TSM080N03EPQ56 30V N-Channel Power MOSFET PDFN56 Key Parameter Performance Pin Definition: 1. Source 8. Drain 2. Source 7. Drain 3. Source 6. Drain 4. Gate 5. Drain Parameter Value Unit VDS 30 V RDS(on) (max) VGS = 10V 8 VGS = 4.5V 12.5 Qg Ordering Information Part No. 7.5 mΩ nC Block Diagram Package Packing TSM080N03EPQ56 RLG PDFN56 2.5kpcs / 13” Reel ● Note: “G” denotes for Halogen- and Antimony-free as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds N-Channel MOSFET with ESD protection Absolute Maximum Ratings (Tc = 25℃ unless otherwise noted) Symbol Limit Unit Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS ±20 V 55 A 35 A IDM 220 A EAS 45 mJ Power Dissipation @ TC = 25℃ PD 54 W Operating Junction Temperature TJ -55 to +150 ℃ TSTG -55 to +150 ℃ Symbol Limit Unit Thermal Resistance - Junction to Ambient RӨJA 62 ℃/W Thermal Resistance - Junction to Case RӨJC 2.3 ℃/W Parameter Tc = 25℃ Continuous Drain Current Tc = 100℃ Pulsed Drain Current (Note 1) Single Pulse Avalanche Energy (Note 2) Storage Temperature Range ID Thermal Performance Parameter 1/6 Version: A14 TSM080N03EPQ56 30V N-Channel Power MOSFET Electrical Specifications (TC = 25℃ unless otherwise noted) Parameter Conditions Symbol Min Typ Max Unit BVDSS 30 -- -- V -- 6.5 8 -- 9.5 12.5 1 1.6 2.5 -- -- 1 -- -- 10 Static Drain-Source Breakdown Voltage Drain-Source On-State Resistance Gate Threshold Voltage VGS = 0V, ID = 250µA VGS = 10V, ID = 16A VGS = 4.5V, ID = 8A VDS = VGS, ID = 250µA RDS(on) VGS(TH) VDS = 30V, VGS = 0V mΩ V Zero Gate Voltage Drain Current VDS = 24V, VGS = 0V, TJ = 125℃ IDSS Gate Body Leakage VGS = ±20V, VDS = 0V IGSS -- -- ±10 nA gfs -- 14 -- S Qg -- 7.5 -- Qgs -- 1.3 -- Qgd -- 4.5 -- Ciss -- 750 -- Coss -- 150 -- Crss -- 110 -- td(on) -- 4.8 -- tr -- 12.5 -- td(off) -- 27.6 -- tf -- 8.2 -- IS -- -- 55 A ISM -- -- 220 A Diode-Source Forward Voltage VGS = 0V, IS = 1A VSD Note: 1. Pulse width limited by safe operating area 2. L = 0.1mH, IAS = 30A, VDD = 25V, RG = 25Ω, Starting TJ = 25℃ 3. Pulse test: pulse width ≤ 300µs, duty cycle ≤ 2% 4. Switching time is essentially independent of operating temperature. -- -- 1 V Forward Transconductance (Note 3) VDS = 10V, ID = 8A µA Dynamic Total Gate Charge (Note 3,4) Gate-Source Charge Gate-Drain Charge (Note 3,4) (Note 3,4) VDS = 15V, ID = 20A, VGS = 4.5V Input Capacitance VDS = 25V, VGS = 0V, f = 1.0MHz Output Capacitance Reverse Transfer Capacitance nC pF Switching Turn-On Delay Time (Note 3,4) Turn-On Rise Time (Note 3,4) Turn-Off Delay Time Turn-Off Fall Time (Note 3,4) VDD = 15V, ID = 15A, VGS = 10V, RGEN =3.3Ω (Note 3,4) ns Source-Drain Diode Ratings and Characteristic Maximum Continuous Drain-Source Diode Forward Current Maximum Pulse Drain-Source Diode Forward Current Integral reverse diode in the MOSFET 2/6 Version: A14 TSM080N03EPQ56 30V N-Channel Power MOSFET Electrical Characteristics Curves Normalized RDS(on) vs. T J Normalized On Resistance ID, Continuous Drain Current (A) Continuous Drain Current vs. Tc TC, Case Temperature (℃) TJ, Junction Temperature (℃) Gate Charge Waveform VGS, Gate to Source Voltage (V) Normalized Gate Threshold Voltage Normalized Vth vs. TJ Qg, Gate Charge (nC) Normalized Transient Impedance Maximum Safe Operation Area ID, Continuous Drain Current (A) Normalized Thermal Response TJ, Junction Temperature (℃) VDS, Drain to Source Voltage (V) Square Wave Pulse Duration (s) 3/6 Version: A14 TSM080N03EPQ56 30V N-Channel Power MOSFET PDFN56 Mechanical Drawing Unit: Millimeters Marking Diagram Y = Year Code M = Month Code for Halogen Free Product (O=Jan, P=Feb, Q=Mar, R=Apl, S=May, T=Jun, U=Jul, V=Aug, W=Sep, X=Oct, Y=Nov, Z=Dec) L = Lot Code 4/6 Version: A14 TSM080N03EPQ56 30V N-Channel Power MOSFET Notice Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. 5/6 Version: A14 TSM080N03EPQ56 30V N-Channel Power MOSFET The products shown herein are not designed for use in medical, life-saving, or lifesustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. 6/6 Version: A14