WILLAS MURS160-FN3

WILLAS
FM120-M+
THRU
MURS160-FN3
FM1200-M+
1.0A SURFACE MOUNT ULTRA FAST RECTIFIERS - 600V
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
mFN-323 PACKAGE
Pb Free Product
SOD-123+ PACKAGE
Package outline
Features
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
SOD-123H
• Low profile surface mounted application in order to
Package outline
optimize board space.
Features
• Low power loss, high efficiency.
0.146(3.7)
0.130(3.3)
• Low• profile
surface
mounted
application
order to
High current
capability,
low forward
voltageindrop.
mFN-323
0.071(1.8)
0.056(1.4)
0.044(1.10)
0.036(0.90)
0.017(0.43)
0.013(0.33)
Halogen
product
for packing
Polarity:
Colorfree
band
denotes
cathodecode
end suffix "H"
Mechanical data
0.026(0.66)
0.022(0.56)
product
for packing
code suffix
"G"
• RoHS
Halogen
free
product
for packing
code
suffix “H”
•
0.012(0.3) Typ.
0.056(1.40)
0.048(1.20)
•
•
•
optimize
space.
surge capability.
• High board
Guardring
for overvoltage
Package.protection.
mini• Flat
No-Lead
Ultra
high-speed
switching.
•
Glass passivated chip
junction.
Silicon
epitaxial
planar
chip, metal silicon junction.
•
Pb-Free package is available
• Lead-free parts meet environmental standards of
RoHSMIL-STD-19500
product for packing
/228 code suffix ”G”
0.040(1.0)
0.024(0.6)
• Epoxy : UL94-V0 rated flame retardant
• Case : Molded plastic, SOD-123H
,
Mechanical
data
• Terminals :Plated
terminals, solderable per MIL-STD-750
Method
2026
• Epoxy:UL94-V0
rated
flame retardant
• Polarity : Indicated by cathode band
• Case : mFN-323
• Mounting Position : Any
• Mounting
Position : Any
• Weight : Approximated 0.011 gram
0.031(0.8) Typ.
ry
0.031(0.8) Typ.
0.103(2.60)
0.095(2.40)
0.026(0.65)
0.014(0.35)
ina
Dimensions in inches and (millimeters)
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Pr
eli
m
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
Maximum ratings
Characteristics
(AT T FM160-MH
=25 C unless
otherwise
noted) FM1200-MH UNIT
FM130-MH FM140-MH FM150-MH
FM180-MH
FM1100-MH FM1150-MH
SYMBOL FM120-MH
RATINGS and Electrical
Marking CodePARAMETER
Maximum Recurrent Peak Reverse Voltage
Forward rectified current
Maximum RMS Voltage
Maximum
DCsurge
Blocking
Voltage
Forward
current
Maximum Average Forward Rectified Current
o
A
VRRM
12CONDITIONS
13
14
20
30
40
15
50
16 Symbol
18 MIN.10 TYP. 115
MAX. 120UNIT
60
80
100
150
200
Volts
VRMS
14
35
42
See Fig.2
21
28
8.3ms single
30 superimposed
40
50 on
VDC half20sine-wave
rate load (JEDEC methode)
60
IO
superimposed on rated load (JEDEC method)
Storage temperature
Typical Junction Capacitance (Note 1)
CJ
Operating Temperature Range
TJ
Storage Temperature Range
I FSM 80
T
RΘJA
56
1.0
IR
30 C J
Reverse current
V R = V RRM T J = 25 OC
Peak
Forward
Surge junction
Current 8.3capacitance
ms single half sine-wave
Typical
Diode
f=1MHzIFSM
and applied 4V DC reverse voltage
Typical Thermal Resistance (Note 2)
IO
40 STG
120
-55 to +125
1.0
A
70
105
140
100
150 30
200 A
5.0
25
-65
μA
Volts
Volts
Amps
pF Amps
+175
O
C ℃/W
PF
-55 to +150
℃
- 65 to +175
TSTG
℃
CHARACTERISTICS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT
VF
Maximum Forward Voltage at 1.0A DC
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
SYMBOLS
NOTES:
*1
V RRM
(V)
@T A=125℃
V RMS*2
(V)
*3
VR
(V)
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
MURS160-FN3
600
420
2- Thermal Resistance From Junction to Ambient
600
0.50
2012-0
0.85
0.9
0.92
Volts
*1 Maximun
Repetitive peak reverse voltage
0.5
IR
*4
VF
(V)
10
*2 Maximun
RMS voltage
mAmps
*5
t rr
(ns)
Operating
temperature
T J, ( OC)
*3 Maximun DC Blocking Voltage
50
-55 to +150
*4 Maximum forward voltage@I F =1.0A,T J =25°C
1.25
Note 1. Reverse recovery time test condition, I F =0.5A, I R =1.0A, I RR =0.25A
2012-06
0.70
*5 Maximum Reverse recovery time, note 1
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC CORP.
