Quality and Reliability Report 8.1 Device Reliability Test Data – FLASH Hot Carrier Effect Test 1. Flash Processes 1.1 58nm / 3.3V WinStack DPTM Flash Process (F05811A) Lot No Device Type Life Time (Years) 6028AY200 NL W/L=10/0.3 1.29E+03 Pass NH W/L=10/0.60 7.66E+05 Pass PL W/L=10/0.35 3.31E+10 Pass PH W/L=10/0.60 2.03E+14 Pass NL W/L=10/0.3 1.01E+03 Pass NH W/L=10/0.60 4.37E+04 Pass PL W/L=10/0.35 1.68E+11 Pass PH W/L=10/0.60 4.47E+12 Pass 7.88E+02 Pass NH W/L=10/0.60 9.12E+04 Pass PL W/L=10/0.35 4.80E+09 Pass PH W/L=10/0.60 1.85E+11 Pass 6028AY2AK 6028AX1AW NL W/L=10/0.3 Pass/Fail 1.2 90nm / 3.3V WinStack DPTM Flash Process (F09810A) Lot No Device Type Life Time (Years) 681982400 NL W/L=10/0.3 2.03E+05 Pass NH W/L=10/0.45 2.63E+04 Pass PL W/L=10/0.35 6.64E+14 Pass PH W/L=10/0.45 1.10E+15 Pass NL W/L=10/0.3 1.28E+05 Pass NH W/L=10/0.45 9.86E+05 Pass PL W/L=10/0.35 1.27E+14 Pass PH W/L=10/0.45 6.04E+16 Pass 68239D200 Pass/Fail 28 Quality and Reliability Report 68339H700 NL W/L=10/0.3 5.68E+04 Pass NH W/L=10/0.45 2.23E+05 Pass PL W/L=10/0.35 2.61E+14 Pass PH W/L=10/0.45 6.07E+16 Pass Electromigration 1. Flash Process 1.1 58nm / 3.3V WinStack DPTM Flash Process (F05811A) Structure M1 M2 M3 V2 V3 1 lot >1000 Khrs >1000 Khrs 2.59E+03 Khrs 7.41E+02 Khrs 5.88E+03 Khrs 2nd lot >1000 Khrs >1000 Khrs 2.14E+03 Khrs 3.62E+02 Khrs 6.31E+03 Khrs 3rd lot >1000 Khrs >1000 Khrs 1.51E+03 Khrs 3.64E+02 Khrs 3.37E+03 Khrs V2 V3 st 1.2 90nm / 3.3V WinStack DPTM Flash Process (F09810A) Structure 1st lot 2nd lot M1 M2 M3 3.13E+02 Khrs 3.48E+03 Khrs 2.87E+02 Khrs 4.29E+02 Khrs 1.06E+02 Khrs 1.22E+02 Khrs 3.48E+03 Khrs 2.61E+02 Khrs 1.08E+03 Khrs 6.67E+02 Khrs 1.16E+02 Khrs 5.47E+03 Khrs 1.69E+02 Khrs 7.60E+02 Khrs 5.10E+02 Khrs rd 3 lot SM: Pass. There is no samples with R>10% after 1000hrs stress @250 C. 29 Quality and Reliability Report TDDB Test 1. Flash Processes 1.1 58nm / 3.3V WinStack DPTM Flash Process ( F05811A) Lot No Device Type 6028AY200 NL 75A 1.24E+03 Pass NH 155A 7.08E+08 Pass PL 75 A 6.03E+02 Pass PH 155A 1.53E+07 Pass NL 75A 9.04E+02 Pass NH 155A 3.79E+09 Pass PL 75 A 9.23E+03 Pass PH 155A 1.11E+08 Pass 4.21E+02 Pass NH 155A 1.29E+07 Pass PL 75 A 9.93E+02 Pass