2N7002 - Taitron Components, Inc.

Enhancement Mode
MOSFET (N-Channel)
2N7002
Enhancement Mode MOSFET (N-Channel)
Features
•
•
•
•
•
High density cell design for low RDS(ON)
Voltage controlled small signal switch
Rugged and reliable
High saturation current capability
RoHS Compliance
SOT-23
Mechanical Data
SOT-23, Plastic Package
Case:
Terminals:
Weight:
Solderable per MIL-STD-202G, Method 208
0.008 gram
Maximum Ratings (T Ambient=25ºC unless noted otherwise)
Symbol
Description
2N7002
Unit
Conditions
VDSS
Drain-Source Voltage
60
V
VDGR
Drain-Gate Voltage (RGS≤1MΩ)
60
V
VGSS
Gate-Source Voltage Continuous
±20
V
VGSM
Gate-Source Voltage Non-repetitive (tp≤50µS)
±40
V
115
mA
TC=25 ˚C
75
mA
TC=100 ˚C
800
mA
225
mW
TA=25 ˚C
1.8
mW/° C
Derate above 25 ˚C
556
° C/W
300
mW
TA=25 ˚C
2.4
mW/° C
Derate above 25 ˚C
417
° C/W
Junction Temperature
-55 to +150
°C
Storage Temperature Range
-55 to +150
°C
ID
Drain Current Continuous (Note 1)
IDM
Drain Current Pulsed (Note 2)
PD
Total Device Dissipation FR-5 Board (Note 3)
RthJA
PD
RthJA
TJ
TSTG
Max. Thermal Resistance, Junction to Ambient
Total Device Dissipation Alumina Substrate (Note 4)
Max. Thermal Resistance, Junction to Ambient
Note: 1. The Power Dissipation of thepackage may result in a lower continuous drain current.
TAITRON COMPONENTS INCORPORATED www.taitroncomponents.com
Tel: (800)-TAITRON
Fax: (800)-TAITFAX
(800)-824-8766
(800)-824-8329
(661)-257-6060
(661)-257-6415
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Enhancement Mode MOSFET (N-Channel)
2N7002
2. PulseTest: Pulse Width ≤ 300μs, Duty Cycle ≤ 2.0%.
3. FR-5=1.0 x 0.75 x 0.062 in.
4. Alumina=0.4 x 0.3 x 0.025 in 99.5% alumina.
Electrical Characteristics (T Ambient=25ºC unless noted otherwise)
Off Characteristics
Symbol
Description
V(BR)DSS
Drain-Source Breakdown Voltage
IDSS
Zero Gate Voltage Drain Current
Min.
Typ.
Max.
Unit
Conditions
60
-
-
V
VGS=0V, ID=10µA
-
-
1
-
-
500
VDS=60V, VGS=0V
μA
VDS=60V, VGS=0V, TJ=125 ˚C
IGSSF
Gate-Body Leakage, Forward
-
-
0.1
VDS=0V, VGS=20V
IGSSR
Gate-Body Leakage, Reverse
-
-
-0.1
Min.
Typ.
Max.
Unit
Conditions
1.0
1.6
2.0
V
VDS=VGS, ID=250μA
-
1.4
7.5
-
1.7
13.5
-
1.8
7.5
VGS=5V, ID=50mA
-
2.4
13.5
VGS=5V, ID=50mA, TJ=125 ˚C
-
0.6
3.75
-
0.09
0.375
On State Drain Current
500
2700
-
mA
VGS=10V,
VDS≥2VDS(ON)
Forward Transconductance
80
320
-
mS
VDS≥2VDS(ON), ID=200mA
VDS=0V, VGS=-20V
On Characteristics (Note 5)
Symbol
VGS(th)
RDS(ON)
VDS(ON)
ID(ON)
gFS
Description
Gate Threshold Voltage
Drain-Source ON Resistance
Drain-Source ON Voltage
VGS=10V, ID=500mA
Ω
V
VGS=10V, ID=500mA, TJ=125 ˚C
VGS=10V, ID=500mA
VGS=5V, ID=50mA
Rev. B/AH
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Page 2 of 6
Enhancement Mode MOSFET (N-Channel)
2N7002
Dynamic Characteristics (T Ambient=25ºC unless noted otherwise)
Symbol
Description
Min.
Typ.
Max.
Ciss
Input Capacitance
-
17
50
Crss
Reverse Transfer Capacitance
-
2.5
5.0
Coss
Output Capacitance
-
10
25
Unit
Conditions
pF
VDS=25V, VGS=0V,
f=1MHz
Unit
Conditions
Switching Characteristics (T Ambient=25ºC unless noted otherwise)
Symbol
Description
Min.
Typ.
Max.
ton
Turn-On Delay Time
-
7
20
toff
Turn-Off Delay Time
-
11
40
nS
VDD=25V, RL=50Ω
ID=500mA, VGS=10V,
RG=25Ω
Drain-Source Diode Ratings and Maximum Ratings
Symbol
Min.
Typ.
Max.
Unit
Continuous Drain-Source Diode Forward
Current
-
-
115
mA
IDM
Pulsed Drain-Source Diode Forward Current
-
-
800
mA
VSD
Source-Drain Forward Voltage
-
0.88
1.5
V
ID
Description
Conditions
VGS=0V, ID=115mA
Note: 5. Pulse Test: Pulse Width≤300μs, Duty Cycle≤2%
Rev. B/AH
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Page 3 of 6
Enhancement Mode MOSFET (N-Channel)
2N7002
Typical Characteristics Curves
Fig.2- Transfer Characteristics
Drain Current ID (A)
Drain Current ID (A)
Fig.1- Ohmic Region
Gate-Source Voltage VGS (V)
Fig.3- Temperature vs. Static Drain-Source OnResistance
Junction Temperature TJ (° C)
Gate-Source Threshold Voltage VGS(th) (V)
(Normalized)
Static Drain-Source On-Resistance RDS(ON) (Ω)
(Normalized)
Drain-Source Voltage VDS (V)
Fig.4- Temperature vs. Gate Threshold Voltage
Junction Temperature TJ (° C)
Rev. B/AH
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Page 4 of 6
Enhancement Mode MOSFET (N-Channel)
2N7002
Equivalent Circuit
Marking Information:
X: Date Code
Rev. B/AH
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Page 5 of 6
Enhancement Mode MOSFET (N-Channel)
2N7002
Dimensions in mm
How to contact us:
SOT-23
US HEADQUARTERS
28040 WEST HARRISON PARKWAY, VALENCIA, CA 91355-4162
Tel: (800) TAITRON (800) 824-8766 (661) 257-6060
Fax: (800) TAITFAX (800) 824-8329 (661) 257-6415
Email: [email protected]
Http://www.taitroncomponents.com
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BOULEVARD CENTRAL 5000 INTERIOR 5 PARQUE INDUSTRIAL ATITALAQUIA, HIDALGO C.P.
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Tel: +52-55-5560-1519
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Tel: +55-11-5574-7949
Fax: +55-11-5572-0052
TAITRON COMPONENTS INCORPORATED, SHANGHAI REPRESENTATIVE OFFICE
METROBANK PLAZA, 1160 WEST YAN’ AN ROAD, SUITE 1503, SHANGHAI, 200052, CHINA
Tel: +86-21-5424-9942
Fax: +86-21-5424-9931
Rev. B/AH
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