2SK2701A

2-2 MOS FETs
Specifications List by Part Number
Absolute Maximum Ratings
Part
Number
2SK2420
VDSS
VGSS
ID
ID (pulse)
PD
(V)
(V)
(A)
(A)
(W)
IGSS
EAS
(mJ)
(nA)
max
VTH
IDSS
Conditions
VGS
(V)
(µA)
min
max
Conditions
VDS
(V)
(V)
min
max
Conditions
VDS
ID
(V)
(µA)
60
±20
±30
±120
40
38
±100
±20
100
60
2.0
4.0
10
2SK2701A
450
±30
±7
±28
35
130
±100
±30
100
450
2.0
4.0
10
250
1m
2SK2803
450
±30
±3
±12
30
30
±100
±30
100
450
2.0
4.0
10
1m
250
2SK2848
600
±30
±2
±8
30
10
±100
±30
100
600
2.0
4.0
10
2SK2943
900
±30
±3
±12
30
60
±100
±30
100
900
2.0
4.0
10
1m
2SK3003
200
±20
±18
±72
35
120
±100
±20
100
200
2.0
4.0
10
1m
2SK3004
250
±20
±18
±72
35
120
±100
±20
100
250
2.0
4.0
10
1m
2SK3199
500
±30
±5
±20
30
35
±100
±30
100
500
2.0
4.0
10
1m
2SK3710
60
±20
±70
±140
90
468
±10µ
±15
100
60
2.0
4.0
10
1m
±10µ
+15
100
60
2.0
4.0
10
1m
±10
±15
100
40
2.0
4.0
10
1m
2SK3711
60
±20
±70
±140
130
2SK3800
40
±20
±70
±140
80
400
2SK3801
40
±20
±70
±140
100
400
±10
±15
100
40
2.0
4.0
10
1m
EKV550
50
±20
±50
±150
85
150
±10µ
±20
100
50
3.0
4.2
10
250
FKP202
200
±30
±45
±180
40
200
±100
±30
100
200
3.0
4.5
10
1m
FKP250A
250
±30
±50
±200
85
400
±100
±30
100
250
3.0
4.5
10
1m
FKP252
250
±30
±25
±100
40
200
±100
±30
100
250
3.0
4.5
10
1m
FKP253
250
±30
±20
± 80
40
160
±100
±30
100
250
3.0
4.5
10
1m
FKP280A
280
±30
±40
±160
85
400
±100
±30
100
280
3.0
4.5
10
1m
FKP300A
300
±30
±30
±120
85
400
±100
±30
100
300
3.0
4.5
10
1m
FKP330C
330
±30
±30
±120
85
500
±100
±30
100
330
3.0
4.5
10
1m
FKV460S
40
+20, –10
±60
±180
60
+10, –5µ
+20, –10
100
40
1.0
2.5
10
250
FKV550T
50
±20
±50
±150
35
150
±10µ
±20
100
50
1.0
2.5
10
250
FKV550N
50
±20
±50
±150
35
150
±10µ
±20
100
50
3.0
4.2
10
250
300
FKV575
50
±20
±75
±200
40
FKV660S
60
+20, –10
±60
±180
60
SKP202
200
±30
±45
±180
95
SKP253
250
±30
±20
± 80
40
150
Transistors
±100
±20
100
50
3.0
4.5
10
250
+10, –5µ
+20, –10
100
60
1.0
2.5
10
250
200
±100
±30
100
200
3.0
4.5
10
1m
160
±100
±30
100
250
3.0
4.5
10
1m
2-2 MOS FETs
Electrical Characteristics
Re (yfs)
Conditions
(S)
ID
VDS
typ
(V)
(A)
min
13
Ciss
(pF)
typ
20
10
15
2200
3.5
5
20
3.5
720
1.5
2.1
20
1.5
340
1.2
1.7
20
1
1.8
2.8
20
7
11
7
Crss
(pF)
typ
Mass
RDS (ON)
Conditions
VDS
VGS
(V)
(V)
Conditions
VGS
ID
(V)
(A)
(Ω)
typ
max
(Ω)
typ
max
Conditions
VGS
ID
(V)
(A)
Package
(g)
TO220F(FM20)
2.0
3.5
TO220F(FM20)
2.0
1.5
TO220F(FM20)
2.0
1
TO220F(FM20)
2.0
10
1.5
TO220F(FM20)
2.0
175m
10
9
TO220F(FM20)
2.0
0.2
0.25
10
9
TO220F(FM20)
2.0
1.2
1.5
10
2.5
TO220F(FM20)
2.0
0
25
21m
62
0
10
0.84
1.1
10
26
0
10
2.1
2.8
10
290
30
0
10
3
3.8
10
1.5
600
40
0
10
4
5
10
9
850
250
0
10
130m
11
10
9
850
250
0
10
3.5
5.2
20
2.5
650
110
0
10
30
80
10
35
8000
1000
0
10
5m
6m
10
35
TO220S(Surface-mount) 1.5
30
80
10
35
8000
1000
0
10
5m
6m
10
35
TO3P(MT100)
30
50
10
35
5100
860
0
10
5m
6m
10
35
