TSC742 High Voltage NPN Transistor TO-220 PRODUCT SUMMARY Pin Definition: 1. Base 2. Collector 3. Emitter BVCEO 420V BVCBO 1050V IC VCE(SAT) Features 5A 0.5V @ IC=1A, IB=0.2A Block Diagram ● High Voltage Capability ● High Switching Speed Structure ● Silicon Triple Diffused Type ● NPN Silicon Transistor Ordering Information Part No. TSC742CZ C0 Package Packing TO-220 50pcs / Tube Absolute Maximum Rating (TA = 25oC, unless otherwise noted) Parameter Symbol Limit Unit Collector-Base Voltage VCBO 1050 V Collector-Emitter Voltage @ VBE=0V VCES 420 V Emitter-Base Voltage VEBO 15 V Collector Current IC 5 A Collector Peak Current (tp <5ms) ICM 8 A Base Current IB 2 A Base Peak Current (tp <5ms) IBM 4 A PDTOT 70 Power Total Dissipation @ Tc=25ºC Maximum Operating Junction Temperature +150 TSTG -55 to +150 o Symbol Limit TJ Storage Temperature Range W o C C Note: Single Pulse. PW = 300µs, Duty ≤2% Thermal Performance Parameter Thermal Resistance - Junction to Case RӨJC Thermal Resistance - Junction to Ambient RӨJA 1/4 Unit 1.8 o 62.5 o C/W C/W Version: A14 TSC742 High Voltage NPN Transistor Electrical Specifications (TA = 25oC unless otherwise noted) Parameter Conditions Symbol Min Typ Max Unit Static Collector-Base Voltage IC =0.5mA BVCBO 1050 -- -- V Collector-Emitter Breakdown Voltage IC =5mA BVCEO 420 -- -- V Emitter-Base Breakdown Voltage IE =1mA BVEBO 15 -- -- V Collector Cutoff Current VCE =400V, IB=0 ICEO -- 10 250 µA Collector Cutoff Current VCB =950V, IE =0 ICBO -- -- 10 µA Collector-Emitter Saturation Voltage IC=1A, IB =0.2A VCE(SAT)1 --- 0.15 0.5 V Collector-Emitter Saturation Voltage IC=3.5A, IB =1A VCE(SAT)2 --- 1.2 1.5 V Base-Emitter Saturation Voltage IC=3.5A, IB =1A VBE(SAT)1 -- 1.0 1.5 V 48 70 100 23 28 50 tr -- -- 1 µs tSTG 4.5 5 5.5 µs tf -- -- 1.2 µs DC Current Gain VCE =5V, IC = 0.1A VCE =3V, IC = 0.8A hFE Resistive Load Switching Time (Ratings) Rise Time Storage Time VCC =5V, IC =0.5A, tP =300µs, Fall Time Note: Pulsed duration ≤380µs, duty cycle ≤2% 2/4 Version: A14 TSC742 High Voltage NPN Transistor TO-220 Mechanical Drawing Unit: Millimeters Marking Diagram Y M L = Year Code = Month Code (A=Jan, B=Feb, C=Mar, D=Apl, E=May, F=Jun, G=Jul, H=Aug, I=Sep, J=Oct, K=Nov, L=Dec) = Lot Code 3/4 Version: A14 TSC742 High Voltage NPN Transistor Notice Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. 4/4 Version: A14