ROHM RTF020P02

RTF020P02
Transistors
DC-DC Converter (−20V, −2.0A)
RTF020P02
TUMT3
0.2
2.0±0.1
0.85MAX
0.77±0.05
0.3 +0.1
−0.05
(3)
zApplications
DC-DC converter
0.2MAX
zExternal dimensions (Unit : mm)
2.1±0.1
1.7±0.1
zFeatures
1) Low on-resistance. (80mΩ at 2.5V)
2) High power package.
3) High speed switching.
4) Low voltage drive. (2.5V)
0 to 0.1
0.2
(1)
(2)
0.65 0.65
1.3±0.1
0.17±0.05
Each lead has same dimensions
Abbreviated symbol : WM
zEquivalent circuit
zStructure
Silicon P-channel
MOS FET
(3)
zPackaging specifications
Package
Type
Code
Basic ordering unit (pieces)
RTF020P02
∗2
(1)
Taping
∗1
TL
3000
(2)
∗1 ESD PROTECTION DIODE
∗2 BODY DIODE
(1) Gate
(2) Source
(3) Drain
Rev.A
1/4
RTF020P02
Transistors
zAbsolute maximum ratings (Ta=25°C)
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Source current
(Body diode)
Continuous
Pulsed
Continuous
Pulsed
Total power dissipation
Channel temperature
Range of Storage temperature
Symbol
VDSS
VGSS
ID
IDP ∗1
IS ∗1
ISP
PD ∗2
Tch
Tstg
Limits
−20
±12
±2.0
±8
−0.6
−8
0.8
150
−55 to +150
Unit
V
V
A
A
A
A
W
°C
°C
∗1 Pw≤10µs, Duty cycle≤1%
∗2 Mounted on a ceramic board
zElectrical characteristics (Ta=25°C)
Parameter
Symbol Min.
IGSS
−
Gate-source leakage
Drain-source breakdown voltage V(BR) DSS −20
Zero gate voltage drain current
−
IDSS
Gate threshold voltage
VGS (th) −0.7
−
∗
Static drain-source on-state
−
RDS (on)
resistance
−
Yfs ∗ 2.0
Forward transfer admittance
−
Input capacitance
Ciss
Output capacitance
−
Coss
Reverse transfer capacitance
−
Crss
Turn-on delay time
−
td (on) ∗
Rise time
−
tr ∗
Turn-off delay time
−
td (off) ∗
Fall time
−
tf ∗
Total gate charge
−
Qg
Gate-source charge
−
Qgs
Gate-drain charge
−
Qgd
Typ.
Max.
−
−
−
−
60
65
120
−
640
110
85
12
15
40
12
7.0
1.6
2.0
±10
−
−1
−2.0
85
90
165
−
−
−
−
−
−
−
−
−
−
−
Unit
µA
V
µA
V
mΩ
mΩ
mΩ
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
Conditions
VGS=±12V, VDS=0V
ID= −1mA, VGS=0V
VDS= −20V, VGS=0V
VDS= −10V, ID= −1mA
ID= −2A, VGS= −4.5V
ID= −2A, VGS= −4V
ID= −2A, VGS= −2.5V
VDS= −10V, ID= −1A
VDS= −10V
VGS=0V
f=1MHz
ID= −1A
VDD −15V
VGS= −4.5V
RL=15Ω
RGS=10Ω
VDD −15V RL 7.5Ω
VGS= −4.5V RGS=10Ω
ID= −2A
∗Pulsed
Body diode characteristics (source-drain characteristics)
VSD
−
−
−1.2
Forward voltage
V
IS= −0.6A, VGS=0V
Rev.A
2/4
RTF020P02
Transistors
Ta=125°C
Ta=75°C
Ta=25°C
Ta= −25°C
0.1
0.01
0.001
0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8
Ta=25°C
Pulsed
VGS= −2.5V
VGS= −4.0V
VGS= −4.5V
100
10
0.1
1
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : RDS (on) (mΩ)
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : RDS (on) (mΩ)
VGS= −4V
Pulsed
Ta=125°C
Ta=75°C
Ta=25°C
Ta= −25°C
100
1
10
0.1
Ciss
Coss
Crss
10
10
VGS=0V
Pulsed
Ta=125°C
Ta=75°C
Ta=25°C
Ta= −25°C
1
0.1
0.01
0.0
100
10000
Ta=25°C
VDD= −15V
VGS= −4.5A
RG=10Ω
Pulsed
1000
tf
td (off)
100
td (on)
10
tr
1
0.01
0.1
1
