UNISONIC TECHNOLOGIES CO., LTD 12N50

UNISONIC TECHNOLOGIES CO., LTD
12N50
Power MOSFET
12A, 500V N-CHANNEL
POWER MOSFET

DESCRIPTION
The UTC 12N50 is an N-channel mode power MOSFET using
UTC’s advanced technology to provide customers with planar
stripe and DMOS technology. This technology allows a minimum
on-state resistance and superior switching performance. It also can
withstand high energy pulse in the avalanche and commutation
mode.
The UTC 12N50 is generally applied in high efficiency switch
mode power supplies, active power factor correction and electronic
lamp ballasts based on half bridge topology.

FEATURES
* RDS(ON)<0.54Ω @ VGS=10V
* High Switching Speed
* 100% Avalanche Tested

SYMBOL

ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
12N50L-TA3-T
12N50G-TA3-T
12N50L-TF3-T
12N50G-TF3-T
12N50L-TF1-T
12N50G-TF1-T
12N50L-TF2-T
12N50G-TF2-T
12N50L-TQ2-T
12N50G-TQ2-T
12N50L-TQ2-R
12N50G-TQ2-R
Note: Pin Assignment: G: Gate D: Drain
S: Source
www.unisonic.com.tw
Copyright © 2013 Unisonic Technologies Co., Ltd
Package
TO-220
TO-220F
TO-220F1
TO-220F2
TO-263
TO-263
1
G
G
G
G
G
G
Pin Assignment
2
3
D
S
D
S
D
S
D
S
D
S
D
S
Packing
Tube
Tube
Tube
Tube
Tube
Tape Reel
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QW-R502-528.F
12N50

Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
500
V
Gate-Source Voltage
VGSS
±30
V
ID
12 (Note 2)
A
Continuous (TC=25°C)
Drain Current
Pulsed (Note 3)
IDM
48 (Note 2)
A
Avalanche Current (Note 3)
IAR
12
A
Single Pulsed (Note 4)
EAS
684
mJ
Avalanche Energy
Repetitive (Note 5)
EAR
19.5
mJ
Peak Diode Recovery dv/dt (Note 5)
dv/dt
4.5
V/ns
TO-220/ TO-263
195
Power Dissipation
W
TO-220F/TO-220F1
42
(TC=25°C)
TO-220F2
43
PD
TO-220/TO-263
1.53
Derate above 25°C
TO-220F/TO-220F1
0.33
W/°C
TO-220F2
0.34
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55~+150
°C
Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Drain current limited by maximum junction temperature
3. Repetitive Rating: Pulse width limited by maximum junction temperature
4. L =9.5mH, IAS = 12A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C
5. ISD ≤ 12A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C

THERMAL DATA
PARAMETER
Junction to Ambient
TO-220/ TO-263
Junction to Case
TO-220F/TO-220F1
TO-220F2
SYMBOL
θJA
θJC
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
RATINGS
62.5
0.65
3.0
2.9
UNIT
°C/W
°C/W
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12N50

Power MOSFET
ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
ID=250µA, VGS=0V
Drain-Source Leakage Current
IDSS
VDS=500V, VGS=0V
Forward
VGS=+30V, VDS=0V
Gate- Source Leakage Current
IGSS
Reverse
VGS=-30V, VDS=0V
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS=VGS, ID=250µA
Static Drain-Source On-State Resistance
RDS(ON)
VGS=10V, ID=6A
DYNAMIC PARAMETERS
Input Capacitance
CISS
VGS=0V, VDS=25V, f=1.0MHz
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
SWITCHING PARAMETERS
Total Gate Charge
QG
VGS=10V, VDS=400V, ID=12A
Gate to Source Charge
QGS
(Note 1, 2)
Gate to Drain Charge
QGD
Turn-ON Delay Time
tD(ON)
Rise Time
tR
VDD=250V, ID=12A, RG=25Ω
(Note 1, 2)
Turn-OFF Delay Time
tD(OFF)
Fall-Time
tF
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous Current
IS
Maximum Body-Diode Pulsed Current
ISM
Drain-Source Diode Forward Voltage
VSD
IS=12A, VGS=0V
Body Diode Reverse Recovery Time
trr
IS=12A, VGS=0V, dIF/dt=100A/µs
(Note 1)
Body Diode Reverse Recovery Charge
QRR
Note: 1. Pulse Test: Pulse width ≤ 300µs, Duty cycle ≤ 2%
2. Essentially independent of operating temperature
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
MIN TYP MAX UNIT
500
2.0
V
10
µA
+100 nA
-100 nA
4.0
0.42 0.54
V
Ω
1450 1930
198 265
14.5 22
pF
pF
pF
30
8
12
28
54
75
47
39
65
120
160
105
12
48
1.5
154
0.45
nC
nC
nC
ns
ns
ns
ns
A
A
V
ns
µC
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
Power MOSFET
TEST CIRCUITS AND WAVEFORMS
Gate Charge Test Circuit
Gate Charge Waveforms
VGS
Same Type
as DUT
12V
QG
10V
200nF
50kΩ
VDS
300nF
QGS
QGD
VGS
DUT
3mA
Charge
Unclamped Inductive Switching Waveforms
Unclamped Inductive Switching Test Circuit
2
EAS= 1
2 LIAS
VDS
RG
BVDSS
BVDSS-VDD
BVDSS
ID
L
IAS
10V
ID(t)
DUT
tP
VDD
VDD
VDS(t)
tP
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
Time
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12N50

Power MOSFET
TEST CIRCUITS AND WAVEFORMS(Cont.)
Peak Diode Recovery dv/dt Test Circuit & Waveforms
+
DUT
VDS
RG
L
ISD
VGS
VDD
Driver
Same Type
as DUT
dv/dt controlled by RG
ISD controlled by pulse period
VGS
(Driver)
D=
Gate Pulse Width
Gate Pulse Period
10V
IFM, Body Diode Forward Current
ISD
(DUT)
di/dt
IRM
Body Diode Reverse Current
VDS
(DUT)
Body Diode Recovery dv/dt
VSD
VDD
Body Diode Forward
Voltage Drop
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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TYPICAL CHARACTERISTICS
Drain Current, ID (µA)
300
Drain Current vs. Drain-Source
Breakdown Voltage
Drain Current vs. Gate Threshold Voltage
300
250
250
Drain Current, ID (µA)

Power MOSFET
200
150
100
200
150
100
50
50
0
0
0
0.6
1.2 1.8
2.4
3.0 3.6
Gate Threshold Voltage, VTH (V)
Drain Current, ID (A)
Drain Current, ID (A)
0
120
240
360
480 600
Drain-Source Breakdown Voltage, BVDSS (V)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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