TSM480P06 60V P-Channel Power MOSFET TO-251S (IPAK) TO-252 (DPAK) Key Parameter Performance Pin Definition: 1. Gate 2. Drain 3. Source Parameter Value Unit VDS -60 V RDS(on) (max) VGS = -10V 48 VGS = -4.5V 65 Qg 22.4 nC Block Diagram Ordering Information Part No. mΩ Package Packing TO-251S 75pcs / Tube TSM480P06CH C5G TSM480P06CP ROG TO-252 2.5kpcs / 13” Reel Note: “G” denotes for Halogen- and Antimony-free as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds P-Channel MOSFET Absolute Maximum Ratings (TC=25oC unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage VDS -60 V Gate-Source Voltage VGS ±20 V -20 A -13 A IDM -64 A Continuous Drain Current Pulsed Drain Current TC = 25ºC (Note 1) ID TC = 100ºC (Note 2) Single Pulse Avalanche Current (Note 2) IAS -32 A Single Pulse Avalanche Energy (Note 3) EAS 51 mJ Power Dissipation @ TC = 25 C PD 40 W Operating Junction Temperature TJ -50 to +150 ºC TSTG -50 to +150 o Symbol Limit RӨJC 3.1 o 62 o o Storage Temperature Range C Thermal Performance Parameter Thermal Resistance - Junction to Case Thermal Resistance - Junction to Ambient RӨJA 1/7 Unit C/W C/W Version: B14 TSM480P06 60V P-Channel Power MOSFET Electrical Specifications (TC=25oC unless otherwise noted) Parameter Conditions Symbol Min Typ Max Unit BVDSS -60 -- -- V -- 39 48 53 65 -1.2 -1.6 -2.2 -- -- -1 -- -- -10 IGSS -- -- ±100 nA gfs -- 10 -- S Qg -- 22.4 -- Qgs -- 4.1 -- Qgd -- 5.2 -- Ciss -- 1250 -- Coss -- 85 -- Crss -- 65 -- td(on) -- 13 -- tr -- 42.4 -- td(off) -- 64.6 -- tf -- 16.4 -- IS -- -- -16 A ISM -- -- -64 A VSD -- -- -1 V Static Drain-Source Breakdown Voltage VGS = 0V, ID = 250µA VGS = -10V, ID = -8A Drain-Source On-State Resistance Gate Threshold Voltage Zero Gate Voltage Drain Current VGS = -4.5V, ID = -4A VDS = VGS, ID = -250µA RDS(ON) VGS(TH) VDS = -60V, VGS = 0V IDSS VDS = -48V, TC = 125ºC Gate Body Leakage VGS = ±20V, VDS = 0V Forward Transconductance (Note 4) VDS = -10V, ID = -8A mΩ V µA Dynamic Total Gate Charge (Note 4,5) Gate-Source Charge Gate-Drain Charge (Note 4,5) (Note 4,5) VDS = -30V, ID = -8A, VGS = -10V Input Capacitance VDS = -30V, VGS = 0V, f = 1.0MHz Output Capacitance Reverse Transfer Capacitance nC pF Switching Turn-On Delay Time (Note 4,5) Turn-On Rise Time (Note 4,5) Turn-Off Delay Time Turn-Off Fall Time (Note 4,5) VDD = -30V, ID = -1A, RGEN =6Ω (Note 4,5) ns Source-Drain Diode Ratings and Characteristic Maximum Continuous Drain-Source Diode Forward Current Maximum Pulse Drain-Source Diode Forward Current Diode-Source Forward Voltage Integral reverse diode in the MOSFET VGS = 0V, IS = -1A Note: 1. Limited by maximum junction temperature 2. Pulse width limited by safe operating area 3. L=3.68mH, IAS=8A, VDD=50V, RG=25Ω, Starting TJ=25ºC 4. Pulse test: pulse width ≤300µs, duty cycle ≤2% 5. Switching time is essentially independent of operating temperature. 2/7 Version: B14 TSM480P06 60V P-Channel Power MOSFET Electrical Characteristics Curve Normalized Rds(on) vs. Tj Normalized On Resistance -ID , Continuous Drain Current (A) Continuous Drain Current vs. Tc TJ , Junction Temperature (ºC) Normalized Vth vs. Tj Gate Charge Waveform -VGS , Gate to Source Voltage (V) Normalized Gate Threshold Voltage TC , Case Temperature (ºC) Qg , Gate Charge (nC) Normalized Transient Impedance (TO-251S) Maximum Safe Operation Area (TO-251S) -ID , Continuous Drain Current (A) Normalized Thermal Response TJ , Junction Temperature (ºC) Square Wave Pulse Duration (s) -VDS , Drain to Source Voltage (V) 3/7 Version: B14 TSM480P06 60V P-Channel Power MOSFET Electrical Characteristics Curve Maximum Safe Operation Area (TO-252) -ID , Continuous Drain Current (A) Normalized Thermal Response Normalized Transient Impedance (TO-252) -VDS , Drain to Source Voltage (V) Square Wave Pulse Duration (s) 4/7 Version: B14 TSM480P06 60V P-Channel Power MOSFET TO-251S Mechanical Drawing Unit: Millimeters Marking Diagram Y = Year Code M = Month Code for Halogen Free Product (O=Jan, P=Feb, Q=Mar, R=Apl, S=May, T=Jun, U=Jul, V=Aug, W=Sep, X=Oct, Y=Nov, Z=Dec) L = Lot Code 5/7 Version: B14 TSM480P06 60V P-Channel Power MOSFET TO-252 Mechanical Drawing Unit: Millimeters Marking Diagram Y = Year Code M = Month Code for Halogen Free Product (O=Jan, P=Feb, Q=Mar, R=Apl, S=May, T=Jun, U=Jul, V=Aug, W=Sep, X=Oct, Y=Nov, Z=Dec) L = Lot Code 6/7 Version: B14 TSM480P06 60V P-Channel Power MOSFET Notice Specifications of the products displayed herein are subject to change without notice. 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