TF541S-A

3-1 Thyristors
Thyristors
Absolute Maximum Ratings
Part Number
V RSM
V DSM
V RRM
V DRM
IT (AV)
(V)
(V)
(A)
TF541S-A
500
400
5.0
SLA0201
650
600
5× 4
I T (RMS)
(50Hz)
Conditions
Tc
(°C)
(A)
88
ITSM
50Hz Single
Half Sine
Wave, Default
T j =125°C (A)
P GM
P G (AV)
V RGM
IFGM
Tj
T stg
(W)
(W)
(V)
(A)
(°C)
(°C)
I RRM
I DRM Conditions
Tj
(mA)
(°C)
max
7.8
80
5.0
0.5
5.0
2.0
–40 to +125
2.0
125
7.8
80
5.0
0.5
5.0
2.0
–40 to +125
2.0
125
TF561S-A
700
600
5.0
88
7.8
80
5.0
0.5
5.0
2.0
–40 to +125
2.0
125
TFA37S
–
700
3.0
127
4.7
60
5.0
0.5
5.0
2.0
–40 to +150
2.0
150
TFA57S
–
700
5.0
115
7.8
80
5.0
0.5
5.0
2.0
–40 to +150
2.0
150
TFA87S
–
700
8.0
98
12.6
120
5.0
0.5
5.0
2.0
–40 to +150
2.0
150
TFA107S
–
700
10
86
15.7
160
5.0
0.5
5.0
2.0
–40 to +150
2.0
150
TFA38S
–
800
3.0
50
4.7
60
5.0
0.5
5.0
2.0
–40 to +150
2.0
150
TFA58S
–
800
5.0
50
7.8
80
5.0
0.5
5.0
2.0
–40 to +150
2.0
150
TFA88S
–
800
8.0
50
12.6
120
5.0
0.5
5.0
2.0
–40 to +150
2.0
150
TFA108S
–
800
10
50
15.7
160
5.0
0.5
5.0
2.0
–40 to +150
2.0
150
3-Pin Reverse Conducting Thyristors for HID Lamp Ignition
Absolute Maximum Ratings
VDRM
I TRM*1
di/dt*1
P GM
PG (AV)
V RGM
I FGM*2
I FRM
Tj
Tstg
I DRM
Part Number
(V)
TFC563D
600
(A)
500
(A/µs)
1500
(W)
5.0
(W)
(V)
0.5
*1: TC≤100°C, VD≤430V, Wp≤1.0µs, IG≥70mA, dig/dt≥0.5A/µs, 100kcycles
*2: TC≤100°C, VD≤430V, Wp≤1.0µs, 100kcycles
176
Thyristors
5.0
(A)
2.0
(A)
450
(°C)
(°C)
–40 to +125
(mA)
max
1.0
VTM
Conditions
Tj
(°C)
125
(V)
max
1.4
Conditions
Tc
I TM
(°C)
(A)
25
10
3-1 Thyristors
Electrical Characteristics
V TM
V GT
(V)
max
1.4
1.4
Conditions
I TM
Tc
(°C)
(A)
(V)
typ
25
25
IGT
10
max
1.5
10
0.7
1.5
typ
VGD
(mA)
max
0.03
5.0
0.2
10
Conditions
Tc
(°C)
25
25
(V)
min
0.1
0.1
Tj
(°C)
125
125
dv/d t
Conditions
Conditions
Tj
VD
(V)
(V/µ s) (°C)
typ
1/2V DRM
1/2V DRM
20
50
125
125
IH
Mass
Rth
Package
VD
(V)
1/2V DRM
1/2V DRM
(mA)
typ
4.0
g
(°C/W)
max
4.0
TO220F
SIP12 with Fin
4.0
2.0
6.0
(SLA12Pin)
1.4
25
10
1.5
0.03
0.2
25
0.1
125
1/2V DRM
20
125
1/2V DRM
4.0
4.0
TO220F
2.0
1.5
25
10
−
1.0
7.0
15
25
0.2
125
1/2VDRM
300
125
1/2VDRM
15
4.1
TO220F
2.0
1.5
25
15
−
1.0
7.0
15
25
0.2
125
1/2VDRM
300
125
1/2VDRM
15
3.8
TO220F
2.0
1.4
25
20
−
1.0
7.0
15
25
0.2
125
1/2VDRM
300
125
1/2VDRM
20
3.5
TO220F
2.0
1.35
25
20
−
1.0
7.0
15
25
0.2
125
1/2VDRM
300
125
1/2VDRM
20
3.4
TO220F
2.0
1.5
25
10
−
1.0
−
15
25
0.2
125
1/2VDRM
300
125
1/2VDRM
15
4.1
TO220F
2.0
1.5
25
15
−
1.0
−
15
25
0.2
125
1/2VDRM
300
125
1/2VDRM
15
3.8
TO220F
2.0
