Characteristic curves SLA5086 P

SLA5086
P-channel
Absolute maximum ratings
(Ta=25°C)
General purpose
Ratings
Unit
Symbol
VDSS
VGSS
ID
–60
±20
–5
V
V
A
A
V(BR)DSS
IGSS
IDSS
VTH
Re(yfs)
RDS(ON)
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
VSD
trr
PT
θ j-a
θ j-c
VISO
Tch
Tstg
–10 (PW≤1ms, duty≤25%)
5 (Ta=25°C, with all circuits operating, without heatsink)
W
30 (Tc=25°C,with all circuits operating, with infinite heatsink)
25 (Junction-Air, Ta=25°C, with all circuits operating)
°C/W
4.17 (Junction-Case, Tc=25°C, with all circuits operating) °C/W
1000 (Between fin and lead pin, AC)
Vrms
150
°C
–40 to +150
°C
■Equivalent circuit diagram
1
2
•••
SLA (12-pin)
Electrical characteristics
Symbol
ID(pulse)
External dimensions A
(Ta=25°C)
Specification
min
typ
max
–60
±100
–100
–1.0
–2.0
4
6
0.14
0.22
790
310
90
40
110
160
80
–1.0
–1.5
85
Unit
Conditions
V
nA
µA
V
S
Ω
pF
pF
pF
ns
ns
ns
ns
V
ns
ID=–100µA, VGS=0V
VGS=±20V
VDS=–60V, VGS=0V
VDS=–10V, ID=–250µA
VDS=–10V, ID=–3A
VGS=–10V, ID=–3A
VDS=–10V,
f=1.0MHz,
VGS=0V
ID=–3A, VDD –20V,
RL=6.67Ω,
VGS=–5V,
see Fig. 4 on page 16.
ISD=–5A, VGS=0V
ISD=3A, VGS=0V, di/dt=100A/µs
12
4
6
3
8
5
10
7
9
11
Characteristic curves
ID-VDS Characteristics (Typical)
ID-VGS Characteristics (Typical)
(Ta=25°C)
RDS(ON)-ID Characteristics (Typical)
(VDS=–10V)
–10
–3.7V
0.25
–8
–8
–4V
–4
–4
Ta=125°C
–3.0V
VGS=–10V
0.15
0.10
25°C
–2
–2.7V
–2
0.20
RDS
–6
ID (A)
ID (A)
–3.3V
(ON) (Ω)
–3.5V
–6
(Ta=25°C)
0.30
–4
V
–10V
–10
0.05
VGS=–2.5V
–40°C
0
0
0
–2
–4
–6
–8
–10
0
–1
–2
–3
–4
0
0
–5
–2
–4
–6
VGS (V)
VDS (V)
Re(yfs)-ID Characteristics (Typical)
RDS(ON)-TC Characteristics (Typical)
(VDS=–10V)
50
–8
–10
ID (A)
Capacitance-VDS Characteristics (Typical)
(ID=–3A)
0.35
VGS=0V
(Ta=25°C) f=1MHz
5000
0.30
0.25
°C
25°C
125°C
1
VG
0.20
0.15
S=
–4
V
–10
Capacitance (pF)
–40
(ON) (Ω)
Ta =
RDS
Re (yfs) (S)
10
V
0.10
1000
Ciss
Coss
100
Crss
0.05
0.1
–0.05
–0.1
10
0
–40
–10
–1
0
50
ID (A)
IDR-VSD Characteristics (Typical)
(Ta=25°C)
–10
0
Safe Operating Area (SOA)
PT (W)
IM
IT
ED
(O
N)
L
S
RD
ID (A)
–1
0V
S=
–50
All Circuits Operating
30
s
–1
–40
35
1m
s
m
10
4V
–30
PT-Ta Characteristics
100µs
–6
VG
–20
40
–20
–10
–
–10
VDS (V)
–8
–4
25
W
ith
20
In
fin
ite
He
at
15
sin
k
0V
IDR (A)
150
100
TC (°C)
10
–2
0
0
–0.5
–1.0
VSD (V)
–1.5
–0.1
–0.1
Without Heatsink
5
TC=25°C
1-Circuit Operation
0
–1
–10
VDS (V)
–100
0
50
100
150
Ta (°C)
105