WILLAS FM120-M+ THRU Z3PK2045 FM1200-M+ 20.0Amp Low VF Schottky Barrier Diode 45V - Z3PAK 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123+ PACKAGE OUTLINE DIMENSIONS Package outline FEATURES Features Halogen-free type • Batch process design, excellent power dissipation offers Lead free product, compliance to RoHS better reverse leakage current and thermal resistance. Lead less chip form, no lead damage Low profile surface mounted application in order to • Low power loss, High efficiency optimize board space. High current capability, low VF Low power loss, high efficiency. • Plastic package has Underwriters Laboratory Flammability • High current Classification 94V-0 capability, low forward voltage drop. TM High surge capability. • * Patented ZPAK Package Technology Case : Z3PAK Unit : mm SOD-123H Bottom View Pad Layout 3.2± 0.15 0.132 (3.36) MAX. 0.146(3.7) 0.130(3.3) 0.071(1.8) 0.056(1.4) 1.4± 0.15 4.0± 0.15 1.048± 0.15 0.055 (1.39) MIN. 1.0± 0.15 0.055 (1.40) MIN. • Ultra high-speed switching. APPLICATION • Silicon epitaxial planar chip, metal silicon junction. * Switching mode power supply applications parts meet environmental standards of • Lead-free * Portable equipment battery applications MIL-STD-19500 /228 * High•frequency rectification RoHS product for packing code suffix "G" * DC / DC Converter Halogen free product for packing code suffix "H" 0.280 (7.11) REF. 4.6± 0.15 for overvoltage protection. • Guardring Sensitivity Level 1 * Moisture 0.012(0.3) Typ. 0.191 (4.86) MIN. Top View 2.0 ± 0.15 6.5± 0.15 * * * * * * Pb Free Product 0.072 (1.84) MAX. * Designed as bypass diodes for solar panels 1.2± 0.15 Mechanical data : UL94-V0 rated flame retardant • Epoxy DATA MECHANICAL Case : Packed FRP substrate andSOD-123H epoxy underfilled : Molded plastic, • Casewith 0.040(1.0) BOTTOMSIDE 0.024(0.6) LEFT PIN RIGHT PIN HEAT SINK 0.031(0.8) Typ. , Terminals : Pure Tin plated (Lead-Free), • Terminals :Plated terminals, solderable per MIL-STD-750 solderable per MIL-STD-750, Method 2026. 0.031(0.8) Typ. MARKING Method 2026 ORDER• INFORMATION Polarity : Indicated by cathode band Dimensions in inches and (millimeters) RoHS product for packing code suffix "G" MAXIMUM RATINGS Halogen free product for packing code suffix "H" Z3PK 2045 Position : AnyPacking • Mounting Device Z3PK2045-TH • Weight : Approximated 0.011 gram Taping & Reel ;5000EA/Reel AND ELECTRICAL CHARACTERISTICS Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. o For capacitive load, derate current by =20% Absolute Maximum Ratings (Ta 25 C) RATINGS FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MHRating ITEM Marking Code Symbol VRMS VRRM 14 21 28 35 42 45 70 105 V 140 Volts Average forward current Maximum DC Blocking Voltage VDC IF(AV) 20 30 40 50 60 20 100 150 A 200 Volts IIOFSM Peak forward surge current Maximum Average Forward Rectified Current Operating junction temperature Range Peak Forward Surge Current 8.3 ms single half sine-wave Storage temperature Range superimposed on rated load (JEDEC method) CJ o Storage Temperature Range Electrical characteristics (Ta = 25 C) ITEM CHARACTERISTICS TJ -55 to +125 C o C Amps ℃/W PF -55 to +150 Conditions VF Min. IR 0.50 Repetitive peak reverse current NOTES: IRRM ℃ ℃ Typ. Max. Unit 0.9 0.85 0.5 - 0.58 0.64 0.92 V VR = Max. VRRM mAmp Ta = 25 oC - 0.02 0.10 o - - 50 - 60 - o C/W C/W C/W Ta = 125 C Junction to ambient (NOTE 2) Volts 10 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. Rth(JA) 0.70 IF = 20A Thermal resistance o - 65 to +175 Symbol @T A=125℃ 2- Thermal Resistance From Junction to Ambient Amps A SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT Maximum Average Reverse Current at @T A=25℃ Volts 40 120 TSTG Forward voltage (NOTE 1) Rated DC Blocking Voltage 80 -55 to +150 VF Maximum Forward Voltage at 1.0A DC 56 300 Tj IFSM RΘJA Typical Junction Capacitance (Note 1) 18 80 Z3PK2045 1.0 -55 to +150 30 8.3ms single half sine-wave TSTG Typical Thermal Resistance (Note 2) Operating Temperature Range 16 60 115Unit 120 150 200 VRRM Maximum Recurrent Peak Reverse Voltage 15 50 10 100 Maximum RMS Voltage Repetitive peak reverse voltage Conditions 13 14 30 40 12 20 mA Rth(JL) Junction to lead (NOTE 2) - 22 - o Rth(JC) Junction to case (NOTE 2) - 20 - o NOTES : (1) Pulse test width PW=300usec , 1% duty cycle. (2) Mounted on P.C.B. with 14 x 14mm copper pad areas. 2012-06 2012-1 WILLAS ELECTRONIC CORP. WILLAS ELECTRONIC CORP. WILLAS FM120-M+ THRU Z3PK2045 FM1200-M+ 20.0Amp Low VF Schottky Barrier Diode 45V - Z3PAK 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123+ PACKAGE Pb Free Product Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to FIG.1 - space. FORWARD CURRENT DERATING CURVE optimize board FIG.2 - MAXIMUM NON-REPETITIVE PEAK FORWARD SURGE CURRENT 0.146(3.7) • 0.130(3.3) 350 PEAK FORWARD SURGE CURRENT, AMPERES AVERAGE FORWARD RECTIFIED CURRENT, AMPERES • Low power loss, high efficiency. 25 current capability, low forward voltage drop. • High • High surge capability. 20 for overvoltage protection. • Guardring • Ultra high-speed switching. epitaxial planar chip, metal silicon junction. • Silicon 15 • Lead-free parts meet environmental standards of MIL-STD-19500 /228 10 product for packing code suffix "G" RoHS Halogen free product for packing code suffix "H" Mechanical data 5 • Epoxy : UL94-V0 rated flame retardant • Case0 : Molded plastic, SOD-123H 0 25 50 75 100 125 150 175 , • Terminals :Plated terminals, solderable per MIL-STD-750 0.012(0.3) Typ. 8.3ms SINGLE HALF SINE-WAVE 300 0.071(1.8) 0.056(1.4) 250 200 150 100 0.040(1.0) 0.024(0.6) 50 0 0.031(0.8) Typ. 1 0.031(0.8) Typ. 10 o 100 NUMBER OF CYCLES AT 60Hz CASE TEMPERATURE, C Method 2026 • Polarity : Indicated by cathode band • Mounting Position : Any • Weight : Approximated 0.011 gram Dimensions in inches and (millimeters) FIG.3 - TYPICAL INSTANTANEOUS FIG.4 - TYPICAL REVERSE CHARACTERISTICS MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS FORWARD CHARACTERISTICS o TJ = 150 C 10 TJ = 100℃ RATINGS TJ = 25℃ 10.0 VRRM Maximum Recurrent Peak Reverse Voltage 12 20 13 30 Maximum RMS Voltage VRMS 14 21 Maximum DC Blocking Voltage VDC 20 30 Maximum Average Forward Rectified Current IO IFSM 1.0 Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) Storage Temperature Range o 15 50 TJ = 125 C 16 60 28 35 TJ = 100 C 400.1 50 18 80 o 10 100 115 150 120 200 Volts 42 56 70 105 140 Volts 60 80 100 150 200 Volts 1.0 30 0.01 40 o TJ = 25 C 120 0.001 -55 to +125 TJ Operating Temperature Range 14 40 1 CJ Typical Junction Capacitance (Note 1) RΘJA 0.1 Typical Thermal Resistance (Note 2) INSTANTANEOUS REVERSE LEAKAGE CURRENT, MILLIAMPERES SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT Marking Code 100 TJ = 125℃ IINSTANTANEOUS FORWARD CURRENT, AMPERES 100 ambient temperature unless otherwise specified. Ratings at 25℃ Single phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% TJ = 150℃ Amp Amp ℃/W PF -55 to +150 ℃ - 65 to +175 TSTG 0.01 ℃ 0.0001 0 0.1 0.2 0.3 CHARACTERISTICS 0.4 0.5 0.6 0 20 40 60 80 100 SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT INSTANTANEOUS FORWARD VOLTAGE, VF VOLTS Maximum Forward Voltage at 1.0A DC Maximum Average Reverse Current at @T A=25℃ Rated DC Blocking Voltage 0.7 @T A=125℃ IR 0.50 PERCENT OF RATED PEAK REVERSE VOLTAGE,% 0.70 0.85 0.5 0.9 0.92 Volts 10 mAmp NOTES: 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient 2012-06 2012-1 WILLAS ELECTRONIC CORP. WILLAS ELECTRONIC CORP.