UNISONIC TECHNOLOGIES CO., LTD UTD413 Power MOSFET P-CHANNEL ENHANCEMENT MODE DESCRIPTION The UTD413 can provide excellent RDS(ON) and low gate charge by using UTC’s advanced trench technology. The UTD413 is well suited for high current load applications with the excellent thermal resistance of the TO-252 package. Standard Product UTD413 is Pb-free. FEATURES * RDS(ON) < 45 mΩ @ VGS=-10V, ID=-12A * RDS(ON) < 69 mΩ @ VGS=-4.5V, ID=-8 A * Low capacitance * Low gate charge * Fast switching capability * Avalanche energy specified SYMBOL 2.Drain 1.Gate 3.Source ORDERING INFORMATION Ordering Number Lead Free Halogen Free UTD413G-AA3-R UTD413L-TN3-R UTD413G-TN3-R UTD413L-TND-R UTD413G-TND-R Note: Pin Assignment: G: Gate D: Drain S: Source Pin Assignment 1 2 3 G D S G D S G D S Package SOT-223 TO-252 TO-252D Packing Tape Reel Tape Reel Tape Reel UTD413G-AA3-R (1)Packing Type (1) R: Tape Reel (2)Package Type (2) AA3: SOT-223, TN3: TO-252, TND: TO-252D (3)Green Package (3) G: Halogen Free and Lead Free, L: Lead Free MARKING SOT-223 www.unisonic.com.tw Copyright © 2014 Unisonic Technologies Co., Ltd TO-252 / TO-252D 1 of 4 QW-R502-246.F UTD413 Power MOSFET ABSOLUTE MAXIMUM RATINGS (TA =25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS -40 V Gate-Source Voltage VGSS ±20 V Continuous Drain Current ID -12 A Pulsed Drain Current IDM -30 A Avalanche Current IAR -12 A Repetitive avalanche energy L=0.1mH EAR 30 mJ SOT-223 0.78 W Power Dissipation PD TO-252/TO-252D 2.5 W Junction Temperature TJ +175 °C Storage Temperature TSTG -55 ~ +175 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Pulse width limited by TJ(MAX) THERMAL DATA PARAMETER SYMBOL RATINGS UNIT SOT-223 160 °C/W Junction to Ambient θJA TO-252/TO-252D 50 °C/W SOT-223 12 °C/W Junction to Case θJC TO-252/TO-252D 3 °C/W Note: When surface mounted to an FR4 board using minimum recommended pad size. (Cu. Area 0.412 sq in), Steady State. ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise specified) PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage Drain-Source Leakage Current Gate-Source Leakage Current ON CHARACTERISTICS Gate Threshold Voltage On State Drain Current Static Drain-Source On-Resistance DYNAMIC PARAMETERS Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING PARAMETERS Total Gate Charge SYMBOL VGS=0V, ID=-10mA VDS=-32V, VGS=0V VDS=0V, VGS=±20V -40 VGS(TH) ID(ON) VDS=VGS, ID=-250µA VDS=-5V, VGS=-10V VGS=-10V, ID=-12A VGS=-4.5V, ID=-8 A -1 -30 RDS(ON) QG VDS=-20V, VGS =0V, f=1MHz VDS=-20V, VGS=-10V, ID =-12A Gate Source Charge QGS Gate Drain Charge QGD Turn-ON Delay Time tD(ON) Turn-ON Rise Time tR VGS=-10V, VDS=-20V, RL=1.7Ω, RG=3Ω Turn-OFF Delay Time tD(OFF) Turn-OFF Fall-Time tF SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Diode Forward Voltage VSD IS=-12A, VGS=0V Maximum Body-Diode Continuous Current IS Body Diode Reverse Recovery Time tRR IF=-12A, dI/dt=100A/μs Body Diode Reverse Recovery Charge QRR IF=-12A, dI/dt=100A/μs UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw MIN BVDSS IDSS IGSS CISS COSS CRSS 10V 4.5V TEST CONDITIONS TYP MAX UNIT -1 ±100 -1.9 -3 36 51 45 69 657 143 63 23.2 18.2 V A mΩ pF pF pF 14.1 7 2.2 4.1 8 12.2 24 12.5 -0.75 V µA nA nC nC nC ns ns ns ns -1.2 -12 V A ns nC 2 of 4 QW-R502-246.F UTD413 Power MOSFET TYPICAL CHARACTERISTICS Drain Current vs. Drain-Source Breakdown Voltage Drain Current vs. Gate Threshold Voltage 450 300 400 250 350 300 200 250 150 200 100 150 100 50 0 50 0 14 0 0.5 1.0 2.0 1.5 2.5 0 10 20 30 40 50 Gate Threshold Voltage, -VTH (V) Drain-Source Breakdown Voltage, -BVDSS(V) Drain-Source On-State Resistance Characteristics Drain-Source On-State Resistance Characteristics 1.4 ID=-12A VGS=-10V 12 1.2 10 ID=-1A VGS=-10V 1.0 8 0.8 ID=-8A VGS=-4.5V 6 ID=-1A VGS=-4.5V 0.6 4 0.4 2 0.2 0 0 0 200 400 600 Drain to Source Voltage, -VDS (mV) UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 0 50 Drain to Source Voltage, -VDS (mV) 3 of 4 QW-R502-246.F UTD413 Power MOSFET UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 4 QW-R502-246.F