SANKEN SLA5054

SLA5054
N-channel
General purpose
Absolute maximum ratings
External dimensions A
Unit
3
V
V
A
A
W
W
°C/W
°C/W
Vrms
°C
°C
6
8
10
12
14
FET-1
FET-1
FET-2
FET-2
FET-3
FET-3
2
5
7
9
11
13
1
15
Pin 4: NC
Electrical characteristics
(Ta=25°C)
FET1
Symbol
V(BR)DSS
IGSS
IDSS
VTH
Re(yfs)
RDS(ON)
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
VSD
trr
Specification
Unit
min typ max
150
V
100 nA
100 µA
1.0
2.0
V
7
12
S
80 105 mΩ
85 115 mΩ
1600
pF
380
pF
90
pF
35
ns
70
ns
125
ns
90
ns
1.0 1.5
V
320
ns
FET2
Conditions
ID=100µA, VGS=0V
VGS=20V
VDS=150V, VGS=0V
VDS=10V, ID=250µA
VDS=10V, ID=3.5A
VGS=10V, ID=3.5A
VGS=4V, ID=3.5A
VDS=10V
f=1.0MHz
VGS=0V
ID=3.5A
VDD 70V
RL=20Ω
VGS=5V
ISD=7A, VGS=0V
IF=±100mA
Specification
Unit
min typ max
150
V
100 nA
100 µA
1.0
2.0
V
3
5.5
S
330 440 mΩ
370 480 mΩ
380
pF
95
pF
25
pF
25
ns
50
ns
55
ns
40
ns
1.1 1.5
V
180
ns
FET3
Conditions
ID=100µA, VGS=0V
VGS=20V
VDS=150V, VGS=0V
VDS=10V, ID=250µA
VDS=10V, ID=2.5A
VGS=10V, ID=2.5A
VGS=4V, ID=2.5A
VDS=10V
f=1.0MHz
VGS=0V
ID=2.5A
VDD 70V
RL=28Ω
VGS=5V
ISD=5A, VGS=0V
IF=±100mA
Specification
Unit
min typ max
150
V
100 nA
100 µA
1.0
2.0
V
4
9
S
150 200 mΩ
170 230 mΩ
870
pF
320
pF
210
pF
25
ns
55
ns
80
ns
50
ns
1.0 1.5
V
500
ns
Conditions
ID=100µA, VGS=0V
VGS=20V
VDS=150V, VGS=0V
VDS=10V, ID=250µA
VDS=10V, ID=3.5A
VGS=10V, ID=3.5A
VGS=4V, ID=3.5A
VDS=10V
f=1.0MHz
VGS=0V
ID=3.5A
VDD 70V
RL=20Ω
VGS=5V
ISD=7A, VGS=0V
IF=±100mA
Characteristic curves
ID-VDS Characteristics (Typical)
FET1
FET2
FET3
7
5
10V
7
4V
10V
6
4
5
ID (A)
2.8V
ID (A)
ID (A)
4V
5
3
4
3
2.8V
4
2.6V
3
2
2.6V
2.4V
2
10V
6
4V
2.6V
2
1
2.4V
2.4V
1
1
VGS=2.2V
VGS=2.2V
VGS=2.2V
0
0
0
0
2
4
6
8
10
0
2
4
6
8
0
10
2
4
FET1
FET2
(VDS=10V)
7
6
8
10
VDS (V)
VDS (V)
VDS (V)
ID-VGS Characteristics (Typical)
FET3
(VDS=10V)
5
(VDS=10V)
7
6
6
4
3
3
ID (A)
ID (A)
–40°C
°C
25°C
5
4
Tc=125
4
3
2
125
25° °C
C
–40°C
1
1
Tc=
1
0
1
2
3
0
0
4
0
1
2
3
0
4
1
2
VGS (V)
VGS (V)
RDS(ON)-ID Characteristics (Typical)
125
°C
25°
C
–40°C
2
2
Tc=
ID (A)
5
0
FET1
3
4
VGS (V)
FET2
100
FET3
200
500
4V
4V
VGS=10V
400
(ON)
(mΩ)
VGS=10V
300
100
RDS
(ON)
40
RDS
(ON) (mΩ)
RDS
60
150
4V
VGS=10V
(mΩ)
80
200
50
20
100
0
0
1
2
SLA
■Equivalent circuit diagram
(Ta=25°C)
Ratings
Symbol
FET1
FET2
FET3
VDSS
150
VGSS
+20, –10
ID
±7
±5
±7
ID(pulse)*
±15
±10