PH 155A 4.21E+09 Pass 6028AY2AK 6028AX1AW NL 75A Life Time (Years) Pass/Fail 1.2 90nm / 3.3V WinStack DPTM Flash Process (F09810A) Lot No Device Type Life Time (Years) Pass/Fail 681892400 NL 65A 5.46E+03 Pass NH 147A 1.69E+09 Pass PL 65 A 1.65E+04 Pass PH 147A 8.99E+10 Pass NL 65A 8.92E+02 Pass NH 147A 2.92E+09 Pass PL 65 A 8.02E+02 Pass PH 147A 6.29E+09 Pass 68239D200 30 Quality and Reliability Report 68339H700 NL 65A 3.37E+02 Pass NH 147A 8.60E+08 Pass PL 65 A 2.61E+02 Pass PH 147A 1.14E+08 Pass NBTI Test 1. Flash Processes 1.1 58 nm / 3.3V WinStack DPTM Flash Process (F05811A) Lot No Device Type Life Time (Years) Pass/Fail 6028AY200 PL W/L=10/0.35 5.22E+03 Pass PH W/L=10/0.60 1.32E+03 Pass PL W/L=10/0.35 6.52E+03 Pass PH W/L=10/0.60 1.81E+03 Pass 6028AX1AW PL W/L=10/0.35 1.13E+05 Pass PH W/L=10/0.60 3.97E+03 Pass 6028AY2AK 1.2 90nm / 3.3V WinStack DPTM Flash Process (F09810A) Lot No Device Type Life Time (Years) Pass/Fail 681982400 NL W/L=10/0.3 1.64E+20 Pass NH W/L=10/0.45 4.53E+48 Pass PL W/L=10/0.35 8.85E+01 Pass PH W/L=10/0.45 2.38E+07 Pass NL W/L=10/0.3 1.34E+20 Pass NH W/L=10/0.45 3.53E+42 Pass PL W/L=10/0.35 9.83E+02 Pass PH W/L=10/0.45 7.08E+04 Pass NL W/L=10/0.3 1.40E+20 Pass NH W/L=10/0.45 6.51E+49 Pass PL W/L=10/0.35 3.58E+02 Pass PH W/L=10/0.45 1.36E+05 Pass 68239D200 68339H700 31 Quality and Reliability Report 8.2 Device Reliability Test Data – DRAM 8.2.1 90nm Process: 300 mm FAB 1. TDDB (years ) NWell PWell Cell On film On film Pass/ 512M 128M Fail nf nflo Pf Pflotk 1 st Qual. 1.42E+08 2.05E+05 3.09E+05 1.03E+05 2.09E+04 1.39E+04 1.51E+04 Pass 2 nd Qual. 6.16E+07 1.03E+05 1.64E+06 4.68E+05 1.17E+04 2.69E+04 6.60E+04 Pass 3 rd Qual. 1.16E+07 9.50E+04 8.46E+05 1.89E+05 1.67E+04 1.17E+06 2.43E+06 Pass 2. HCE: AC(years ) NFET NFET nf nf nf nl nl Pass/ nlk Fail L=0.13 L=0.15 L=0.18 L=0.16 L=0.21 L=0.145 1 st Qual. 2.42E+03 1.95E+04 2.09E+04 1.69E+06 2.15E+06 8.91E+04 Pass 2 nd Qual. 2.38E+03 1.56E+04 2.27E+04 7.97E+05 2.20E+06 4.84E+04 Pass 3 rd Qual. 1.90E+03 2.57E+04 2.24E+04 9.39E+05 2.11E+06 5.07E+04 Pass (years ) NFET nlk PFET nlk pf Pass/ pf pf pflo Fail L=0.165 L=0.23 L=0.14 L=0.16 L=0.21 L=0.14 1 st Qual. 1.43E+09 4.89E+01 5.37E+50 