RTQ040P02 Transistors DC-DC Converter (−20V, −4.0A) RTQ040P02 !External dimensions (Unit : mm) TSMT6 (6) (4) 0.85 (1) Drain (2) Drain (3) Gate (4) Source (5) Drain (6) Drain 0.16 !Applications DC-DC converter 2.9 (5) (2) 0.4 (1) 2.8 1.6 (3) !Features 1) Low on-resistance. (110mΩ at 2.5V) 2) High power package. 3) High speed switching. 4) Low voltage drive. (2.5V) Each lead has same dimensions Abbreviated symbol : TZ !Equivalent circuit !Structure Silicon P-channel MOS FET (6) (5) (4) ∗2 !Packaging specifications Package Type Code Basic ordering unit (pieces) RTQ040P02 ∗1 Taping TR 3000 (1) (2) ∗1 ESD PROTECTION DIODE ∗2 BODY DIODE (3) (1) Drain (2) Drain (3) Gate (4) Source (5) Drain (6) Drain 1/4 RTQ040P02 Transistors !Absolute maximum ratings (Ta=25°C) Parameter Drain-source voltage Gate-source voltage Drain current Source current (Body diode) Continuous Pulsed Continuous Pulsed Total power dissipation Channel temperature Range of Storage temperature Symbol VDSS VGSS ID IDP IS ISP PD Tch Tstg Limits −20 ±12 ±4.0 ±16 −1 −16 1.25 150 −55 to +150 Unit V V A A A A W °C °C ∗1 ∗1 ∗2 ∗1 Pw≤10µs, Duty cycle≤1% ∗2 Mounted on a ceramic board !Electrical characteristics (Ta=25°C) Parameter Symbol Min. IGSS − Gate-source leakage Drain-source breakdown voltage V(BR) DSS −20 Zero gate voltage drain current − IDSS Gate threshold voltage VGS (th) −0.7 − Static drain-source on-state − RDS (on) resistance − 3.5 Yfs Forward transfer admittance − Ciss Input capacitance − Coss Output capacitance − Reverse transfer capacitance Crss − Turn-on delay time td (on) − Rise time tr − Turn-off delay time td (off) − Fall time tf − Total gate charge Qg − Gate-source charge Qgs Gate-drain charge − Qgd Typ. Max. − − − − 35 40 60 − 1350 210 150 15 35 60 30 12.2 2.6 3.4 ±10 − −1 −2.0 50 55 85 − − − − − − − − − − − Unit µA V µA V mΩ mΩ mΩ S pF pF pF ns ns ns ns nC nC nC Conditions VGS=±12V, VDS=0V ID= −1mA, VGS=0V VDS= −20V, VGS=0V VDS= −10V, ID= −1mA ID= −4A, VGS= −4.5V ID= −4A, VGS= −4V ID= −2.0A, VGS= −2.5V VDS= −10V, ID= −2.0A VDS= −10V VGS=0V f=1MHz ID= −2.0A VDD −15V VGS= −4.5V RL=7.5Ω RGS=10Ω VDD −15V RL 3.75Ω VGS= −4.5V RGS=10Ω ID= −4.0A ∗ ∗ ∗ ∗ ∗ ∗ ∗ ∗ ∗Pulsed Body diode characteristics (source-drain characteristics) VSD − − −1.2 Forward voltage V IS= −1A, VGS=0V 2/4 RTQ040P02 Transistors Ta=125°C Ta=75°C Ta=25°C Ta= −25°C 0.1 0.01 0.001 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 10 0.01 0.1 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (mΩ) STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (mΩ) VGS= −4V Pulsed Ta=125°C Ta=75°C Ta=25°C Ta= −25°C 10 0.1 1 Ta=25°C f=1MHz VGS=0V Ciss 10 10 Ta=125°C Ta=75°C Ta=25°C Ta= −25°C 1 0.1 0.01 0.0 Fig.5 Static Drain-Source On-State Resistance vs. Drain Current 10000 Ta=25°C VDD= −15V VGS= −4.5A RG=10Ω Pulsed 1000 tf td (off) 100 tr 10 td (on) Coss 1 VGS=0V Pulsed 100 1 0.01 0.1 1 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 SOURCE-DRAIN VOLTAGE : −VSD (V) Crss 0.1 Fig.3 Static Drain-Source On-State Resistance vs. Drain Current DRAIN CURRENT : −ID (A) SWITCHING TIME : t (ns) CAPACITANCE : C (pF) 1 10 10 Ta=125°C Ta=75°C Ta=25°C Ta= −25°C 10 0.1 Fig.4 Static Drain-Source On-State Resistance vs. Drain Current 100 0.01 1 DRAIN CURRENT : −ID (A) VGS= −2.5V Pulsed 100 10 1000 Ta=125°C Ta=75°C Ta=25°C Ta= −25°C 10 0.1 10 1000 DRAIN CURRENT : −ID (A) 10000 VGS= −4.5V Pulsed 100 Fig.2 Static Drain-Source On-State Resistance vs. Drain Current Fig.1 Typical Transfer Characteristics 100 1 1000 DRAIN CURRENT : −ID (A) GATE-SOURCE VOLTAGE : −VGS (V) 1000 Ta=25°C Pulsed VGS= −2.5V VGS= −4.0V VGS= −4.5V REVERSE DRAIN CURRENT : −IS (A) 1 100 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (mΩ) VDS= −10V Pulsed 10 Fig.6 Reverse Drain Current vs. Source-Drain Voltage 8 GATE-SOURCE VOLTAGE : −VGS (V) DRAIN CURRENT : −ID (A) 10 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (mΩ) !Electrical characteristic curves Ta=25°C VDD= −15V ID= −4A RG=10Ω Pulsed 7 6 5 4 3 2 1 0 0 2 4 6 8 10 12 14 DRAIN-SOURCE VOLTAGE : −VDS (V) DRAIN CURRENT : −ID (A) TOTAL GATE CHARGE : Qg (nC) Fig.7 Typical Capacitance vs. Drain-Source Voltage Fig.8 Switching Characteristics Fig.9 Dynamic Input Characteristics 3/4 RTQ040P02 Transistors !Measurement circuits Pulse Width VGS ID VDS VGS 10% 50% 90% 50% RL 10% D.U.T. 10% RG VDD VDS 90% td(on) 90% td(off) tr ton Fig.10 Switching Time Measurement Circuit tr toff Fig.11 Switching Waveforms VG VGS ID VDS RL IG(Const) D.U.T. Qg VGS Qgs RG Qgd VDD Charge Fig.12 Gate Charge Measurement Circuit Fig.13 Gate Charge Waveforms 4/4 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document use silicon as a basic material. Products listed in this document are no antiradiation design. The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction. Appendix1-Rev1.0