TSM2312 20V N-Channel MOSFET SOT-23 Key Parameter Performance Pin Definition: 1. Gate 2. Source 3. Drain Parameter Value Unit VDS 20 V RDS(on) (max) VGS = 4.5V 33 VGS = 2.5V 40 VGS = 1.8V 51 Qg Features mΩ 11 nC Block Diagram ● Advance Trench Process Technology ● High Density Cell Design for Ultra Low On-resistance Application ● Load Switch ● PA Switch Ordering Information Part No. Package Packing TSM2312CX RFG SOT-23 3,000pcs / 7” Reel Note: “G” denotes for Halogen- and Antimony-free as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds N-Channel MOSFET Absolute Maximum Ratings (TC = 25°C, unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage VDS 20 V Gate-Source Voltage VGS ±8 V ID 4.9 A IDM 15 A IS 1.0 A Continuous Drain Current Pulsed Drain Current (Note 1) Continuous Source Current (Diode Conduction) Maximum Power Dissipation (Note 2) Ta = 25°C PD Ta = 75°C Operating Junction and Storage Temperature Range 0.75 0.48 W TJ, TSTG -55 to +150 °C Symbol Limit Unit Thermal Resistance Junction to Lead RӨJL 75 °C/W Thermal Resistance Junction to Ambient RӨJA 140 °C/W Thermal Performance Parameter Document Number: DS_P0000054 1 Version: E15 TSM2312 20V N-Channel MOSFET Electrical Specifications Parameter Conditions Symbol Min Typ Max Unit (Note 3) Static Drain-Source Breakdown Voltage VGS = 0V, ID = 250uA BVDSS 20 -- -- V Gate Threshold Voltage VDS = VGS, ID = 250uA VGS(TH) 0.45 0.65 1.0 V Gate Body Leakage VGS = ±8V, VDS = 0V IGSS -- -- ±100 nA Zero Gate Voltage Drain Current VDS = 16V, VGS = 0V IDSS -- -- 1.0 μA On-State Drain Current VDS =10V, VGS = 4.5V ID(ON) 15 -- -- A -- 27 33 -- 33 40 -- 42 51 VGS = 4.5V, ID = 4.9A Drain-Source On-State Resistance VGS = 2.5V, ID = 4.4A RDS(ON) VGS = 1.8V, ID = 3.9A mΩ Forward Transconductance VDS = 15V, ID = 5.0A gfs -- 40 -- S Diode Forward Voltage IS = 1.0A, VGS = 0V VSD -- 0.8 1.2 V Qg -- 11 14 Qgs -- 1.5 -- Qgd -- 2.1 -- Ciss -- 500 -- Coss -- 300 -- Crss -- 140 -- td(on) -- 15 25 tr -- 40 60 td(off) -- 48 70 -- 31 45 (Note 4) Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching VDS = 10V, ID = 5.0A, VGS = 4.5V VDS = 10V, VGS = 0V, f = 1.0MHz nC pF (Note 5) Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time VDD = 10V, RL = 10Ω, ID = 1A, VGEN = 4.5V, RG = 6Ω Turn-Off Fall Time tf Notes: 1. Pulse width limited by the maximum junction temperature 2. Surface Mounted on FR4 Board t ≤ 5 sec. 3. Pulse test: PW ≤ 300µs, duty cycle ≤ 2% 4. For DESIGN AID ONLY, not subject to production testing. 5. Switching time is essentially independent of operating temperature. Document Number: DS_P0000054 2 ns Version: E15 TSM2312 20V N-Channel MOSFET Electrical Characteristics Curve Output Characteristics Transfer Characteristics On-Resistance vs. Drain Current Gate Charge On-Resistance vs. Junction Temperature Source-Drain Diode Forward Voltage Document Number: DS_P0000054 3 Version: E15 TSM2312 20V N-Channel MOSFET Electrical Characteristics Curve On-Resistance vs. Gate-Source Voltage Threshold Voltage Single Pulse Power Safety Operation Area Normalized Thermal Transient Impedance, Junction-to-Ambient Document Number: DS_P0000054 4 Version: E15 TSM2312 20V N-Channel MOSFET SOT-23 Mechanical Drawing Unit: Millimeters Marking Diagram 12 = Device Code Y = Year Code M = Month Code for Halogen Free Product O =Jan P =Feb Q =Mar R =Apr S =May T =Jun U =Jul V =Aug W =Sep X =Oct Y =Nov Z =Dec L = Lot Code Document Number: DS_P0000054 5 Version: E15 TSM2312 20V N-Channel MOSFET Notice Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. Document Number: DS_P0000054 6 Version: E15