TSSE3H45 SERIES_A15

TSSE3H45 - TSSE3H60
Taiwan Semiconductor
3A, 45V - 60V Trench Schottky Rectifiers
FEATURES
- Patented Trench Schottky technology
- Excellent high temperature stability
- Low forward voltage
- Lower power loss/ high efficiency
- High forward surge capability
- Halogen-free according to IEC 61249-2-21 definition
- Moisture sensitivity level: level 1, per J-STD-020
- Compliant to RoHS directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
SOD-123HE
TYPICAL APPLICATIONS
Trench Schottky barrier rectifiers are designed for high
frequency miniature switched mode power supplies such as
adapters, lighting and on-board DC/DC converters, USB power
delivery.
MECHANICAL DATA
Case: SOD-123HE
Molding compound, UL flammability classification rating 94V-0
Part no. with suffix "H" means AEC-Q101 qualified
Packing code with suffix "G" means green compound (halogen-free)
Terminal: Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 2 whisker test
Polarity: Indicated by cathode band
Weight: 0.022 g (approximately)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
PARAMETER
SYMBOL
Marking code
TSSE3H45
TSSE3H60
E3H45
E3H60
UNIT
Maximum repetitive peak reverse voltage
VRRM
45
60
V
Maximum RMS voltage
VRMS
32
42
V
Maximum average forward rectified current
IF(AV)
3
A
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load
IFSM
60
A
Instantaneous forward voltage
(Note 1)
IF = 3A
TJ = 25°C
IF = 3A
TJ = 125°C
Maximum Instantaneous reverse current at rated
reverse voltage
TJ = 25°C
TJ = 125°C
Typical thermal resistance
Operating junction temperature range
Storage temperature range
VF
Typ.
Max.
Typ.
Max.
0.47
0.57
0.50
0.60
0.40
0.50
0.43
0.53
V
100
μA
25
mA
RθJL
20
°C/W
TJ
- 55 to +150
°C
TSTG
- 55 to +150
°C
IR
Note 1: Pulse test with pulse width = 300μs, 1% duty cycle
Document Number: DS_D0000009
Version: A15
TSSE3H45 - TSSE3H60
Taiwan Semiconductor
ORDERING INFORMATION
PART NO.
PART NO.
SUFFIX
TSSE3HXX
(Note 1, 2)
PACKING CODE
PACKING CODE
SUFFIX
RV
H
G
RQ
PACKAGE
PACKING
SOD-123HE
3,000 / 7" Reel
SOD-123HE
10,000 / 13" Reel
Note 1: "XX" defines voltage from 45V (TSSE3H45) to 60V (TSSE3H60)
Note 2: Whole series with green compound (halogen-free)
EXAMPLE
PREFERRED
PART NO.
TSSE3H45HC0G
PART NO.
PART NO.
SUFFIX
TSSE3H45
PACKING CODE
PACKING CODE
H
DESCRIPTION
SUFFIX
C0
AEC-Q101 qualified
Green compound
G
RATINGS AND CHARACTERISTICS CURVES
(TA = 25°C unless otherwise noted)
FIG.2 TYPICAL FORWARD CHARACTERISTICS
FIG.1 FORWARD CURRENT DERATING CURVE
4
INSTANTANEOUS FORWARD CURRENT (A)
AVERAGE FORWARD CURRENT (A)
TSSE3H45
3
2
1
WITH HEATSINK
5mm x 5mm PAD
PCB
0
50
75
10
1
TJ=150oC
0.1
TJ=125oC
TJ=100oC
TJ=25oC
0.01
100
125
0
150
0.2
0.6
0.8
FORWARD VOLTAGE (V)
LEAD TEMPERATURE (oC)
FIG.4 TYPICAL REVERSE CHARACTERISTICS
FIG.3 TYPICAL FORWARD CHARACTERISTICS
100
100
TSSE3H45
INSTANTANEOUS REVERSE CURRENT (mA)
TSSE3H60
INSTANTANEOUS FORWARD CURRENT (A)
0.4
10
1
TJ=150oC
0.1
TJ=125oC
TJ=100oC
TJ=25oC
0.01
0
0.2
0.4
FORWARD VOLTAGE (V)
Document Number: DS_D0000009
0.6
0.8
10
TJ=150oC
TJ=125oC
1
TJ=100oC
0.1
0.01
TJ=25oC
0.001
0.0001
10
20
30
40
50
60
70
80
90
100
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
Version: A15
TSSE3H45 - TSSE3H60
Taiwan Semiconductor
FIG.5 TYPICAL REVERSE CHARACTERISTICS
FIG.6 TYPICAL JUNCTION CAPACITANCE
1000
TSSE3H60
10
TJ=150oC
TJ=125oC
1
CAPACITANCE (pF)
INSTANTANEOUS REVERSE CURRENT (mA)
100
TJ=100oC
0.1
100
0.01
f=1.0MHz
Vslg=50mVp-p
TJ=25oC
0.001
10
20
30
40
50
60
70
80
90
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
Document Number: DS_D0000009
100
10
0.1
1
10
100
REVERSE VOLTAGE (V)
Version: A15
TSSE3H45 - TSSE3H60
Taiwan Semiconductor
PACKAGE OUTLINE DIMENSIONS
SOD-123HE
Unit (mm)
DIM.
Unit (inch)
Min
Max
Min
Max
A
1.65
1.95
0.06
0.08
B
2.60
3.00
0.10
0.12
C
0.85
1.15
0.03
0.05
D
0.75
0.85
0.03
0.03
E
0.10
0.20
0.00
0.01
F
0.55
0.75
0.02
0.03
G
0.35
0.55
0.01
0.02
H
1.90
2.30
0.07
0.09
I
1.35
1.55
0.05
0.06
J
0.95
1.25
0.04
0.05
K
3.50
3.90
0.14
0.15
L
0.35
0.55
0.01
0.02
SUGGESTED PAD LAYOUT
Symbol
Unit (mm)
Unit (inch)
A
1.40
0.055
B
2.40
0.094
C
0.70
0.028
D
0.90
0.035
E
1.40
0.055
MARKING DIAGRAM
P/N
= Marking Code
YW
= Date Code
F
= Factory Code
Document Number: DS_D0000009
Version: A15
TSSE3H45 - TSSE3H60
Taiwan Semiconductor
CREAT BY ART
Notice
Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf,
assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, to
any intellectual property rights is granted by this document. Except as provided in TSC's terms and conditions of
sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty,
relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose,
merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify TSC for any damages resulting from such improper use or sale.
Document Number: DS_D0000009
Version: A15