UNISONIC TECHNOLOGIES CO., LTD UTT60N10 60A, 100V N-CHANNEL ENHANCEMENT MODE POWER MOSFET TRANSISTOR 1 TO-220 DESCRIPTION The UTC UTT60N10 is an N-channel enhancement power MOSFET using UTC’s advanced technology to provide the customers with perfect RDS(ON), high switching speed, high current capacity and low gate charge. The UTC UTT60N10 is suitable for motor control, AC-DC or DC-DC converters and audio amplifiers, etc. Power MOSFET 1 TO-220F1 1 FEATURES TO - 252 * RDS(ON) < 24mΩ @ VGS=10V, ID=30A * High Switching Speed * High Current Capacity SYMBOL ORDERING INFORMATION Ordering Number Lead Free Halogen Free UTT60N10L-TA3-T UTT60N10G-TA3-T UTT60N10L-TF1-T UTT60N10G-TF1-T UTT60N10L-TN3-R UTT60N10G-TN3-R Note: Pin Assignment: G: Gate D: Drain S: Source Package TO-220 TO-220F1 TO-252 1 G G G Pin Assignment 2 3 D S D S D S Packing Tube Tube Tape Reel MARKING www.unisonic.com.tw Copyright © 2015 Unisonic Technologies Co., Ltd 1 of 5 QW-R502-664.E UTT60N10 Power MOSFE ABSOLUTE MAXIMUM RATINGS PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Pulsed Single Pulsed TO-220 TO-220F1 TO-252 Drain Current Avalanche Energy Power Dissipation SYMBOL VDSS VGSS ID IDM EAS RATINGS 100 ±25 60 100 270 100 PD 114 Junction Temperature TJ 150 Storage Temperature TSTG -55 ~ 150 Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. THERMAL RESISTANCES CHARACTERISTICS PARAMETER Junction to Ambient Junction to Case UNIT V V A A mJ W W W °C °C SYMBOL TO-220/ TO-220F1 TO-252 TO-220 TO-220F1 TO-252 θJA θJC RATINGS 62.5 100 1.25 1.77 2.5 UNIT °C/W °C/W ELECTRICAL CHARACTERISTICS PARAMETER SYMBOL TEST CONDITIONS OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS ID=250µA, VGS=0V Drain-Source Leakage Current IDSS VDS=100V, VGS=0V Forward VGS=+25V, VDS=0V Gate- Source Leakage Current IGSS Reverse VGS=-25V, VDS=0V ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS=VGS, ID=250µA Static Drain-Source On-State Resistance RDS(ON) VGS=10V, ID=30A DYNAMIC PARAMETERS Input Capacitance CISS VGS=0V, VDS=25V, f=1.0MHz Output Capacitance COSS Reverse Transfer Capacitance CRSS SWITCHING PARAMETERS Turn-ON Delay Time tD(ON) VDD=30V, ID=0.5A, RG=50Ω, Rise Time tR VGS=10V Turn-OFF Delay Time tD(OFF) Fall-Time tF Total Gate Charge QG VGS=10V, VDS=25V, ID=1.3A, Gate to Source Charge QGS IG=100µA Gate to Drain Charge QGD SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Maximum Body-Diode Continuous Current IS Maximum Body-Diode Pulsed Current ISM Drain-Source Diode Forward Voltage VSD IS=30A, VGS=0V UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw MIN TYP MAX UNIT 100 1.0 15 1 +100 -100 V µA nA nA 3.0 24 V mΩ 1320 1900 330 680 132 200 pF pF pF 140 180 2180 396 213 17 33 ns ns ns ns nC nC nC 60 100 1.5 A A V 2 of 5 QW-R502-664.E UTT60N10 Power MOSFE TEST CIRCUITS AND WAVEFORMS VGS Same Type as DUT 12V QG 10V 200nF 50kΩ QGS VDS 300nF QGD VGS DUT 3mA Charge Gate Charge Test Circuit Gate Charge Waveforms Resistive Switching Test Circuit Resistive Switching Waveforms 2 EAS= 1 2 LIAS VDS RG BVDSS BVDSS-VDD BVDSS ID L IAS 10V ID(t) DUT tP VDD VDD VDS(t) tP Unclamped Inductive Switching Test Circuit UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw Time Unclamped Inductive Switching Waveforms 3 of 5 QW-R502-664.E UTT60N10 Power MOSFE TEST CIRCUITS AND WAVEFORMS(Cont.) + DUT VDS RG L ISD VGS VDD Driver Same Type as DUT dv/dt controlled by RG ISD controlled by pulse period VGS (Driver ) D= Gate Pulse Width Gate Pulse Period 10V IFM, Body Diode Forward Current ISD (DUT) di/dt IRM Body Diode Reverse Current VDS (DUT) Body Diode Recovery dv/dt VSD VDD Body Diode Forward Voltage Drop Peak Diode Recovery dv/dt Test Circuit and Waveforms UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 5 QW-R502-664.E UTT60N10 Power MOSFE TYPICAL CHARACTERISTICS Drain Current vs. Gate Threshold Voltage 300 300 250 250 Drain Current, ID (µA) Drain Current, ID (µA) Drain Current vs. Drain-Source Breakdown Voltage 200 150 100 50 0 200 150 100 50 0 25 50 75 100 0 0 125 30 Drain Current, ID (A) Body-Diode Continuous Current, ID (A) Drain-Source On-State Resistance Characteristics VGS=10V, ID=30A 25 20 15 10 5 0 0 100 200 300 400 500 Drain to Source Voltage, VDS (mV) 1.0 1.5 2.0 2.5 3.0 Gate Threshold Voltage, VTH (V) Drain-Source Breakdown Voltage, BVDSS (V) 35 0.5 35 Body-Diode Continuous Current vs. Source to Drain Voltage 30 25 20 15 10 5 0 0 0.2 0.4 0.6 0.8 1.0 Source to Drain Voltage, VSD (V) UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 5 of 5 QW-R502-664.E