Darlington Power Transistors (NPN) TIP120/121/122 Darlington Power Transistors (NPN) Features • Designed for general-purpose amplifier and low speed switching applications • RoHS Compliant TO-220 Mechanical Data Case: TO-220, Plastic Package Terminals: Weight: Solderable per MIL-STD-202, Method 208 0.08 ounces, 2.24 grams Maximum Ratings (T Ambient=25ºC unless noted otherwise) Symbol Description TIP120 TIP121 TIP122 Unit VCBO Collector-Base Voltage 60 80 100 V VCEO Collector-Emitter Voltage 60 80 100 V VEBO Emitter-Base Voltage 5.0 V Collector Current Continuous 5.0 A Collector Current Peak 8.0 A Base Current 120 mA Power Dissipation upto TC=25°C 65 W Power Dissipation Derate above TC=25°C 0.52 W/° C Power Dissipation upto TA=25°C 2.0 W Power Dissipation Derate above TA=25°C 16 mW/° C IC ICM IB PD RθJA Thermal Resistance from Junction to Ambient in Free Air 62.5 ° C /W RθJC Thermal Resistance from Junction to Case 1.92 ° C /W -65 to +150 °C TJ, TSTG Operating Junction and Storage Temperature Range TAITRON COMPONENTS INCORPORATED www.taitroncomponents.com Tel: (800)-TAITRON Fax: (800)-TAITFA (800)-824-8766 (800)-824-8329 (661)-257-6060 (661)-257-6415 Rev. A/AH 2008-06-13 Page 1 of 4 Darlington Power Transistors (NPN) TIP120/121/122 Electrical Characteristics (T Ambient=25ºC unless noted otherwise) Symbol *hFE *VCEO(sus) *VCE(sat) *VBE(on) ICEO ICBO IEBO Description Min. Max. Unit 1000 - VCE=3V, IC=0.5A 1000 - VCE=3V, IC=3A TIP120 60 - V TIP121 80 - V TIP122 100 - V - 2.0 V IC=3A, IB=12mA - 4.0 V IC=5A, IB=20mA - 2.5 V IC=3A, VCE=3V TIP120 - 0.5 TIP121 - 0.5 TIP122 - 0.5 VCE=50V, IB=0 TIP120 - 0.2 VCB=60V, IE=0 TIP121 - 0.2 TIP122 - 0.2 - 2 4.0 - - 200 D.C. Current Gain Collector-Emitter Sustaining Voltage IC=100mA, IB=0 Collector-Emitter Saturation Voltage Base-Emitter On Voltage Collector-Emitter Cut-off Current Collector-Base Cut-off Current Emitter-Base Cut-off Current hfe Small Signal Current Gain Cob Output Capacitance ton Turn on time VCE=30V, IB=0 mA mA Turn off time mA pF Typ. 0.4 Typ. 1.2 VCE=40V, IB=0 VCB=80V, IE=0 VCB=100V, IE=0 µS toff Conditions VEB=5V, IC=0 IC=3A, VCE=4V, f=1.0MHz, VCB=10V, IE=0, f=0.1MHz, IC=3A, RL=10Ω, IB1=IB2=12mA, VEB(off)=5V *Pulse Test: Pulse Width≤300µs, Duty Cycle≤2% Rev. A/AH 2008-06-13 www.taitroncomponents.com Page 2 of 4 Darlington Power Transistors (NPN) TIP120/121/122 Dimensions in inch (mm) TO-220 Rev. A/AH 2008-06-13 www.taitroncomponents.com Page 3 of 4 Darlington Power Transistors (NPN) TIP120/121/122 How to contact us: US HEADQUARTERS 28040 WEST HARRISON PARKWAY, VALENCIA, CA 91355-4162 Tel: (800) TAITRON (800) 824-8766 (661) 257-6060 Fax: (800) TAITFAX (800) 824-8329 (661) 257-6415 Email: [email protected] Http://www.taitroncomponents.com TAITRON COMPONENTS MEXICO, S.A .DE C.V. BOULEVARD CENTRAL 5000 INTERIOR 5 PARQUE INDUSTRIAL ATITALAQUIA, HIDALGO C.P. 42970 MEXICO Tel: +52-55-5560-1519 Fax: +52-55-5560-2190 TAITRON COMPONENTS INCORPORATED REPRESENTAÇÕES DO BRASIL LTDA RUA DOMINGOS DE MORAIS, 2777, 2.ANDAR, SALA 24 SAÚDE - SÃO PAULO-SP 04035-001 BRAZIL Tel: +55-11-5574-7949 Fax: +55-11-5572-0052 TAITRON COMPONENTS INCORPORATED, SHANGHAI REPRESENTATIVE OFFICE METROBANK PLAZA, 1160 WEST YAN’ AN ROAD, SUITE 1503, SHANGHAI, 200052, CHINA Tel: +86-21-5424-9942 Fax: +86-21-5424-9931 Rev. A/AH 2008-06-13 www.taitroncomponents.com Page 4 of 4