UNISONIC TECHNOLOGIES CO., LTD UM6K31N Preliminary Power MOSFET SILICON N-CHANNEL MOSFET TRANSISTOR 6 DESCRIPTION 5 4 The UTC UM6K31N is a silicon N-channel MOS Field Effect Transistor. It can be used in switching applications. 3 SOT-363 SYMBOL ORDERING INFORMATION Ordering Number Package Lead Free Halogen Free UM6K31NL-AL6-R UM6K31NG-AL6-R SOT-363 Note: Pin Assignment: G: Gate D: Drain S: Source 1 2 1 S1 Pin Assignment 2 3 4 5 G1 D2 S2 G2 6 D1 Packing Tape Reel MARKING www.unisonic.com.tw Copyright © 2010 Unisonic Technologies Co., Ltd 1 of 5 QW-R502-503.a UM6K31N Preliminary Power MOSFET ABSOLUTE MAXIMUM RATINGS (Ta=25°C, it is the same rating for the Tr1 AND Tr2) PARAMETER SYMBOL RATINGS Drain-Source Voltage VDSS 60 Gate-Source Voltage VGSS ±20 Continuous ID ±250 Drain Current Continuous ±1 Pulsed (Note1) IDP Continuous IS 125 Source Current Continuous (Body Diode) Pulsed (Note1) ISP 1 Power Dissipation PD 150 Channel Temperature TCH 150 Strage Temperature TSTG -55~150 Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. THERMAL RESISTANCE PARAMETER SYMBOL θJA Channel to Ambient UNIT V V mA A mA A mW °C °C RATINGS 833 UNIT °C/W ELECTRICAL CHARACTERISTICS (Ta =25°C, it is the same rating for the Tr1 And Tr2) PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage Drain-Source Leakage Current Gate- Source Leakage Current ON CHARACTERISTICS Gate Threshold Voltage SYMBOL TEST CONDITIONS MIN TYP MAX UNIT BVDSS IDSS IGSS ID=1mA, VGS=0V VDS=60V, VGS=0V VGS = ±20 V, VDS=0 V 60 VGS(TH) VDS=10V, ID=1mA VGS=10V, ID=250mA VGS=4.5V, ID=250mA VGS=4.0V, ID=250mA VGS=2.5V, ID=10mA 1.0 Static Drain-Source On-State Resistance RDS(ON) (Note1) DYNAMIC PARAMETERS Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING PARAMETERS CISS COSS CRSS 1 ±10 1.7 2.1 2.3 3.0 VGS=0V, VDS=25V, f=1MHz tD(ON) (Note1) tR ID=100mA, VDD 30V, VGS=10V, Rise Time (Note1) RL 300Ω, RG=10Ω tD(OFF) See Fig 1-1.1-2 Turn-OFF Delay Time (Note1) tF Fall-Time (Note1) SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Drain-Source Diode Forward Voltage VSD IS=250mA, VGS=0V (Note1) |Yfs| VDS=10V, ID=250mA Forward Transfer Admittance (Note1) Note1: PW≤10μs DUTY CYCLE≤1% Turn-ON Delay Time UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2.5 2.4 3.0 3.2 12.0 V Ω 15 4.5 2.0 pF pF pF 3.5 ns 5 ns 18 ns 28 ns 1.2 0.25 V µA µA V S 2 of 3 QW-R502-503.a UM6K31N Preliminary Power MOSFET TEST CIRCUIT UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 3 QW-R502-503.a