UNISONIC TECHNOLOGIES CO., LTD UTT60N10

UNISONIC TECHNOLOGIES CO., LTD
UTT60N10
60A, 100V N-CHANNEL
ENHANCEMENT MODE POWER
MOSFET TRANSISTOR

1
TO-220
DESCRIPTION
The UTC UTT60N10 is an N-channel enhancement power
MOSFET using UTC’s advanced technology to provide the
customers with perfect RDS(ON), high switching speed, high current
capacity and low gate charge.
The UTC UTT60N10 is suitable for motor control, AC-DC or
DC-DC converters and audio amplifiers, etc.

Power MOSFET
1
TO-220F1
1
FEATURES
TO - 252
* RDS(ON) < 24mΩ @ VGS=10V, ID=30A
* High Switching Speed
* High Current Capacity

SYMBOL

ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
UTT60N10L-TA3-T
UTT60N10G-TA3-T
UTT60N10L-TF1-T
UTT60N10G-TF1-T
UTT60N10L-TN3-R
UTT60N10G-TN3-R
Note: Pin Assignment: G: Gate
D: Drain
S: Source

Package
TO-220
TO-220F1
TO-252
1
G
G
G
Pin Assignment
2
3
D
S
D
S
D
S
Packing
Tube
Tube
Tape Reel
MARKING
www.unisonic.com.tw
Copyright © 2015 Unisonic Technologies Co., Ltd
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UTT60N10

Power MOSFE
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous
Pulsed
Single Pulsed
TO-220
TO-220F1
TO-252
Drain Current
Avalanche Energy
Power Dissipation
SYMBOL
VDSS
VGSS
ID
IDM
EAS
RATINGS
100
±25
60
100
270
100
PD
114
Junction Temperature
TJ
150
Storage Temperature
TSTG
-55 ~ 150
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.

THERMAL RESISTANCES CHARACTERISTICS
PARAMETER
Junction to Ambient
Junction to Case

UNIT
V
V
A
A
mJ
W
W
W
°C
°C
SYMBOL
TO-220/ TO-220F1
TO-252
TO-220
TO-220F1
TO-252
θJA
θJC
RATINGS
62.5
100
1.25
1.77
2.5
UNIT
°C/W
°C/W
ELECTRICAL CHARACTERISTICS
PARAMETER
SYMBOL
TEST CONDITIONS
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
ID=250µA, VGS=0V
Drain-Source Leakage Current
IDSS
VDS=100V, VGS=0V
Forward
VGS=+25V, VDS=0V
Gate- Source Leakage Current
IGSS
Reverse
VGS=-25V, VDS=0V
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS=VGS, ID=250µA
Static Drain-Source On-State Resistance
RDS(ON)
VGS=10V, ID=30A
DYNAMIC PARAMETERS
Input Capacitance
CISS
VGS=0V, VDS=25V, f=1.0MHz
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
SWITCHING PARAMETERS
Turn-ON Delay Time
tD(ON)
VDD=30V, ID=0.5A, RG=50Ω,
Rise Time
tR
VGS=10V
Turn-OFF Delay Time
tD(OFF)
Fall-Time
tF
Total Gate Charge
QG
VGS=10V, VDS=25V, ID=1.3A,
Gate to Source Charge
QGS
IG=100µA
Gate to Drain Charge
QGD
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous Current
IS
Maximum Body-Diode Pulsed Current
ISM
Drain-Source Diode Forward Voltage
VSD
IS=30A, VGS=0V
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
MIN
TYP MAX UNIT
100
1.0
15
1
+100
-100
V
µA
nA
nA
3.0
24
V
mΩ
1320 1900
330 680
132 200
pF
pF
pF
140
180
2180
396
213
17
33
ns
ns
ns
ns
nC
nC
nC
60
100
1.5
A
A
V
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UTT60N10
Power MOSFE
TEST CIRCUITS AND WAVEFORMS

VGS
Same Type
as DUT
12V
QG
10V
200nF
50kΩ
QGS
VDS
300nF
QGD
VGS
DUT
3mA
Charge
Gate Charge Test Circuit
Gate Charge Waveforms
Resistive Switching Test Circuit
Resistive Switching Waveforms
2
EAS= 1
2 LIAS
VDS
RG
BVDSS
BVDSS-VDD
BVDSS
ID
L
IAS
10V
ID(t)
DUT
tP
VDD
VDD
VDS(t)
tP
Unclamped Inductive Switching Test Circuit
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
Time
Unclamped Inductive Switching Waveforms
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
Power MOSFE
TEST CIRCUITS AND WAVEFORMS(Cont.)
+
DUT
VDS
RG
L
ISD
VGS
VDD
Driver
Same Type
as DUT
dv/dt controlled by RG
ISD controlled by pulse period
VGS
(Driver
)
D=
Gate Pulse Width
Gate Pulse Period
10V
IFM, Body Diode Forward Current
ISD
(DUT)
di/dt
IRM
Body Diode Reverse Current
VDS
(DUT)
Body Diode Recovery dv/dt
VSD
VDD
Body Diode Forward
Voltage Drop
Peak Diode Recovery dv/dt Test Circuit and Waveforms
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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Power MOSFE
TYPICAL CHARACTERISTICS

Drain Current vs. Gate Threshold Voltage
300
300
250
250
Drain Current, ID (µA)
Drain Current, ID (µA)
Drain Current vs. Drain-Source
Breakdown Voltage
200
150
100
50
0
200
150
100
50
0
25
50
75
100
0
0
125
30
Drain Current, ID (A)
Body-Diode Continuous Current, ID (A)
Drain-Source On-State Resistance
Characteristics
VGS=10V, ID=30A
25
20
15
10
5
0
0
100
200
300
400
500
Drain to Source Voltage, VDS (mV)
1.0
1.5
2.0
2.5
3.0
Gate Threshold Voltage, VTH (V)
Drain-Source Breakdown Voltage, BVDSS (V)
35
0.5
35
Body-Diode Continuous Current vs.
Source to Drain Voltage
30
25
20
15
10
5
0
0
0.2
0.4
0.6
0.8
1.0
Source to Drain Voltage, VSD (V)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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