7.42E+55 7.29E+55 2.51E+47 Pass 2 nd Qual. 8.33E+09 4.41E+01 6.07E+52 8.48E+55 7.59E+55 3.90E+47 Pass 3 rd Qual. 5.78E+10 7.44E+01 5.12E+44 2.31E+53 1.96E+54 9.94E+44 Pass (years ) PFET PFET pflo pflotk pflotk pflotk pflotk Pass/ pflotk Fail L=0.30 L=0.18 L=0.2 L=0.22 L=0.23 L=0.31 1 st Qual. 3.20E+63 2.95E+04 1.64E+05 2.26E+06 4.20E+07 3.17E+09 Pass 2 nd Qual. 6.80E+59 2.31E+04 1.03E+05 1.17E+06 3.26E+07 3.14E+09 Pass 3 rd Qual. 1.53E+54 1.93E+04 1.02E+05 1.13E+06 2.22E+07 2.35E+09 Pass 32 Quality and Reliability Report 3. BT: DC(years ) Pf Pf Pftklo Pftklo Pass/ L=0.14 L=2.0 L=0.18 L=2.0 Fail 1 st Qual. 4.00E+28 4.65E+07 1.75E+39 1.12E+35 Pass 2 nd Qual. 3.11E+34 6.05E+10 3.29E+22 1.83E+34 Pass 3 rd Qual. 2.93E+21 9.47E+06 3.32E+31 1.24E+27 Pass 4. EM: Lot Lot#1 Lot#2 Lot#3 5. SM: Structure Ea n Stress Condition Lifetime T(C) Current ( mA ) ( Hours ) Pass / Fail C1_us_230 M1 0.81 2.211 235 2.944 1.62E+06 Pass C1C2_us_380 M2 0.70 1.942 235 5.168 2.37E+05 Pass C1C2_us_860 M2 0.74 2.218 235 51.17 5.88E+07 Pass C1_us_230 C1 0.97 1.829 235 0.252 8.56E+05 Pass C1C2_us_380_C2 0.94 1.522 235 0.484 4.79E+06 Pass C1C2_us_860 C2 0.91 1.546 235 1.742 3.15E+07 Pass C1_us_230 M1 0.81 2.211 235 2.944 1.86E+06 Pass C1C2_us_380 M2 0.70 1.942 235 5.168 2.38E+05 Pass C1C2_us_860 M2 0.74 2.218 235 51.17 6.06E+07 Pass C1_us_230 C1 0.97 1.829 235 0.252 8.53E+05 Pass C1C2_us_380_C2 0.94 1.522 235 0.484 4.83E+06 Pass C1C2_us_860 C2 0.91 1.546 235 1.742 3.22E+07 Pass C1_us_230 M1 0.81 2.211 235 2.944 1.91E+06 Pass C1C2_us_380 M2 0.70 1.942 235 5.168 2.84E+05 Pass C1C2_us_860 M2 0.74 2.218 235 51.17 6.18E+07 Pass C1_us_230 C1 0.97 1.829 235 0.252 8.59E+05 Pass C1C2_us_380_C2 0.94 1.522 235 0.484 4.83E+06 Pass C1C2_us_860 C2 0.91 1.546 235 1.742 3.24E+07 Pass Pass. There is no samples with R>10% after 1000hrs stress @250C. 33 Quality and Reliability Report 8.2.2 65nm Process: 300 mm FAB 1. TDDB (years ) Pass/ Ntn Ntk Ptn Ptk Array CAP Fail 1 st Qual. 3.83E+04 2.46E+02 7.47E+02 8.96E+01 1.99E+03 1.83E+02 Pass 2 nd Qual. 4.64E+02 6.11E+02 8.84E+02 3.79E+01 4.02E+02 4.39E+03 Pass 3 rd Qual. 3.12E+02 3.27E+02 3.05E+02 2.34E+01 2.14E+02 4.30E+03 Pass 2. HCE: AC(years ) NFET NFET nf nf