Z3PK2045

WILLAS
FM120-M+
THRU
Z3PK2045
FM1200-M+
20.0Amp Low VF Schottky Barrier Diode 45V - Z3PAK
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
SOD-123+ PACKAGE
OUTLINE
DIMENSIONS
Package
outline
FEATURES
Features
Halogen-free type
• Batch process design, excellent power dissipation offers
Lead free product, compliance to RoHS
better reverse leakage current and thermal resistance.
Lead less chip form, no lead damage
Low profile surface mounted application in order to
•
Low power loss, High efficiency
optimize board space.
High current capability, low VF
Low power loss, high efficiency.
•
Plastic package has Underwriters Laboratory Flammability
• High current
Classification
94V-0 capability, low forward voltage drop.
TM
High
surge
capability.
•
* Patented ZPAK Package
Technology
Case : Z3PAK
Unit : mm
SOD-123H
Bottom View
Pad Layout
3.2± 0.15
0.132 (3.36)
MAX.
0.146(3.7)
0.130(3.3)
0.071(1.8)
0.056(1.4)
1.4± 0.15
4.0± 0.15
1.048± 0.15
0.055 (1.39)
MIN.
1.0± 0.15
0.055 (1.40)
MIN.
• Ultra high-speed switching.
APPLICATION
• Silicon epitaxial planar chip, metal silicon junction.
* Switching
mode power
supply
applications
parts
meet
environmental standards of
• Lead-free
* Portable
equipment battery applications
MIL-STD-19500
/228
* High•frequency
rectification
RoHS product
for packing code suffix "G"
* DC / DC
Converter
Halogen
free product for packing code suffix "H"
0.280 (7.11)
REF.
4.6± 0.15
for overvoltage
protection.
• Guardring
Sensitivity
Level 1
* Moisture
0.012(0.3) Typ.
0.191 (4.86)
MIN.
Top View
2.0 ± 0.15
6.5± 0.15
*
*
*
*
*
*
Pb Free Product
0.072 (1.84)
MAX.
* Designed as bypass diodes for solar panels
1.2± 0.15
Mechanical data
: UL94-V0 rated flame retardant
• Epoxy DATA
MECHANICAL
Case : Packed
FRP substrate
andSOD-123H
epoxy underfilled
: Molded
plastic,
• Casewith
0.040(1.0)
BOTTOMSIDE
0.024(0.6)
LEFT PIN
RIGHT PIN
HEAT SINK
0.031(0.8) Typ.
,
Terminals : Pure Tin plated (Lead-Free),
• Terminals :Plated terminals, solderable per MIL-STD-750
solderable per MIL-STD-750, Method 2026.
0.031(0.8) Typ.
MARKING
Method 2026
ORDER• INFORMATION
Polarity : Indicated by cathode band
Dimensions in inches and (millimeters)
RoHS product for packing code suffix "G"
MAXIMUM
RATINGS
Halogen free product
for packing code
suffix "H"
Z3PK
2045
Position : AnyPacking
• Mounting
Device
Z3PK2045-TH
• Weight : Approximated
0.011
gram
Taping & Reel
;5000EA/Reel
AND ELECTRICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
o
For capacitive
load, derate
current
by =20%
Absolute
Maximum
Ratings
(Ta
25 C)
RATINGS
FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MHRating
ITEM
Marking Code
Symbol
VRMS
VRRM
14
21
28
35
42
45
70
105
V
140
Volts
Average forward current
Maximum
DC Blocking Voltage
VDC
IF(AV)
20
30
40
50
60
20
100
150
A
200
Volts
IIOFSM
Peak forward
surge current
Maximum
Average
Forward Rectified Current
Operating junction temperature Range
Peak Forward Surge Current 8.3 ms single half sine-wave
Storage
temperature
Range
superimposed
on rated
load (JEDEC method)
CJ
o
Storage Temperature
Range
Electrical
characteristics
(Ta = 25 C)
ITEM
CHARACTERISTICS
TJ
-55 to +125
C
o
C
Amps
℃/W
PF
-55 to +150
Conditions
VF
Min.
IR
0.50
Repetitive peak reverse current
NOTES:
IRRM
℃
℃
Typ.
Max.
