2-3 IGBT Selection Guide By VCES VCES (V) 330 330 400 600 600 600 600 600 600 IC (A) 20 30 20 20 25 30 30 50 50 PC (W) 35 35 35 35 60 60 60 150 150 Part Number Package FGT312 FGT313 FGT412 FGT612 FGM622S FGM603 FGM623S MGD623N MGD623S TO220F(FM20) TO220F(FM20) TO220F(FM20) TO220F(FM20) TO3PF(FM100) TO3PF(FM100) TO3PF(FM100) TO3P(MT100) TO3P(MT100) Transistors 153 2-3 IGBT Specifications List by Part Number Absolute Maximum Ratings (Ta=25°C) Part Number VCES VGE IC IC(pulse) PC (Ta=25°C) (V) (V) (A) (A) (W) IGES ICES VGE(th) Conditions Conditions Conditions (nA) (V) VGE (µA) VCE IC VCE max min max (mA) (V) (V) max (V) VCE(sat) Conditions (V) IC VGE typ max (A) (V) Cies Coes Cres (pF) typ (pF) typ (pF) typ Conditions VGE VCE (V) (V) FGM603 600 ±20 30 90 60 ±100 ±20 100 600 4 7 1 10 1.6 2.0 30 15 4600 110 80 20 FGM622S 600 ±30 25 75 60 ±500 ±30 100 600 4 7 1 10 1.7 1.9 25 15 1300 80 40 20 0 FGM623S 600 ±30 30 100 60 ±500 ±30 100 600 3 6 1 10 1.5 1.7 30 15 2500 150 80 20 0 0 FGT312 330 ±30 20 120 35 ±100 ±30 100 330 3 6 1 10 1.3 1.7 20 15 1200 130 65 20 0 FGT313 330 ±30 30 200 35 ±100 ±30 100 330 3 6 1 10 1.3 1.7 30 15 2400 110 60 30 0 FGT412 400 ±30 20 120 35 ±100 ±30 100 400 3 6 1 10 1.4 1.8 20 15 1200 120 65 20 0 FGT612 600 ±30 20 120 35 ±100 ±30 100 600 3 6 1 10 1.6 2.0 20 15 1200 80 40 20 0 MGD623N 600 ±30 50 100 150 ±100 ±30 100 600 3 6 1 10 1.7 2.3 50 15 2500 150 80 20 0 MGD623S 600 ±30 50 100 150 ±100 ±30 100 600 3 6 1 10 1.8 2.4 50 15 2500 150 80 20 0 154 Transistors 2-3 IGBT Electrical Characteristics (Ta=25°C) td(off) tr td(on) tf (ns) typ (ns) typ (ns) typ (ns) typ Qg IC (A) Conditions VCE (V) (nC) typ Qge (nC) typ Qgc (nC) typ VF IC (A) Conditions VCE VGE (V) (V) (V) typ Mass trr Conditions IF (µs) (A) typ max Conditions IF di/dt (A) (A/µs) Package (g) 130 70 340 200 30 300 L Load 120 30 30 30 300 15 TO3PF(FM100) 6.5 50 60 200 120 25 300 L Load 40 10 10 25 300 15 TO3PF(FM100) 6.5 100 80 300 120 30 300 L Load 65 20 20 30 300 15 TO3PF(FM100) 6.5 15 30 55 210 20 150 R Load 35 8 10 20 150 15 TO220F(FM20) 2.0 20 90 90 180 60 250 R Load 65 10 20 60 250 15 TO220F(FM20) 2.0 15 35 55 220 20 200 R Load 35 8 10 20 200 15 TO220F(FM20) 2.0 25 60 70 190 20 300 R Load 35 6 9 20 300 15 TO220F(FM20) 2.0 75 70 250 200 50 300 L Load 65 15 20 50 300 15 1.2 1.6 30 0.3 30 100 TO3P(MT100) 6.0 Built-in Di 75 70 250 120 50 300 L Load 65 15 20 50 300 15 1.2 1.6 30 0.3 30 100 TO3P(MT100) 6.0 Built-in Di Transistors 155 Package Type (Dimensions) • TO-220F (FM20) • TO-220 (MT-25) • TO-3P (MT-100) φ 3.2 ±0.1 2.0 19.9±0.3 4.0 13.1±0.5 2.4±0.2 2 +0.2 −0.1 20.0min 3.5 ±0.2 0.5 −0.1 2.54±0.2 0.45+0.2 −0.1 3 +0.2 −0.1 1.05+0.2 −0.1 5.45 ±0.1 B 10±0.2 5.45 ±0.1 E C 2.2±0.2 (1) (2) (3) • TO-3PF (FM100) • MT-200 • TO-220S ±0.2 10.2±0.3 9 5.45±0.1 4.4 0.65+0.2 −0.1 1.05 +0.2 −0.1 5.45 ±0.1 5.45 ±0.1 B 1.5 C 0.6 +0.2 −0.1 1.2±0.2 3.0 +0.3 −0.1 (1.5) a: Part Number b: Polarity c: Lot No. 2.54±0.5 q w e 10.2+0.3 E 2 3 • TO3P-5Pin 1.30 +0.10 –0.05 PNP (Including pulling out the burr) Gate burr (Measured at the root) (Measured at the root) (Including the solder drip) 2.40±0.20 (R0.30) 2.54±0.30 4.90±0.20 0.80±0.10 2.54±0.20 (Including pulling out the burr) Gate burr 0.10±0.15 (0.75) 2.00±0.10 9.20±0.20 1.20±0.20 NPN 4.50±0.20 15.30±0.30 (0.40) 1.40±0.20 (1) (2) (3) 10.00±0.20 0.4±0.1 a: Part Number b: Lot No. • TO-263 2.54±0.20 +0.3 +0.2 0.86 –0.1 3 +0.3 4.1max 20.0min 1.27±0.2 2 2.54±0.5 3.35±0.2 +0.2 0.1 –0.1 2.59±0.2 1 1.27±0.10 (1.5) 8.6±0.3 c 3.0 –0.5 21.4±0.3 b b a: Part Number b: Lot No. 9.90±0.20 1.3±0.2 0.50 +0.10 –0.05 (Including the solder drip) 1.5 a a 3.0 1.6 (16.2) 0.8 1.75±0.15 2.15±0.15 1.05+0.2 −0.1 5.45±0.1 4.44±0.2 7 5.5 0.8 2.1 2-φ 3.2 ±0.1 φ 3.3±0.2 a b 3.3 23.0 ±0.3 9.5 ±0.2 24.4 ±0.2 5.5±0.2 3.45±0.2 a: Part Number b: Lot No. 6.0 ±0.2 36.4 ±0.3 15.6±0.2 1.7 +0.2 −0.1 (1.4) a: Part Number b: Lot No. 0.65+0.2 −0.1 10.0 –0.5 2.54 2.0 ±0.1 a b ±0.15 3.9 13.0min 2.54 4.8 ±0.2 2.4 1.35±0.15 1.35±0.15 0.85+0.2 −0.1 9.6 ±0.2 ±0.2 (3) 0.8 ±0.2 a b 4.5±0.2 1.3±0.2 5.0 ±0.7 2.8±0.2 9.2±0.3 φ 3.6±0.2 φ 3.3±0.2 15.9±0.3 9.9±0.3 (8.7) 18.95MAX (1.7) 4.0 ±0.3 16.0 ±0.3 8.4 ±0.2 (1.3) 15.6 ±0.3 4.2±0.2 C 2.8±0.2 0.5 10.0±0.2 (Measured at the root) (Measured at the root) (Measured at the root) (Measured at the root) (Unit : mm) Transistors 171