2N7000K - Taitron Components, Inc.

N-Channel MOSFET ESD
Protected 2000V Transistor
2N7000K
N-Channel MOSFET ESD Protected 2000V Transistor
Features
•
•
•
•
•
•
ESD protected 2000V
High density cell design for low RDS(ON)
Voltage controlled small signal switch
Rugged and reliable
High saturation current capability
RoHS compliance
TO-92
Mechanical Data
Case:
TO-92, Plastic Package
Terminals:
Weight:
Solderable per MIL-STD-202G, Method 208
0.18 gram
Maximum Ratings (T Ambient=25ºC unless noted otherwise)
Symbol
Description
2N7000K
Unit
VDSS
Drain-Source Voltage
60
V
VGSS
Gate-Source Voltage
±20
V
Continuous
500
mA
Pulsed (Note 1)
2000
mA
ID
Drain Current
IDP
PD
Drain Power Dissipation
625
mW
TJ
Junction Temperature
150
°C
-55 to +150
°C
TSTG
Storage Temperature Range
Note 1: Pulse Width<10µs, Duty Cycle<1%
TAITRON COMPONENTS INCORPORATED www.taitroncomponents.com
Tel: (800)-TAITRON
Fax: (800)-TAITFAX
(800)-824-8766
(800)-824-8329
(661)-257-6060
(661)-257-6415
Rev. A/AH
Page 1 of 8
N-Channel MOSFET ESD Protected 2000V Transistor
2N7000K
Equivalent Circuit
Electrical Characteristics (T Ambient=25ºC unless noted otherwise)
Symbol
Description
Min.
Typ.
Max.
Unit
Conditions
BVDSS
Drain-Source Breakdown Voltage
60
-
-
V
VGS=0V, ID=10µA
IDSS
Zero Gate Voltage Drain Current
-
-
1
µA
VDS=60V, VGS=0V
IGSSF
Gate- Body Leakage, Forward
-
-
10
µA
VGS=20V, VDS=0V
IGSSR
Gate- Body Leakage, Reverse
-
-
-10
µA
VGS=-20V, VDS=0V
Min.
Typ.
Max.
Unit
Conditions
1.1
-
2.35
V
VDS=VGS, ID=250µA
-
1.2
1.8
Ω
VGS=10V, ID=500mA
-
1.5
2.1
Ω
VGS=5V, ID=50mA
-
0.6
0.9
V
VGS=10V, ID=500mA
-
0.075
0.105
V
VGS=5V, ID=50mA
On State Drain Current
500
-
-
mA
VGS=10V, VDS≥2VDS(ON)
gFS
Forward Transconductance
200
580
-
mS
VDS=10V, ID=500mA
VSD
Drain-Source Diode Forward Voltage
-
0.76
1.15
V
VGS=0V, IS=200mA(Note 1)
On Characteristics (Note 2)
Symbol
Vth
Description
Gate Threshold Voltage
RDS(ON)
Drain-Source ON Resistance
VDS(ON)
Drain-Source ON Voltage
ID(ON)
Rev. A/AH
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Page 2 of 8
N-Channel MOSFET ESD Protected 2000V Transistor
2N7000K
Note 2: Pulse Test: Pulse Width<80µs, Duty Cycle<1%
Dynamic Characteristics
Symbol
Description
Min.
Typ.
Max.
Unit
CISS
Input Capacitance
-
52.1
-
pF
CRSS
Reverse Transfer Capacitance
-
3.9
-
pF
COSS
Output Capacitance
-
7.7
-
pF
Turn-on Time
-
11.1
nS
Turn-off Time
-
22.5
nS
ton
toff
Switching Time
Conditions
VDS=25V, VGS=0V, f=1MHz
VDD=30V, RL=155Ω,
ID=190mA, VGS=10V
Switching Time Test Circuit
Rev. A/AH
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Page 3 of 8
N-Channel MOSFET ESD Protected 2000V Transistor
2N7000K
Typical Characteristics Curves
Fig.2- RDS(ON) - ID
Drain Current ID (A)
Drain-Source ON Resistance
RDS(ON) (Ω)
Fig.1- ID - VDS
Drain Current ID (A)
Drain-Source Voltage VDS (V)
Fig.4- ID - VGS
Drain Current ID (A)
Drain-Source ON Resistance
RDS(ON) (Ω)
Fig.3- RDS(ON) - TJ
Junction Temperature TJ (° C)
Gate-Source Voltage VGS (V)
Rev. A/AH
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Page 4 of 8
N-Channel MOSFET ESD Protected 2000V Transistor
2N7000K
Fig.6- Is - VSD
Reverse Drain Current IS (A)
Gate-Source Threshold Voltage Vth (V)
Fig.5- Vth - TJ
Body Diode Forward Voltage VSD (V)
Fig.7- C - VDS
Fig.8- VGS - Qg
Capacitance C (pF)
Gate-Source Voltage VGS (V)
Junction Temperature TJ (° C)
Drain Source Voltage VDS (V)
Gate Charge Qg (nC)
Rev. A/AH
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Page 5 of 8
N-Channel MOSFET ESD Protected 2000V Transistor
2N7000K
Fig.10- PD - TA
Drain Current ID (A)
Drain Power Dissipation PD (mW)
Fig.9- SOA
Drain Source Voltage VDS (V)
Ambient Temperature TA (° C)
Rev. A/AH
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Page 6 of 8
N-Channel MOSFET ESD Protected 2000V Transistor
2N7000K
Dimensions in mm
TO-92
Rev. A/AH
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Page 7 of 8
N-Channel MOSFET ESD Protected 2000V Transistor
2N7000K
How to contact us:
US HEADQUARTERS
28040 WEST HARRISON PARKWAY, VALENCIA, CA 91355-4162
Tel: (800) TAITRON (800) 824-8766 (661) 257-6060
Fax: (800) TAITFAX (800) 824-8329 (661) 257-6415
Email: [email protected]
Http://www.taitroncomponents.com
TAITRON COMPONENTS MEXICO, S.A .DE C.V.
BOULEVARD CENTRAL 5000 INTERIOR 5 PARQUE INDUSTRIAL ATITALAQUIA, HIDALGO C.P.
42970 MEXICO
Tel: +52-55-5560-1519
Fax: +52-55-5560-2190
TAITRON COMPONENTS INCORPORATED REPRESENTAÇÕES DO BRASIL LTDA
RUA DOMINGOS DE MORAIS, 2777, 2.ANDAR, SALA 24 SAÚDE - SÃO PAULO-SP 04035-001 BRAZIL
Tel: +55-11-5574-7949
Fax: +55-11-5572-0052
TAITRON COMPONENTS INCORPORATED, SHANGHAI REPRESENTATIVE OFFICE
METROBANK PLAZA, 1160 WEST YAN’ AN ROAD, SUITE 1503, SHANGHAI, 200052, CHINA
Tel: +86-21-5424-9942
Fax: +86-21-5424-9931
Rev. A/AH
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