nf Pass/ nflo nflo nflo Fail L=0.08 L=0.10 L=0.14 L=0.10 L=0.12 L=0.15 1 st Qual. 3.61E+05 3.40E+05 2.02E+10 1.37E+05 1.44E+10 3.63E+15 Pass 2 nd Qual. 2.39E+05 1.10E+06 3.62E+07 1.93E+07 2.74E+15 1.12E+20 Pass 3 rd Qual. 3.21E+05 1.07E+07 3.22E+12 6.05E+09 3.49E+09 7.10E+11 Pass AC(years ) NFET NFET nflotk nflotk L=0.14 nflotk L=0.16 nflotk L=0.20 Pass/ nftk nftk nftk L=0.30 L=0.16 L=0.21 L=0.30 Fail 1 st Qual. >4.38E+01 >1.04E+03 6.21E+06 7.45E+09 >2.63E+01 6.46E+03 9.20E+05 Pass 2 nd Qual. >1.59E+01 >1.31E+03 2.33E+06 1.31E+08 >4.14E+01 4.43E+03 2.76E+05 Pass 3 rd Qual. >2.52E+01 >2.05E+03 1.68E+06 9.85E+07 >5.21E+02 5.29E+03 7.20E+04 Pass PFET (years ) pf pf PFET pf Pass/ pflo pflo pflo Fail L=0.08 L=0.10 L=0.14 L=0.10 L=0.12 L=0.14 1 st Qual. 1.60E+09 7.18E+06 6.74E+09 3.03E+07 4.13E+04 7.58E+12 Pass 2 nd Qual. 5.21E+07 3.97E+07 1.97E+06 1.50E+05 5.61E+02 6.19E+09 Pass 3 rd Qual. 9.35E+05 1.09E+05 3.85E+07 2.10E+05 3.94E+03 1.76E+06 Pass 34 Quality and Reliability Report (years ) PFET PFET pflotk pflotk L=0.14 L=0.16 pflotk pflotk L=0.21 Pass/ pftk pftk pftk L=0.30 L=0.14 L=0.16 L=0.21 pftk Fail L=0.30 1 st Qual. >6.07E+05 >9.19E+05 1.29E+08 1.51E+05 >6.16E+05 >6.73E+04 3.18E+02 9.60E+07 Pass 2 nd Qual. >4.68E+05 >2.00E+06 1.46E+08 6.32E+05 >2.20E+05 >1.01E+05 1.59E+04 3.71E+06 Pass 3 rd Qual. >5.90E+05 >6.76E+06 1.32E+07 4.14E+05 >4.38E+05 >1.55E+05 3.23E+04 1.21E+07 Pass 3. BT: DC(years ) Pf L=0.08 Pftk Pass/ Fail L=0.14 1 st Qual. 5.87E+01 1.51E+02 Pass 2 nd Qual. 2.80E+01 2.99E+01 Pass 3 rd Qual. 7.29E+01 8.87E+01 Pass 4. EM: Lot Lot#1 Lot#2 Lot#3 5. SM: Structure Ea n Stress Condition Lifetime T(C) Current ( mA ) ( Hours ) Pass / Fail C1_us_110 M1 0.80 2.015 235 0.385 1.76E+05 Pass CL_us_250 ML 0.93 1.485 235 4.250 3.27E+05 Pass C1_us_110 C1 0.83 2.203 235 0.320 3.24E+05 Pass CL_us_250 CL 0.94 2.140 235 0.588 5.48E+05 Pass C1_us_110 M1 0.80 2.015 235 0.385 2.10E+05 Pass CL_us_250 ML 0.93 1.485 235 4.250 3.25E+05 Pass C1_us_110 C1 0.83 2.203 235 0.320 3.50E+05 Pass CL_us_250 CL 0.94 2.140 235 0.588 5.44E+05 Pass C1_us_110 M1 0.80 2.015 235 0.385 2.16E+05 Pass CL_us_250 ML 0.93 1.485 235 4.250 3.90E+05 Pass C1_us_110 C1 0.83 2.203 235 0.320 4.06E+05 