±15
5 (Ta=25°C, with all circuits operating, without heatsink)
PT
35 (Tc=25°C, with all circuits operating, with infinite heatsink)
θ j-a
25 (Junction-Air, Ta=25°C, with all circuits operating)
θ j-c
3.57 (Junction-Case, Tc=25°C, with all circuits operating)
VISO
1000 (Between fin and lead pin, AC)
Tch
150
Tstg
–40 to +150
*PW≤100µs, duty≤50%
•••
3
4
ID (A)
5
6
7
0
0
1
2
3
ID (A)
4
5
0
0
1
2
3
4
ID (A)
5
6
7
SLA5054
FET1
FET2
(VDS=10V)
30
Re (yfs) (S)
TC
=–
5
5°
C
12
5
(VDS=10V)
20
10
°C
°C
40
Re (yfs) (S)
40
10
FET3
(VDS=10V)
10
25°C
TC
=–
°C
40
°
25
C
Re (yfs) (S)
Re(yfs)-ID Characteristics (Typical)
1
25°C
=–
TC
5
C
5°
12
25°C
1
1
1
0.5
0.5
0.3
0.05
0.1
0.5
1
5
0.5
0.3
0.05
7
0.1
0.5
ID (A)
RDS(ON)-TC Characteristics (Typical)
1
0.3
0.05
5
0.1
0.5
ID (A)
FET1
FET2
(ID=3.5A)
200
1
5
7
ID (A)
FET3
(ID=2.5A)
1.0
(ID=3.5A)
500
V
10
=
GS
4V
300
V
10
(ON)
4V
0.5
V
S=
VG
RDS
(ON)
(mΩ)
(Ω)
V
10
S=
VG
100
RDS
RDS (ON) (mΩ)
400
4V
200
100
0
–40
0
50
100
0
–40
150
0
50
TC (°C)
Capacitance-VDS Characteristics (Typical)
100
0
–40
150
0
50
FET1
FET2
VGS=0V
f=1MHz
5000
100
150
TC (°C)
TC (°C)
FET3
VGS=0V
f=1MHz
1000
VGS=0V
f=1MHz
5000
500
Capacitance (pF)
Capacitance (pF)
1000
500
Capacitance (pF)
Ciss
Ciss
100
Coss
50
1000
Ciss
500
Coss
Coss
100
100
Crss
Crss
10
50
0
10
20
30
40
50
10
20
30
40
50
0
10
20
FET1
FET2
7
30
40
50
VDS (V)
VDS (V)
VDS (V)
IDR-VSD Characteristics (Typical)
Crss
50
40
0
FET3
7
5
6
6
4
5
5
2
4V
10
V
4
4V
3
IDR (A)
VGS=0V
V
4V
4
3
10
IDR (A)
IDR (A)
10V
3
VGS=0V
VGS=0V
2
2
1
1
1
0
0
0.5
1.0
0
1.5
0.5
1.0
Safe Operating Area (SOA)
FET1
s
10
1m
ID (pulse) MAX
s
10
m
RDS (on) LIMITED
s
sh
ID (A)
ot
n)
)
S
ID (A)
1
0.5
1-circuit operation
1
s
M
LI
s
sh
1
5
10
50
100
200
VDS (V)
)
0.5
40
With Silicone Grease
Natural Cooling
All Circuits Operating
30
ith
W
25
ite
fin
In
k
in
ts
ea
H
20
15
10
Without Heatsink
5
0
0
50
100
Ta (°C)
150
s
(1
sh
ot
)
0.5
1-circuit operation
0.1
1-circuit operation
0.05
1
5
10
VDS (V)
PT-Ta Characteristics
35
0.01
0.5
m
RDS (on) LIMITED
ot
s
s
10
(1
0.05
0.01
0.5
0µ
s
m
(o
10
1m
ID (pulse) MAX
5
1m
10
RD
0.1
0.05
PT (W)
0µ
I
(1
(TC=25°C)
10
10
D
TE
1.5
20
ID (pulse) MAX
5
1.0
FET3
(TC=25°C)
20
0µ
0.1
0.5
FET2
10
5
0
VSD (V)
(TC=25°C)
20
10
0
1.5
VSD (V)
VSD (V)
ID (A)
0
50
100
200
0.01
0.5
1
5
10
VDS (V)
50
100
200