® RT8207N Complete DDRII/DDRIII/Low-Power DDRIII/DDRIV Memory Power Supply Controller General Description Features The RT8207N provides a complete power supply for both DDRII/DDRIII/Low-Power DDRIII/DDRIV memory systems. It integrates a synchronous PWM buck controller with a 1.5A sink/source tracking linear regulator and buffered low noise reference. z The PWM controller provides the high efficiency, excellent transient response, and high DC output accuracy needed for stepping down high voltage batteries to generate low voltage chipset RAM supplies in notebook computers. The constant-on-time PWM control scheme handles wide input/output voltage ratios with ease and provides 100ns “instant-on” response to load transients while maintaining a relatively constant switching frequency. The RT8207N achieves high efficiency at a reduced cost by eliminating the current sense resistor found in traditional current mode PWMs. Efficiency is further enhanced by its ability to drive very large synchronous rectifier MOSFETs. The buck conversion allows this device to directly step down high voltage batteries for the highest possible efficiency. The 1.5A sink/source LDO maintains fast transient response, only requiring 20μF of ceramic output capacitance. In addition, the LDO supply input is available externally to significantly reduce the total power losses. The RT8207N supports all of the sleep state controls placing VTT at high-Z in S3 and discharging VDDQ, VTT and VTTREF (soft-off) in S4/S5. z z PWM Controller ` Resistor Programmable Current Limit by Low Side RDS(ON) Sense ` Quick Load Step Response Within 100ns ` 1% VVDDQ Accuracy Over Line and Load ` Fixed 1.8V (DDRII), 1.5V (DDRIII) or Adjustable 0.75V to 3.3V Output Range for 1.35V (Low-Power DDRIII) and 1.2V (DDRIV) ` 4.5V to 26V Battery Input Range ` Resistor Programmable Frequency ` Over/Under Voltage Protection ` Internal Current Limit Ramp Soft-Start ` Drives Large Synchronous-Rectifier FETs ` Power Good Indicator 1.5A LDO (VTT), Buffered Reference (VTTREF) ` Capable to Sink and Source 1.5A ` External Input Available to Minimize Power Losses ` Integrated Divider Tracks 1/2 VDDQ for Both VTT and VTTREF ` Buffered Low Noise 10mA VTTREF Output ` Remote Sensing (VTTSNS) ` ±20mV Accuracy for Both VTTREF and VTT ` Supports High-Z in S3 and Soft-Off in S4/S5 RoHS Compliant and Halogen Free Ordering Information RT8207N Pin 1 Orientation (2) : Quadrant 2, Follow EIA-481-D The RT8207N has all of the protection features including thermal shutdown and is available in a WQFN-24L 4x4 package. Applications z z z DDRI/II/III/Low-Power DDRIII/DDRIV Memory Power Supplies Notebook Computers SSTL18, SSTL15 and HSTL Bus Termination Copyright © 2012 Richtek Technology Corporation. All rights reserved. DS8207N-00 June 2012 (2) Package Type QW : WQFN-24L 4x4 (W-Type) Lead Plating System G : Green (Halogen Free and Pb Free) Note : Richtek products are : ` RoHS compliant and compatible with the current requirements of IPC/JEDEC J-STD-020. ` Suitable for use in SnPb or Pb-free soldering processes. is a registered trademark of Richtek Technology Corporation. www.richtek.com 1 RT8207N Pin Configurations Marking Information (TOP VIEW) 38= : Product Code VTT VLDOIN BOOT UGATE PHASE LGATE 38=YM DNN YMDNN : Date Code 24 23 22 21 20 19 VTTGND VTTSNS GND MODE VTTREF NC 1 18 2 17 3 16 GND 4 15 25 5 14 13 6 8 9 10 11 12 NC VDDQ FB S3 S5 TON 7 PGND NC CS VDDP VDD PGOOD WQFN-24L 4x4 Copyright © 2012 Richtek Technology Corporation. All rights reserved. www.richtek.com 2 is a registered trademark of Richtek Technology Corporation. DS8207N-00 June 2012 RT8207N Typical Application Circuit VIN 4.5V to 26V RTON 620k VVDDP 5V RT8207N 12 BOOT 22 TON 15 VDDP UGATE 21 R1 5.1 C1 1µF 14 VDD C2 1µF R2 100k PHASE R3 5.6k 16 CS 13 PGOOD PGOOD VDDQ Control 4 Discharge Mode C9 10µF x 3 C4 0.1µF Q1 BSC09 4N03S R6 0 20 LGATE 19 VVDDQ 1.2V L1 1µH C7 220µF R7* Q2 BSC032N03S R8 6k C5* FB 9 * : Optional 10 S3 11 S5 VTT/VTTREF Control R5 0 R9 10k VLDOIN 23 MODE C6* C9 0.1µF VDDQ 8 24 VTT GND 2 VTTSNS 18 PGND 1 VTTGND VTTREF 5 3, 25 (Exposed Pad) C8 10µF x 2 VTT 0.6V C3 33nF Figure 1. Adjustable Voltage Regulator VIN 4.5V to 26V RTON 620k VVDDP 5V R1 5.1 C1 1µF C2 1µF R2 100k PGOOD VTT/VTTREF Control VDDQ Control Discharge Mode RT8207N 12 BOOT 22 TON 15 VDDP UGATE 21 14 VDD R3 5.6k 16 CS 13 PGOOD 10 S3 11 S5 4 MODE 3, 25 (Exposed Pad) GND 18 PGND 1 VTTGND PHASE C8 10µF x 2 C4 0.1µF VVDDQ 1.8V/1.5V Q1 BSC09 4N03S R6 0 20 LGATE 19 VDDQ R5 0 Q2 BSC032N03S L1 1µH C6 220µF R7* C5* 8 VLDOIN 23 24 VTT 2 VTTSNS VTTREF 5 * : Optional C7 10µF x 2 VTT 0.9V/0.75V C3 33nF FB 9 VVDDP for DDRII GND for DDRIII Figure 2. Fixed Voltage Regulator Copyright © 2012 Richtek Technology Corporation. All rights reserved. DS8207N-00 June 2012 is a registered trademark of Richtek Technology Corporation. www.richtek.com 3 RT8207N Functional Pin Description Pin No. Pin Name Pin Function 1 VTTGND Power Ground Output for VTT LDO. 2 VTTSNS Voltage Sense Input for VTT LDO. Connect to the terminal of the VTT LDO output capacitor. 3, GND 25 (Exposed Pad) Analog Ground. The exposed pad must be soldered to a large PCB and connected to GND for maximum thermal dissipation. 4 MODE Output Discharge Mode Setting. Connect to VDDQ for tracking discharge. Connect to GND for non-tracking discharge. Connect to VDD for no discharge. 5 VTTREF Buffered Reference Output. NC No Internal Connection. 6, 7, 17 8 VDDQ 9 FB 10 S3 Reference Input for VTT and VTTREF. Discharge current sinking terminal for VDDQ non-tracking discharge. Output voltage feedback input for VDDQ output if the FB pin is connected to VDD or GND. VDDQ Output Setting. Connect to GND for DDR3 (VVDDQ = 1.5V) power supply. Connect to VDD for DDR2 (VVDDQ = 1.8V) power supply. Or connect to a resistive voltage divider from VDDQ to GND to adjust the output of PWM from 0.75V to 3.3V. S3 Signal Input. 