TSP15U50S Taiwan Semiconductor Trench MOS Barrier Schottky Rectifier FEATURES - Patented Trench MOS Barrier Schottky technology - Excellent high temperature stability - Low forward voltage - Lower power loss/ High efficiency - High forward surge capability - Ideal for automated placement - Moisture sensitivity level : level 1, per J-STD-020 - Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC TO-277A(SMPC) - Halogen-free according to IEC 61249-2-21 definition MECHANICAL DATA Case：TO-277A(SMPC) Molding compound, UL flammability classification rating 94V-0 Base P/N with suffix "G" on packing code - halogen-free, RoHS compliant Terminal：Matte tin plated leads, solderable per JESD22-B102 Meet JESD 201 class 1A whisker test Polarity：Indicated by cathode band Weight： 0.095 gram (approximately) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS(TA=25oC unless otherwise noted) PARAMETER TSP15U50S Symbol Marking code UNIT 15U50 Maximum repetitive peak reverse voltage VRRM 50 V Maximum average forward rectified current IF(AV) 15 A Peak forward surge current, 8.3 ms single half sine-wave superimposed on rated load per diode IFSM 200 A Maximum instantaneous forward voltage per diode (Note 1) MIN TYP MAX IF = 5A - 0.37 - IF = 7.5A TJ = 25°C - 0.40 - - 0.48 0.56 IF = 5A - 0.26 - IF = 7.5A TJ = 125°C - 0.31 - IF = 15A - 0.44 0.50 - 140 2000 uA - 60 140 mA VF IF = 15A Maximum instantaneous reverse current per diode at rated reverse voltage TJ = 25°C TJ = 125°C IR V Maximum DC reverse voltage VDC 35 Typical thermal resistance per diode RθjC 11 TJ - 40 to + 150 O C - 40 to + 150 O C Operating temperature range Storage temperature range TSTG V O C/W Note1 : Pulse Test with Pulse Width=300μs, 1% Duty Cycle Document Number：DS_D1309033 Version:A13 TSP15U50S Taiwan Semiconductor ORDERING INFORMATION GREEN COMPOUND PACKING CODE PART NO. CODE S1 TSP15U50S Suffix "G" S2 PACKAGE PACKING SMPC 1500/ 7" Plastic reel SMPC 6000/ 13" Plastic reel Note : For SMPC: Packing code (Whole series with green compound) EXAMPLE PREFERRED P/N TSP15U50S S1G PART NO. PACKING CODE TSP15U50S S1 GREEN COMPOUND DESCRIPTION CODE Green compound G RATINGS AND CHATACTERISTICS CURVES (TA=25oC unless otherwise noted) FIG.1 FORWARD CURRENT DERATING CURVE FIG. 2 TYPICAL FORWARD CHARACTERISTICS 100 INSTANTANEOUS FORWARD CURRENT (A) AVERAGE FORWARD CURRENT (A) 20 15 10 5 WITH HEATSINK 30mm x 30mm 4 oz. pad PCB 0 0 25 50 75 100 CASE TEMPERATURE 125 TJ=150oC 10 TJ=125oC 1 TJ=100oC 0.1 TJ=25oC 0.01 150 0 0.4 0.6 0.8 FORWARD VOLTAGE (V) FIG. 3 TYPICAL REVERSE CHARACTERISTICS FIG. 4 TYPICAL JUNCTION CAPACITANCE 100 10000 TJ=125oC 10 TJ=100oC 1 CAPACITANCE (pF) INSTANTANEOUS REVERSE CURRENT (mA) 0.2 (oC) TJ=25oC 0.1 1000 0.01 f=1.0MHz Vsig=50mVp-p 0.001 0.0001 10 20 30 40 50 60 70 80 PERCENT OF RATED PEAK REVERSE VOLTAGE.(%) Document Number：DS_D1309033 90 100 100 0.1 1 10 100 REVERSE VOLTAGE (V) Version:A13 TSP15U50S Taiwan Semiconductor PACKAGE OUTLINE DIMENSIONS DIM. Unit(mm) Unit(inch) Min Max Min Max A 5.650 5.750 0.222 0.226 B 6.350 6.650 0.250 0.262 C 4.550 4.650 0.179 0.183 D 3.540 3.840 0.139 0.151 E 4.235 4.535 0.167 0.179 F 1.850 2.150 0.073 0.085 G 3.170 3.470 0.125 0.137 H I 1.043 1.000 1.343 1.300 0.041 0.039 0.053 0.051 J 1.930 2.230 0.076 0.088 K 0.175 0.325 0.007 0.013 L 1.000 1.200 0.039 0.047 SUGGESTED PAD LAYOUT Symbol A B C D E F Unit(mm) 4.8 4.72 1.4 1.27 6.8 1.04 MARKING DIAGRAM P/N = Marking Code YW = Date Code F = Factory Code Document Number：DS_D1309033 Version:A13