Datasheet (TSM600P03CS)

TSM600P03CS
30V P-Channel Power MOSFET
SOP-8
Key Parameter Performance
Pin Definition:
1. Source
8. Drain
2. Source
7. Drain
3. Source
6. Drain
4. Gate
5. Drain
Parameter
Value
Unit
VDS
-30
V
RDS(on) (max)
VGS = -10V
60
VGS = -4.5V
90
Qg
Ordering Information
Part No.
mΩ
5.1
nC
Block Diagram
Package
Packing
TSM600P03CS RLG
SOP-8
2.5kps / 13’’ Reel
Note: “G” denotes for Halogen- and Antimony-free as those which contain
<900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds
P-Channel MOSFET
Absolute Maximum Ratings (Tc=25oC unless otherwise noted)
Symbol
Limit
Unit
Drain-Source Voltage
VDS
-30
V
Gate-Source Voltage
VGS
±20
V
-4.7
A
-3
A
IDM
-18.8
A
Power Dissipation @ TC = 25 C
PD
2.1
W
Operating Junction Temperature
TJ
150
ºC
TSTG
-55 to +150
Parameter
Tc=25ºC
Continuous Drain Current
Pulsed Drain Current
Tc=100ºC
(Note 1)
o
Storage Temperature Range
ID
o
C
Thermal Performance
Parameter
Thermal Resistance - Junction to Ambient
1/5
Symbol
Limit
RӨJA
50
Unit
o
C/W
Version: A14
TSM600P03CS
30V P-Channel Power MOSFET
Electrical Specifications (TJ=25oC unless otherwise noted)
Parameter
Conditions
Symbol
Min
Typ
Max
Unit
BVDSS
-30
--
--
V
--
44
60
--
73
90
-1.2
-1.6
-2.5
--
--
-1
--
--
-10
Static
Drain-Source Breakdown Voltage
Drain-Source On-State Resistance
Gate Threshold Voltage
VGS = -10V, ID = -3A
VGS = -4.5V, ID = -2A
VDS = VGS, ID = -250µA
Zero Gate Voltage Drain Current
Gate Body Leakage
Forward Transconductance
VGS = 0V, ID = -250µA
(Note 2)
VDS = -30V, TJ = 25ºC
VDS = -24V, TJ = 125ºC
RDS(ON)
VGS(TH)
IDSS
mΩ
V
µA
VGS = ±20V, VDS = 0V
IGSS
--
--
±100
nA
VDS = -10V, ID = -3A
gfs
--
3.5
--
S
Qg
--
5.1
--
Qgs
--
2
--
Qgd
--
2.2
--
Ciss
--
560
--
Coss
--
55
--
Crss
--
40
--
td(on)
--
3.4
--
tr
--
10.8
--
td(off)
--
26.9
--
tf
--
6.9
--
IS
--
--
-4.7
A
ISM
--
--
-18.8
A
VSD
--
--
-1
V
Dynamic
Total Gate Charge (Note 2,3)
Gate-Source Charge
Gate-Drain Charge
(Note 2,3)
(Note 2,3)
VDS = -15V, ID = -3A,
VGS = -4.5V
Input Capacitance
VDS = -15V, VGS = 0V,
Output Capacitance
Reverse Transfer Capacitance
f = 1.0MHz
nC
pF
Switching
Turn-On Delay Time (Note 2,3)
Turn-On Rise Time
(Note 2,3)
Turn-Off Delay Time
Turn-Off Fall Time
(Note 2,3)
VDD = -15V, ID = -1A,
VGS = -10V, RG =6Ω
(Note 2,3)
ns
Source-Drain Diode Ratings and Characteristic
Maximum Continuous Drain-Source
Diode Forward Current
Maximum Pulse Drain-Source Diode
Integral reverse diode in
the MOSFET
Forward Current
Diode-Source Forward Voltage
VGS = 0V, IS = -1A
Note:
1.
Pulse width limited by safe operating area
2.
Pulse test: pulse width ≤300µs, duty cycle ≤2%
3.
Switching time is essentially independent of operating temperature.
2/5
Version: A14
TSM600P03CS
30V P-Channel Power MOSFET
Electrical Characteristics Curve
Continuous Drain Current vs. TC
Gate Charge
On-Resistance vs. Junction Temperature
Threshold Voltage vs. Junction Temperature
Maximum Safe Operating Area
Normalized Thermal Transient Impedance Curve
3/5
Version: A14
TSM600P03CS
30V P-Channel Power MOSFET
SOP-8 Mechanical Drawing
Unit: Millimeters
Marking Diagram
Y
M
L
= Year Code
= Month Code for Halogen Free Product
(O=Jan, P=Feb, Q=Mar, R=Apl, S=May, T=Jun, U=Jul, V=Aug, W=Sep,
X=Oct, Y=Nov, Z=Dec)
= Lot Code
4/5
Version: A14
TSM600P03CS
30V P-Channel Power MOSFET
Notice
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assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, to
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5/5
Version: A14