Enhancement Mode MOSFET (N-Channel) 2N7002A Enhancement Mode MOSFET (N-Channel) Features • • • • • High density cell design for low RDS(ON) Voltage controlled small signal switch Rugged and reliable High saturation current capability RoHS Compliance SOT-23 Mechanical Data SOT-23, Plastic Package Case: Terminals: Weight: Solderable per MIL-STD-202G, Method 208 0.008 gram Maximum Ratings (T Ambient=25ºC unless noted otherwise) Symbol Description 2N7002A Unit 60 V VDSS Drain-Source Voltage VGSS Gate-Source Voltage Continuous ± 20 V Drain Current Continuous 300 mA IDM Drain Current Pulsed (Note 1) 1200 mA PD Drain Power Dissipation (Note 2) 300 mW TJ Junction Temperature 150 °C -55 to +150 °C ID TSTG Storage Temperature Range TAITRON COMPONENTS INCORPORATED www.taitroncomponents.com Tel: (800)-TAITRON Fax: (800)-TAITFAX (800)-824-8766 (800)-824-8329 (661)-257-6060 (661)-257-6415 Conditions Rev. C/AH Page 1 of 8 Enhancement Mode MOSFET (N-Channel) 2N7002A Electrical Characteristics (T Ambient=25ºC unless noted otherwise) Off Characteristics Symbol Description Min. Typ. Max. Unit Conditions V(BR)DSS Drain-Source Breakdown Voltage 60 - - V VGS=0V, ID=10µA IDSS Zero Gate Voltage Drain Current - - 1 μA VDS=60V, VGS=0V IGSSF Gate-Body Leakage, Forward - - 100 IGSSR Gate-Body Leakage, Reverse - - -100 Min. Typ. Max. Unit Conditions 1.1 1.8 2.3 V VDS=VGS, ID=250μA - 1.2 1.8 - 1.5 2.1 - 0.6 0.9 - 0.075 0.105 On State Drain Current 500 - - mA VGS=10V, VDS≥2VDS(ON) Forward Transconductance 200 580 - mS VDS=10V, ID=500mA Unit Conditions pF VDS=25V, VGS=0V, f=1MHz nA VDS=0V, VGS=20V VDS=0V, VGS=-20V On Characteristics (Note 3) Symbol Description VGS(th) Gate Threshold Voltage RDS(ON) Drain-Source ON Resistance VDS(ON) Drain-Source ON Voltage ID(ON) gFS Ω V VGS=10V, ID=500mA VGS=5V, ID=50mA VGS=10V, ID=500mA VGS=5V, ID=50mA Dynamic Characteristics (T Ambient=25ºC unless noted otherwise) Symbol Description Min. Typ. Max. Ciss Input Capacitance - 47.1 - Crss Reverse Transfer Capacitance - 3.5 - Coss Output Capacitance - 8.8 - Rev. C/AH www.taitroncomponents.com Page 2 of 8 Enhancement Mode MOSFET (N-Channel) 2N7002A Switching Characteristics (T Ambient=25ºC unless noted otherwise) Symbol Description Min. Typ. Max. ton Turn-On Delay Time - 8.8 - toff Turn-Off Delay Time - 14.8 - Unit nS Conditions VDD=30V, RL=155Ω ID=190mA, VGS=10V Drain-Source Diode Ratings and Maximum Ratings Symbol VSD Description Min. Typ. Max. Unit Conditions - 0.78 1.15 V VGS=0V, IS=200mA Source-Drain Forward Voltage (Note 1) Note: (1) Pulse Width≤10µs, Duty Cycle≤1% (2) Package mounted on a glass epoxy PCB (100mm2 x 1mm) (3) Pulse Test: Pulse Width≤80μs, Duty Cycle≤1% Switching Time Test Circuit Rev. C/AH www.taitroncomponents.com Page 3 of 8 Enhancement Mode MOSFET (N-Channel) 2N7002A Drain Current ID (A) Fig.1- Output Characteristics Drain Source On-Resistance RDS(ON) (Ω) Typical Characteristics Curves Drain Current ID (A) Fig.4- Transfer Characteristics Fig.3- On-Resistance vs. Junction Temperature Drain Current ID (A) Drain Source On-Resistance RDS (Ω) Drain-Source Voltage VDS (V) Fig.2- On-Resistance vs. Drain Current Junction Temperature TJ (° C) Gate-Source Voltage VGS (V) Rev. C/AH www.taitroncomponents.com Page 4 of 8 Enhancement Mode MOSFET (N-Channel) 2N7002A Fig.6- Source-Drain Diode Forward Voltage Source Current IS (A) Gate-Source Threshold Voltage Vth (V) Fig.5- Threshold Characteristics Source-to-Drain Voltage VSD (V) Junction Temperature TJ (° C) Fig.7- Capacitance Capacitance (pF) Gate-Source Voltage VGS (V) Fig.8- Gate Charge Drain-Source Voltage VDS (V) Gate Charge Qg (nC) Rev. C/AH www.taitroncomponents.com Page 5 of 8 Enhancement Mode MOSFET (N-Channel) 2N7002A Fig.9- Safe Operating Area Drain Current ID (A) Drain Power Dissipation PD (mW) Fig.10- Power Dissipation vs. Ambient Temperature Drain-Source Voltage VDS (V) Ambient Temperature Ta (° C) Equivalent Circuit Rev. C/AH www.taitroncomponents.com Page 6 of 8 Enhancement Mode MOSFET (N-Channel) 2N7002A Marking Information: Dimensions in mm 1. Source 2. Gate 3. Drain SOT-23 Rev. C/AH www.taitroncomponents.com Page 7 of 8 Enhancement Mode MOSFET (N-Channel) 2N7002A How to contact us: US HEADQUARTERS 28040 WEST HARRISON PARKWAY, VALENCIA, CA 91355-4162 Tel: (800) TAITRON (800) 824-8766 (661) 257-6060 Fax: (800) TAITFAX (800) 824-8329 (661) 257-6415 Email: [email protected] Http://www.taitroncomponents.com TAITRON COMPONENTS MEXICO, S.A .DE C.V. BOULEVARD CENTRAL 5000 INTERIOR 5 PARQUE INDUSTRIAL ATITALAQUIA, HIDALGO C.P. 42970 MEXICO Tel: +52-55-5560-1519 Fax: +52-55-5560-2190 TAITRON COMPONENTS INCORPORATED REPRESENTAÇÕES DO BRASIL LTDA RUA DOMINGOS DE MORAIS, 2777, 2.ANDAR, SALA 24 SAÚDE - SÃO PAULO-SP 04035-001 BRAZIL Tel: +55-11-5574-7949 Fax: +55-11-5572-0052 TAITRON COMPONENTS INCORPORATED, SHANGHAI REPRESENTATIVE OFFICE METROBANK PLAZA, 1160 WEST YAN’ AN ROAD, SUITE 1503, SHANGHAI, 200052, CHINA Tel: +86-21-5424-9942 Fax: +86-21-5424-9931 Rev. C/AH www.taitroncomponents.com Page 8 of 8