ROHM SP8J3

SP8J3
Transistors
4V Drive Pch+Pch MOS FET
SP8J3
zStructure
Silicon P-channel MOS FET
zExternal dimensions (Unit : mm)
SOP8
5.0
1.75
0.4
(5)
(1)
(4)
0.2
1.27
1pin mark
0.4Min.
3.9
6.0
zFeatures
1) Low On-resistance. (100mΩ at 4.5V)
2) High Power Package. (PD=2.0W)
3) High speed switching.
4) Low voltage drive. (4V)
(8)
Each lead has same dimensions
zApplications
Power switching, DC-DC converter
zPackaging specifications
zInner circuit
(8)
Package
Type
(7)
(6)
(5)
Taping
TB
Code
Basic ordering unit (pieces)
2500
∗2
∗2
SP8J3
∗1
(1)
Continuous
Pulsed
Continuous
Pulsed
Drain current
Source current
(Body diode)
Total power dissipation
Channel temperature
Range of Storage temperature
(2)
(3)
∗1 ESD PROTECTION DIODE
∗2 BODY DIODE
zAbsolute maximum ratings (Ta=25°C)
<It is the same ratings for Tr1 and Tr2.>
Parameter
Drain-source voltage
Gate-source voltage
∗1
Symbol
VDSS
VGSS
ID
IDP ∗1
IS
ISP ∗1
PD ∗2
Tch
Tstg
Limits
−30
±20
±3.5
±14
−1.6
−14
2.0
150
−55 to +150
(4)
(1) Tr1 Source
(2) Tr1 Gate
(3) Tr2 Source
(4) Tr2 Gate
(5) Tr2 Drain
(6) Tr2 Drain
(7) Tr1 Drain
(8) Tr1 Drain
Unit
V
V
A
A
A
A
W
°C
°C
∗1 Pw≤10µs, Duty cycle≤1%
∗2 Mounted on a ceramic board
zThermal resistance
Parameter
Channel to ambient
Symbol
Rth(ch-a) ∗
Limits
Unit
62.5
°C / W
∗ Mounted on a ceramic board.
Rev.A
1/4
SP8J3
Transistors
zElectrical characteristics (Ta=25°C)
<It is the same characteristics for Tr1 and Tr2.>
Parameter
Symbol Min.
IGSS
Gate-source leakage
−
Drain-source breakdown voltage V(BR) DSS −30
IDSS
Zero gate voltage drain current
−
VGS (th) −1.0
Gate threshold voltage
−
∗
Static drain-source on-state
RDS (on)
−
resistance
−
Yfs ∗ 1.8
Forward transfer admittance
Ciss
−
Input capacitance
Coss
Output capacitance
−
Reverse transfer capacitance
−
Crss
Turn-on delay time
−
td (on) ∗
Rise time
−
tr ∗
Turn-off delay time
−
td (off) ∗
Fall time
−
tf ∗
Total gate charge
−
Qg ∗
Gate-source charge
−
Qgs ∗
Gate-drain charge
Qgd ∗
−
Typ.
Max.
−
−
−
−
65
100
120
−
490
110
75
10
15
35
10
5.5
1.5
2.0
±10
−
−1
−2.5
90
140
165
−
−
−
−
−
−
−
−
−
−
−
Unit
µA
V
µA
V
mΩ
mΩ
mΩ
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
Conditions
VGS=±20V, VDS=0V
ID= −1mA, VGS=0V
VDS= −30V, VGS=0V
VDS= −10V, ID= −1mA
ID= −3.5A, VGS= −10V
ID= −1.75A, VGS= −4.5V
ID= −1.75A, VGS= −4.0V
VDS= −10V, ID= −1.75A
VDS= −10V
VGS=0V
f=1MHz
ID= −1.75A
VDD −15V
VGS= −10V
RL=8.6Ω
RG=10Ω
VDD −15V
VGS= −5V
ID= −3.5A
∗Pulsed
zBody diode characteristics (Source-drain) (Ta=25°C)
<It is the same characteristics for Tr1 and Tr2.>
Parameter
Forward voltage
Symbol
Min.
Typ.
Max.
