TSM230N06PQ56 60V N-Channel Power MOSFET PDFN56 Key Parameter Performance Pin Definition: 1. Source 8. Drain 2. Source 7. Drain 3. Source 6. Drain 4. Gate 5. Drain Parameter Value Unit VDS 60 V RDS(on) (max) VGS = 10V 23 VGS = 4.5V 28 Qg Ordering Information ● 28 mΩ nC Block Diagram Part No. Package Packing TSM230N06PQ56 RLG PDFN56 2.5kpcs / 13” Reel Note: “G” denotes for Halogen- and Antimony-free as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds N-Channel MOSFET Absolute Maximum Ratings (Tc = 25℃ unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage VDS 60 V Gate-Source Voltage VGS ±20 V 44 A 28 A IDM 176 A EAS 42 mJ Power Dissipation @ TC = 25℃ PD 83 W Operating Junction Temperature TJ -55 to +150 ℃ TSTG -55 to +150 ℃ Symbol Limit Unit Thermal Resistance - Junction to Case RӨJC 1.5 Thermal Resistance - Junction to Ambient RӨJA 62 Tc = 25℃ Continuous Drain Current Pulsed Drain Current Tc = 100℃ (Note 1) Single Pulse Avalanche Energy (Note 2) Storage Temperature Range ID Thermal Performance Parameter 1/6 ℃/W Version: A14 TSM230N06PQ56 60V N-Channel Power MOSFET Electrical Specifications (TC = 25℃ unless otherwise noted) Parameter Conditions Symbol Min Typ Max Unit BVDSS 60 -- -- V -- 20 23 -- 23 28 1.2 1.8 2.5 -- -- 1 -- -- 10 Static Drain-Source Breakdown Voltage Drain-Source On-State Resistance Gate Threshold Voltage VGS = 0V, ID = 250µA VGS = 10V, ID = 20A VGS = 4.5V, ID = 12A VDS = VGS, ID = 250µA Zero Gate Voltage Drain Current Gate Body Leakage Forward Transconductance (Note 3) VDS = 60V, VGS = 0V VDS = 48V, TJ = 125℃ RDS(on) VGS(TH) IDSS mΩ V µA VGS = ±20V, VDS = 0V IGSS -- -- ±100 nA VDS = 10V, ID = 10A gfs -- 9 -- S Qg -- 28 -- Qgs -- 3.5 -- Qgd -- 6.5 -- Ciss -- 1680 -- Coss -- 115 -- Crss -- 85 -- td(on) -- 7.2 -- tr -- 38 -- td(off) -- 34 -- tf -- 8.2 -- IS -- -- 44 A ISM -- -- 176 A VGS = 0V, IS = 1A VSD -- -- 1 V VGS = 0V, IS = 1A dIF/dt = 100A/µs trr -- 19.6 -- ns Qrr -- 14.2 -- nC Dynamic Total Gate Charge (Note 3,4) Gate-Source Charge Gate-Drain Charge (Note 3,4) (Note 3,4) VDS = 30V, ID = 15A, VGS = 10V Input Capacitance VDS = 20V, VGS = 0V, f = 1.0MHz Output Capacitance Reverse Transfer Capacitance nC pF Switching Turn-On Delay Time (Note 3,4) Turn-On Rise Time (Note 3,4) Turn-Off Delay Time (Note 3,4) VDD = 30V, ID = 1A, VGS = 10V, RG =6Ω Turn-Off Fall Time (Note 3,4) ns Source-Drain Diode Ratings and Characteristic Maximum Continuous Drain-Source Diode Forward Current Maximum Pulse Drain-Source Diode Forward Current Diode-Source Forward Voltage Reverse Recovery Time (Note 3) Reverse Recovery Charge (Note 3) Integral reverse diode in the MOSFET Note: 1. Pulse width limited by safe operating area 2. L = 0.1mH, IAS = 29A, VDD = 25V, RG = 25Ω, Starting TJ = 25℃ 3. Pulse test: pulse width ≤ 300µs, duty cycle ≤ 2% 4. Switching time is essentially independent of operating temperature. 2/6 Version: A14 TSM230N06PQ56 60V N-Channel Power MOSFET Electrical Characteristics Curve RDS(on) vs. Continuous Drain Current RDS(on), On Resistance (mW) ID, Continuous Drain Current (A) Continuous Drain Current vs. TC ID, Continuous Drain Current (A) Capacitance Gate Charge C, Capacitance (pF) VGS, Gate to Source Voltage (V) TC, Case Temperature (℃) Qg, Gate Charge (nC) VDS, Drain to Source Voltage (V) Threshold Voltage vs. Junction Temperature Normalized On Resistance (mW) Normalized Gate Threshold Voltage (V) On-Resistance vs. Junction Temperature TJ, Junction Temperature (℃) TJ, Junction Temperature (℃) 3/6 Version: A14 TSM230N06PQ56 60V N-Channel Power MOSFET Electrical Characteristics Curve Maximum Safe Operating Area ID, Continuous Drain Current (A) Normalized Thermal Response (RθJC) Normalized Thermal Transient Impedance Curve VDS, Drain to Source Voltage (V) Square Wave Pulse Duration (s) 4/6 Version: A14 TSM230N06PQ56 60V N-Channel Power MOSFET PDFN56 Mechanical Drawing Unit: Millimeters Marking Diagram Y = Year Code M = Month Code for Halogen Free Product (O=Jan, P=Feb, Q=Mar, R=Apl, S=May, T=Jun, U=Jul, V=Aug, W=Sep, X=Oct, Y=Nov, Z=Dec) L = Lot Code 5/6 Version: A14 TSM230N06PQ56 60V N-Channel Power MOSFET Notice Specifications of the products displayed herein are subject to change without notice. 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