Darlington Power Transistors (NPN) TIP110/111/112 Darlington Power Transistors (NPN) Features • Designed for general-purpose amplifier and low speed switching applications • RoHS Compliant TO-220 Mechanical Data Case: TO-220, Plastic Package Terminals: Weight: Solderable per MIL-STD-202, Method 208 0.08 ounces, 2.24 grams Maximum Ratings (T Ambient=25ºC unless noted otherwise) Symbol Description TIP110 TIP111 TIP112 Unit VCBO Collector-Base Voltage 60 80 100 V VCEO Collector-Emitter Voltage 60 80 100 V VEBO Emitter-Base Voltage 5.0 V Collector Current Continuous 2.0 A Collector Current Peak 4.0 A Base Current 50 mA Power Dissipation upto TC=25°C 50 W Power Dissipation upto TA=25°C 2.0 W Power Dissipation Derate above TA=25°C 16 mW/° C IC ICM IB PD RθJA Thermal Resistance from Junction to Ambient in Free Air 62.5 ° C /W RθJC Thermal Resistance from Junction to Case 2.5 ° C /W -65 to +150 °C TJ, TSTG Operating Junction and Storage Temperature Range TAITRON COMPONENTS INCORPORATED www.taitroncomponents.com Tel: (800)-TAITRON Fax: (800)-TAITFA (800)-824-8766 (800)-824-8329 (661)-257-6060 (661)-257-6415 Rev. A/AH 2008-06-13 Page 1 of 4 Darlington Power Transistors (NPN) TIP110/111/112 Electrical Characteristics (T Ambient=25ºC unless noted otherwise) Symbol *hFE *VCEO(sus) Description Min. Max. Unit Conditions 1000 - VCE=4V, IC=1A 500 - VCE=4V, IC=2A TIP110 60 - V TIP111 80 - V TIP112 100 - V D.C. Current Gain Collector-Emitter Sustaining Voltage IC=30mA, IB=0 *VCE(sat) Collector-Emitter Saturation Voltage - 2.5 V IC=2A, IB=8mA *VBE(on) Base-Emitter On Voltage - 2.8 V IC=2A, VCE=4V ICEO Collector-Emitter Cut-off Current - 2.0 mA VCE=Half Rated VCEO ICBO Collector-Base Cut-off Current - 1.0 mA VCB=Half Rated VCBO IEBO Emitter-Base Cut-off Current - 2.0 mA VEB=5V, IC=0 *Pulse Test: Pulse Width≤300µs, Duty Cycle≤2% Rev. A/AH 2008-06-13 www.taitroncomponents.com Page 2 of 4 Darlington Power Transistors (NPN) TIP110/111/112 Dimensions in inch (mm) TO-220 Rev. A/AH 2008-06-13 www.taitroncomponents.com Page 3 of 4 Darlington Power Transistors (NPN) TIP110/111/112 How to contact us: US HEADQUARTERS 28040 WEST HARRISON PARKWAY, VALENCIA, CA 91355-4162 Tel: (800) TAITRON (800) 824-8766 (661) 257-6060 Fax: (800) TAITFAX (800) 824-8329 (661) 257-6415 Email: [email protected] Http://www.taitroncomponents.com TAITRON COMPONENTS MEXICO, S.A .DE C.V. BOULEVARD CENTRAL 5000 INTERIOR 5 PARQUE INDUSTRIAL ATITALAQUIA, HIDALGO C.P. 42970 MEXICO Tel: +52-55-5560-1519 Fax: +52-55-5560-2190 TAITRON COMPONENTS INCORPORATED REPRESENTAÇÕES DO BRASIL LTDA RUA DOMINGOS DE MORAIS, 2777, 2.ANDAR, SALA 24 SAÚDE - SÃO PAULO-SP 04035-001 BRAZIL Tel: +55-11-5574-7949 Fax: +55-11-5572-0052 TAITRON COMPONENTS INCORPORATED, SHANGHAI REPRESENTATIVE OFFICE METROBANK PLAZA, 1160 WEST YAN’ AN ROAD, SUITE 1503, SHANGHAI, 200052, CHINA Tel: +86-21-5424-9942 Fax: +86-21-5424-9931 Rev. A/AH 2008-06-13 www.taitroncomponents.com Page 4 of 4