WILLAS
FM120-M+
THRU
MURS160-FN3
FM1200-M+
1.0A SURFACE MOUNT ULTRA FAST RECTIFIERS - 600V
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
mFN-323 PACKAGE
Pb Free Product
SOD-123+ PACKAGE
Package outline
Features
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
Rating and characteristic curves
SOD-123H
• Low profile surface mounted application in order to
optimize board space.
0.146(3.7)
FIG.2-TYPICAL
FORWARD CURRENT
0.130(3.3)
0.012(0.3) Typ.
DERATING CURVE
AVERAGE FORWARD CURRENT,(A)
•
INSTANTANEOUS FORWARD CURRENT,(A)
• Low power loss, high efficiency.
• High current capability, low forward voltage drop.
• High surge capability.
• Guardring for overvoltage protection.
FIG.1-TYPICAL FORWARD
• Ultra high-speed switching.
CHARACTERISTICS
planar chip, metal silicon junction.
• Silicon epitaxial
10
• Lead-free parts meet environmental standards of
MIL-STD-19500 /228
1
RoHS product
for packing code suffix "G"
Halogen free product for packing code suffix "H"
0.1
Mechanical
data
• Epoxy : UL94-V0 rated flame retardant
0.01
• Case : Molded plastic, SOD-123H
,
0.001 :Plated terminals, solderable per MIL-STD-750
• Terminals
1.2
1.4
1.6
• Polarity : Indicated by FORWARD
cathode band
VOLTAGE,(V)
• Mounting Position : Any
• Weight : Approximated 0.011 gram
0.8
0.6
0.4
0.2
0.040(1.0)
0.024(0.6)
0
0
25
50
75
100
125
150
0.031(0.8) Typ.
175
AMBIENT TEMPERATURE (°C)
ry
1
0.071(1.8)
0.056(1.4)
1.0
0.031(0.8) Typ.
1.8
Dimensions in inches and (millimeters)
ina
FIG.4-MAXIMUM NON-REPETITIVE FORWARD
SURGE CURRENT
50
PEAK FORWAARD SURGE CURRENT,(A)
0.2
0.4 2026
0.6
0.8
Method
1.2
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Marking Code
30
8.3ms Single Half
TJ=25 C
Sine Wave
RECOVERY
TIME CHARACTERISTICS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT
RATINGS
20
50W
NONINDUCTIVE
Maximum Recurrent Peak Reverse Voltage
VRRM
12
20
Maximum RMS Voltage
VRMS
14
(+)
10W
NONINDUCTIVE
(approx.)
Peak Forward Surge Current
1W
NON8.3
ms single
INDUCTIVE
OSCILLISCOPE
(NOTE 1)
half sine-wave
superimposed on rated load (JEDEC method)
IFSM
1. Rise Time=
7ns max.,
Typical ThermalNOTES:
Resistance
(Note
2) Input Impedance= 1 megohm.22pF.
RΘJA
2. Rise Time=(Note
10ns max.,
Typical Junction Capacitance
1) Source Impedance= 50 ohms.CJ
TJ
Operating Temperature Range
Storage Temperature Range
JEDEC method
13
30
14
40
15
50
16
60
18
80
10
100
115
150
120
200
Volts
21
28
35
42
56
70
105
140
Volts
40
50
60
80
100
150
200
Volts
10
30
GENERATOR
IO (NOTE 2)
Maximum Average
( ) Forward Rectified Current
( )
VDC PULSE 20
Maximum DC Blocking
Voltage
D.U.T.
25Vdc
0
1
5
(+)
1.0 10
50
Amps
100
NUMBER
OF CYCLES AT 60Hz
30
Amps
40
120
FIG.5-TYPICAL JUNCTION CAPACITANCE
-55 to +150
℃/W
-55 to +125
PF
℃
- 65 to +175
70
TSTG
℃
Maximum Forward Voltage at 1.0A DC
Maximum Average Reverse Current at
Rated DC Blocking Voltage
0
|
|
|
|
@T||A=25℃
|
@T|A=125℃
60
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT
VF
IR
-0.25A
JUNCTION CAPACITANCE,(pF)
trr
CHARACTERISTICS
+0.5A
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
40
Pr
eli
m
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
FIG.3- TEST CIRCUIT DIAGRAM AND REVERSE
For capacitive load, derate current by 20%
2- Thermal Resistance From Junction to Ambient
-1.0A
0.50
50
0.70
0.9
0.85
0.92
0.5
40
Volts
mAmps
10
30
20
10
1cm
SET TIME BASE FOR
50 / 10ns / cm
0
.01
.05
.1
.5
1
5
10
50
100
REVERSE VOLTAGE,(V)
2012-06
2012-0
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC CORP.
1.0A SURFACE MOUNT ULTRA FAST RECTIFIERS - 600V
mFN-323 PACKAGE
MURS160-FN3
Pinning information
Pin
cathode
anode
1
Symbol
2
1
2
ry
Pin1
Pin2
Simplified outline
Type number
ina
Marking
Marking code
M6
Pr
eli
m
MURS160-FN3
Suggested solder pad layout
(1.90)
0.075
(0.70)
0.028
(0.50)
0.020
(0.90)
0.036
(0.50)
0.020
Dimensions in inches and (millimeters)
2012-0
WILLAS ELECTRONIC CORP.