TSM2323

TSM2323
20V P-Channel MOSFET
SOT-23
PRODUCT SUMMARY
VDS (V)
RDS(on)(mΩ)
Pin Definition:
1. Gate
2. Source
3. Drain
-20
Features
ID (A)
39 @ VGS = -4.5V
-4.7
52 @ VGS = -2.5V
-4.1
68 @ VGS = -1.8V
-2.0
Block Diagram
●
Advance Trench Process Technology
●
High Density Cell Design for Ultra Low On-resistance
Application
●
Load Switch
●
PA Switch
P-Channel MOSFET
Ordering Information
Part No.
Package
Packing
TSM2323CX RF
TSM2323CX RFG
SOT-23
SOT-23
3Kpcs / 7” Reel
3Kpcs / 7” Reel
Note: “G” denote for Green Product
Absolute Maximum Rating (Ta = 25oC unless otherwise noted)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
VDS
-20
V
Gate-Source Voltage
VGS
±8
V
Continuous Drain Current, VGS @ 4.5V.
ID
-4.7
A
Pulsed Drain Current, VGS @ 4.5V
IDM
-20
A
IS
-1.0
A
Continuous Source Current (Diode Conduction)
a,b
o
1.25
Ta = 25 C
Maximum Power Dissipation
PD
o
Ta = 70 C
Operating Junction Temperature
Operating Junction and Storage Temperature Range
W
0.8
TJ
+150
o
TJ, TSTG
- 55 to +150
o
Symbol
Limit
C
C
Thermal Performance
Parameter
Junction to Case Thermal Resistance
RӨJC
Junction to Ambient Thermal Resistance (PCB mounted)
RӨJA
Unit
75
o
120
o
C/W
C/W
Notes:
a. Surface Mounted on 1” x 1” FR4 Board.
b. Pulse width limited by maximum junction temperature
1/6
Version: E10
TSM2323
20V P-Channel MOSFET
Electrical Specifications
Parameter
Conditions
Symbol
Min
Typ
Max
Unit
Static
Drain-Source Breakdown Voltage
VGS = 0V, ID = - 250uA
BVDSS
-20
--
--
V
Gate Threshold Voltage
VDS = VGS, ID = - 250uA
VGS(TH)
-0.4
--
-1.0
V
Zero Gate Voltage Drain Current
VDS = -16V, VGS = 0V
IDSS
--
--
-1.0
uA
Gate Body Leakage
VGS = ±8V, VDS = 0V
IGSS
--
--
±100
nA
On-State Drain Current
VDS ≤-5V, VGS = -4.5V
ID(ON)
-20
--
--
A
--
31
39
--
41
52
--
54
68
VGS = -4.5V, ID = -4.7A
Drain-Source On-State Resistance
VGS = -2.5V, ID = -4.1A
RDS(ON)
VGS = -1.8V, ID = -2.0A
mΩ
Forward Transconductance
VDS = - 5V, ID = - 4.7A
gfs
--
16
--
S
Diode Forward Voltage
b
Dynamic
IS = - 1.0A, VGS = 0V
VSD
--
- 0.7
-1.2
V
Qg
--
12.5
19
Qgs
--
1.7
--
Qgd
--
3.3
--
Ciss
--
1020
--
Coss
--
191
--
Crss
--
140
--
td(on)
--
25
40
tr
--
43
65
td(off)
--
71
110
--
48
75
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching
VDS = -10V, ID = -4.7A,
VGS = -4.5V
VDS = -10V, VGS = 0V,
f = 1.0MHz
nC
pF
b,C
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
VDD = -10V, RL = 10Ω,
ID = -1A, VGEN = -4.5V,
RG = 6Ω
Turn-Off Fall Time
tf
Notes:
a. pulse test: PW ≤300µS, duty cycle ≤2%
b. Guaranteed by design of component.
c. Switching time is essentially independent of operating temperature.
2/6
nS
Version: E10
TSM2323
20V P-Channel MOSFET
Electrical Characteristics Curve (Ta = 25oC, unless otherwise noted)
Output Characteristics
Transfer Characteristics
On-Resistance vs. Drain Current
Gate Charge
On-Resistance vs. Junction Temperature
Source-Drain Diode Forward Voltage
3/6
Version: E10
TSM2323
20V P-Channel MOSFET
Electrical Characteristics Curve (Ta = 25oC, unless otherwise noted)
On-Resistance vs. Gate-Source Voltage
Threshold Voltage
Single Pulse Power
Normalized Thermal Transient Impedance, Junction-to-Ambient
4/6
Version: E10
TSM2323
20V P-Channel MOSFET
SOT-23 Mechanical Drawing
DIM
A
A1
B
C
D
E
F
G
H
I
J
SOT-23 DIMENSION
MILLIMETERS
INCHES
MIN
MAX
MIN
MAX.
0.95 BSC
0.037 BSC
1.9 BSC
0.074 BSC
2.60
3.00
0.102
0.118
1.40
1.70
0.055
0.067
2.80
3.10
0.110
0.122
1.00
1.30
0.039
0.051
0.00
0.10
0.000
0.004
0.35
0.50
0.014
0.020
0.10
0.20
0.004
0.008
0.30
0.60
0.012
0.024
5º
10º
5º
10º
Marking Diagram
23 = Device Code
Y = Year Code
M = Month Code
(A=Jan, B=Feb, C=Mar, D=Apl, E=May, F=Jun, G=Jul, H=Aug,
I=Sep, J=Oct, K=Nov, L=Dec)
= Month Code for Halogen Free Product
(O=Jan, P=Feb, Q=Mar, R=Apl, S=May, T=Jun, U=Jul, V=Aug,
W=Sep, X=Oct, Y=Nov, Z=Dec)
L = Lot Code
5/6
Version: E10
TSM2323
20V P-Channel MOSFET
Notice
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assumes no responsibility or liability for any errors or inaccuracies.
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6/6
Version: E10