UNISONIC TECHNOLOGIES CO., LTD 02N50 Preliminary Power MOSFET 0.2A, 500V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 02N50 is an N-channel MOSFET, it uses UTC’s advanced technology to provide the customers with high breakdown voltage FEATURES * RDS(on)=75Ω @VGS=10V, ID=0.15A * High breakdown voltage ORDERING INFORMATION Ordering Number Lead Free Halogen Free 02N50L-TM3-T 02N50G-TM3-T Note: Pin Assignment: G: Gate D: Drain S: Source www.unisonic.com.tw Copyright © 2010 Unisonic Technologies Co., Ltd Package TO-251 Pin Assignment 1 2 3 G D S Packing Tube 1 of 3 QW-R502-975.a 02N50 Preliminary Power MOSFET ABSOLUTE MAXIMUM RATINGS PARAMETER Drain-Source Voltage Gate-Source Voltage SYMBOL RATINGS UNIT VDSS 500 V VGSS ±30 V 0.2 A Continuous ID Drain Current Pulsed IDM 1 A Avalanche Current (Note 1) IAR 0.2 A Power Dissipation PD 40 W Junction Temperature TJ 150 °C Storage Temperature Range TSTG -55 ~+150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. ELECTRICAL CHARACTERISTICS PARAMETER SYMBOL TEST CONDITIONS OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS ID=250µA, VGS=0V Drain-Source Leakage Current IDSS VDS=500V, VGS=0V, TA=25°C Forward VGS=+30V, VDS=0V Gate-Source Leakage Current IGSS Reverse VGS=-30V, VDS=0V ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS=VGS, ID=250µA Static Drain-Source On-State Resistance RDS(ON) VGS=10V, ID=0.15A, TA=25°C DYNAMIC PARAMETERS Input Capacitance CISS VGS=0V, VDS=25V, f=1.0MHz Output Capacitance COSS Reverse Transfer Capacitance CRSS SWITCHING PARAMETERS Total Gate Charge QG VGS=10V, ID=0.2A, VPS=400V Gate to Source Charge QGS Gate to Drain Charge QGD Turn-ON Delay Time tD(ON) Rise Time tR VDD=250V, ID=0.2A, RG=25Ω Turn-OFF Delay Time tD(OFF) Fall-Time tF SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Maximum Body-Diode Continuous Current IS Maximum Body-Diode Pulsed Current ISM Drain-Source Diode Forward Voltage VSD IS=0.2A, VGS=0V UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw MIN TYP MAX UNIT 500 2.5 62 10 +100 -100 V µA nA nA 4.5 75 V Ω 200 20 8 pF pF pF 3.0 4.5 0.45 0.7 0.4 0.75 9 4 28 45 nC nC nC ns ns ns ns 0.2 1 1 A A V 2 of 3 QW-R502-975.a 02N50 Preliminary Power MOSFET UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 3 QW-R502-975.a