Datasheet - Taiwan Semiconductor

ESH1JM
Taiwan Semiconductor
CREAT BY ART
FEATURES
Surface Mount Ultrafast Rectifiers
- Very low profile - typical height of 0.68mm
- Reduce switching and conduction loss
- Ideal for automated placement
- Ultrafast recovery times for high frequency
- Moisture sensitivity level: level 1, per J-STD-020
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21 definition
APPLICATION
Micro SMA
ESH1JM is ideal device for the compact space PCB design.
Specially as boost diode in power factor correction circuitry.
The device is also intended for use as a free wheeling diode in power supplies
For chargers, LED lighting, and other power switching applications.
MECHANICAL DATA
Case: Micro SMA
Molding compound, UL flammability classification rating 94V-0
Base P/N with suffix "G" on packing code - halogen-free, RoHS compliant
Terminal: Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 1A whisker test
Polarity: Indicated by cathode band
Weight: 0.006g (approximately)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25℃ unless otherwise noted)
PARAMETER
ESH1JM
SYMBOL
Marking code
UNIT
D7
Maximum repetitive peak reverse voltage
VRRM
600
V
Maximum average forward rectified current
IF(AV)
1
A
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load
IFSM
15
A
Maximum instantaneous forward voltage (Note 1)
@1A
VF
TYP.
MAX.
1.25
1.5
TYP.
MAX.
-
1
5
50
V
Maximum reverse current @ rated VR
TJ=25 ℃
TJ=125 ℃
IR
Maximum reverse recovery time (Note 2)
Trr
25
ns
Typical junction capacitance (Note 3)
Cj
3
pF
RθJM
RθJA
40
92
TJ
-55 to +150
O
C
TSTG
-55 to +150
O
C
Typical thermal resistance (Note 4)
Operating junction temperature range
Storage temperature range
μA
O
C/W
Note 1: Pulse test with PW=300 μsec, 1% duty cycle
Note 2: Reverse Recovery Test Conditions: IF=0.5A, IR=1.0A, IRR=0.25A
Note 3: Measured at 1 MHz and Applied Reverse Voltage of 4.0 V DC
Note 4: Thermal resistance RθJA - from junction to ambient, RθJM - and junction to mount
Document Number:DS_D1311039
Version:A13
ESH1JM
Taiwan Semiconductor
ORDERING INFORMATION
PART NO.
PACKING CODE
GREEN COMPOUND
PACKAGE
PACKING
RS
CODE
Suffix "G"
Micro SMA
3000 / 7" Plastic reel
ESH1JM
Note: For Micro SMA: Packing code (Whole series with green compound)
EXAMPLE
PREFERRED P/N
PART NO. PACKING CODE
ESH1JM RSG
GREEN COMPOUND
CODE
G
RS
ESH1JM
DESCRIPTION
Green compound
RATINGS AND CHARACTERISTICS CURVES
FIG.1 MAXIMUM FORWARD CURRENT
DERATING CURVE
1.2
FIG. 2 MAXIMUM FORWARD SURGE CURRENT
1
0.8
0.6
0.4
RESISTIVE OR
INDUVTIVE LOAD
0.2
0
0
25
50
75
100
LEAD TEMPERATURE
125
150
175
PEAK FORWARD SURAGE CURRENT
(A)
AVERAGE FORWARD CURRENT (A)
(TA=25℃ unless otherwise noted)
15
8.3ms Single Half Sine-Wave
10
5
0
1
10
(oC)
NUMBER OF CYCLES AT 60 Hz
FIG. 3 TYPICAL FORWARD CHARACTERISTICS
FIG. 4- TYPICAL REVERSE CHARACTERISTICS
10
INSTANTANEOUS REVERSE CURRENT
(uA)
10
INSTANTANEOUS FORWARD CURRENT
(A)
100
TJ=125℃
1
TJ=25℃
1
TJ=125℃
0.1
0.01
TJ=25℃
0.001
0.1
0
0.2 0.4 0.6 0.8
1
1.2 1.4 1.6 1.8
FORWARD VOLTAGE (V)
Document Number:DS_D1311039
2
2.2 2.4
0
20
40
60
80
100
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
Version:A13
ESH1JM
Taiwan Semiconductor
PACKAGE OUTLINE DIMENSIONS
DIM.
Unit (mm)
Unit (inch)
Min
Max
Min
Max
A
2.30
2.70
0.091
0.106
B
2.10
2.30
0.083
0.091
C
0.63
0.73
0.025
0.029
D
0.10
0.20
0.004
0.008
E
1.15
1.35
0.045
0.053
F
0.65
0.85
0.026
0.034
G
1.15
1.35
0.045
0.053
H
0.75
0.95
0.030
0.037
I
1.10
1.50
0.043
0.059
J
0.55
0.75
0.022
0.030
K
0.55
0.75
0.022
0.030
L
0.65
0.85
0.026
0.034
SUGGESTED PAD LAYOUT
Symbol
A
B
C
D
E
Unit (mm)
1.1
2.0
0.5
0.8
1.0
MARKING DIAGRAM
P/N =
Marking code
YW =
Date Code
Document Number:DS_D1311039
Version:A13