Datasheet (TSM340N06)

TSM340N06
60V N-Channel Power MOSFET
TO-251S
(IPAK)
IO-252
(DPAK)
Pin Definition:
1. Gate
2. Drain
3. Source
Key Parameter Performance
Parameter
Value
Unit
VDS
60
V
RDS(on) (max)
VGS = 10V
34
VGS = 4.5V
40
Qg
Ordering Information
Part No.
TSM340N06CH C5G
mΩ
16.6
nC
Block Diagram
Package
Packing
TO-251S
75pcs / Tube
TSM340N06CP ROG
TO-252
2.5kpcs / 13” Reel
Note: “G” denotes for Halogen- and Antimony-free as those which contain
<900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds
N-Channel MOSFET
Absolute Maximum Ratings (TC=25oC unless otherwise noted)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
VDS
60
V
Gate-Source Voltage
VGS
±20
V
30
A
19
A
TC=25ºC
Continuous Drain Current
ID
TC=100ºC
(Note 1)
IDM
120
A
Single Pulse Avalanche Energy
(Note 2)
EAS
24
mJ
Single Pulse Avalanche Current
(Note 2)
IAS
22
A
40
W
0.32
W/ºC
TJ
150
ºC
TSTG
-55 to +150
Symbol
Limit
RӨJC
3.1
o
62
o
Pulsed Drain Current
o
Total Power Dissipation
@ TC=25 C
o
Derate above TC=25 C
Operating Junction Temperature
Storage Temperature Range
PD
o
C
Thermal Performance
Parameter
Thermal Resistance - Junction to Case
Thermal Resistance - Junction to Ambient
RӨJA
1/7
Unit
C/W
C/W
Version: B14
TSM340N06
60V N-Channel Power MOSFET
Electrical Specifications (TC=25oC unless otherwise noted)
Parameter
Conditions
Symbol
Min
Typ
Max
Unit
BVDSS
60
--
--
V
--
28
34
--
33
40
1.2
1.7
2.5
--
--
1
--
--
10
IGSS
--
--
±100
nA
gfs
--
8
--
S
Qg
--
16.6
--
Qgs
--
2.2
--
Qgd
--
3.9
--
Ciss
--
1180
--
Coss
--
68
--
Crss
--
45
--
Rg
--
2.1
--
td(on)
--
4.6
--
tr
--
14.8
--
td(off)
--
27.2
--
tf
--
7.8
--
IS
--
--
25
A
ISM
--
--
100
A
VGS = 0V, IS = 1A
VSD
--
--
1
V
VGS = 0V, IS = 1A
dIF/dt = 100A/µs
trr
--
17
--
ns
Qrr
--
12
--
nC
Static
Drain-Source Breakdown Voltage
VGS = 0V, ID = 250µA
VGS = 10V, ID = 15A
Drain-Source On-State Resistance
Gate Threshold Voltage
VGS = 4.5V, ID = 10A
VDS = VGS, ID = 250µA
Zero Gate Voltage Drain Current
VDS = 60V, VGS = 0V
VDS = 48V, TJ = 125ºC
Gate Body Leakage
VGS = ±20V, VDS = 0V
Forward Transconductance
VDS = 10V, ID = 8A
RDS(ON)
VGS(TH)
IDSS
mΩ
V
µA
Dynamic
Total Gate Charge(Note 3,4)
(Note 3,4)
Gate-Source Charge
(Note 3,4)
Gate-Drain Charge
VDS = 30V, ID = 20A,
VGS = 10V
Input Capacitance
VDS = 30V, VGS = 0V,
f = 1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
VGS=0V, VDS=0V, f=1MHz
nC
pF
Ω
Switching
Turn-On Delay Time(Note 3,4)
(Note 3,4)
Turn-On Rise Time
(Note 3,4)
Turn-Off Delay Time
VDD=30V , VGS=10V ,
RG=6, ID=-1A
Turn-Off Fall Time(Note 3,4)
ns
Source-Drain Diode Ratings and Characteristic
Continuous Drain-Source Diode
VG=VD=0V , Force Current
Pulse Drain-Source Diode
Diode-Source Forward Voltage
(Note 3)
Reverse Recovery Time
(Note 3)
Reverse Recovery Charge
Note:
1. Repetitive Rating : Pulsed width limited by maximum junction temperature.
2. VDD=25V,VGS=10V,L=0.1mH,IAS=22A.,RG=25,Starting TJ=25oC
3. The data tested by pulsed , pulse width ≤300µs, duty cycle ≤2%
4. Essentially independent of operating temperature.
2/7
Version: B14
TSM340N06
60V N-Channel Power MOSFET
Electrical Characteristics Curve
Normalized RDSON vs. TJ
Normalized On Resistance
ID , Continuous Drain Current (A)
Continuous Drain Current vs. Tc
TJ , Junction Temperature (oC)
TC , Case Temperature (oC)
Gate Charge Waveform
VGS , Gate to Source Voltage (V)
Normalized Gate Threshold Voltage
(V)
Normalized Vth vs. TJ
o
Qg , Gate Charge (nC)
Normalized Transient Impedance (TO-251S)
Maximum Safe Operation Area (TO-251S)
Normalized Thermal Response
ID , Continuous Drain Current
(A)
TJ , Junction Temperature ( C)
VDS , Drain to Source Voltage (V)
Square Wave Pulse Duration (s)
3/7
Version: B14
TSM340N06
60V N-Channel Power MOSFET
Electrical Characteristics Curve
Maximum Safe Operation Area (TO-252)
Normalized Thermal Response
ID , Continuous Drain Current
(A)
Normalized Transient Impedance (TO-252)
VDS , Drain to Source Voltage (V)
Square Wave Pulse Duration (s)
4/7
Version: B14
TSM340N06
60V N-Channel Power MOSFET
TO-251S Mechanical Drawing
Unit: Millimeters
Marking Diagram
Y = Year Code
M = Month Code for Halogen Free Product
(O=Jan, P=Feb, Q=Mar, R=Apl, S=May, T=Jun, U=Jul, V=Aug, W=Sep,
X=Oct, Y=Nov, Z=Dec)
L = Lot Code
5/7
Version: B14
TSM340N06
60V N-Channel Power MOSFET
TO-252 Mechanical Drawing
Unit: Millimeters
Marking Diagram
Y = Year Code
M = Month Code for Halogen Free Product
(O=Jan, P=Feb, Q=Mar, R=Apl, S=May, T=Jun, U=Jul, V=Aug, W=Sep,
X=Oct, Y=Nov, Z=Dec)
L = Lot Code
6/7
Version: B14
TSM340N06
60V N-Channel Power MOSFET
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7/7
Version: B14