Datasheet (TSM080N03EPQ56)

TSM080N03EPQ56
30V N-Channel Power MOSFET
PDFN56
Key Parameter Performance
Pin Definition:
1. Source
8. Drain
2. Source
7. Drain
3. Source
6. Drain
4. Gate
5. Drain
Parameter
Value
Unit
VDS
30
V
RDS(on) (max)
VGS = 10V
8
VGS = 4.5V
12.5
Qg
Ordering Information
Part No.
7.5
mΩ
nC
Block Diagram
Package
Packing
TSM080N03EPQ56 RLG
PDFN56
2.5kpcs / 13” Reel
● Note: “G” denotes for Halogen- and Antimony-free as those which
contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl)
and <1000ppm antimony compounds
N-Channel MOSFET with ESD protection
Absolute Maximum Ratings (Tc = 25℃ unless otherwise noted)
Symbol
Limit
Unit
Drain-Source Voltage
VDS
30
V
Gate-Source Voltage
VGS
±20
V
55
A
35
A
IDM
220
A
EAS
45
mJ
Power Dissipation @ TC = 25℃
PD
54
W
Operating Junction Temperature
TJ
-55 to +150
℃
TSTG
-55 to +150
℃
Symbol
Limit
Unit
Thermal Resistance - Junction to Ambient
RӨJA
62
℃/W
Thermal Resistance - Junction to Case
RӨJC
2.3
℃/W
Parameter
Tc = 25℃
Continuous Drain Current
Tc = 100℃
Pulsed Drain Current (Note 1)
Single Pulse Avalanche Energy
(Note 2)
Storage Temperature Range
ID
Thermal Performance
Parameter
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Version: A14
TSM080N03EPQ56
30V N-Channel Power MOSFET
Electrical Specifications (TC = 25℃ unless otherwise noted)
Parameter
Conditions
Symbol
Min
Typ
Max
Unit
BVDSS
30
--
--
V
--
6.5
8
--
9.5
12.5
1
1.6
2.5
--
--
1
--
--
10
Static
Drain-Source Breakdown Voltage
Drain-Source On-State Resistance
Gate Threshold Voltage
VGS = 0V, ID = 250µA
VGS = 10V, ID = 16A
VGS = 4.5V, ID = 8A
VDS = VGS, ID = 250µA
RDS(on)
VGS(TH)
VDS = 30V, VGS = 0V
mΩ
V
Zero Gate Voltage Drain Current
VDS = 24V, VGS = 0V,
TJ = 125℃
IDSS
Gate Body Leakage
VGS = ±20V, VDS = 0V
IGSS
--
--
±10
nA
gfs
--
14
--
S
Qg
--
7.5
--
Qgs
--
1.3
--
Qgd
--
4.5
--
Ciss
--
750
--
Coss
--
150
--
Crss
--
110
--
td(on)
--
4.8
--
tr
--
12.5
--
td(off)
--
27.6
--
tf
--
8.2
--
IS
--
--
55
A
ISM
--
--
220
A
Diode-Source Forward Voltage
VGS = 0V, IS = 1A
VSD
Note:
1.
Pulse width limited by safe operating area
2.
L = 0.1mH, IAS = 30A, VDD = 25V, RG = 25Ω, Starting TJ = 25℃
3.
Pulse test: pulse width ≤ 300µs, duty cycle ≤ 2%
4.
Switching time is essentially independent of operating temperature.
--
--
1
V
Forward Transconductance
(Note 3)
VDS = 10V, ID = 8A
µA
Dynamic
Total Gate Charge (Note 3,4)
Gate-Source Charge
Gate-Drain Charge
(Note 3,4)
(Note 3,4)
VDS = 15V, ID = 20A,
VGS = 4.5V
Input Capacitance
VDS = 25V, VGS = 0V,
f = 1.0MHz
Output Capacitance
Reverse Transfer Capacitance
nC
pF
Switching
Turn-On Delay Time (Note 3,4)
Turn-On Rise Time
(Note 3,4)
Turn-Off Delay Time
Turn-Off Fall Time
(Note 3,4)
VDD = 15V, ID = 15A,
VGS = 10V, RGEN =3.3Ω
(Note 3,4)
ns
Source-Drain Diode Ratings and Characteristic
Maximum Continuous Drain-Source
Diode Forward Current
Maximum Pulse Drain-Source Diode
Forward Current
Integral reverse diode in
the MOSFET
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Version: A14
TSM080N03EPQ56
30V N-Channel Power MOSFET
Electrical Characteristics Curves
Normalized RDS(on) vs. T J
Normalized On Resistance
ID, Continuous Drain Current (A)
Continuous Drain Current vs. Tc
TC, Case Temperature (℃)
TJ, Junction Temperature (℃)
Gate Charge Waveform
VGS, Gate to Source Voltage (V)
Normalized Gate Threshold Voltage
Normalized Vth vs. TJ
Qg, Gate Charge (nC)
Normalized Transient Impedance
Maximum Safe Operation Area
ID, Continuous Drain Current
(A)
Normalized Thermal Response
TJ, Junction Temperature (℃)
VDS, Drain to Source Voltage (V)
Square Wave Pulse Duration (s)
3/6
Version: A14
TSM080N03EPQ56
30V N-Channel Power MOSFET
PDFN56 Mechanical Drawing
Unit: Millimeters
Marking Diagram
Y = Year Code
M = Month Code for Halogen Free Product
(O=Jan, P=Feb, Q=Mar, R=Apl, S=May, T=Jun, U=Jul, V=Aug, W=Sep,
X=Oct, Y=Nov, Z=Dec)
L = Lot Code
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Version: A14
TSM080N03EPQ56
30V N-Channel Power MOSFET
Notice
Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf,
assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, to
any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of
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merchantability, or infringement of any patent, copyright, or other intellectual property right.
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Version: A14
TSM080N03EPQ56
30V N-Channel Power MOSFET
The products shown herein are not designed for use in medical, life-saving, or lifesustaining applications. Customers using or selling these products for use in such applications do so at their own
risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale.
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Version: A14