SLA5086 P-channel Absolute maximum ratings (Ta=25°C) General purpose Ratings Unit Symbol VDSS VGSS ID –60 ±20 –5 V V A A V(BR)DSS IGSS IDSS VTH Re(yfs) RDS(ON) Ciss Coss Crss td(on) tr td(off) tf VSD trr PT θ j-a θ j-c VISO Tch Tstg –10 (PW≤1ms, duty≤25%) 5 (Ta=25°C, with all circuits operating, without heatsink) W 30 (Tc=25°C,with all circuits operating, with infinite heatsink) 25 (Junction-Air, Ta=25°C, with all circuits operating) °C/W 4.17 (Junction-Case, Tc=25°C, with all circuits operating) °C/W 1000 (Between fin and lead pin, AC) Vrms 150 °C –40 to +150 °C ■Equivalent circuit diagram 1 2 ••• SLA (12-pin) Electrical characteristics Symbol ID(pulse) External dimensions A (Ta=25°C) Specification min typ max –60 ±100 –100 –1.0 –2.0 4 6 0.14 0.22 790 310 90 40 110 160 80 –1.0 –1.5 85 Unit Conditions V nA µA V S Ω pF pF pF ns ns ns ns V ns ID=–100µA, VGS=0V VGS=±20V VDS=–60V, VGS=0V VDS=–10V, ID=–250µA VDS=–10V, ID=–3A VGS=–10V, ID=–3A VDS=–10V, f=1.0MHz, VGS=0V ID=–3A, VDD –20V, RL=6.67Ω, VGS=–5V, see Fig. 4 on page 16. ISD=–5A, VGS=0V ISD=3A, VGS=0V, di/dt=100A/µs 12 4 6 3 8 5 10 7 9 11 Characteristic curves ID-VDS Characteristics (Typical) ID-VGS Characteristics (Typical) (Ta=25°C) RDS(ON)-ID Characteristics (Typical) (VDS=–10V) –10 –3.7V 0.25 –8 –8 –4V –4 –4 Ta=125°C –3.0V VGS=–10V 0.15 0.10 25°C –2 –2.7V –2 0.20 RDS –6 ID (A) ID (A) –3.3V (ON) (Ω) –3.5V –6 (Ta=25°C) 0.30 –4 V –10V –10 0.05 VGS=–2.5V –40°C 0 0 0 –2 –4 –6 –8 –10 0 –1 –2 –3 –4 0 0 –5 –2 –4 –6 VGS (V) VDS (V) Re(yfs)-ID Characteristics (Typical) RDS(ON)-TC Characteristics (Typical) (VDS=–10V) 50 –8 –10 ID (A) Capacitance-VDS Characteristics (Typical) (ID=–3A) 0.35 VGS=0V (Ta=25°C) f=1MHz 5000 0.30 0.25 °C 25°C 125°C 1 VG 0.20 0.15 S= –4 V –10 Capacitance (pF) –40 (ON) (Ω) Ta = RDS Re (yfs) (S) 10 V 0.10 1000 Ciss Coss 100 Crss 0.05 0.1 –0.05 –0.1 10 0 –40 –10 –1 0 50 ID (A) IDR-VSD Characteristics (Typical) (Ta=25°C) –10 0 Safe Operating Area (SOA) PT (W) IM IT ED (O N) L S RD ID (A) –1 0V S= –50 All Circuits Operating 30 s –1 –40 35 1m s m 10 4V –30 PT-Ta Characteristics 100µs –6 VG –20 40 –20 –10 – –10 VDS (V) –8 –4 25 W ith 20 In fin ite He at 15 sin k 0V IDR (A) 150 100 TC (°C) 10 –2 0 0 –0.5 –1.0 VSD (V) –1.5 –0.1 –0.1 Without Heatsink 5 TC=25°C 1-Circuit Operation 0 –1 –10 VDS (V) –100 0 50 100 150 Ta (°C) 105