SMD Power Transistor (PNP) MJD2955 SMD Power Transistor (PNP) Features • Designed for general purpose amplifier and low speed switching applications • RoHS compliance D-PACK (TO-252) Mechanical Data Case: Terminals: Weight: D-PACK(TO-252), Plastic Package Solderable per MIL-STD-202G, Method 208 0.3 grams Maximum Ratings (T Ambient=25ºC unless noted otherwise) Symbol Description Marking Code MJD2955 Unit MJD2955 VCEO Collector-Emitter Voltage 60 V VCBO Collector-Base Voltage 70 V VEBO Emitter-Base Voltage 5 V IC Collector Current Continuous 10 A IB Base Current 6 A Power Dissipation at TC=25°C 20 W Derate above 25°C 0.16 W/°C Power Dissipation at TA=25°C 1.75 W Derate above 25°C 0.014 W/°C -55 to +150 °C PD *PD TJ, TSTG Operating and Storage Junction Temperature Range TAITRON COMPONENTS INCORPORATED www.taitroncomponents.com Tel: (800)-TAITRON Fax: (800)-TAITFAX (800)-824-8766 (800)-824-8329 (661)-257-6060 (661)-257-6415 Rev. B/CZ Page 1 of 4 SMD Power Transistor (PNP) MJD2955 Thermal Characteristics Symbol Description MJD2955 Unit RthJC Thermal Resistance from Junction to Case 6.25 °C/W *RthJA Thermal Resistance from Junction to Ambient 71.4 °C/W Note: *These ratings are applicable when surface mounted on the minimum pad sizes recommended. Electrical Characteristics (T Ambient=25ºC unless noted otherwise) Off Characteristics Symbol Description Min. Max. Unit Conditions VCEO Collector Emitter Voltage 60 - V IC=1mA, IB=0 ICEO Collector Cut-off Current - 50 µA VCE=30V, IB=0 - 0.02 mA VCE=70V, VBE(OFF)=1.5V, ICEX Collector Cut-off Current - 2 mA - 0.02 mA VCB=70V, IE=0 - 2 mA VCB=70V, IE=0, TC=150°C - 0.5 mA VEB=5V, IC=0 Min. Max. Unit Conditions - 1.1 V IC=4A, IB=0.4A - 8 V IC=10A, IB=3.3A - 1.8 V VCE=4V, IC=4A 20 100 VCE=4V, IC=4A 5 - VCE=4V, IC=10A ICBO IEBO VCE=70V, VBE(OFF)=1.5V, TC=150°C Collector Cut-off Current Emitter Cut-off Current On Characteristics (**) Symbol VCE(sat) VBE(on) hFE Description Collector Emitter Saturation Voltage Base Emitter on Voltage D.C. Current Gain Note: ** Pulse Test: Pulse Width≤300µs, Duty Cycle≤2% Rev. B/CZ www.taitroncomponents.com Page 2 of 4 SMD Power Transistor (PNP) MJD2955 Dynamic Characteristics Symbol fT Description Current Gain Bandwidth Product Min. Typ. Unit 3 - MHz Conditions VCE=10V, IC=500mA, f=1MHz Dimensions in mm D-PACK (TO-252) Rev. B/CZ www.taitroncomponents.com Page 3 of 4 SMD Power Transistor (PNP) MJD2955 How to contact us: US HEADQUARTERS 28040 WEST HARRISON PARKWAY, VALENCIA, CA 91355-4162 Tel: (800) TAITRON (800) 824-8766 (661) 257-6060 Fax: (800) TAITFAX (800) 824-8329 (661) 257-6415 Email: [email protected] Http://www.taitroncomponents.com TAITRON COMPONENTS MEXICO, S.A .DE C.V. BOULEVARD CENTRAL 5000 INTERIOR 5 PARQUE INDUSTRIAL ATITALAQUIA, HIDALGO C.P. 42970 MEXICO Tel: +52-55-5560-1519 Fax: +52-55-5560-2190 TAITRON COMPONENTS INCORPORATED REPRESENTAÇÕES DO BRASIL LTDA RUA DOMINGOS DE MORAIS, 2777, 2.ANDAR, SALA 24 SAÚDE - SÃO PAULO-SP 04035-001 BRAZIL Tel: +55-11-5574-7949 Fax: +55-11-5572-0052 TAITRON COMPONENTS INCORPORATED, SHANGHAI REPRESENTATIVE OFFICE METROBANK PLAZA, 1160 WEST YAN’ AN ROAD, SUITE 1503, SHANGHAI, 200052, CHINA Tel: +86-21-5424-9942 Fax: +86-21-5424-9931 Rev. B/CZ www.taitroncomponents.com Page 4 of 4