Unit
0.9
0.85
0.5
-
0.58
0.64
0.92
V
VR = Max. VRRM
mAmp
Ta = 25 oC
-
0.02
0.10
o
-
-
50
-
60
-
o
C/W
C/W
C/W
Ta = 125 C
Junction to ambient (NOTE 2)
Volts
10
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
Rth(JA)
0.70
IF = 20A
Thermal resistance
o
- 65 to +175
Symbol
@T A=125℃
2- Thermal Resistance From Junction to Ambient
Amps
A
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT
Maximum Average Reverse Current at @T A=25℃
Volts
40
120
TSTG
Forward voltage (NOTE 1)
Rated DC Blocking Voltage
80
-55 to +150
VF
Maximum Forward Voltage at 1.0A DC
56
300
Tj
IFSM
RΘJA
Typical Junction Capacitance (Note 1)
18
80
Z3PK2045
1.0
-55 to +150
30
8.3ms single half sine-wave
TSTG
Typical Thermal Resistance (Note 2)
Operating Temperature Range
16
60
115Unit 120
150
200
VRRM
Maximum Recurrent Peak Reverse Voltage
15
50
10
100
Maximum RMS Voltage
Repetitive peak reverse voltage
Conditions
13
14
30
40
12
20
mA
Rth(JL)
Junction to lead (NOTE 2)
-
22
-
o
Rth(JC)
Junction to case (NOTE 2)
-
20
-
o
NOTES : (1) Pulse test width PW=300usec , 1% duty cycle.
(2) Mounted on P.C.B. with 14 x 14mm copper pad areas.
2012-06
2012-1
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC CORP.
WILLAS
FM120-M+
THRU
Z3PK2045
FM1200-M+
20.0Amp Low VF Schottky Barrier Diode 45V - Z3PAK
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
SOD-123+ PACKAGE
Pb Free Product
Package outline
Features
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
SOD-123H
• Low profile surface mounted application in order to
FIG.1 - space.
FORWARD CURRENT DERATING CURVE
optimize board
FIG.2 - MAXIMUM NON-REPETITIVE
PEAK FORWARD
SURGE CURRENT
0.146(3.7)
•
0.130(3.3)
350
PEAK FORWARD SURGE CURRENT,
AMPERES
AVERAGE FORWARD RECTIFIED
CURRENT, AMPERES
• Low power loss, high efficiency.
25
current capability, low forward voltage drop.
• High
• High surge capability.
20
for overvoltage protection.
• Guardring
• Ultra high-speed switching.
epitaxial planar chip, metal silicon junction.
• Silicon
15
• Lead-free parts meet environmental standards of
MIL-STD-19500 /228
10 product for packing code suffix "G"
RoHS
Halogen free product for packing code suffix "H"
Mechanical
data
5
• Epoxy : UL94-V0 rated flame retardant
• Case0 : Molded plastic, SOD-123H
0
25
50
75
100
125
150
175
,
• Terminals :Plated terminals, solderable per MIL-STD-750
0.012(0.3) Typ.
8.3ms SINGLE HALF SINE-WAVE
300
0.071(1.8)
0.056(1.4)
250
200
150
100
0.040(1.0)
0.024(0.6)
50
0
0.031(0.8) Typ.
1
0.031(0.8) Typ.
10
o
100
NUMBER OF CYCLES AT 60Hz
CASE TEMPERATURE, C
Method 2026
• Polarity : Indicated by cathode band
• Mounting Position : Any
• Weight : Approximated 0.011 gram
Dimensions in inches and (millimeters)
FIG.3 - TYPICAL INSTANTANEOUS
FIG.4 - TYPICAL REVERSE CHARACTERISTICS
MAXIMUM
RATINGS
AND ELECTRICAL CHARACTERISTICS
FORWARD
CHARACTERISTICS
o
TJ = 150 C
10
TJ = 100℃
RATINGS
TJ = 25℃
10.0
VRRM
Maximum Recurrent Peak Reverse Voltage
12
20
13
30
Maximum RMS Voltage
VRMS
14
21
Maximum DC Blocking Voltage
VDC
20
30
Maximum Average Forward Rectified Current
IO
IFSM
1.0
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
Storage Temperature Range
o
15
50
TJ = 125 C
16
60
28
35
TJ = 100 C
400.1
50
18
80
o
10
100
115
150
120
200
Volts
42
56
70
105
140
Volts
60
80
100
150
200
Volts
1.0
30
0.01
40 o
TJ = 25 C
120
0.001
-55 to +125
TJ
Operating Temperature Range
14
40 1
CJ
Typical Junction Capacitance (Note 1)
RΘJA
0.1
Typical Thermal Resistance (Note 2)
INSTANTANEOUS REVERSE LEAKAGE
CURRENT, MILLIAMPERES
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT
Marking Code
100
TJ = 125℃
IINSTANTANEOUS FORWARD CURRENT,
AMPERES
100 ambient temperature unless otherwise specified.
Ratings at 25℃
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate
current by 20%
TJ = 150℃
Amp
Amp
℃/W
PF
-55 to +150
℃
- 65 to +175
TSTG
0.01
℃
0.0001
0
0.1
0.2
0.3
CHARACTERISTICS
0.4
0.5
0.6
0
20
40
60
80
100
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT
INSTANTANEOUS FORWARD VOLTAGE,
VF
VOLTS
Maximum Forward Voltage at 1.0A DC
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
0.7
@T A=125℃
IR
0.50
PERCENT OF RATED PEAK REVERSE VOLTAGE,%
0.70
0.85
0.5
0.9
0.92
Volts
10
mAmp
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
2012-06
2012-1
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC CORP.