TSM2301A

TSM2301A
20V P-Channel MOSFET
SOT-23
Key Parameter Performance
Pin Definition:
1. Gate
2. Source
3. Drain
Parameter
Value
Unit
VDS
-20
V
RDS(on) (max)
VGS = -4.5V
130
VGS = -2.5V
190
mΩ
Qg
Features
7.2
nC
Block Diagram
●
Advance Trench Process Technology
●
High Density Cell Design for Ultra Low On-resistance
Ordering Information
Part No.
Package
Packing
TSM2301ACX RFG
SOT-23
3kpcs / 7” Reel
Note: “G” denotes for Halogen- and Antimony-free as those which contain
<900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds
P-Channel MOSFET
Absolute Maximum Ratings (TA=25oC unless otherwise noted)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
VDS
-20
V
Gate-Source Voltage
VGS
±12
V
ID
-2.8
A
IDM
-10
A
IS
-1
A
Continuous Drain Current
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
(Note 1,2)
o
TA=25 C
Maximum Power Dissipation
0.7
PD
o
TA=70 C
W
0.45
Operating Junction Temperature
Operating Junction and Storage Temperature Range
TJ
+150
o
TJ, TSTG
-55 to +150
o
Symbol
Limit
C
C
Thermal Performance
Parameter
Junction to Ambient Thermal Resistance (PCB mounted)
1/6
RӨJA
175
Unit
o
C/W
Version: B14
TSM2301A
20V P-Channel MOSFET
Electrical Specifications (TC=25oC unless otherwise noted)
Parameter
Static
Conditions
Symbol
Min
Typ
Max
Unit
(Note 3)
Drain-Source Breakdown Voltage
VGS = 0V, ID = 250µA
BVDSS
-20
--
--
V
Gate Threshold Voltage
VDS = VGS, ID = 250µA
VGS(th)
-0.6
-0.7
-1
V
Gate Body Leakage
VGS = ±12V, VDS = 0V
IGSS
--
--
±100
nA
Zero Gate Voltage Drain Current
VDS = -20V, VGS = 0V
IDSS
--
--
1.0
µA
--
90
130
--
120
190
Drain-Source On-State Resistance
Diode Forward Voltage
Dynamic
VGS = -4.5V, ID = -2.8A
VGS = -2.5V, ID = -2.0A
RDS(on)
mΩ
IS = -1A, VGS = 0V
VSD
--
-0.7
-1.3
V
VGS = VDS =0V, f=1MHz
Rg
--
7.5
--
Ω
Qg
--
7.2
--
Qgs
--
2.2
--
Qgd
--
1.2
--
Ciss
--
480
--
Coss
--
460
--
Crss
--
10
--
td(on)
--
38
--
tr
--
25
--
td(off)
--
43
--
--
5
--
(Note 4,5)
Gate Resistance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDS = -6V, ID = -2.8A,
VGS = -4.5V
Input Capacitance
Output Capacitance
VDS = -15V, VGS = 0V,
f = 1.0MHz
Reverse Transfer Capacitance
Switching
nC
pF
(Note 4,5)
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
VDD = -6V, RL = 6Ω,
VGEN = -4.5V,
RG = 6Ω
Turn-Off Fall Time
tf
Notes:
1. Pulse width limited by the Maximum junction temperature
2
2. Surface Mounted on a 1 in pad of 2oz Cu, t≤10 sec.
3. Pulse test: PW ≤300µs, duty cycle ≤2%
4. For DESIGN AID ONLY, not subject to production testing.
5. Switching time is essentially independent of operating temperature.
2/6
ns
Version: B14
TSM2301A
20V P-Channel MOSFET
Electrical Characteristics Curve
Output Characteristics
Transfer Characteristics
On-Resistance vs. Drain Current
Gate Charge
On-Resistance vs. Junction Temperature
Source-Drain Diode Forward Voltage
3/6
Version: B14
TSM2301A
20V P-Channel MOSFET
Electrical Characteristics Curve
On-Resistance vs. Gate-Source Voltage
Threshold Voltage
Single Pulse Power
Normalized Thermal Transient Impedance, Junction-to-Ambient
4/6
Version: B14
TSM2301A
20V P-Channel MOSFET
SOT-23 Mechanical Drawing
Unit: Millimeters
Marking Diagram
1A = Device Code
Y = Year Code
M = Month Code for Halogen Free Product
(O=Jan, P=Feb, Q=Mar, R=Apl, S=May, T=Jun, U=Jul, V=Aug, W=Sep,
X=Oct, Y=Nov, Z=Dec)
L = Lot Code
5/6
Version: B14
TSM2301A
20V P-Channel MOSFET
Notice
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assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, to
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Customers using or selling these products for use in such applications do so at their own risk and agree to fully
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6/6
Version: B14