TSM3446

TSM3446
20V N-Channel MOSFET
SOT-26
PRODUCT SUMMARY
VDS (V)
RDS(on)(mΩ)
Pin Definition:
1. Drain 6. Drain
2. Drain 5, Drain
3. Gate 4. Source
20
Features
ID (A)
33 @ VGS = 4.5V
5.3
40 @ VGS = 2.5V
4.4
Block Diagram
●
Advance Trench Process Technology
●
High Density Cell Design for Ultra Low On-resistance
Application
●
Load Switch
●
PA Switch
Ordering Information
Part No.
Package
Packing
TSM3446CX6 RF
TSM3446CX6 RFG
SOT-26
SOT-26
3Kpcs / 7” Reel
3Kpcs / 7” Reel
N-Channel MOSFET
Note: “G” denote for Halogen Free Product
Absolute Maximum Rating (Ta = 25oC unless otherwise noted)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
VDS
20
V
Gate-Source Voltage
VGS
±12
V
Continuous Drain Current, VGS @4.5V.
ID
5.3
A
Pulsed Drain Current, VGS @4.5V
IDM
20
A
IS
1.7
A
Continuous Source Current (Diode Conduction)
a,b
o
Maximum Power Dissipation
Ta = 25 C
PD
o
Ta = 70 C
Operating Junction Temperature
W
1.3
+150
o
TJ, TSTG
-55 to +150
o
Symbol
Limit
TJ
Operating Junction and Storage Temperature Range
2.0
C
C
Thermal Performance
Parameter
Junction to Case Thermal Resistance
RӨJC
Junction to Ambient Thermal Resistance (PCB mounted)
Notes:
a. Pulse width limited by the Maximum junction temperature
b. Surface Mounted on FR4 Board, t ≤ 5 sec.
1/6
RӨJA
Unit
30
o
80
o
C/W
C/W
Version: D12
TSM3446
20V N-Channel MOSFET
Electrical Specifications
Parameter
Conditions
Symbol
Min
Typ
Max
Unit
Static
Drain-Source Breakdown Voltage
VGS = 0V, ID = 250uA
BVDSS
20
--
--
V
Gate Threshold Voltage
VDS = VGS, ID = 250uA
VGS(TH)
0.5
0.7
1.0
V
Gate Body Leakage
VGS = ±10V, VDS = 0V
IGSS
--
--
±100
nA
Zero Gate Voltage Drain Current
VDS = 16, VGS = 0V
IDSS
--
--
1.0
uA
--
27
33
--
33
40
Drain-Source On-State Resistance
VGS = 4.5V, ID = 5.3A
VGS = 2.5V, ID = 4.4A
RDS(ON)
mΩ
Forward Transconductance
VDS = 10V, ID = 5.3A
gfs
--
20
--
S
Diode Forward Voltage
b
Dynamic
IS = 1A, VGS = 0V
VSD
--
0.7
1.3
V
Qg
--
12.5
--
Qgs
--
0.72
--
Qgd
--
4.3
--
Ciss
--
700
--
Coss
--
125
--
Crss
--
110
--
td(on)
--
4.6
--
tr
--
14
--
td(off)
--
30
--
--
5
--
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching
VDS = 10V, ID = 5.3A,
VGS = 4.5V
VDS = 10V, VGS = 0V,
f = 1.0MHz
nC
pF
c
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
VDD = 10V, RL = 10Ω,
ID = 1A, VGEN = 4.5V,
RG = 6Ω
Turn-Off Fall Time
tf
Notes:
a. pulse test: PW ≤300µS, duty cycle ≤2%
b. For DESIGN AID ONLY, not subject to production testing.
c. Switching time is essentially independent of operating temperature.
2/6
nS
Version: D12
TSM3446
20V N-Channel MOSFET
Electrical Characteristics Curve (Ta = 25oC, unless otherwise noted)
Output Characteristics
Transfer Characteristics
On-Resistance vs. Drain Current
Gate Charge
On-Resistance vs. Junction Temperature
Source-Drain Diode Forward Voltage
3/6
Version: D12
TSM3446
20V N-Channel MOSFET
Electrical Characteristics Curve (Ta = 25oC, unless otherwise noted)
On-Resistance vs. Gate-Source Voltage
Threshold Voltage
Single Pulse Power
Normalized Thermal Transient Impedance, Junction-to-Ambient
4/6
Version: D12
TSM3446
20V N-Channel MOSFET
SOT-26 Mechanical Drawing
DIM
SOT-26 DIMENSION
MILLIMETERS
INCHES
MIN
MIN
TYP
MAX
TYP
A
0.95 BSC
0.0374 BSC
A1
1.9 BSC
MAX
B
2.60
2.80
3.00
0.0748 BSC
0.1024 0.1102 0.1181
C
1.40
1.50
1.70
0.0551
0.0591
0.0669
D
2.80
2.90
3.10
0.1101
0.1142
0.1220
E
1.00
1.10
1.20
0.0394
0.0433
0.0472
F
0.00
--
0.10
0.00
G
0.35
0.40
0.50
0.0138
0.0157
0.0197
H
0.10
0.15
0.20
0.0039
0.0059
0.0079
--
0.0236
--
10º
I
0.30
--
0.60
0.0118
J
5º
--
10º
5º
0.0039
Marking Diagram
46 = Device Code
Y = Year Code
M = Month Code
(A=Jan, B=Feb, C=Mar, D=Apl, E=May, F=Jun, G=Jul, H=Aug,
I=Sep, J=Oct, K=Nov, L=Dec)
= Month Code for Halogen Free Product
(O=Jan, P=Feb, Q=Mar, R=Apl, S=May, T=Jun, U=Jul, V=Aug,
W=Sep, X=Oct, Y=Nov, Z=Dec)
L = Lot Code
5/6
Version: D12
TSM3446
20V N-Channel MOSFET
Notice
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assumes no responsibility or liability for any errors or inaccuracies.
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6/6
Version: D12