Unit
VSD
−
−
−1.2
V
Conditions
IS= −1.6A, VGS=0V
Rev.A
2/4
SP8J3
Transistors
Ta=125°C
Ta=75°C
Ta=25°C
Ta= −25°C
0.1
0.01
0.001
0.5
1.0
1.5
2.0
2.5
3.0
Ta=25°C
Pulsed
100
VGS= −4V
VGS= −4.5V
VGS= −10V
10
1
0.1
1
GATE-SOURCE VOLTAGE : −VGS (V)
VGS= −4.5V
Pulsed
Ta=125°C
Ta=75°C
Ta=25°C
Ta= −25°C
100
10
0.1
1
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : RDS (on) (mΩ)
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : RDS (on) (mΩ)
Fig.1 Typical Transfer Characteristics
1000
1
Ciss
100
Coss
Crss
100
10
Fig.3 Static Drain-Source On-State
Resistance vs. Drain Current
1000
10
VGS= −4V
Pulsed
Ta=125°C
Ta=75°C
Ta=25°C
Ta= −25°C
100
10
0.1
1
10
VGS=0V
Pulsed
Ta=125°C
Ta=75°C
Ta=25°C
Ta= −25°C
1
0.1
0.01
0.0
Ta=25°C
VDD= −15V
VGS= −10V
RG=10Ω
Pulsed
tf
100
td (off)
td (on)
10
tr
1
0.01
0.1
1
0.5
1.0
1.5
SOURCE-DRAIN VOLTAGE : −VSD (V)
Fig.6 Reverse Drain Current
Source-Drain Current
Fig.5 Static Drain-Source On-State
vs. Drain Current
SWITCHING TIME : t (ns)
CAPACITANCE : C (pF)
10
0.1
DRAIN CURRENT : −ID (A)
1000
10
100
10
1000
1
Ta=125°C
Ta=75°C
Ta=25°C
Ta= −25°C
Fig.2 Static Drain-Source On-State
Resistance vs. Drain Current
10
Ta=25°C
f=1MHz
VGS=0V
0.1
VGS= −10V
Pulsed
DRAIN CURRENT : −ID (A)
Fig.4 Static Drain-Source On-State
vs. Drain Current
10
0.01
1000
DRAIN CURRENT : −ID (A)
DRAIN CURRENT : −ID (A)
10000
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : RDS (on) (mΩ)
1
1000
REVERSE DRAIN CURRNT : −IDR (A)
VDS= −10V
Pulsed
10
8
GATE-SOURCE VOLTAGE : −VGS (V)
DRAIN CURRENT : −ID (A)
10
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : RDS (on) (mΩ)
zElectrical characteristic curves
Ta=25°C
VDD= −15V
ID= −3.5A
RG=10Ω
Pulsed
7
6
5
4
3
2
1
0
0
1
2
3
4
5
6
7
8
DRAIN-SOURCE VOLTAGE : −VDS (V)
DRAIN CURRENT : −ID (A)
TOTAL GATE CHARGE : Qg (nC)
Fig.7 Typical Capacitance
vs. Drain-Source Voltage
Fig.8 Switching Characteristics
Fig.9 Dynamic Input Characteristics
Rev.A
3/4
SP8J3
Transistors
zMeasurement circuits
VGS
ID
VDS
VGS
10%
90%
RL
D.U.T.
90%
90%
RG
VDD
VDS
10%
td(on)
10%
td(off)
tr
ton
Fig.10 Switching Time Test Circuit
tr
toff
Fig.11 Switching Time Waveforms
VG
VGS
ID
VDS
RL
IG(Const.)
D.U.T.
Qg
VGS
Qgs
RG
Qgd
VDD
Charge
Fig.12 Gate Charge Test Circuit
Fig.13 Gate Charge Waveform
Rev.A
4/4
Appendix
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any
means without prior permission of ROHM CO.,LTD.
The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of
whatsoever nature in the event of any such infringement, or arising from or connected with or related
to the use of such devices.
Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or
otherwise dispose of the same, no express or implied right or license to practice or commercially
exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document are no antiradiation design.
The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level of
reliability and the malfunction of with would directly endanger human life (such as medical instruments,
transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other
safety devices), please be sure to consult with our sales representative in advance.
About Export Control Order in Japan
Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control
Order in Japan.
In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)
on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.
Appendix1-Rev1.1