TS13007B High Voltage NPN Transistor TO-220 Pin Definition: 1. Base 2. Collector 3. Emitter PRODUCT SUMMARY BVCEO 400V BVCBO 700V IC VCE(SAT) Features 8A 3V @ IC / IB = 8A / 2A Block Diagram ● High Voltage ● High Speed Switching Structure ● Silicon Triple Diffused Type ● NPN Silicon Transistor Ordering Information Part No. TS13007BCZ C0 Package Packing TO-220 50pcs / Tube Absolute Maximum Rating (Ta = 25oC unless otherwise noted) Parameter Symbol Limit Unit Collector-Base Voltage VCBO 700V V Collector-Emitter Voltage VCEO 400V V Emitter-Base Voltage VEBO 9 V Collector Current Base Current DC IC Pulse DC IB Pulse Total Power Dissipation @ TC=25ºC PTOT Operating Junction Temperature TJ Operating Junction and Storage Temperature Range Note: Single Pulse. PW = 300uS, Duty ≤2% TSTG 1/5 8 16 4 8 80 A A W +150 o C - 55 to +150 o C Version: A07 TS13007B High Voltage NPN Transistor Electrical Specifications (Ta = 25oC unless otherwise noted) Parameter Conditions Symbol Min Typ Max Unit Static Collector-Base Voltage IC =1mA, IB =0 BVCBO 700 -- -- V Collector-Emitter Breakdown Voltage IC =10mA, IE =0 BVCEO 400 -- -- V Emitter-Base Breakdown Voltage IE =1mA, IC =0 BVEBO 9 -- -- V Collector Cutoff Current VCE =400V, IB=0 ICEO -- -- 1 mA Collector Cutoff Current VCB =700V, IE =0 ICBO -- -- 1 mA Emitter Cutoff Current VEB = 9V, IC =0 IEBO -- -- 1 mA IC=2A, IB =0.4A VCE(SAT)1 VCE(SAT)2 VCE(SAT)3 ---- ---- 1 1.5 3 V VBE(SAT)1 VBE(SAT)2 --- --- 1.2 1.6 V 20 -- 40 5 -- 30 fT 4 -- -- MHz Cob -- 180 -- pF td -- 0.06 0.1 uS 0.45 1 uS Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage DC Current Gain IC=5A, IB =1A IC=8A, IB =2A IC=2A, IB =0.4A IC=5A, IB =1A VCE =5V, IC = 2A VCE =5V, IC = 5A hFE Dynamic Frequency VCE =10V, IC =0.5A Output Capacitance VCB =10V, f =0.1MHz Resistive Load Switching Time (Ratings) Delay Time Rise Time Storage Time Fall Time VCC =125V, IC =5A, IB1 =IB2=1A, tP =25uS Duty Cycle ≤1% tr tSTG -- 2.8 3 uS tf -- 0.3 0.7 uS Note: pulse test: pulse width �300uS, duty cycle �2% 2/5 Version: A07 TS13007B High Voltage NPN Transistor Electrical Characteristics Curve (Ta = 25oC, unless otherwise noted) Figure 1. Static Characteristics Figure 2. DC Current Gain Figure 3. VCE(SAT) v.s. VBE(SAT Figure 4. Power Derating 3/5 Version: A07 TS13007B High Voltage NPN Transistor TO-220 Mechanical Drawing DIM A B C D E F G H J K L M N O P TO-220 DIMENSION MILLIMETERS INCHES MIN MAX MIN MAX 10.000 10.500 0.394 0.413 3.740 3.910 0.147 0.154 2.440 2.940 0.096 0.116 6.350 0.250 0.381 1.106 0.015 0.040 2.345 2.715 0.092 0.058 4.690 5.430 0.092 0.107 12.700 14.732 0.500 0.581 14.224 16.510 0.560 0.650 3.556 4.826 0.140 0.190 0.508 1.397 0.020 0.055 27.700 29.620 1.060 1.230 2.032 2.921 0.080 0.115 0.255 0.610 0.010 0.024 5.842 6.858 0.230 0.270 Marking Diagram Y M L = Year Code = Month Code (A=Jan, B=Feb, C=Mar, D=Apl, E=May, F=Jun, G=Jul, H=Aug, I=Sep, J=Oct, K=Nov, L=Dec) = Lot Code 4/5 Version: A07 TS13007B High Voltage NPN Transistor Notice Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. 5/5 Version: A07