60V/2A N-Channel Trench MOSFET MSK2N06W 60V/2A N-Channel Trench MOSFET General Description • MSK2N06W has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for portable equipment. • MSK2N06W is available in the package of SOT-23. SOT-23 Features • VDSS=60V, ID=2A; • Drain-Source ON Resistance: RDS(ON) =160 mΩ (Max.) @ VGS=10V RDS(ON) =220 mΩ (Max.) @ VGS=4.5V • Super High Dense Cell Design • RoHS Compliant Pin Configuration (top view) 1: Gate 2: Source 3: Drain TAITRON COMPONENTS INCORPORATED www.taitroncomponents.com Tel: (800)-TAITRON Fax: (800)-TAITFAX (800)-824-8766 (800)-824-8329 (661)-257-6060 (661)-257-6415 Rev. A/CH Page 1 of 9 60V/2A N-Channel Trench MOSFET MSK2N06W Absolute Maximum Ratings (Ta=25ºC unless otherwise specified, Note) Symbol Description N-Channel Unit VDSS Drain-Source Voltage 60 V VGSS Gate-Source Voltage ± 20 V DC @Ta=25 ºC 2.0 DC @Ta=70 ºC 1.6 ID* Drain Current Continuous IDP* Drain Current –Pulsed PD* Power Dissipation RθJA* TJ TSTG A 10 A Ta=25ºC 1.25 Ta=70ºC 0.8 Thermal Resistance (Junction-to-Ambient) 100 °C/ W +150 °C -55 to +150 °C Junction Temperature Storage Temperature Range W Note: * Surface mounted on “1x1” FR4 board, t ≤5 seconds. Electrical Characteristics (T Ambient=25ºC unless noted otherwise) Off Characteristics Symbol Description V(BR)DSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current IGSS Gate-Source Leakage Current Min. Typ. Max. Unit Conditions 60 - - V VGS=0V, IDS=250µA - - 0.5 VDS=60V, VGS=0V uA VDS=60V, VGS=0V, Tj=55°C - - 10 - - ±100 nA VGS=±20V, VDS=0V Min. Typ. Max. Unit Conditions 1.5 - - V VDS=VGS, ID=250μA - 125 160 - 155 220 6 - - 4 - - - 4.6 - On Characteristics Symbol VGS(th) RDS(ON)* ID(ON) * gFS* Description Gate Threshold Voltage Drain-Source ON Resistance ON State Drain Current Forward Transconductance mΩ A S VGS=10V, ID=2A VGS=4.5V, ID=-1.7A VGS=10V,VDS≥4.5V VGS=-4.5V,VDS≥4.5V VDS=4.5V, ID=2.0A Rev. A/CH www.taitroncomponents.com Page 2 of 9 60V/2A N-Channel Trench MOSFET MSK2N06W Dynamic Characteristics Symbol Description Min. Typ. Max. Ciss Input Capacitance - 240 - Coss Output Capacitance - 30 - Crss Reverse Transfer Capacitance - 16 - Min. Typ. Max. Unit pF Conditions VDS=30V, VGS=0V, f=1MHz Switching Characteristics Symbol Description tD(on) * Turn-On Delay Time - 7 15 tr* Turn-On Rise Time - 10 20 tD(off)* Turn-Off Delay Time - 17 35 tf* Turn-Off Fall Time - 6 15 Qg* Total Gate Charge - 4.8 10 Qgs* Gate-Source Charge - 0.8 - Qgd* Gate-Drain Charge - 1.0 - Unit Conditions ns VDS=30V, RG=6Ω, ID=1A, VGS=4.5V nC VDS=30V, ID=2A VGS=10V Drain-Source Diode Characteristics and Maximum Ratings Symbol Is* Vsdf* Description Min. Typ. Max. Unit Conditions Source-Drain Diode Current - - 1.0 A - Source-Drain Diode Forward Voltage - 0.77 1.2 V Is=1A, VGS=0V Note: * Pulse test: Pulse width ≤300us, Duty cycle≤2%； Rev. A/CH www.taitroncomponents.com Page 3 of 9 60V/2A N-Channel Trench MOSFET MSK2N06W Typical Characteristics Curves Fig.2- ID vs. VGS Drain Current ID (A) Drain Current ID (A) Fig.1- ID vs. VDS Gate-Source Voltage VGS (V) Fig.3- Vth vs. TJ Fig.4- IS vs. VSDF Reverse Drain Current IS (A) Normalized Threshold Voltage Vth (V) Drain-Source Voltage VDS (V) Junction Temperature TJ (°C) Source-Drain Voltage VSDF (V) Rev. A/CH www.taitroncomponents.com Page 4 of 9 60V/2A N-Channel Trench MOSFET MSK2N06W Fig.6- RDS(ON) vs. ID Drain Source ON Resistance RDS(ON) (mΩ) Drain Source ON Resistance RDS(ON) (mΩ) Fig.5- RDS(ON) vs. TJ Drain Current ID (A) Junction Temperature TJ (°C) Fig.8- C vs. VDS Capacitance (pF) Gate-Source Voltage VGS (V) Fig.7- VGS vs. Qg Gate-Charge Qg (nC) Drain-Source Voltage VDS (V) Rev. A/CH www.taitroncomponents.com Page 5 of 9 60V/2A N-Channel Trench MOSFET MSK2N06W Drain Current ID (A) Fig.9- Safe Operation Area Drain-Source Voltage VDS (V) Normalized Transient Thermal Resistance Fig.10- Transient Thermal Response Curve Time t (sec) Rev. A/CH www.taitroncomponents.com Page 6 of 9 60V/2A N-Channel Trench MOSFET MSK2N06W Test Circuit and Waveform Fig.11-Gate Charge Circuit and Wave Form Fig.12-Resistive Load Switching Rev. A/CH www.taitroncomponents.com Page 7 of 9 60V/2A N-Channel Trench MOSFET MSK2N06W Dimensions in mm SOT-23 Rev. A/CH www.taitroncomponents.com Page 8 of 9 60V/2A N-Channel Trench MOSFET MSK2N06W How to contact us: US HEADQUARTERS 28040 WEST HARRISON PARKWAY, VALENCIA, CA 91355-4162 Tel: (800) TAITRON (800) 824-8766 (661) 257-6060 Fax: (800) TAITFAX (800) 824-8329 (661) 257-6415 Email: [email protected] Http://www.taitroncomponents.com TAITRON COMPONENTS MEXICO, S.A .DE C.V. BOULEVARD CENTRAL 5000 INTERIOR 5 PARQUE INDUSTRIAL ATITALAQUIA, HIDALGO C.P. 42970 MEXICO Tel: +52-55-5560-1519 Fax: +52-55-5560-2190 TAITRON COMPONENTS INCORPORATED REPRESENTAÇÕES DO BRASIL LTDA RUA DOMINGOS DE MORAIS, 2777, 2.ANDAR, SALA 24 SAÚDE - SÃO PAULO-SP 04035-001 BRAZIL Tel: +55-11-5574-7949 Fax: +55-11-5572-0052 TAITRON COMPONENTS INCORPORATED, SHANGHAI REPRESENTATIVE OFFICE METROBANK PLAZA, 1160 WEST YAN’ AN ROAD, SUITE 1503, SHANGHAI, 200052, CHINA Tel: +86-21-5424-9942 Fax: +86-21-5424-9931 Rev. A/CH www.taitroncomponents.com Page 9 of 9