UNISONIC TECHNOLOGIES CO., LTD Preliminary UTT100N06 Power MOSFET N-CHANNEL ENHANCEMENT MODE POWER MOSFET DESCRIPTION The UTC UTT100N06 is an N-channel enhancement mode Power FET using UTC’s advanced technology to provide customers with a minimum on-state resistance and superior switching performance. It also can withstand high energy pulse in the avalanche and commutation mode. FEATURES * Fast switching speed * 100A, 60V, RDS(ON)= 7mΩ @ VGS=10V * Work below 175°C * 100% avalanche tested * Improved dv/dt capability SYMBOL ORDERING INFORMATION Ordering Number Package Lead Free Halogen Free UTT100N06L-TA3-T UTT100N06G-TA3-T TO-220 Note: Pin Assignment: G: Gate D: Drain S: Source UTT100N06L-TA3-T 1 G Pin Assignment 2 3 D S (1)Packing Type (1) T: Tube (2)Package Type (2) TA3: TO-220 (3)Lead Free (3) G: Halogen Free, L: Lead Free www.unisonic.com.tw Copyright © 2011 Unisonic Technologies Co., Ltd Packing Tube 1 of 3 QW-R502-509.a UTT100N06 Preliminary Power MOSFET ABSOLUTE MAXIMUM RATINGS (TJ=25°C, unless otherwise specified) PARAMETER Drain-Source Voltage Gate-Source Voltage SYMBOL RATINGS UNIT VDSS 60 V VGSS ±20 V Continuous ID 100 A Drain Current Pulsed IDM 400 A Avalanche Energy Single Pulsed EAS 875 mJ Peak Diode Recovery dv/dt dv/dt 6 V/ns Power Dissipation PD 100 W Junction Temperature TJ +150 °C Storage Temperature TSTG -55~+150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. THERMAL CHARACTERISTICS PARAMETER Junction to Ambient Junction to Case UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw SYMBOL θJA θJC RATINGS 62.5 1.5 UNIT °C/W °C/W 2 of 3 QW-R502-509.a UTT100N06 Preliminary Power MOSFET ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise specified) PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage Drain-Source Leakage Current Forward Gate- Source Leakage Current Reverse ON CHARACTERISTICS Gate Threshold Voltage Static Drain-Source On-State Resistance SYMBOL BVDSS IDSS IGSS VGS(TH) RDS(ON) TEST CONDITIONS MIN ID=250µA, VGS=0V VDS=60V, VGS=0V VGS=+20V, VDS=0V VGS=-20V, VDS=0V 60 VDS=VGS, ID=250µA VGS=10V, ID=50A VGS=4.5V, ID=40A 1 DYNAMIC PARAMETERS Input Capacitance CISS VGS=0V, VDS=25V, f=1.0MHz Output Capacitance COSS Reverse Transfer Capacitance CRSS SWITCHING PARAMETERS Total Gate Charge QG VGS=10V, VDS=30V, ID=100A Gate to Source Charge QGS Gate to Drain Charge QGD Turn-ON Delay Time tD(ON) VDD=30V, VGS=10V, ID≒100A, Rise Time tR RG=0.4Ω Turn-OFF Delay Time tD(OFF) Fall-Time tF Transconductance gFS VDS=15V, ID=30A SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Maximum Body-Diode Continuous Current IS Maximum Body-Diode Pulsed Current ISM Drain-Source Diode Forward Voltage VSD IS=100A, VGS=0V Resistance of Gate RG TYP MAX UNIT V 10 µA +100 nA -100 nA 7 10 3 V mΩ mΩ 12900 1060 700 pF pF pF 500 50 33 90 130 768 280 nC nC nC ns ns ns ns S 200 420 30 100 400 0.65 1.0 1.3 1.5 2 A A V Ω UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 3 QW-R502-509.a