tesdq5v0_d14 - Taiwan Semiconductor

TESDQ5V0
Taiwan Semiconductor
Small Signal Product
Bi-directional ESD Protection Diode
FEATURES
- Meet IEC61000-4-2 (ESD) ±15kV (air), ±8kV (contact)
- Meet IEC61000-4-4 (EFT) rating. 40A (5/50μs)
- 100W peak pulse power per line (tp=8/20μs)
- Protects one bi-directional I/O line
- Working Voltage: 5V
- Packing code with suffix "G" means
green compound (halogen free)
DFN1006 (0402)
MECHANICAL DATA
- Case: DFN1006 (0402)
- Molding compound flammability rating: UL 94V-0
- Terminal: Gold plated, solderable per
MIL-STD-750, method 2026
- High temperature soldering guaranteed : 260oC/10s
- Weight: 0.5 mg (approximately)
- Marking code: M
APPLICATIONS
-Cell Phone Handsets and Accessories
-Notebooks, Desktops, and Servers
-Keypads, Side Keys, LCD Displays
-Portable Instrumentation
-Touch Panel
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25℃ unless otherwise noted)
PARAMETER
Peak Pulse Power (tp=8/20μs waveform)
ESD per IEC 61000-4-2 (Air)
PARAMETER
Junction Capacitance
KV
±8
o
-55 to +150
C
MIN
MAX
UNIT
VWM
-
5
V
IR = 1 mA
V(BR)
6
-
V
VRWM = 5 V
IR
-
1
μA
-
12.5
-
20
IPP = 1 A
IPP = 2 A
VR = 0 V , f = 1.0 MHz
Document Number: DS_S1412016
W
± 15
SYMBOL
Stand-Off Voltage
Clamping Voltage
UNIT
100
TJ , TSTG
Junction and Storage Temperature Range
Reverse Leakage Current
VALUE
PPP
VESD
ESD per IEC 61000-4-2 (Contact)
Reverse Breakdown Voltage
SYMBOL
VC
CJ
10
V
pF
Version: D14
TESDQ5V0
Taiwan Semiconductor
Small Signal Product
RATINGS AND CHARACTERISTICS CURVES
(TA=25℃ unless otherwise noted)
Fig. 2 Pulse Waveform
Fig. 1 Admissible Power Derating Curve
110
120
100
100
Waveform parameters:
tr = 8 μs , td = 20 μs
90
70
Percent of IPP
Power Rating (%)
80
80
60
40
60
e-1
50
40
td = Ipp / 2
30
20
20
10
0
0
0
20
40
60
80
100
120
Ambient Temperature
140
160
0
180
10
15
20
25
30
Time (us)
Fig. 4 Typical Junction Capacitance
Fig. 3 Max. Clamping Voltage VS. Peak Pulse Current
15
25
20
Normalized Capacitance (pF)
Clamping Voltage, Vc (V)
5
(oC)
15
10
Waveform parameters:
tr = 8 μs , td = 20 μs
5
10
5
f = 1.0 MHz
0
0
0
1
2
3
4
5
0
Peak Pulse Current, Ipp (A)
1
2
3
4
5
Reverse Voltage (V)
Applications Information
◇ Designed to protect one data, I/O, or power supply line
◇ Designed to protect sensitive electronics from damage or latch-up due to ESD
◇ Designed to replace multilayer varistors (MLVs) in portable applications
◇ Features large cross-sectional area junctions for conducting, high transient currents
◇ Offers superior electrical characteristics such as lower clamping voltage and no device degradation when compared to MLV
◇ The combination of small size and high ESD surge capability makes them ideal for use in portable applications
Circuit Board Layout Recommendations
Good circuit board layout is critical for suppresion of ESD induced transients
◇ Place the ESD Protection Diode near the input terminals or connectors to restrict transient
◇ Minimize the path length between the ESD Protection Diode and the protected line
◇ Minimize all conductive loops including power and ground loops
◇ The ESD transient return path to ground should be kept as short as possible
◇ Never run critical signals near board edges
◇ Use ground planes whenever possible
Document Number: DS_S1412016
Version: D14
TESDQ5V0
Taiwan Semiconductor
Small Signal Product
ORDERING INFORMATION
PART NO.
PART NO.
SUFFIX (Note 1)
TESDQ5V0
PACKING CODE
-xx
PACKING CODE
SUFFIX
RJ
G
PACKAGE
PACKING
DFN1006 (0402)
10K / 7" Reel
Note 1: Part No. Suffix „-xx “ would be used for special requirement
EXAMPLE
PREFERRED P/N
PART NO.
TESDQ5V0 RJG
TESDQ5V0
TESDQ5V0-E0 RJG
TESDQ5V0
PART NO.
SUFFIX
PACKING CODE
PACKING CODE
RJ
-E0
DESCRIPTION
SUFFIX
RJ
G
Multiple manufacture
source
Green compound
G
Define manufacture
source
Green compound
PACKAGE OUTLINE DIMENSION
DFN1006 (0402)
DIM.
A
Unit (mm)
Unit (inch)
Min
Max
Min
Max
0.95
1.05
0.037
0.041
B
0.55
0.65
0.022
0.026
C
0.45
0.55
0.018
0.022
D
0.30 TYP.
0.012 TYP.
E
0.50 TYP.
0.020 TYP.
Unit (mm)
Unit (inch)
TYP.
TYP.
X
0.354
0.014
X1
1.110
0.044
Y
0.354
0.014
SUGGEST PAD LAYOUT
DIM.
Document Number: DS_S1412016
Version: D14
TESDQ5V0
Taiwan Semiconductor
Small Signal Product
Notice
Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf,
assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied,to
any intellectual property rights is granted by this document. Except as provided in TSC's terms and conditions of
sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty,
relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose,
merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or seling these products for use in such applications do so at their own risk and agree to fully
indemnify TSC for any damages resulting from such improper use or sale.
Document Number: DS_S1412016
Version: D14