TO220S(Surface-mount) 1.5
30
50
17
28m
10
15
6.0
10
35
5100
860
0
10
5m
6m
10
35
TO3P(MT100)
6.0
10
25
2000
500
0
10
12m
15m
10
25
TO220
2.0
18
28
10
22
2000
80
0
25
45m
53m
10
22
TO220F(FM20)
2.0
30
42
10
25
3800
210
0
25
37m
43m
10
25
TO3PF(FM100)
6.5
13
21
10
12
2000
70
0
25
68m
75m
10
12
TO220F(FM20)
2.0
8
17
10
10
1600
50
0
25
86m
95m
10
10
TO220F(FM20)
2.0
25
38
10
20
3800
190
0
25
46m
53m
10
20
TO3PF(FM100)
6.5
20
33
10
15
3800
180
0
25
57m
65m
10
15
TO3PF(FM100)
6.5
23
37
10
15
4600
220
0
25
50m
63m
10
15
TO3PF(FM100)
6.5
20
10
25
2800
600
0
10
7m
9m
10
25
TO220S(Surface-mount) 1.5
20
10
25
2700
500
0
10
10m
13m
10
25
TO220F(FM20)
2.0
17
10
25
2000
500
0
10
12m
15m
10
25
TO220F(FM20)
2.0
30
10
37
3200
750
0
10
7m
10m
10
37
TO220F(FM20)
2.0
20
10
25
2500
150
0
10
11m
14m
10
25
TO220S(Surface-mount) 1.5
18
28
10
22
2000
80
0
25
45m
53m
10
22
TO263(Surface-mount)
1.5
8
17
10
10
1600
50
0
25
86m
95m
10
10
TO263(Surface-mount)
1.5
Transistors
151
Package Type (Dimensions)
• TO-220F (FM20)
• TO-220 (MT-25)
• TO-3P (MT-100)
φ 3.2 ±0.1
2.0
19.9±0.3
4.0
13.1±0.5
2.4±0.2
2 +0.2
−0.1
20.0min
3.5
±0.2
0.5 −0.1
2.54±0.2
0.45+0.2
−0.1
3 +0.2
−0.1
1.05+0.2
−0.1
5.45 ±0.1
B
10±0.2
5.45 ±0.1
E
C
2.2±0.2
(1) (2) (3)
• TO-3PF (FM100)
• MT-200
• TO-220S
±0.2
10.2±0.3
9
5.45±0.1
4.4
0.65+0.2
−0.1
1.05 +0.2
−0.1
5.45 ±0.1
5.45 ±0.1
B
1.5
C
0.6 +0.2
−0.1
1.2±0.2
3.0 +0.3
−0.1
(1.5)
a: Part Number
b: Polarity
c: Lot No.
2.54±0.5
q
w
e
10.2+0.3
E
2
3
• TO3P-5Pin
1.30 +0.10
–0.05
PNP
(Including pulling
out the burr)
Gate burr
(Measured at the root)
(Measured at the root)
(Including the solder drip)
2.40±0.20
(R0.30)
2.54±0.30
4.90±0.20
0.80±0.10
2.54±0.20
(Including pulling
out the burr)
Gate burr
0.10±0.15
(0.75) 2.00±0.10
9.20±0.20
1.20±0.20
NPN
4.50±0.20
15.30±0.30
(0.40)
1.40±0.20
(1)
(2) (3)
10.00±0.20
0.4±0.1
a: Part Number
b: Lot No.
• TO-263
2.54±0.20
+0.3
+0.2
0.86 –0.1
3
+0.3
4.1max
20.0min
1.27±0.2
2
2.54±0.5
3.35±0.2
+0.2
0.1 –0.1
2.59±0.2
1
1.27±0.10
(1.5)
8.6±0.3
c
3.0 –0.5
21.4±0.3
b
b
a: Part Number
b: Lot No.
9.90±0.20
1.3±0.2
0.50 +0.10
–0.05
(Including the solder drip)
1.5
a
a
3.0
1.6
(16.2)
0.8
1.75±0.15
2.15±0.15
1.05+0.2
−0.1
5.45±0.1
4.44±0.2
7
5.5
0.8
2.1
2-φ 3.2 ±0.1
φ 3.3±0.2
a
b
3.3
23.0 ±0.3
9.5 ±0.2
24.4 ±0.2
5.5±0.2
3.45±0.2
a: Part Number
b: Lot No.
6.0 ±0.2
36.4 ±0.3
15.6±0.2
1.7 +0.2
−0.1
(1.4)
a: Part Number
b: Lot No.
0.65+0.2
−0.1
10.0 –0.5
2.54
2.0 ±0.1
a
b
±0.15
3.9
13.0min
2.54
4.8 ±0.2
2.4
1.35±0.15
1.35±0.15
0.85+0.2
−0.1
9.6 ±0.2
±0.2
(3)
0.8 ±0.2
a
b
4.5±0.2
1.3±0.2
5.0 ±0.7
2.8±0.2
9.2±0.3
φ 3.6±0.2
φ 3.3±0.2
15.9±0.3
9.9±0.3
(8.7)
18.95MAX
(1.7)
4.0 ±0.3
16.0 ±0.3
8.4 ±0.2
(1.3)
15.6 ±0.3
4.2±0.2
C
2.8±0.2 0.5
10.0±0.2
(Measured at the root)
(Measured at the root)
(Measured at the root)
(Measured at the root)
(Unit : mm)
Transistors
171