1.5
25
20
−
1.0
−
15
25
0.2
125
1/2VDRM
300
125
1/2VDRM
20
3.5
TO220F
2.0
1.35
25
20
−
1.0
−
15
25
0.2
125
1/2VDRM
300
125
1/2VDRM
20
3.4
TO220F
2.0
IH
Rth
Thyristors
177
Electrical Characteristics
V GT
I GT
(V)
typ
max
1.5
typ
VGD
(mA)
max
30
Conditions
Tc
(°C)
25
(V)
min
0.1
Tj
(°C)
125
VD
(V)
480
(mA)
typ
12
(°C/W)
max
4.0
Mass
VF
Conditions
(V)
max
1.4
Conditions
IF
(A)
10
Package
(g)
TO-220S
1.5
Package Type (Dimensions)
2.76±0.2
±0.2
2.54
2.54±0.2
±0.2
10
3.9
±0.2
13.0min
0.8
9.75±0.5
13.1±0.5
0.5 ±0.1
±0.1
4.0 ±0.2
φ 3.3±0.2
a
b
±0.15
0.5 −0.1
4.2±0.2
C
2.8±0.2 0.5
8.4 ±0.2
15.8±0.2
2.4±0.2
(3)
9.2±0.3
15.9±0.3
18.95MAX
φ 3.2±0.2
φ 3.6±0.2
10.0±0.2
2.54±0.2
0.8 ±0.2
10.16±0.3
16.9 ±0.3
4.5±0.2
1.3±0.2
6.68±0.2
9.9±0.3
(8.7)
• TO-220F
15.87±0.3
2.8±0.2
• TO-220F-A
(1.3)
(1.7)
• TO-220
1.35±0.15
1.35±0.15
0.85+0.2
−0.1
0.45+0.2
−0.1
2.54
2.54
4.7±0.2
2.4±0.2
±0.2
2.2
(1) (2) (3)
a: Part Number
b: Lot No.
(1) (2) (3)
(1)(2)(3)
Pin No.
(1)
(2)
(3)
+0.2
3 +0.2
−0.1
1.05+0.2
−0.1
5.45 ±0.1
1.75 –0.1
+0.2
2.15 –0.1
0.65+0.2
−0.1
a: Part Number
b: Lot No.
(1) (2) (3)
(1.4)
5.45±0.1
(Measured
at the root)
+0.2
1.05 –0.1
5.45±0.1
15.6±0.2
1.5 4.4 1.5
0.86 -0.1
+0.2
1.3±0.2
0.65 –0.1
(Measured
at the root)
10.5
9.1±0.3
(0.45)
+0.2
1.34 -0.1
+0.2
1.7 +0.2
−0.1
5.45 ±0.1
3.35±0.2
(Measured
at the root)
4.44±0.2
2.6±0.2
(Measured
at the root)
11±0.5
20.0min
3.5
2 +0.2
−0.1
(5)
(2.69) (1.8)
a
b
1.6
3.3
a
b
23±0.3
φ 3.2 ±0.1
9.5±0.2
2.0 ±0.1
(16.2)
5.0 ±0.7
1.8
2.0
19.9±0.3
4.0
3.2±0.2
4.8 ±0.2
• TO-220S Straight
5.5±0.2
3.45±0.2
+0.3
-0.5
• TO-3PF
15.6 ±0.3
13.6 ±0.2
9.6 ±0.2
5.5±0.2
• TO-3P
Cathode (T1)
Anode (T2)
Gate (G)
( ): Triacs
0.76±0.1
a: Part Number
b: Lot No.
0.4±0.1
2.54±0.1
2.54±0.1
(Measured
at the root)
(Measured
at the root)
(1) (2) (3)
10.2±0.3
(1) Terminal 1 (T1)
(2) Terminal 2 (T2)
(3) Gate (G)
1
3
• SLA12Pin
4.7 ±0.2
11.3 ±0.2
9.0 ±0.2
2.3 ±0.2
b
a
2.54
C1.5±0.5
a: Part Number
b: Lot No.
4.8±0.2
1.7±0.1
a
b
Thy1
12
+0.2
0.85 −0.1
+0.2
1.45±0.15 0.55 −0.1
Pin 1
0.5±0.15
1.0±0.25
±0.25
17.78
Ellipse 3.2±0.15×3.8
31.0±0.2
24.4±0.2
16.4±0.2
φ 3.2±0.15
0.8max
40±0.2±0.2
20.2 ±0.2
9.5min (10.4) 16.0±0.2
13.0±0.2
2.7
9.9±0.2
8.5max
• STA8Pin
2
1.2±0.15
31.5max
4
5
6
7
8
T1 G T2 G T2 G T2 T1
3
TR1
2
1
5
7
TR2
4
1.2 ±0.2
3
0.5 ±0.15
2
1
2.2 ±0.7
11×P2.54±0.7=27.94±0.1
Thy2
Thy3
Thy4
1 2 3 4 1 5 6 7 8 9 10 11
a: Part Number
b: Lot No.
1 2 3 4 5 6 7 8 9 10 11 12
G K A G K A G K A G K A
TR3
6
8
(Unit: mm)
180
Thyristors