11 S5 S5 Signal Input 12 TON Set the UGATE on time through a pull-up resistor connecting to VIN. 13 PGOOD 14 VDD 15 VDDP 16 CS 18 PGND 19 LGATE 20 PHASE 21 UGATE Low Side Gate Driver Output for VDDQ. Switch Node. External inductor connection for VDDQ and behave as the current sense comparator input for Low Side MOSFET RDS(ON) sensing. High Side Gate Driver Output for VDDQ. 22 BOOT Boost Flying Capacitor Connection for VDDQ. 23 VLDOIN Power Supply for VTT LDO. 24 VTT Power Output for VTT LDO. Power Good Open Drain Output. In High state when VDDQ output voltage is within the target range. Supply Input for Analog Supply. Supply Input for LGATE Gate Driver. Current Limit Threshold Setting Input. Connect to VDD through the voltage setting resistor. Power Ground for Low Side MOSFET. Copyright © 2012 Richtek Technology Corporation. All rights reserved. www.richtek.com 4 is a registered trademark of Richtek Technology Corporation. DS8207N-00 June 2012 RT8207N Function Block Diagram TRIG On-time Compute 1-SHOT VDDQ TON BOOT + 0.75V VREF + 116%VREF FB OV + 70% VREF R Comp UV - S UGATE DRV PHASE Min. TOFF Q TRIG Latch S1 Q VDDP 1-SHOT Latch S1 Q LGATE DRV PGND Diode Emulation - 90% VREF VDD PWM Q SS Timer + + + - Thermal Shutdown S5 + GM - CS 10µA SS Int. PGOOD Buck Controller VDDQ S5 S3 MODE Discharge Mode Select Thermal Shutdown VTTREF VLDOIN + + - + - VTT + - VTTSNS GND - 110% VVTTREF + 90% VVTTREF - VTTGND + VTT LDO Copyright © 2012 Richtek Technology Corporation. All rights reserved. DS8207N-00 June 2012 is a registered trademark of Richtek Technology Corporation. www.richtek.com 5 RT8207N Absolute Maximum Ratings (Note 1) Supply Input Voltage, TON to GND ------------------------------------------------------------------------------------- −0.3V to 32V BOOT to PHASE ----------------------------------------------------------------------------------------------------------- −0.3V to 6V z VDD, VDDP, CS, MODE, S3, S5, VTTSNS, VDDQ, VTTREF, VTT, VLDOIN, FB, PGOOD to GND ------------------------------------------------------------------------------------------------------- −0.3V to 6V z PGND, VTTGND to GND -------------------------------------------------------------------------------------------------- −0.3V to 0.3V z PHASE to GND DC ------------------------------------------------------------------------------------------------------------------------------ −1V to 32V < 20ns ------------------------------------------------------------------------------------------------------------------------ −8V to 38V z LGATE to GND DC ------------------------------------------------------------------------------------------------------------------------------ −0.3V to 6V < 20ns ------------------------------------------------------------------------------------------------------------------------ −2.5V to 7.5V z UGATE to PHASE DC ------------------------------------------------------------------------------------------------------------------------------ −0.3V to 6V < 20ns ------------------------------------------------------------------------------------------------------------------------ −5V to 7.5V z The Other Pins -------------------------------------------------------------------------------------------------------------- −0.3V to 6.5V z Power Dissipation, PD @ TA = 25°C WQFN-24L 4x4 ------------------------------------------------------------------------------------------------------------- 1.923W z Package Thermal Resistance (Note 2) WQFN-24L 4x4, θJA -------------------------------------------------------------------------------------------------------- 52°C/W WQFN-24L 4x4, θJC ------------------------------------------------------------------------------------------------------- 7°C/W z Junction Temperature ------------------------------------------------------------------------------------------------------ 150°C z Lead Temperature (Soldering, 10 sec.) -------------------------------------------------------------------------------- 260°C z Storage Temperature Range --------------------------------------------------------------------------------------------- −65°C to 150°C z ESD Susceptibility (Note 3) HBM (Human Body Model) ----------------------------------------------------------------------------------------------- 2kV z z Recommended Operating Conditions z z z z (Note 4) Supply Input Voltage, VIN -----------------------------------------------------------------------------------------------Control Voltage, VDD, VDDP -------------------------------------------------------------------------------------------Junction Temperature Range --------------------------------------------------------------------------------------------Ambient Temperature Range --------------------------------------------------------------------------------------------- 4.5V to 26V 4.5V to 5.5V −40°C to 125°C −40°C to 85°C Electrical Characteristics (VIN = 15V, VDD = VVDDP = 5V, RTON = 1MΩ, TA = 25°C, unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit Quiescent Supply Current (V DD + VDDP) FB forced above the regulation point, VS5 = 5V, VS3 = 0V -- 470 1000 μA TON Operating Current RTON = 1MΩ -- 15 -- μA IVLDOIN BIAS Current VS5 = V S3 = 5V, V TT = No Load -- 1 -- μA IVLDOIN Standby Current VS5 = 5V, VS3 = 0V, V TT = No Load -- 0.1 10 μA PWM Controller Copyright © 2012 Richtek Technology Corporation. All rights reserved. www.richtek.com 6 is a registered trademark of Richtek Technology Corporation. DS8207N-00 June 2012 RT8207N Parameter Shutdown Current (VS5 = VS3 = 0V) FB Reference Voltage Symbol ISHDN VREF Test Conditions Min Typ Max VDD + VVDDP -- 1 10 TON -- 0.1 5 S5/S3 = 0V −1 0.1 1 I VLDOIN -- 0.1 1 0.742 0.75 0.758 VDD = 4.5V to 5.5V Unit μA V Fixed VDDQ Output Voltage FB = GND -- 1.5 -- FB = VDD -- 1.8 -- FB Input Bias Current FB = 0.75V −1 0.1 1 μA 0.75 -- 3.3 V 267 334 401 ns 250 400 550 ns -- 100 -- kΩ VS5 = GND -- 15 -- Ω CS Sink Current Current Limit Comparator Offset Zero Crossing Threshold VCS > 4.5V (VVDD−CS – VGND−PHASE), RCS = 10kΩ GND − PHASE 9 10 11 μA −15 -- 15 mV −5 -- 10 mV Current Limit Threshold Setting Range VDD – VCS 50 -- 200 mV 60 70 80 % 113 116 120 % -- 20 -- μs 3.9 4.2 4.5 V -- 5 -- ms VDDQ Voltage Range On-Time RTON = 1MΩ, VVDDQ = 1.25V Minimum Off-Time VDDQ Input Resistance VDDQ Shutdown Discharge Resistance V Current Sensing Fault Protection Under Voltage Protection Threshold Over Voltage Protection Threshold VUVP VOVP Over Voltage Fault Delay VDD POR Threshold Under Voltage Blank Time With respect to error