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
SOURCE-DRAIN VOLTAGE : −VSD (V)
Fig.5 Static Drain-Source On-State
Resistance vs. Drain Current
SWITCHING TIME : t (ns)
CAPACITANCE : C (pF)
1000
1
1
10
Fig.3 Static Drain-Source On-State
Resistance vs. Drain Current
DRAIN CURRENT : −ID (A)
Ta=25°C
f=1MHz
VGS=0V
0.1
1
10
VGS= −2.5V
Pulsed
100
Fig.4 Static Drain-Source On-State
Resistance vs. Drain Current
10
0.01
10
0.1
DRAIN CURRENT : −ID (A)
Ta=125°C
Ta=75°C
Ta=25°C
Ta= −25°C
10
100
100
10
1000
DRAIN CURRENT : −ID (A)
10000
Ta=125°C
Ta=75°C
Ta=25°C
Ta= −25°C
Fig.2 Static Drain-Source On-State
Resistance vs. Drain Current
Fig.1 Typical Transfer Characteristics
10
0.1
VGS= −4.5V
Pulsed
DRAIN CURRENT : −ID (A)
GATE-SOURCE VOLTAGE : −VGS (V)
1000
1000
REVERSE DRAIN CURRENT : −IS (A)
1
1000
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : RDS (on) (mΩ)
VDS= −10V
Pulsed
10
Fig.6 Reverse Drain Current vs.
Source-Drain Voltage
8
GATE-SOURCE VOLTAGE : −VGS (V)
DRAIN CURRENT : −ID (A)
10
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : RDS (on) (mΩ)
zElectrical characteristic curves
Ta=25°C
VDD= −15V
ID= −2A
RG=10Ω
Pulsed
7
6
5
4
3
2
1
0
0
1
2
3
4
5
6
7
8
DRAIN-SOURCE VOLTAGE : −VDS (V)
DRAIN CURRENT : −ID (A)
TOTAL GATE CHARGE : Qg (nC)
Fig.7 Typical Capacitance
vs. Drain-Source Voltage
Fig.8 Switching Characteristics
Fig.9 Dynamic Input Characteristics
Rev.A
3/4
RTF020P02
Transistors
zMeasurement circuits
Pulse Width
VGS
ID
VDS
VGS
10%
50%
90%
50%
RL
10%
D.U.T.
10%
RG
VDD
VDS
90%
td(on)
90%
td(off)
tr
ton
Fig.10 Switching Time Measurement Circuit
tf
toff
Fig.11 Switching Waveforms
VG
VGS
ID
VDS
RL
IG(Const.)
D.U.T.
Qg
VGS
Qgs
RG
Qgd
VDD
Charge
Fig.12 Gate Charge Measurement Circuit
Fig.13 Gate Charge Waveforms
Rev.A
4/4
Appendix
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any
means without prior permission of ROHM CO.,LTD.
The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of
whatsoever nature in the event of any such infringement, or arising from or connected with or related
to the use of such devices.
Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or
otherwise dispose of the same, no express or implied right or license to practice or commercially
exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document are no antiradiation design.
The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level of
reliability and the malfunction of with would directly endanger human life (such as medical instruments,
transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other
safety devices), please be sure to consult with our sales representative in advance.
About Export Control Order in Japan
Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control
Order in Japan.
In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)
on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.
Appendix1-Rev1.1