UNISONIC TECHNOLOGIES CO., LTD Preliminary UT6354-H Power MOSFET -4A, -60V P-CHANNEL SILICON MOSFET DESCRIPTION 6 The UTC UT6354-H is a P-Channel Silicon MOSFET, it uses UTC’s advanced technology to provide the customers with a minimum on state resistance and low gate charge, etc. The UTC UT6354-H is suitable for general-purpose switching device applications. 5 4 1 2 3 SOT-26 FEATURES * RDS(ON) < 100mΩ @ VGS=-10V, ID=-2A * Low gate charge SYMBOL ORDERING INFORMATION Ordering Number Note: UT6354G-AG6-R Pin Assignment: G: Gate D: Drain Package SOT-26 1 D Pin Assignment 2 3 4 5 D G S D 6 D Packing Tape Reel S: Source MARKING www.unisonic.com.tw Copyright © 2015 Unisonic Technologies Co., Ltd 1 of 4 QW-R210-011.a UT6354-H Preliminary Power MOSFET ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise noted) PARAMETER SYMBOL VDSS VGSS ID IDP Drain-Source Voltage Gate-Source Voltage Drain Current (DC) Drain Current (Pulse) RATINGS -60 ±20 -4 -16 UNIT V V A A PW≤10μs, Duty Cycle≤1% When Mounted on Ceramic PD Allowable Power Dissipation 1.6 W Substrate (1500mm2×0.8mm) Junction Temperature TJ 150 °C Storage Temperature Range TSTG -55~+150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted) PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-to-Source Leakage Current ON CHARACTERISTICS Cutoff Voltage Static Drain-Source On-State Resistance SYMBOL TEST CONDITIONS MIN BVDSS IDSS IGSS ID=-1mA, VGS=0V VDS=-60V, VGS=0V VGS=±16V,VDS=0V -60 VGS(OFF) VDS=-10V, ID=-1mA VGS=-10V, ID=-2A VGS=-4.5V, ID=-1A VGS=-4V, ID=-1A VDS=-10V, ID=-2A -1.2 RDS(ON) Forward Transfer Admittance | YFS | DYNAMIC PARAMETERS Input Capacitance CISS VDS=-20V, f=1.0MHz Output Capacitance COSS Reverse Transfer Capacitance CRSS SWITCHING PARAMETERS Total Gate Charge QG VDS=-30V, VGS=-10V, ID=-1A Gate to Source Charge QGS IG=-100uA Gate to Drain Charge QGD Turn-ON Delay Time tD(ON) Rise Time tR VDS=-30V, VGS=-10V, ID=-0.5A RG=25Ω Turn-OFF Delay Time tD(OFF) Fall-Time tF SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Diode Forward Voltage VSD IS=-4A,VGS=0V UNISONIC TECHNOLOGIES CO., LTD TYP MAX UNIT -1 ±10 77 96 103 4.8 -2.6 100 135 145 V µA µA V mΩ mΩ mΩ S 600 60 50 pF pF pF 52 3.0 3.0 40 38 250 100 nC nC nC ns ns ns ns -0.84 -1.2 V 2 of 4 www.unisonic.com.tw QW-R210-011.a UT6354-H Preliminary Power MOSFET TEST CIRCUITS AND WAVEFORMS VDD=-30V VIN 0V -10V ID=-2A RL=15Ω VIN VOUT D PW=10µS D.C.≤1% G P.G 50Ω S Switching Time Test Circuit UNISONIC TECHNOLOGIES CO., LTD 3 of 4 www.unisonic.com.tw QW-R210-011.a UT6354-H Preliminary Power MOSFET UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD 4 of 4 www.unisonic.com.tw QW-R210-011.a