comparator threshold FB forced above over voltage threshold Rising edge, hysteresis = 120mV, PWM disabled below this level From S5 signal going high Thermal Shutdown Thermal Shutdown Hysteresis Driver On-Resistance TSD -- 165 -- °C ΔTSD -- 10 -- °C UGATE Driver Source RUGATEsr BOOT − PHASE Forced to 5V -- 2.5 5 Ω UGATE Driver Sink RUGATEsk BOOT − PHASE Forced to 5V -- 1.5 3 Ω LGATE Driver Source RLGATEsr DL, High State -- 2.5 5 Ω LGATE Driver Sink RLGATEsk DL, Low State -- 0.8 1.6 Ω Dead Time Internal Boost Charging Switch On Resistance LGATE Rising (PHASE = 1.5V) -- 40 -- UGATE Rising -- 40 -- VDDP to BOOT, 10mA -- -- 80 Copyright © 2012 Richtek Technology Corporation. All rights reserved. DS8207N-00 June 2012 ns Ω is a registered trademark of Richtek Technology Corporation. www.richtek.com 7 RT8207N Parameter Symbol Test Conditions Min Typ Max Unit Logic I/O Logic Input Low Voltage S3, S5 Low -- -- 0.8 V Logic Input High Voltage S3, S5 High 2 -- -- V Logic Input Current S3, S5 = VDD/GND −1 0 1 μA −13 −10 −7 % -- 3 -- % -- 2.5 -- μs -- -- 0.4 V -- -- 1 μA V VDDQ = VLDOIN = 1.2V/1.35/1.5V/1.8V, ⎪ IVTT ⎪= 0A V VDDQ = VLDOIN = 1.2V/1.35/1.5V/1.8V, ⎪ IVTT ⎪< 1A V VDDQ = VLDOIN = 1.2V/1.35, ⎪ IVTT ⎪< 1.2A −20 -- 20 −30 -- 30 −40 -- 40 V VDDQ = VLDOIN = 1.5V/1.8V, ⎪ IVTT ⎪< 1.5A −40 -- 40 ⎛V ⎞ VTT = ⎜ VDDQ ⎟ × 0.95 2 ⎠ ⎝ PGOOD = High 1.6 2.6 3.6 -- 1.3 -- 1.6 2.6 3.6 -- 1.3 -- ⎛V ⎞ S5 = 5V, S3 = 0V, VTT = ⎜ VDDQ ⎟ 2 ⎝ ⎠ −10 -- 10 μA VTTSNS Leakage Current IVTTSNSLK ISINK = 1mA −1 -- 1 μA VTT Discharge Current IDSCHRG V VDDQ = 0V, V TT = 0.5V, S5 = S3 =0V 10 30 -- mA VTTREF Output Voltage V VTTREF V VDDQSNS/2, VTTREF Output Voltage Tolerance V VTTREFTOL VTTREF Source Current Limit IVTTREFOCL PGOOD (upper side threshold decide by Over Voltage threshold) Measured at FB, with respect to Trip Threshold (Falling) reference, no load Trip Threshold (Hysteresis) Falling edge, FB forced below Fault Propagation Delay PGOOD trip threshold Output Low Voltage ISINK = 1mA Leakage Current ILEAK High state, forced to 5V VTT LDO VTT Output Tolerance VTT Source Current Limit V VTTTOL IVTTOCLSRC V TT = 0V VTT Sink Current Limit IVTTOCLSNK ⎛V ⎞ VTT = ⎜ VDDQ ⎟ × 1.05 , 2 ⎝ ⎠ PGOOD = High V TT = VVDDQ VTT Leakage Current IVTTLK ⎛V ⎞ VVTTREF = ⎜ VDDQ ⎟ 2 ⎝ ⎠ V LDOIN = V VDDQ = 1.5V, ⎪ IVTTREF ⎪ <10mA V LDOIN = VVDDQ = 1.8V, ⎪ IVTTREF ⎪ <10mA -- 0.9/0.75 -- −15 -- 15 −18 -- 18 V VTTREF = 0V 10 40 80 Copyright © 2012 Richtek Technology Corporation. All rights reserved. www.richtek.com 8 mV A A mV mA is a registered trademark of Richtek Technology Corporation. DS8207N-00 June 2012 RT8207N Note 1. Stresses beyond those listed “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions may affect device reliability. Note 2.θJA is measured at TA = 25°C on a high effective thermal conductivity four-layer test board per JEDEC 51-7. θJC is measured at the exposed pad of the package. Note 3. Devices are ESD sensitive. Handling precaution is recommended. Note 4. The device is not guaranteed to function outside its operating conditions. Copyright © 2012 Richtek Technology Corporation. All rights reserved. DS8207N-00 June 2012 is a registered trademark of Richtek Technology Corporation. www.richtek.com 9 RT8207N Typical Operating Characteristics VDDQ Efficiency vs. Output Current VDDQ Efficiency vs. Output Current 100 DDRII 90 90 80 80 Efficiency (%) 1 Efficiency (%) 1 100 70 60 50 40 30 DDRII 70 60 50 40 30 20 20 10 10 VIN = 8V, VDDQ = 1.8V, S3 = GND, S5 = 5V 0 0.001 0.01 0.1 1 VIN = 12V, VDDQ = 1.8V, S3 = GND, S5 = 5V 0 0.001 10 0.01 Output Current (A) VDDQ Efficiency vs. Output Current DDRII 90 90 80 80 70 60 50 40 30 20 DDRIII 70 60 50 40 30 10 VIN = 20V, VDDQ = 1.8V, S3 = GND, S5 = 5V 0 0.001 0.01 0.1 1 VIN = 8V, VDDQ = 1.5V, S3 = GND, S5 = 5V 0 0.001 10 0.01 VDDQ Efficiency vs. Output Current DDRIII 80 80 70 70 Efficiency (%) 1 90 60 50 40 30 20 0 0.001 10 DDRIII 60 50 40 30 20 VIN = 12V, VDDQ = 1.5V, S3 = GND, S5 = 5V 0.01 0.1 1 Output Current (A) Copyright © 2012 Richtek Technology Corporation. All rights reserved. www.richtek.com 10 1 VDDQ Efficiency vs. Output Current 100 90 10 0.1 Output Current (A) Output Current (A) Efficiency (%) 1 10 20 10 100 1 VDDQ Efficiency vs. Output Current 100 Efficiency (%) 1 Efficiency (%) 1 100 0.1 Output Current (A) 10 10 0 0.001 VIN = 20V, VDDQ = 1.5V, S3 = GND, S5 = 5V 0.01 0.1 1 10 Output Current (A) is a registered trademark of Richtek Technology Corporation. DS8207N-00 June 2012 RT8207N Switching Frequency vs. Output Current Switching Frequency vs. Output Current 500 DDRII, VIN = 8V, VDDQ = 1.8V, S3 = GND, S5 = 5V 450 Switching Frequency (kHz) 1 Switching Frequency (kHz) 1 500 400 350 300 250 200 150 100 50 0 0.001 0.01 0.1 1 450 DDRII, VIN = 12V, VDDQ = 1.8V, S3 = GND, S5 = 5V 400 350 300 250 200 150 100 50 0 0.001 10 0.01 Switching Frequency vs. Output Current Switching Frequency (kHz) 1 Switching Frequency (kHz) 1 400 350 300 250 200 150 100 50 0 0.001 0.01 0.1 1 450 DDRIII, VIN = 8V, VVDDQ = 1.5V, S3 = GND, S5 = 5V 400 350 300 250 200 150 100 50 0 0.001 10 0.01 Output Current (A) Switching Frequency (kHz) 1 Switching Frequency (kHz) 1 DDRIII, VIN = 12V, VVDDQ = 1.5V, S3 = GND, S5 = 5V 400 350 300 250 200 150 100 50 0.01 0.1 1 Output Current (A) Copyright © 2012 Richtek Technology Corporation. All rights reserved. DS8207N-00 June 2012 1 10 Switching Frequency vs. Output Current 500 450 0 0.001 0.1 Output Current (A) Switching Frequency vs. Output Current 500 10 Switching Frequency vs. Output Current 500 DDRII, VIN = 20V, VDDQ = 1.8V, S3 = GND, S5 = 5V 450 1 Output Current (A) Output Current (A) 500 0.1 10 DDRIII, VIN = 20V, VVDDQ = 1.5V, S3 = GND, S5 = 5V 450 400 350 300 250 200 150 100 50 0 0.001 0.01 0.1 1 10 Output Current (A) is a registered trademark of Richtek Technology Corporation. www.richtek.com 11 RT8207N VDDQ Output Voltage vs. Output Current VDDQ Output Voltage vs. Output Current 1.820 1.515 DDRII 1.815 Output Voltage (V) 1 1.810 Output Voltage (V) 1 DDRIII 1.510 1.805 1.800 1.795 1.790 1.505 1.500 1.495 1.490 1.485 1.785 VIN = 12V, VDDQ = 1.5V, S3 = GND, S5 = 5V VIN = 12V, VDDQ = 1.8V, S3 = GND, S5 = 5V 1.780 0.001 0.01 0.1 1 1.480 0.001 10 0.01 DDRII DDRIII 0.7475 Output Voltage (V) 1 Output Voltage (V) 1 0.7480 0.8990 0.8985 0.8980 0.8975 0.7470 0.7465 0.7460 0.7455 VIN = 12V, VDDQ = 1.8V, S3 = S5 = 5V 0.8970 VIN = 12V, VDDQ = 1.5V, S3 = S5 = 5V 0.7450 -1.5 -1.2 -0.9 -0.6 -0.3 0 0.3 0.6 0.9 1.2 1.5 -1.5 -1.2 -0.9 -0.6 -0.3 Output Current (A) 0 0.3 0.6 0.9 1.2 1.5 Output Current (A) VTTREF Output Voltage vs. Output Current VTTREF Output Voltage vs. Output Current 0.760 DDRII DDRIII 0.758 Output Voltage (V) 1 0.910 Output Voltage (V) 1 10 VTT Output Voltage vs. Output Current VTT Output Voltage vs. Output Current 0.9000 0.912 1 Output Current (A) Output Current (A) 0.8995 0.1 0.908 0.906 0.904 0.902 0.900 0.756 0.754 0.752 0.750 0.748 VIN = 12V, VDDQ = 1.8V, S3 = S5 = 5V 0.898 VIN = 12V, VDDQ = 1.5V, S3 = S5 = 5V 0.746 -10 -8 -6 -4 -2 0 2 4 6 Output Current (mA) Copyright © 2012 Richtek Technology Corporation. All rights reserved. www.richtek.com 12 8 10 -10 -8 -6 -4 -2 0 2 4 6 8 10 Output Current (mA) is a registered trademark of Richtek Technology Corporation. DS8207N-00 June 2012 RT8207N Standby Current vs. Input Voltage Shutdown Current vs. Input Voltage 3.00 No Load, S3 = GND, S5 = 5V 580 Shutdown Current (µA) 1 Standby Current (µA)1 600 560 540 520 500 No Load, S3 = S5 = GND 2.50 2.00 1.50 1.00 0.50 0.00 480 5 8 11 14 17 20 23 5 26 8 11 1.502 DDRII 1.79675 20 23 26 DDRIII 1.498 1.79350 VDDQ Voltage (V) 1 VDDQ Voltage (V) 1 17 VDDQ Voltage vs. Temperature VDDQ Voltage vs. Temperature 1.80000 14 Input Voltage (V) Input Voltage (V) 1.79025 1.78700 1.78375 1.78050 1.494 1.490 1.486 1.482 1.478 1.77725 VIN = 12V, VDDQ = 1.8V, S3 = S5 = 5V 1.77400 -50 -25 0 25 50 75 100 125 VIN = 12V, VDDQ = 1.5V, S3 = GND, S5 = 5V 1.474 -50 -25 0 25 50 75 Temperature (°C) Temperature (°C) VDDQ and VTT Start Up VDDQ Start Up 100 125 No Load VDDQ (1V/Div) VDDQ (1V/Div) VTT (500mV/Div) PGOOD (5V/Div) IL (10A/Div) UGATE (20V/Div) S5 (5V/Div) LGATE (5V/Div) VIN = 12V, VDDQ = 1.5V, S3 = S5 = 5V Time (1ms/Div) Copyright © 2012 Richtek Technology Corporation. All rights reserved. DS8207N-00 June 2012 VIN = 12V, VDDQ = 1.5V S3 = GND, S5 = 5V, ILOAD = 10A Time (400μs/Div) is a registered trademark of Richtek Technology Corporation. www.richtek.com 13 RT8207N Shutdown Shutdown No Load Tracking Mode VDDQ (1V/Div) VTT (1V/Div) VDDQ (1V/Div) VTT (1V/Div) VTTREF (500mV/Div) VTTREF (500mV/Div) S5 (5V/Div) VIN = 12V VDDQ = 1.5V, S3 = S5 = 5V, MODE = VDDQ S5 (5V/Div) VIN = 12V VDDQ = 1.5V, S3 = S5 = 5V, MODE = GND Time (400μs/Div) Time (400μs/Div) VDDQ Load Transient Response VDDQ Load Transient Response DDRII, VIN = 12V, VDDQ = 1.8V, S3 = GND, S5 = 5V, ILOAD = 0.1A to 10A DDRIII, VIN = 12V, VDDQ = 1.5V, S3 = GND, S5 = 5V ILOAD = 0.1A to 10A VDDQ (50mV/Div) VDDQ (50mV/Div) IL (10A/Div) IL (10A/Div) UGATE (20V/Div) LGATE (10V/Div) UGATE (20V/Div) VTT (20mV/Div) VTTREF (20mV/Div) No Load Non-Tracking Mode LGATE (10V/Div) Time (20μs/Div) Time (20μs/Div) VTT Load Transient Response VTT Load Transient Response DDRII, VIN = 12V, VDDQ = 1.8V, S3 = S5 = 5V, IVTT = −1.5A to 1.5A VTT (20mV/Div) VTTREF (20mV/Div) IVTT (2A/Div) IVTT (2A/Div) VTT - VTTREF (20mV/Div) VTT - VTTREF (20mV/Div) Time (200μs/Div) Copyright © 2012 Richtek Technology Corporation. All rights reserved. www.richtek.com 14 DDRIII, VIN = 12V, VDDQ = 1.5V, S3 = S5 = 5V, IVTT = −1.5A to 1.5A Time (200μs/Div) is a registered trademark of Richtek Technology Corporation. DS8207N-00 June 2012 RT8207N UVP OVP VDDQ (2V/Div) No Load VDDQ (1V/Div) PGOOD (5V/Div) PGOOD (5V/Div) UGATE (20V/Div) LGATE (5V/Div) VIN = 12V, VDDQ = 1.5V, S3 = GND, S5 = 5V Time (40μs/Div) Copyright © 2012 Richtek Technology Corporation. All rights reserved. DS8207N-00 June 2012 LGATE (5V/Div) VIN = 12V, VDDQ = 1.5V, S3 = GND, S5 = 5V Time (40μs/Div) is a registered trademark of Richtek Technology Corporation. www.richtek.com 15 RT8207N Application Information The RT8207N PWM controller provides the high efficiency, excellent transient response, and high DC output accuracy needed for stepping down high voltage batteries to generate low voltage chipset RAM supplies in notebook computers. Richtek's Mach ResponseTM technology is specifically designed for providing 100ns “instant-on” response to load steps while maintaining a relatively constant operating frequency and inductor operating point over a wide range of input voltages. The topology circumvents the poor load transient timing problems of fixed-frequency current mode PWMs, while also avoiding the problems caused by widely varying switching frequencies in conventional constant-on-time and constantoff-time PWM schemes. The DRV TM mode PWM modulator is specifically designed to have better noise immunity for such a single output application. samples the input voltage and converts it to a current. This input voltage proportional current is used to charge an internal on-time capacitor. The on-time is the time required for the voltage on this capacitor to charge from zero volts to VVDDQ, thereby making the on-time of the The 1.5A sink/source LDO maintains fast transient response, only requiring 20μF of ceramic output capacitance. In addition, the LDO supply input is available externally to significantly reduce the total power losses. The RT8207N supports all of the sleep state controls, placing VTT at high-Z in S3 and discharging VDDQ, VTT and VTTREF (soft-off) in S4/S5. Diode-Emulation Mode PWM Operation The Mach ResponseTM DRVTM mode controller relies on the output filter capacitor's Effective Series Resistance (ESR) to act as a current-sense resistor, so the output ripple voltage provides the PWM ramp signal. Referring to the function diagrams of the RT8207N, the synchronous high side MOSFET is turned on at the beginning of each cycle. After the internal one-shot timer expires, the MOSFET will be turned off. The pulse width of this oneshot is determined by the converter's input and output voltages to keep the frequency fairly constant over the entire input voltage range. Another one-shot sets a minimum off-time (400ns typ.). On-Time Control The on-time one-shot comparator has two inputs. One input looks at the output voltage, while the other input Copyright © 2012 Richtek Technology Corporation. All rights reserved. www.richtek.com 16 high