Pass CL_us_250 CL 0.94 2.140 235 0.588 6.05E+05 Pass Pass. There is no samples with R>10% after 1000hrs stress @250C. 35 Quality and Reliability Report 8.2.3 46nm Process: 300 mm FAB 1. TDDB (years ) Pass/ Ntn Ntk Ptn Ptk Array STCPlate+ STCNode+ Fail 1 st Qual. 3.40E+03 1.16E+01 6.16E+03 1.21E+03 4.01E+01 7.84E+04 3.98E+01 Pass 2 nd Qual. 1.83E+03 1.51E+01 9.15E+03 1.11E+02 6.28E+01 8.51E+03 8.21E+01 Pass 3 rd Qual. 2.30E+04 1.37E+01 5.34E+03 3.57E+02 1.25E+02 8.45E+02 3.59E+01 Pass NFET Pass/ 2. HCE: AC(years ) NFET nf 1 st Qual. 2 nd Qual. 3 rd Qual. nflo L=0.065 L=0.08 3.37E+09 1.77E+10 3.46E+09 3.19E+07 2.30E+07 9.29E+08 AC(years ) L=0.14 2 nd Qual. 3 rd Qual. (years ) 8.76E+01 9.85E+01 5.33E+01 PFET pf L=0.065 1 st Qual. 2 nd Qual. 3 rd Qual. Pass Pass Pass NFET NFET nflotk 1 st Qual. Fail nflotk nflotk L=0.21 pflo nftk nftk L=0.21 L=0.30 Fail L=0.3 L=0.125 3.06E+01 1.71E+01 4.54E+01 3.32E+01 1.25E+01 1.35E+01 Pass 3.39E+01 1.71E+01 1.44E+01 Pass 6.51E+01 2.11E+01 1.49E+01 Pass 3.54E+01 3.88E+01 5.44E+01 PFET nftk Pass/ Pass/ Fail L=0.08 1.04E+10 2.20E+10 Pass 3.06E+09 3.19E+10 Pass 8.72E+09 4.47E+08 Pass 36 Quality and Reliability Report PFET (years ) pflotk L=0.14 PFET pflotk pftk L=0.18 Pass/ pftk L=0.125 Fail L=0.18 1.73E+03 6.78E+03 6.67E+04 4.96E+04 Pass 5.44E+03 1.57E+05 4.27E+05 1.84E+04 Pass 4.33E+03 3.91E+04 8.29E+04 1.20E+03 Pass 1 st Qual. 2 nd Qual. 3 rd Qual. 3. BT: DC(years ) Pf Pftk L=0. 065 L=0.125 1 st Qual. 2 nd Qual. 3 rd Qual. 2.20E+01 1.32E+01 5.49E+01 Pass/ Fail 6.54E+02 Pass 4.10E+02 Pass 7.35E+01 Pass 4. EM: E=0.85 n=1.7 Lot Lot#1 Lot#2 Lot#3 5. SM: Structure Stress Condition Lifetime Pass / Fail T(C) Current ( mA ) ( Hours ) C1us_0.092_M1 235 1.38 1.09E+04 Pass Clus_210_ML 235 12.936 1.33E+03 Pass Clus_110_C1 235 0.786 9.37E+03 Pass Clus_500_CL 235 0.912 2.95E+03 Pass C1us_0.092_M1 235 1.38 2.58E+04 Pass Clus_210_ML 235 12.936 1.26E+03 Pass Clus_110_C1 235 0.786 5.66E+03 Pass Clus_500_CL 235 0.912 5.10E+03 Pass C1us_0.092_M1 235 1.38 3.30E+04 Pass Clus_210_ML 235 12.936 1.29E+03 Pass Clus_110_C1 235 0.786 8.37E+03 Pass Clus_500_CL 235 0.912 6.10E+03 Pass Pass. There is no samples with R>10% after 1000hrs stress @250C. 37