1.9 V)
0.046
12
> 2 kV
8M x 16 (1.9 V)
0.046
12
> 2 kV
32M x 32 (1.9 V)
0.046
12
> 2 kV
16M x 32 (1.9 V, LP)
0.046
12
> 2 kV
32M x 32 (1.9 V, LP)
0.046
12
> 2 kV
8M x 32 (1.95 V, LP)
0.046
12
> 2 kV
16M x 32 (1.95 V, LP)
0.046
12
> 2 kV
32M x 32 (1.95 V, LP)
0.046
12
> 2 kV
64M x 32 (1.95 V, LP)
0.046
12
> 2 kV
64M x 16 (1.9 V)
0.046
12
> 2 kV
4M x 16 (2.7 V)
0.046
12
> 2 kV
8M x 16 (2.7 V)
0.046
12
> 2 kV
4M x 16 (1.98 V)
0.046
12
> 2 kV
29
Quality and Reliability Report
3. Non-Volatile Memory Products
Product Type
Design Rule
(m)
No. of DUT
Pass Voltage (HBM)
1G NAND FLASH(3V)
0.046
12
> 2 kV
256M SERIAL FLASH (3V)
0.058
12
> 2 kV
128M SERIAL FLASH (3V)
0.058
12
> 2 kV
64M SERIAL FLASH (3V)
0.058
12
> 2 kV
32M SERIAL FLASH (3V)
0.058
12
> 2 kV
128M SERIAL FLASH(1.8V)
0.058
12
> 2 kV
64M SERIAL FLASH (1.8V)
0.058
12
> 2 kV
32M SERIAL FLASH (1.8V)
0.058
12
> 2 kV
4M SERIAL FLASH (3V)
0.09
12
> 2 kV
8M SERIAL FLASH (3V)
0.09
12
> 2 kV
16M SERIAL FLASH (3V)
0.09
12
> 2 kV
32M SERIAL FLASH (3V)
0.09
12
> 2 kV
64M SERIAL FLASH (3V)
0.09
12
> 2 kV
128M SERIAL FLASH (3V)
0.09
12
> 2 kV
4M SERIAL FLASH (1.8V)
0.09
12
> 2 kV
8M SERIAL FLASH (1.8V)
0.09
12
> 2 kV
16M SERIAL FLASH(1.8V)
0.09
12
> 2 kV
32M SERIAL FLASH(1.8V)
0.09
12
> 2 kV
64M SERIAL FLASH(1.8V)
0.09
12
> 2 kV
32M Parallel FLASH(3V)
0.09
12
> 2 kV
64M Parallel FLASH(3V)
0.09
12
> 2 kV
128M Parallel FLASH(3V)
0.09
12
> 2 kV
30
Quality and Reliability Report
Latch-Up Test
1. Test Condition
According to JEDEC -78.
2. Dynamic RAM Products
Product Type
Design Rule
(m)
No. of DUT
Pass Current
4M x 16 (3.6 V)
0.09
6
> 200 mA
16M x 16 (3.6 V)
0.09
6
> 200 mA
4M x 32 (3.6 V)
0.09
6
> 200 mA
64M x 16 (1.9 V)
0.065
6
> 200 mA
16M x 16 (2.7 V)
0.065
6
> 200 mA
32M x 16 (1.8 V)
0.065
6
> 200 mA
16M x 16 (1.8 V)
0.065
6
> 200 mA
8M x 16 (2.7 V)
0.065
6
> 200 mA
8M x 16 (1.8 V)
0.065
6
>200 mA
4M x 16 (2.7 V)
0.065
6
> 200 mA
64M x 16 (1.5 V)
0.046
6
>200 mA
128M x 16 (1.5 V)
0.046
6
>200 mA
32M x 16 (1.9 V)
0.046
6
>200 mA
16M x 16 (1.9 V)
0.046
6
>200 mA
8M x 16 (1.9 V)
0.046
6
>200 mA
32M x 32 (1.9 V)
0.046
6
>200 mA
16M x 32 (1.9 V, LP)
0.046
6
>200 mA
32M x 32 (1.9 V, LP)
0.046
6
>200 mA
8M x 32 (1.95 V, LP)
0.046
6
>200 mA
16M x 32 (1.95 V, LP)
0.046
6
>200 mA
32M x 32 (1.95 V, LP)
0.046
6
>200 mA
64M x 32 (1.95 V, LP)
0.046
6
>200 mA
64M x 16 (1.9 V)
0.046
6
>200 mA
4M x 16 (2.7 V)
0.046
6
>200 mA
8M x 16 (2.7 V)
0.046
6
>200 mA
4M x 16 (1.98 V)
0.046
6
>200 mA
31
Quality and Reliability Report
3. Non-Volatile Memory Products
Product Type
Design Rule
(m)
No. of DUT
Pass Voltage
1G NAND FLASH (3V)
0.046
6
> 200 mA
256M SERIAL FLASH (3V)
0.058
6
> 200 mA
128M SERIAL FLASH (3V)
0.058
6
> 200 mA
64M SERIAL FLASH (3V)
0.058
6
> 200 mA
32M SERIAL FLASH (3V)
0.058
6
> 200 mA
128M SERIAL (FLASH(1.8V)
0.058
6
> 200 mA
64M SERIAL FLASH (1.8V)
0.058
6
> 200 mA
32M SERIAL FLASH (1.8V)
0.058
6
> 200 mA
4M SERIAL FLASH (3V)
0.09
6
> 200 mA
8M SERIAL FLASH (3V)
0.09
6
> 200 mA
16M SERIAL FLASH (3V)
0.09
6
> 200 mA
32M SERIAL FLASH (3V)
0.09
6
> 200 mA
64M SERIAL FLASH (3V)
0.09
6
> 200 mA
128M SERIAL FLASH (3V)
0.09
6
> 200 mA
4M SERIAL FLASH (1.8V)
0.09
6
>200 mA
8M SERIAL FLASH (1.8V)
0.09
6
> 200 mA
16M SERIAL FLASH(1.8V)
0.09
6
> 200 mA
32M SERIAL FLASH(1.8V)
0.09
6
> 200 mA
64M SERIAL FLASH(1.8V)
0.09
6
> 200 mA
32M Parallel FLASH (3V)
0.09
6
> 200 mA
64M Parallel FLASH (3V)
0.09
6
> 200 mA
128M Parallel FLASH (3V)
0.09
6
> 200 mA
32