side switch directly proportional to the output voltage and inversely proportional to the input voltage. This implementation results in a nearly constant switching frequency without the need of a clock generator, as shown below : t ON = 3.85p × R TON × VVDDQ / (VIN − 0.5) And then the switching frequency is : f = VVDDQ / (VIN × t ON ) where RTON is the resistor connected from VIN to the TON pin. In diode-emulation mode, the RT8207N automatically reduces switching frequency at light load conditions to maintain high efficiency. This reduction of frequency is achieved smoothly without increasing VDDQ ripples or load regulation. As the output current decreases from heavy load condition, the inductor current will also be reduced and eventually come to the point where its valley touches zero current, which is the boundary between continuous conduction and discontinuous conduction modes. By emulating the behavior of diodes, the low side MOSFET allows only partial negative current to flow when the inductor freewheeling current reaches negative. As the load current is further decreased, it takes longer and longer time to discharge the output capacitor to the level that requires the next “ON” cycle. The on-time is kept the same as that in the heavy load condition. In contrast, when the output current increases from light load to heavy load, the switching frequency increases to the preset value as the inductor current reaches the continuous condition. The transition load point to the light load operation is shown in below figure and can be calculated as follows : VIN − VVDDQ × t ON 2L where tON is the on-time. ILOAD(SKIP) ≈ is a registered trademark of Richtek Technology Corporation. DS8207N-00 June 2012 RT8207N IL Slope = (VIN - VVDDQ) / L IPEAK ILOAD = IPEAK / 2 0 tON t Figure 3. Boundary Condition of CCM/DCM The switching waveforms may appear noisy and asynchronous when light loading causes diode-emulation operation, but this is a normal operating condition that results in high light load efficiency. Trade offs in DEM noise vs. light load efficiency is made by varying the inductor value. Generally, low inductor values produce a broader efficiency vs. load curve, while higher values result in higher full load efficiency (assuming that the coil resistance remains fixed) and less output voltage ripple. The disadvantages for using higher inductor values include larger physical size and degraded load transient response (especially at low input voltage levels). Current Limit Setting for VDDQ (CS) The RT8207N provides cycle-by-cycle current limiting control. The current limit circuit employs a unique “valley” current sensing algorithm. If the magnitude of the current sense signal at PHASE is above the current limit threshold, the PWM is not allowed to initiate a new cycle (Figure 4). The actual peak current is greater than the current limit threshold by an amount equal to the inductor ripple current. Therefore, the exact current limit characteristic and maximum load capability are a function of the sense resistance, inductor value, and battery and output voltage. IL IPEAK ILOAD ILIM The RT8207N uses the on resistance of the synchronous rectifier as the current sense element and supports temperature compensated MOSFET RDS(ON) sensing. The setting resistor, RILIM, between the CS pin and VDD sets the current limit threshold. The CS pin sinks an internal 10μA (typ.) current source at room temperature. This current has a 4700ppm/°C temperature slope to compensate the temperature dependency of RDS(ON). When the voltage drop across the low side MOSFET equals the voltage across the RILIM setting resistor, the positive current limit will activate. The high side MOSFET will not be turned on until the voltage drop across the low side MOSFET falls below the current limit threshold. Choose a current limit setting resistor via the following equation : RILIM = ILIMIT × RDS(ON) /10μA Carefully observe the PCB layout guidelines to ensure that noise and DC errors do not corrupt the current-sense signal seen by PHASE and PGND. Current Protection for VTT The LDO has an internally fixed constant over current limiting of 2.6A while operating at normal condition. After the first time VTT voltage comes to within 15% of its set voltage, this over current point is reduced to 1.3A. From then on, when the output voltage goes outside 20% of its set voltage, the internal power good signal will transit from high to low. MOSFET Gate Driver (UGATE, LGATE) The high side driver is designed to drive high current, low RDS(ON) N-MOSFET(s). When configured as a floating driver, 5V bias voltage is delivered from the VDDP supply. The average drive current is proportional to the gate charge at VGS = 5V times switching frequency. The instantaneous drive current is supplied by the flying capacitor between the BOOT and PHASE pins. A dead time to prevent shoot through is internally generated between high side MOSFET off to low side MOSFET on, and low side MOSFET off to high side MOSFET on. t 0 Figure 4. “Valley” Current Limit Copyright © 2012 Richtek Technology Corporation. All rights reserved. DS8207N-00 June 2012 is a registered trademark of Richtek Technology Corporation. www.richtek.com 17 RT8207N The low side driver is designed to drive high current, low RDS(ON) N-MOSFET(s). The internal pull down transistor that drives LGATE low is robust, with a 0.8Ω typical on resistance. A 5V bias voltage is delivered from the VDDP supply. The instantaneous drive current is supplied by the flying capacitor between VDDP and PGND. current limit circuit gradually ramps up the inductor current from zero. The maximum current-limit value is set externally as described in previous section. The soft-start time is determined by the current limit level and output capacitor value. If the current limit threshold is set for 200mV, the typical soft-start duration is 3ms after S5 is For high current applications, some combinations of high and low side MOSFETs may cause excessive gate drain coupling, which leads to efficiency killing, EMI producing shoot through currents. This is often remedied by adding a resistor in series with BOOT, which increases the turnon rising time of the