TSSA3U45 Taiwan Semiconductor Trench MOS Barrier Schottky Rectifier FEATURES - Patented Trench MOS Barrier Schottky technology - Low power loss, high efficiency - Ideal for automated placement - Guardring for overvoltage protection - High surge current capability - Moisture sensitivity level: level 1, per J-STD-020 - Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC - Halogen-free according to IEC 61249-2-21 definition MECHANICAL DATA DO-214AC(SMA) Case：DO-214AC(SMA) Molding compound, UL flammability classification rating 94V-0 Base P/N with suffix "G" on packing code - halogen-free, RoHS compliant Terminal：Matte tin plated leads, solderable per JESD22-B102 Meet JESD 201 class 1A whisker test. Polarity：Indicated by cathode band MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS(TA=25oC unless otherwise noted) PARAMETER TSSA3U45 SYMBOL Marking code UNIT 3U45 Maximum repetitive peak reverse voltage VRRM 45 V Maximum average forward rectified current IF(AV) 3 A Peak forward surge current, 8.3 ms single half sine-wave superimposed on rated load per diode IFSM 50 A Maximum instantaneous forward voltage per eiode (Note 1) IF = 3A Maximum instantaneous reverse current per diode at rated reverse voltage Min. TYP. MAX. TJ = 25°C VF - 0.42 0.48 TJ = 125°C VF - 0.30 0.40 - - 500 uA - 50 100 mA TJ = 25°C TJ = 125°C Maximum DC reverse voltage Typical thermal resistance per diode Operating temperature range Storage temperature range IR VDC V 32 V O Rθjc 20 TJ - 55 to + 150 O C - 55 to + 150 O C TSTG C/W Note1 : Pulse Test with Pulse Width=300μs, 1% Duty Cycle Document Number：DS_D1311013 Version:A13 TSSA3U45 Taiwan Semiconductor ORDERING INFORMATION PART NO. GREEN COMPOUND PACKING CODE PACKAGE PACKING Clip SMA 1800 / 7" Plastic reel Clip SMA 7500 / 13" Plastic reel CODE E3 TSSA3U45 Suffix "G" E2 Note : For TMBS: Whole series with green compound EXAMPLE PREFERRED P/N PART NO. PACKING CODE TSSA3U45 E3G TSSA3U45 E3 GREEN COMPOUND DESCRIPTION CODE G Green compound RATINGS AND CHATACTERISTICS CURVES (TA=25oC unless otherwise noted) FIG.1 FORWARD CURRENT DERATING CURVE FIG. 2 TYPICAL FORWARD CHARACTERISTICS 100 INSTANTANEOUS FORWARD CURRENT (A) AVERAGE FORWARD CURRENT (A) 5 4 3 2 1 TL Measured at the Cathode Band terminal 0 0 25 50 75 100 JUNCTION TEMPERATURE 125 10 Tj=125oC 1 Tj=100oC 0.1 Tj=25oC 0.01 150 0 0.1 0.2 (oC) 0.3 0.4 0.5 0.6 FORWARD VOLTAGE (V) FIG. 3 TYPICAL REVERSE CHARACTERISTICS FIG. 4 TYPICAL JUNCTION CAPACITANCE 1000 10000 Tj=150oC 100 Tj=125oC 10 CAPACITANCE (pF) INSTANTANEOUS REVERSE CURRENT (mA) Tj=150oC Tj=100oC 1 0.1 Tj=25oC 0.01 1000 100 f=1.0MHz Vsig=50mVp-p 0.001 0.0001 10 20 30 40 50 60 70 80 PERCENT OF RATED PEAK REVERSE VOLTAGE.(%) Document Number：DS_D1311013 90 100 10 0.1 1 10 100 REVERSE VOLTAGE (V) Version:A13 TSSA3U45 Taiwan Semiconductor PACKAGE OUTLINE DIMENSIONS DIM. Unit(mm) Unit(inch) Min Max Min Max A 1.27 1.58 0.050 0.062 B 4.06 4.60 0.160 0.181 C 2.29 2.83 0.090 0.111 D 1.99 2.50 0.078 0.098 E 0.90 1.41 0.035 0.056 F 4.95 5.33 0.195 0.210 G 0.10 0.20 0.004 0.008 H 0.15 0.31 0.006 0.012 SUGGESTED PAD LAYOUT Symbol A B C D E Unit(mm) 1.68 1.52 3.93 2.41 5.45 MARKING DIAGRAM P/N = Marking Code G= Green Compound YW = Date Code F= Factory Code Document Number：DS_D1311013 Version:A13