UNISONIC TECHNOLOGIES CO., LTD 30N20 Preliminary Power MOSFET 30A, 200V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 30N20 is an N-channel mode Power FET, it uses UTC’s advanced technology. This technology allows a minimum on-state resistance, superior switching performance. It also can withstand high energy pulse in the avalanche and commutation mode. FEATURES * RDS(ON) < 75mΩ @ VGS=10V, ID=15A * Low Gate Charge (Typical 60nC) * High Switching Speed SYMBOL ORDERING INFORMATION Ordering Number Lead Free Halogen Free 30N20L-TA3-T 30N20G-TF2-T 30N20L-TF2-T 30N20G-TF2-T Note: Pin Assignment: G: Gate D: Drain S: Source Package TO-220 TO-220F2 Pin Assignment 1 2 3 G D S G D S Packing Tube Tube MARKING www.unisonic.com.tw Copyright © 2015 Unisonic Technologies Co., Ltd 1 of 3 QW-R502-823.b 30N20 Preliminary Power MOSFET ABSOLUTE MAXIMUM RATINGS PARAMETER Drain-Source Voltage Gate-Source Voltage RATINGS UNIT 200 V ±30 V Continuous 30 A Drain Current Pulsed 124 A Avalanche Current 30 A 640 mJ Single Pulsed Avalanche Energy Repetitive 18 mJ TO-220 190 W Power Dissipation PD TO-220F2 42 W Junction Temperature TJ +150 °C Storage Temperature Range TSTG -55 ~ +150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. SYMBOL VDSS VGSS ID IDM IAR EAS EAR ELECTRICAL CHARACTERISTICS PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage Drain-Source Leakage Current Gate-Source Leakage Current SYMBOL BVDSS IDSS Forward Reverse IGSS TEST CONDITIONS ID=250µA, VGS=0V VDS=200V VGS=+30V, VDS=0V VGS=-30V, VDS=0V ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) ID=250µA Static Drain-Source On-State Resistance RDS(ON) VGS=10V, ID=15A DYNAMIC PARAMETERS Input Capacitance CISS VGS=0V, VDS=25V, f=1MHz Output Capacitance COSS Reverse Transfer Capacitance CRSS SWITCHING PARAMETERS Total Gate Charge QG VDD=50V, VGS=10V , ID=1.3A Gate to Source Charge QGS Gate to Drain Charge QGD Turn-ON Delay Time tD(ON) Rise Time tR VDD=30V, ID=0.5A, RG=25Ω, VGS=0~10V Turn-OFF Delay Time tD(OFF) Fall-Time tF SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Maximum Body-Diode Continuous Current IS Maximum Body-Diode Pulsed Current ISM Drain-Source Diode Forward Voltage VSD IS=30A, VGS=0V UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw MIN TYP MAX UNIT 200 3 1 +100 -100 V μA nA nA 5 75 V mΩ 2400 3100 430 560 55 70 pF pF pF 60 17 27 40 280 125 115 78 nC nC nC ns ns ns ns 30 124 1.5 A A V 2 of 3 QW-R502-823.b 30N20 Preliminary Power MOSFET UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 3 QW-R502-823.b