high side MOSFET without degrading the turn-off time (Figure 5). enabled. VIN BOOT R UGATE PHASE Figure 5. Increasing the UGATE Rise Time Power Good Output (PGOOD) The power good output is an open drain output that requires a pull up resistor. When the output voltage is 15% above or 10% below its set voltage, PGOOD gets pulled low. It is held low until the output voltage returns to within these tolerances once more. During soft-start, PGOOD is actively held low and only allowed to transition high after soft-start is over and the output reaches 93% of its set voltage. There is a 2.5μs delay built into PGOOD circuitry to prevent false transition. POR Protection The RT8207N has a VDDP supply power on reset protection (POR). When the VDDP voltage is higher than 4.2V (typ.), VDDQ, VTT and VTTREF will be activated. This is a non-latch protection. Soft-Start The RT8207N provides an internal soft-start function to prevent large inrush current and output voltage overshoot when the converter starts up. Soft-start (SS) automatically begins once the chip is enabled. During soft-start, internal Copyright © 2012 Richtek Technology Corporation. All rights reserved. www.richtek.com 18 The soft-start function of VTT is achieved by the current limit and VTTREF voltage through the internal RC delay ramp up after S3 is high. During VTT startup, the current limit level is 2.6A. This allows the output to start up smoothly and safely under enough source/sink ability. Output Over Voltage Protection (OVP) The output voltage can be continuously monitored for over voltage. If the output exceeds 16% of its set voltage threshold, over voltage protection is triggered and the LGATE low side gate driver is forced high. This activates the low side MOSFET switch which rapidly discharges the output capacitor and reduces the input voltage. There is a 5μs latch delay built into the over voltage protection circuit. The RT8207N will be latched if the output voltage remains above the OV threshold after the latch delay period and can then only be released by VDD power on reset or S5. Note that latching the LGATE high will cause the output voltage to dip slightly negative when energy has been previously stored in the LC tank circuit. For loads that cannot tolerate a negative voltage, place a power Schottky diode across the output to act as a reverse polarity clamp. If the over voltage condition is caused by a short in high side switch, turning the low side MOSFET on 100% will create an electrical short between the battery and GND, hence blowing the fuse and disconnecting the battery from the output. Output Under Voltage Protection (UVP) The output voltage can be continuously monitored for under voltage. When enabled, the under voltage protection is triggered if the output is less than 70% of its set voltage threshold. Then, both UGATE and LGATE gate drivers will be forced low while entering soft discharge mode. During soft-start, the UVP has a blanking time around 5ms. is a registered trademark of Richtek Technology Corporation. DS8207N-00 June 2012 RT8207N Thermal Protection VTT Linear Regulator and VTTREF The RT8207N monitors the temperature of itself. If the temperature exceeds the threshold value, 165°C (typ.), the PWM output, VTTREF and VTT will be shut off. The RT8207N is latched once thermal shutdown is triggered and can only be released by VDD power on reset or S5. The RT8207N integrates a high performance low dropout linear regulator that is capable of sourcing and sinking currents up to 1.5A. This VTT linear regulator employs ultimate fast response feedback loop so that small ceramic capacitors are enough for keeping track of VTTREF within 40mV at all conditions, including fast load transient. To achieve tight regulation with minimum effect of wiring resistance, a remote sensing terminal, VTTSNS, should be connected to the positive node of the VTT output capacitor(s) as a separate trace from the VTT pin. For stable operation, total capacitance of the VTT output terminal can be equal to or greater than 20μF. It is recommended to attach two 10μF ceramic capacitors in parallel to minimize the effect of ESR and ESL. If ESR of the output capacitor is greater than 2mΩ, insert an RC filter between the output and VTTSNS input to achieve loop stability. The RC filter time constant should be almost the same or slightly lower than the time constant made by the output capacitor and its ESR. The VTTREF block consists of on-chip 1/2 divider, LPF and buffer. This regulator also has sink and source capability up to 10mA. Bypass VTTREF to GND with a 33nF ceramic capacitor for stable operation. Output Voltage Setting (FB) The RT8207N can be used as DDR2 (VVDDQ = 1.8V) and DDR3 (VVDDQ = 1.5V) power supply or as an adjustable output voltage (0.75V < VVDDQ < 3.3V) by connecting the FB pin according to Table 1. Table 1. FB and Output Voltage Setting VTTREF NOTE FB VDDQ (V) and VTT VDD 1.8 V VDDQ / 2 DDR2 GND 1.5 V VDDQ /2 DDR3 FB Resistors Adjustable V VDDQ / 2 0.75V < V VDDQ < 3.3V Connect a resistive voltage divider at FB between VDDQ and GND to adjust the respective output voltage between 0.75V and 3.3V (Figure 6). Choose R2 to be approximately 10kΩ and solve for R1 using the equation as follows : ⎛ ⎛ R1 ⎞ ⎞ VVDDQ = VREF x ⎜ 1 + ⎜ ⎟⎟ ⎝ ⎝ R2 ⎠ ⎠ where VREF is 0.75V (typ.). VIN VVDDQ UGATE PHASE LGATE R1 TSS = VDDQ FB R2 GND Figure 6. Setting VDDQ with a Resistive Voltage Divider Copyright © 2012 Richtek Technology Corporation. All rights reserved. DS8207N-00 June 2012 VDD sources the load of VTTREF to follow half voltage of VDDQ. If VTTREF capacitor is so large that the VTTREF is unable to follow half VDDQ voltage at time during soft start period, VTTREF will sink large current from VDD which causes large voltage drop at VDDP to VDD resistor and has the opportunity of UVLO. The following equation provides the maximum value of VTTREF capacitor calculation. V 0.03 × T = C VTTREF × VDDQ 1.1× R VDD + 12 SS 2 VVDDQ × COUT 0.03 + t × VIN RDS ON 2L CVTTREF = V × COUT 0.03 2 × × VDDQ VVDDQ 1.1× R VDD + 12 0.03 V + t × IN RDS ON 2L Where RVDD is the resistor between VDDP and VDD pin. RDS is the turn on resistor of low-side MOSFET. CVTTREF is the capacitor on the VTTREF pin. TSS is the soft start time for VDDQ at the no load condition. is a registered trademark of Richtek Technology Corporation. www.richtek.com 19 RT8207N Output Management by S3, S5 Control In DDR2/DDR3 memory applications, it is important to always keep VDDQ higher than VTT/VTTREF, even during start up and shutdown. The RT8207N provides this management by simply connecting both S3 and S5 terminals to the sleep-mode signals such as SLP_S3 and SLP_S5 in notebook PC system. All VDDQ, VTTREF and VTT are turned on at S0 state (S3 = S5 = high). In S3 state (S3 = low, S5 = high), VDDQ and VTTREF voltages are kept on while VTT is turned off and left at high impedance (high-Z) state. The VTT output is floated and does not sink or source current in this state. In S4/S5 states (S3 = S5 = low), all of the three outputs are disabled. Outputs are discharged to ground according to the discharge mode selected by the MODE pin (see VDDQ and VTT Discharge Control section). The code of each state represents the following: S0 = full ON, S3 = suspend to RAM (STR), S4 = suspend to disk (STD), S5 = soft OFF. (See Table 2) S5 VDDQ VTTREF VTT On On On S0 Hi Hi S3 Lo Hi S4/S5 Lo On On Off (Hi-Z) Off Off Off Lo (Discharge) (Discharge) (Discharge) VDDQ and VTT Discharge Control The RT8207N discharges VDDQ, VTTREF and VTT outputs when S5 is low or in the S4/S5 state. There are two different discharge modes. The discharge mode is set by connecting the MODE pin according to Table 3. Table 3. Discharge Selection MODE Discharge Mode VDD No discharge VDDQ Tracking discharge GND Non-tracking discharge When in tracking discharge mode, the RT8207N discharges outputs through the internal VTT regulator transistors and VTT output tracks half of the VDDQ voltage during this discharge. Note that the VDDQ discharge current flows via VLDOIN to VTTGND; thus VLDOIN must be connected to VDDQ in this mode. The internal LDO Copyright © 2012 Richtek Technology Corporation. All rights reserved. www.richtek.com 20 When in non-tracking discharge mode, the RT8207N discharges outputs using internal MOSFETs which are connected to VDDQ and VTT. The current capability of these MOSFETs is limited to discharge slowly. Note that the VDDQ discharge current flows from VDDQ to GND in this mode. When in no discharge mode, the RT8207N does not discharge output charge at all. Output Inductor Selection The switching frequency (on-time) and operating point (% ripple or LIR) determine the inductor value as follows : t × (VIN − VVDDQ ) L = ON LIR × ILOAD(MAX) where LIR is the ratio of the peak-to-peak ripple current to the maximum average inductor current. Table 2. S3 and S5 Truth Table STATE S3 can handle up to 1.5A and discharge quickly. After VDDQ is discharged down to 0.15V, the terminal LDO will be turned off and the operation mode is changed to the nontracking discharge mode. Find a low loss inductor having the lowest possible DC resistance that fits in the allotted dimensions. Ferrite cores are often the best choice, although powdered iron is inexpensive and can work well at 200kHz. The core must be large enough not to saturate at the peak inductor current (IPEAK) : IPEAK = ILOAD(MAX) + ⎡⎣(LIR /2) × ILOAD(MAX) ⎤⎦ This inductor ripple current also impacts transient-response performance, especially at low VIN − VVDDQ differences. Low inductor values allow the inductor current to slew faster, replenishing charge removed from the output filter capacitors by a sudden load step. The peak amplitude of the output transient (VSAG) is also a function of the output transient. VSAG also features a function of the maximum duty factor, which can be calculated from the on-time and minimum off-time : VSAG = (ΔILOAD )2 × L × (tON + tOFF(MIN) ) 2 × COUT × VVDDQ × ⎡⎣ VIN × tON − VVDDQ × (tON + tOFF(MIN) )⎤⎦ where minimum off-time, tOFF(MIN), is 400ns typically. is a registered trademark of Richtek Technology Corporation. DS8207N-00 June 2012 RT8207N Output Capacitor Selection The output filter capacitor must have low enough ESR to meet output ripple and load-transient requirements, yet have high enough ESR to satisfy stability requirements. Also, the capacitance must be high enough to absorb the inductor energy going from a full-load to no-load condition without tripping the OVP circuit. For CPU core voltage converters and other applications where the output is subject to violent load transients, the output capacitor's size depends on how much ESR is needed to prevent the output from dipping too low under a load transient. Ignoring the sag due to finite capacitance : VP−P ESR ≤ ILOAD(MAX) In non-CPU applications, the output capacitor's size depends on how much ESR is needed to maintain an acceptable level of output voltage ripple : VP−P ESR ≤ LIR × ILOAD(MAX) where VP−P is the peak-to-peak output voltage ripple. Organic semiconductor capacitor(s) or specialty polymer capacitor(s) are recommended. For low input-to-output voltage differentials (VIN/VVDDQ < 2), additional output capacitance is required to maintain stability and good efficiency in ultrasonic mode. The amount of overshoot due to stored inductor energy can be calculated as : (IPEAK )2 × L VSOAR = 2 × COUT × VVDDQ where IPEAK is the peak inductor current. Output Capacitor Stability Stability is determined by the value of the ESR zero relative to the switching frequency. The point of instability is given by the following equation : f 1 fESR = ≤ SW 2 × π × ESR × COUT 4 Do not put high value ceramic capacitors directly across the outputs without taking precautions to ensure stability. Large ceramic capacitors can have a high ESR zero frequency and cause erratic, unstable operation. However, Copyright © 2012 Richtek Technology Corporation. All rights reserved. DS8207N-00 June 2012 it is easy to add enough series resistance by placing the capacitors a couple of inches downstream from the inductor and connecting VDDQ or the FB voltage-divider close to the inductor. Unstable operation manifests itself in two related and distinctly different ways: double-pulsing and feedback loop instability. Double-pulsing occurs due to noise on the output or because the ESR is so low that there is not enough voltage ramp in the output voltage signal. This “fools” the error comparator into triggering a new cycle immediately after the 400ns minimum off-time period has expired. Double pulsing is more annoying than harmful, resulting in nothing worse than increased output ripple. However, it may indicate the possible presence of loop instability, which is caused by insufficient ESR. Loop instability can result in oscillations at the output in the form of line or load perturbations, which can trip the over voltage protection latch or cause the output voltage to fall below the tolerance limit. The easiest method for checking stability is to apply a very fast zero-to-max load transient and carefully observe the output-voltage-ripple envelope for overshoot and ringing. It helps to simultaneously monitor the inductor current with an AC current probe. Do not allow more than one cycle of ringing after the initial step-response under- or over-shoot. Thermal Considerations For continuous operation, do not exceed absolute maximum junction temperature. The maximum power dissipation depends on the thermal resistance of the IC package, PCB layout, rate of surrounding airflow, and difference between junction and ambient temperature. The maximum power dissipation can be calculated by the following formula : PD(MAX) = (TJ(MAX) − TA) / θJA where TJ(MAX) is the maximum junction temperature, TA is the ambient temperature, and θJA is the junction to ambient thermal resistance. is a registered trademark of Richtek Technology Corporation. www.richtek.com 21 RT8207N For recommended operating condition specifications, the maximum junction temperature is 125°C. The junction to ambient thermal resistance, θJA, is layout dependent. For WQFN-24L 4x4 package, the thermal resistance, θJA, is 52°C/W on a standard JEDEC 51-7 four-layer thermal test board. The maximum power dissipation at TA = 25°C can be calculated by the following formula : ` Keep current limit setting network as close as possible to the IC. Routing of the network should avoid coupling to high voltage switching node. ` Connections from the drivers to the respective gate of the high side or the low side MOSFET should be as short as possible to reduce stray inductance. ` All sensitive analog traces and components such as VDDQ, FB, PGND, PGOOD, CS, VDD, and TON should be placed away from high voltage switching nodes such as PHASE, LGATE, UGATE, and BOOT to avoid coupling. Use internal layer(s) as ground plane(s) and shield the feedback trace from power traces and components. ` VLDOIN should be connected to VDDQ output with short and wide trace. If different power source is used for VLDOIN, an input bypass capacitor should be placed as close as possible to the pin with short and wide trace. ` The output capacitor for VTT should be placed close to the pin with short and wide connection in order to avoid additional ESR and/or ESL of the trace. ` It is strongly recommended to connect VTTSNS to the positive node of VTT output capacitor(s) as a separate trace from the high current power line to avoid additional ESR and/or ESL. If it is needed to sense the voltage of the point of the load, it is recommended to attach the output capacitor(s) at that point. It is also recommended to minimize any additional ESR and/or ESL of ground trace between the GND pin and the output capacitor(s). Layout Considerations ` Layout is very important in high frequency switching converter design. If designed improperly, the PCB could radiate excessive noise and contribute to the converter instability. Certain points must be considered before starting a layout for the RT8207N. Current sense connections must always be made using Kelvin connections to ensure an accurate signal, with the current limit resistor located at the device. ` Power sections should connect directly to ground plane(s) using multiple vias as required for current handling (including the chip power ground connections). Power components should be placed as close to the IC as possible to minimize loops and reduce losses. PD(MAX) = (125°C − 25°C) / (52°C/W) = 1.923W for WQFN-24L 4x4 package The maximum power dissipation depends on the operating ambient temperature for fixed T J(MAX) and thermal resistance, θJA. The derating curves in Figure 7 allow the designer to see the effect of rising ambient temperature on the maximum power dissipation. Maximum Power Dissipation (W)1 2.0 Four-Layer PCB 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 0 25 50 75 100 125 Ambient Temperature (°C) Figure 7. Derating Curve of Maximum Power Dissipation ` Connect an RC low pass filter from VDDP to VDD; 1μF and 5.1Ω are recommended. Place the filter capacitor close to the IC. Copyright © 2012 Richtek Technology Corporation. All rights reserved. www.richtek.com 22 is a registered trademark of Richtek Technology Corporation. DS8207N-00 June 2012 RT8207N Outline Dimension D2 D SEE DETAIL A L 1 E E2 e 1 2 2 DETAIL A Pin #1 ID and Tie Bar Mark Options b A A3 1 Note : The configuration of the Pin #1 identifier is optional, but must be located within the zone indicated. A1 Dimensions In Millimeters Dimensions In Inches Symbol Min Max Min Max A 0.700 0.800 0.028 0.031 A1 0.000 0.050 0.000 0.002 A3 0.175 0.250 0.007 0.010 b 0.180 0.300 0.007 0.012 D 3.950 4.050 0.156 0.159 D2 2.300 2.750 0.091 0.108 E 3.950 4.050 0.156 0.159 E2 2.300 2.750 0.091 0.108 e L 0.500 0.350 0.020 0.450 0.014 0.018 W-Type 24L QFN 4x4 Package Richtek Technology Corporation 5F, No. 20, Taiyuen Street, Chupei City Hsinchu, Taiwan, R.O.C. Tel: (8863)5526789 Richtek products are sold by description only. Richtek reserves the right to change the circuitry and/or specifications without notice at any time. Customers should obtain the latest relevant information and data sheets before placing orders and should verify that such information is current and complete. Richtek cannot assume responsibility for use of any circuitry other than circuitry entirely embodied in a Richtek product. Information furnished by Richtek is believed to be accurate and reliable. However, no responsibility is assumed by Richtek or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Richtek or its subsidiaries. DS8207N-00 June 2012 www.richtek.com 23